JP4323577B2 - 分離方法および半導体基板の製造方法 - Google Patents

分離方法および半導体基板の製造方法 Download PDF

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Publication number
JP4323577B2
JP4323577B2 JP36101497A JP36101497A JP4323577B2 JP 4323577 B2 JP4323577 B2 JP 4323577B2 JP 36101497 A JP36101497 A JP 36101497A JP 36101497 A JP36101497 A JP 36101497A JP 4323577 B2 JP4323577 B2 JP 4323577B2
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JP
Japan
Prior art keywords
substrate
bonded substrate
separation
layer
bonded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP36101497A
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English (en)
Japanese (ja)
Other versions
JPH11195569A5 (enExample
JPH11195569A (ja
Inventor
和明 近江
清文 坂口
一隆 柳田
隆夫 米原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP36101497A priority Critical patent/JP4323577B2/ja
Priority to SG1998005834A priority patent/SG76581A1/en
Priority to US09/211,876 priority patent/US6436226B1/en
Priority to DE1998616955 priority patent/DE69816955T2/de
Priority to EP19980310411 priority patent/EP0925887B1/en
Priority to AT98310411T priority patent/ATE246577T1/de
Priority to AU98187/98A priority patent/AU736845B2/en
Priority to CNB981263356A priority patent/CN1153264C/zh
Priority to KR1019980058986A priority patent/KR19990063514A/ko
Publication of JPH11195569A publication Critical patent/JPH11195569A/ja
Publication of JPH11195569A5 publication Critical patent/JPH11195569A5/ja
Application granted granted Critical
Publication of JP4323577B2 publication Critical patent/JP4323577B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26F—PERFORATING; PUNCHING; CUTTING-OUT; STAMPING-OUT; SEVERING BY MEANS OTHER THAN CUTTING
    • B26F3/00—Severing by means other than cutting; Apparatus therefor
    • B26F3/004—Severing by means other than cutting; Apparatus therefor by means of a fluid jet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/934—Apparatus having delaminating means adapted for delaminating a specified article
    • Y10S156/941—Means for delaminating semiconductive product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1126—Using direct fluid current against work during delaminating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/12—Surface bonding means and/or assembly means with cutting, punching, piercing, severing or tearing
    • Y10T156/1374—Surface bonding means and/or assembly means with cutting, punching, piercing, severing or tearing with means projecting fluid against work
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19—Delaminating means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49815—Disassembling
    • Y10T29/49821—Disassembling by altering or destroying work part or connector
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T83/00—Cutting
    • Y10T83/364—By fluid blast and/or suction

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Forests & Forestry (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Weting (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Inorganic Insulating Materials (AREA)
  • Materials For Photolithography (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
JP36101497A 1997-12-26 1997-12-26 分離方法および半導体基板の製造方法 Expired - Fee Related JP4323577B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP36101497A JP4323577B2 (ja) 1997-12-26 1997-12-26 分離方法および半導体基板の製造方法
SG1998005834A SG76581A1 (en) 1997-12-26 1998-12-15 Object separating apparatus and method and method of manufacturing semiconductor substrate
US09/211,876 US6436226B1 (en) 1997-12-26 1998-12-15 Object separating apparatus and method, and method of manufacturing semiconductor substrate
EP19980310411 EP0925887B1 (en) 1997-12-26 1998-12-18 Object separating method, and method of manufacturing semiconductor substrate
AT98310411T ATE246577T1 (de) 1997-12-26 1998-12-18 Verfahren zum spalten
DE1998616955 DE69816955T2 (de) 1997-12-26 1998-12-18 Verfahren zum Spalten
AU98187/98A AU736845B2 (en) 1997-12-26 1998-12-24 Object separating apparatus and method, and method of manufacturing semiconductor substrate
CNB981263356A CN1153264C (zh) 1997-12-26 1998-12-25 物体分离装置和方法以及半导体衬底制造方法
KR1019980058986A KR19990063514A (ko) 1997-12-26 1998-12-26 물체의 분리장치 및 그 방법과 반도체기체의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP36101497A JP4323577B2 (ja) 1997-12-26 1997-12-26 分離方法および半導体基板の製造方法

Publications (3)

Publication Number Publication Date
JPH11195569A JPH11195569A (ja) 1999-07-21
JPH11195569A5 JPH11195569A5 (enExample) 2007-03-29
JP4323577B2 true JP4323577B2 (ja) 2009-09-02

Family

ID=18471832

Family Applications (1)

Application Number Title Priority Date Filing Date
JP36101497A Expired - Fee Related JP4323577B2 (ja) 1997-12-26 1997-12-26 分離方法および半導体基板の製造方法

