DE69816955T2 - Verfahren zum Spalten - Google Patents
Verfahren zum Spalten Download PDFInfo
- Publication number
- DE69816955T2 DE69816955T2 DE1998616955 DE69816955T DE69816955T2 DE 69816955 T2 DE69816955 T2 DE 69816955T2 DE 1998616955 DE1998616955 DE 1998616955 DE 69816955 T DE69816955 T DE 69816955T DE 69816955 T2 DE69816955 T2 DE 69816955T2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- substrate
- bonded substrate
- splitting
- jet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 116
- 239000000758 substrate Substances 0.000 claims abstract description 521
- 230000008569 process Effects 0.000 claims description 54
- 239000007788 liquid Substances 0.000 claims description 28
- 230000002093 peripheral effect Effects 0.000 claims description 25
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 10
- 230000008859 change Effects 0.000 claims description 8
- 230000007423 decrease Effects 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 17
- 238000012545 processing Methods 0.000 abstract description 2
- 238000000926 separation method Methods 0.000 abstract 1
- 229910021426 porous silicon Inorganic materials 0.000 description 38
- 238000005422 blasting Methods 0.000 description 24
- 238000003776 cleavage reaction Methods 0.000 description 20
- 239000010408 film Substances 0.000 description 20
- 230000007017 scission Effects 0.000 description 20
- 229910004298 SiO 2 Inorganic materials 0.000 description 19
- 230000007246 mechanism Effects 0.000 description 19
- 229910021419 crystalline silicon Inorganic materials 0.000 description 16
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 16
- 238000005516 engineering process Methods 0.000 description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 238000007743 anodising Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 229960002050 hydrofluoric acid Drugs 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 238000011068 loading method Methods 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- 230000006835 compression Effects 0.000 description 4
- 238000007906 compression Methods 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 235000014820 Galium aparine Nutrition 0.000 description 2
- 240000005702 Galium aparine Species 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000002048 anodisation reaction Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000004992 fission Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- -1 oxygen ions Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000002250 progressing effect Effects 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229920002449 FKM Polymers 0.000 description 1
- 241001295925 Gegenes Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 210000003746 feather Anatomy 0.000 description 1
- 210000004907 gland Anatomy 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26F—PERFORATING; PUNCHING; CUTTING-OUT; STAMPING-OUT; SEVERING BY MEANS OTHER THAN CUTTING
- B26F3/00—Severing by means other than cutting; Apparatus therefor
- B26F3/004—Severing by means other than cutting; Apparatus therefor by means of a fluid jet
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30105—Capacitance
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/934—Apparatus having delaminating means adapted for delaminating a specified article
- Y10S156/941—Means for delaminating semiconductive product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1126—Using direct fluid current against work during delaminating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/12—Surface bonding means and/or assembly means with cutting, punching, piercing, severing or tearing