Country Status (9)

Country Link
US (1) US6436226B1 (enExample)
EP (1) EP0925887B1 (enExample)
JP (1) JP4323577B2 (enExample)
KR (1) KR19990063514A (enExample)
CN (1) CN1153264C (enExample)
AT (1) ATE246577T1 (enExample)
AU (1) AU736845B2 (enExample)
DE (1) DE69816955T2 (enExample)
SG (1) SG76581A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102204732B1 (ko) * 2019-11-11 2021-01-19 (주)더숨 Soi 기판 제조 방법

Families Citing this family (21)

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US6382292B1 (en) * 1997-03-27 2002-05-07 Canon Kabushiki Kaisha Method and apparatus for separating composite member using fluid
TW508690B (en) 1999-12-08 2002-11-01 Canon Kk Composite member separating method, thin film manufacturing method, and composite member separating apparatus
JP2002075915A (ja) * 2000-08-25 2002-03-15 Canon Inc 試料の分離装置及び分離方法
JP2002075917A (ja) * 2000-08-25 2002-03-15 Canon Inc 試料の分離装置及び分離方法
KR100383265B1 (ko) * 2001-01-17 2003-05-09 삼성전자주식회사 웨이퍼 보호 테이프 제거용 반도체 제조장치
FR2823373B1 (fr) * 2001-04-10 2005-02-04 Soitec Silicon On Insulator Dispositif de coupe de couche d'un substrat, et procede associe
JP2002340989A (ja) * 2001-05-15 2002-11-27 Semiconductor Energy Lab Co Ltd 測定方法、検査方法及び検査装置
JP2002353423A (ja) * 2001-05-25 2002-12-06 Canon Inc 板部材の分離装置及び処理方法
JP2003017667A (ja) * 2001-06-29 2003-01-17 Canon Inc 部材の分離方法及び分離装置
JP2003017668A (ja) * 2001-06-29 2003-01-17 Canon Inc 部材の分離方法及び分離装置
US7187162B2 (en) * 2002-12-16 2007-03-06 S.O.I.Tec Silicon On Insulator Technologies S.A. Tools and methods for disuniting semiconductor wafers
US20050150597A1 (en) * 2004-01-09 2005-07-14 Silicon Genesis Corporation Apparatus and method for controlled cleaving
DE102010010334B4 (de) * 2010-03-04 2012-01-19 Satisloh Ag Vorrichtung zum Abblocken von optischen Werkstücken, insbesondere Brillengläsern
US9765289B2 (en) * 2012-04-18 2017-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Cleaning methods and compositions
JP6145415B2 (ja) * 2014-02-27 2017-06-14 東京エレクトロン株式会社 剥離方法、プログラム、コンピュータ記憶媒体、剥離装置及び剥離システム
KR102305505B1 (ko) * 2014-09-29 2021-09-24 삼성전자주식회사 웨이퍼 서포팅 시스템 디본딩 이니시에이터 및 웨이퍼 서포팅 시스템 디본딩 방법
DE102014118017A1 (de) * 2014-12-05 2016-06-09 Ev Group E. Thallner Gmbh Substratstapelhalterung, Container und Verfahren zur Trennung eines Substratstapels
CN105931997B (zh) * 2015-02-27 2019-02-05 胡迪群 暂时性复合式载板
CN109148333A (zh) * 2018-08-03 2019-01-04 武汉新芯集成电路制造有限公司 一种晶圆分离装置及方法
WO2024039868A1 (en) * 2022-08-19 2024-02-22 Lumileds Llc Open-ended holder device for removing sapphire substrate
WO2024204570A1 (ja) * 2023-03-31 2024-10-03 芝浦メカトロニクス株式会社 基板分離装置、基板処理装置および基板分離方法

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Publication number Priority date Publication date Assignee Title
KR102204732B1 (ko) * 2019-11-11 2021-01-19 (주)더숨 Soi 기판 제조 방법

Also Published As

Publication number Publication date
EP0925887A1 (en) 1999-06-30
AU736845B2 (en) 2001-08-02
CN1221973A (zh) 1999-07-07
ATE246577T1 (de) 2003-08-15
KR19990063514A (ko) 1999-07-26
JPH11195569A (ja) 1999-07-21
DE69816955D1 (de) 2003-09-11
EP0925887B1 (en) 2003-08-06
DE69816955T2 (de) 2004-06-17
CN1153264C (zh) 2004-06-09
AU9818798A (en) 1999-07-15
US6436226B1 (en) 2002-08-20
SG76581A1 (en) 2000-11-21

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