- Y10T156/1374—Surface bonding means and/or assembly means with cutting, punching, piercing, severing or tearing with means projecting fluid against work
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49815—Disassembling
- Y10T29/49821—Disassembling by altering or destroying work part or connector
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T83/00—Cutting
- Y10T83/364—By fluid blast and/or suction
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Forests & Forestry (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Weting (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Inorganic Insulating Materials (AREA)
- Materials For Photolithography (AREA)
- Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP36101497 | 1997-12-26 | ||
| JP36101497A JP4323577B2 (ja) | 1997-12-26 | 1997-12-26 | 分離方法および半導体基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69816955D1 DE69816955D1 (de) | 2003-09-11 |
| DE69816955T2 true DE69816955T2 (de) | 2004-06-17 |
Family
ID=18471832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1998616955 Expired - Lifetime DE69816955T2 (de) | 1997-12-26 | 1998-12-18 | Verfahren zum Spalten |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6436226B1 (enExample) |
| EP (1) | EP0925887B1 (enExample) |
| JP (1) | JP4323577B2 (enExample) |
| KR (1) | KR19990063514A (enExample) |
| CN (1) | CN1153264C (enExample) |
| AT (1) | ATE246577T1 (enExample) |
| AU (1) | AU736845B2 (enExample) |
| DE (1) | DE69816955T2 (enExample) |
| SG (1) | SG76581A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102014118017A1 (de) * | 2014-12-05 | 2016-06-09 | Ev Group E. Thallner Gmbh | Substratstapelhalterung, Container und Verfahren zur Trennung eines Substratstapels |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6382292B1 (en) * | 1997-03-27 | 2002-05-07 | Canon Kabushiki Kaisha | Method and apparatus for separating composite member using fluid |
| TW508690B (en) | 1999-12-08 | 2002-11-01 | Canon Kk | Composite member separating method, thin film manufacturing method, and composite member separating apparatus |
| JP2002075915A (ja) * | 2000-08-25 | 2002-03-15 | Canon Inc | 試料の分離装置及び分離方法 |
| JP2002075917A (ja) * | 2000-08-25 | 2002-03-15 | Canon Inc | 試料の分離装置及び分離方法 |
| KR100383265B1 (ko) * | 2001-01-17 | 2003-05-09 | 삼성전자주식회사 | 웨이퍼 보호 테이프 제거용 반도체 제조장치 |
| FR2823373B1 (fr) * | 2001-04-10 | 2005-02-04 | Soitec Silicon On Insulator | Dispositif de coupe de couche d'un substrat, et procede associe |
| JP2002340989A (ja) * | 2001-05-15 | 2002-11-27 | Semiconductor Energy Lab Co Ltd | 測定方法、検査方法及び検査装置 |
| JP2002353423A (ja) * | 2001-05-25 | 2002-12-06 | Canon Inc | 板部材の分離装置及び処理方法 |
| JP2003017667A (ja) * | 2001-06-29 | 2003-01-17 | Canon Inc | 部材の分離方法及び分離装置 |
| JP2003017668A (ja) * | 2001-06-29 | 2003-01-17 | Canon Inc | 部材の分離方法及び分離装置 |
| US7187162B2 (en) * | 2002-12-16 | 2007-03-06 | S.O.I.Tec Silicon On Insulator Technologies S.A. | Tools and methods for disuniting semiconductor wafers |
| US20050150597A1 (en) * | 2004-01-09 | 2005-07-14 | Silicon Genesis Corporation | Apparatus and method for controlled cleaving |
| DE102010010334B4 (de) * | 2010-03-04 | 2012-01-19 | Satisloh Ag | Vorrichtung zum Abblocken von optischen Werkstücken, insbesondere Brillengläsern |
| US9765289B2 (en) * | 2012-04-18 | 2017-09-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cleaning methods and compositions |
| JP6145415B2 (ja) * | 2014-02-27 | 2017-06-14 | 東京エレクトロン株式会社 | 剥離方法、プログラム、コンピュータ記憶媒体、剥離装置及び剥離システム |
| KR102305505B1 (ko) * | 2014-09-29 | 2021-09-24 | 삼성전자주식회사 | 웨이퍼 서포팅 시스템 디본딩 이니시에이터 및 웨이퍼 서포팅 시스템 디본딩 방법 |
| CN105931997B (zh) * | 2015-02-27 | 2019-02-05 | 胡迪群 | 暂时性复合式载板 |
| CN109148333A (zh) * | 2018-08-03 | 2019-01-04 | 武汉新芯集成电路制造有限公司 | 一种晶圆分离装置及方法 |
| KR102204732B1 (ko) * | 2019-11-11 | 2021-01-19 | (주)더숨 | Soi 기판 제조 방법 |
| WO2024039868A1 (en) * | 2022-08-19 | 2024-02-22 | Lumileds Llc | Open-ended holder device for removing sapphire substrate |
| WO2024204570A1 (ja) * | 2023-03-31 | 2024-10-03 | 芝浦メカトロニクス株式会社 | 基板分離装置、基板処理装置および基板分離方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4507898A (en) * | 1981-04-13 | 1985-04-02 | International Harvester Company | Abrasive liquid jet cutting apparatus |
| US4702042A (en) * | 1984-09-27 | 1987-10-27 | Libbey-Owens-Ford Co. | Cutting strengthened glass |
| US4703591A (en) * | 1985-04-15 | 1987-11-03 | Libbey-Owens-Ford Co. | Ultra-high pressure abrasive jet cutting of glass |
| US4962879A (en) | 1988-12-19 | 1990-10-16 | Duke University | Method for bubble-free bonding of silicon wafers |
| KR950014609B1 (ko) | 1990-08-03 | 1995-12-11 | 캐논 가부시끼가이샤 | 반도체부재 및 반도체부재의 제조방법 |
| FR2681472B1 (fr) | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
| US5212451A (en) | 1992-03-09 | 1993-05-18 | Xerox Corporation | Single balanced beam electrostatic voltmeter modulator |
| FR2699852B1 (fr) * | 1992-12-29 | 1995-03-17 | Gaz De France | Procédé et dispositif d'usinage à jet de fluide haute pression asservi. |
| US5339715A (en) * | 1993-09-02 | 1994-08-23 | Davidson Textron Inc. | Programmable pressure control system |
| JP3257580B2 (ja) | 1994-03-10 | 2002-02-18 | キヤノン株式会社 | 半導体基板の作製方法 |
| FR2725074B1 (fr) | 1994-09-22 | 1996-12-20 | Commissariat Energie Atomique | Procede de fabrication d'une structure comportant une couche mince semi-conductrice sur un substrat |
| KR0165467B1 (ko) * | 1995-10-31 | 1999-02-01 | 김광호 | 웨이퍼 디본더 및 이를 이용한 웨이퍼 디본딩법 |
| US6048411A (en) * | 1997-05-12 | 2000-04-11 | Silicon Genesis Corporation | Silicon-on-silicon hybrid wafer assembly |
-
1997
- 1997-12-26 JP JP36101497A patent/JP4323577B2/ja not_active Expired - Fee Related
-
1998
- 1998-12-15 SG SG1998005834A patent/SG76581A1/en unknown
- 1998-12-15 US US09/211,876 patent/US6436226B1/en not_active Expired - Lifetime
- 1998-12-18 DE DE1998616955 patent/DE69816955T2/de not_active Expired - Lifetime
- 1998-12-18 EP EP19980310411 patent/EP0925887B1/en not_active Expired - Lifetime
- 1998-12-18 AT AT98310411T patent/ATE246577T1/de not_active IP Right Cessation
- 1998-12-24 AU AU98187/98A patent/AU736845B2/en not_active Ceased
- 1998-12-25 CN CNB981263356A patent/CN1153264C/zh not_active Expired - Fee Related
- 1998-12-26 KR KR1019980058986A patent/KR19990063514A/ko not_active Ceased
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102014118017A1 (de) * | 2014-12-05 | 2016-06-09 | Ev Group E. Thallner Gmbh | Substratstapelhalterung, Container und Verfahren zur Trennung eines Substratstapels |
| US10049902B2 (en) | 2014-12-05 | 2018-08-14 | Ev Group E. Thallner Gmbh | Substrate stack holder, container and method for parting a substrate stack |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0925887A1 (en) | 1999-06-30 |
| AU736845B2 (en) | 2001-08-02 |
| CN1221973A (zh) | 1999-07-07 |
| ATE246577T1 (de) | 2003-08-15 |
| KR19990063514A (ko) | 1999-07-26 |
| JPH11195569A (ja) | 1999-07-21 |
| JP4323577B2 (ja) | 2009-09-02 |
| DE69816955D1 (de) | 2003-09-11 |
| EP0925887B1 (en) | 2003-08-06 |
| CN1153264C (zh) | 2004-06-09 |
| AU9818798A (en) | 1999-07-15 |
| US6436226B1 (en) | 2002-08-20 |
| SG76581A1 (en) | 2000-11-21 |
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