JPH11195569A5 - - Google Patents

Info

Publication number
JPH11195569A5
JPH11195569A5 JP1997361014A JP36101497A JPH11195569A5 JP H11195569 A5 JPH11195569 A5 JP H11195569A5 JP 1997361014 A JP1997361014 A JP 1997361014A JP 36101497 A JP36101497 A JP 36101497A JP H11195569 A5 JPH11195569 A5 JP H11195569A5
Authority
JP
Japan
Prior art keywords
separating
separation
fluid
separated
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997361014A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11195569A (ja
JP4323577B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP36101497A external-priority patent/JP4323577B2/ja
Priority to JP36101497A priority Critical patent/JP4323577B2/ja
Priority to SG1998005834A priority patent/SG76581A1/en
Priority to US09/211,876 priority patent/US6436226B1/en
Priority to EP19980310411 priority patent/EP0925887B1/en
Priority to AT98310411T priority patent/ATE246577T1/de
Priority to DE1998616955 priority patent/DE69816955T2/de
Priority to AU98187/98A priority patent/AU736845B2/en
Priority to CNB981263356A priority patent/CN1153264C/zh
Priority to KR1019980058986A priority patent/KR19990063514A/ko
Publication of JPH11195569A publication Critical patent/JPH11195569A/ja
Publication of JPH11195569A5 publication Critical patent/JPH11195569A5/ja
Publication of JP4323577B2 publication Critical patent/JP4323577B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP36101497A 1997-12-26 1997-12-26 分離方法および半導体基板の製造方法 Expired - Fee Related JP4323577B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP36101497A JP4323577B2 (ja) 1997-12-26 1997-12-26 分離方法および半導体基板の製造方法
SG1998005834A SG76581A1 (en) 1997-12-26 1998-12-15 Object separating apparatus and method and method of manufacturing semiconductor substrate
US09/211,876 US6436226B1 (en) 1997-12-26 1998-12-15 Object separating apparatus and method, and method of manufacturing semiconductor substrate
EP19980310411 EP0925887B1 (en) 1997-12-26 1998-12-18 Object separating method, and method of manufacturing semiconductor substrate
AT98310411T ATE246577T1 (de) 1997-12-26 1998-12-18 Verfahren zum spalten
DE1998616955 DE69816955T2 (de) 1997-12-26 1998-12-18 Verfahren zum Spalten
AU98187/98A AU736845B2 (en) 1997-12-26 1998-12-24 Object separating apparatus and method, and method of manufacturing semiconductor substrate
CNB981263356A CN1153264C (zh) 1997-12-26 1998-12-25 物体分离装置和方法以及半导体衬底制造方法
KR1019980058986A KR19990063514A (ko) 1997-12-26 1998-12-26 물체의 분리장치 및 그 방법과 반도체기체의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP36101497A JP4323577B2 (ja) 1997-12-26 1997-12-26 分離方法および半導体基板の製造方法

Publications (3)

Publication Number Publication Date
JPH11195569A JPH11195569A (ja) 1999-07-21
JPH11195569A5 true JPH11195569A5 (enExample) 2007-03-29
JP4323577B2 JP4323577B2 (ja) 2009-09-02

Family

ID=18471832

Family Applications (1)

Application Number Title Priority Date Filing Date
JP36101497A Expired - Fee Related JP4323577B2 (ja) 1997-12-26 1997-12-26 分離方法および半導体基板の製造方法

Country Status (9)

Country Link
US (1) US6436226B1 (enExample)
EP (1) EP0925887B1 (enExample)
JP (1) JP4323577B2 (enExample)
KR (1) KR19990063514A (enExample)
CN (1) CN1153264C (enExample)
AT (1) ATE246577T1 (enExample)
AU (1) AU736845B2 (enExample)
DE (1) DE69816955T2 (enExample)
SG (1) SG76581A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6382292B1 (en) * 1997-03-27 2002-05-07 Canon Kabushiki Kaisha Method and apparatus for separating composite member using fluid
TW508690B (en) 1999-12-08 2002-11-01 Canon Kk Composite member separating method, thin film manufacturing method, and composite member separating apparatus
JP2002075915A (ja) * 2000-08-25 2002-03-15 Canon Inc 試料の分離装置及び分離方法
JP2002075917A (ja) * 2000-08-25 2002-03-15 Canon Inc 試料の分離装置及び分離方法
KR100383265B1 (ko) * 2001-01-17 2003-05-09 삼성전자주식회사 웨이퍼 보호 테이프 제거용 반도체 제조장치
FR2823373B1 (fr) * 2001-04-10 2005-02-04 Soitec Silicon On Insulator Dispositif de coupe de couche d'un substrat, et procede associe
JP2002340989A (ja) * 2001-05-15 2002-11-27 Semiconductor Energy Lab Co Ltd 測定方法、検査方法及び検査装置
JP2002353423A (ja) * 2001-05-25 2002-12-06 Canon Inc 板部材の分離装置及び処理方法
JP2003017667A (ja) * 2001-06-29 2003-01-17 Canon Inc 部材の分離方法及び分離装置
JP2003017668A (ja) * 2001-06-29 2003-01-17 Canon Inc 部材の分離方法及び分離装置
US7187162B2 (en) * 2002-12-16 2007-03-06 S.O.I.Tec Silicon On Insulator Technologies S.A. Tools and methods for disuniting semiconductor wafers
US20050150597A1 (en) * 2004-01-09 2005-07-14 Silicon Genesis Corporation Apparatus and method for controlled cleaving
DE102010010334B4 (de) * 2010-03-04 2012-01-19 Satisloh Ag Vorrichtung zum Abblocken von optischen Werkstücken, insbesondere Brillengläsern
US9765289B2 (en) * 2012-04-18 2017-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Cleaning methods and compositions
JP6145415B2 (ja) * 2014-02-27 2017-06-14 東京エレクトロン株式会社 剥離方法、プログラム、コンピュータ記憶媒体、剥離装置及び剥離システム
KR102305505B1 (ko) * 2014-09-29 2021-09-24 삼성전자주식회사 웨이퍼 서포팅 시스템 디본딩 이니시에이터 및 웨이퍼 서포팅 시스템 디본딩 방법
DE102014118017A1 (de) * 2014-12-05 2016-06-09 Ev Group E. Thallner Gmbh Substratstapelhalterung, Container und Verfahren zur Trennung eines Substratstapels
CN105931997B (zh) * 2015-02-27 2019-02-05 胡迪群 暂时性复合式载板
CN109148333A (zh) * 2018-08-03 2019-01-04 武汉新芯集成电路制造有限公司 一种晶圆分离装置及方法
KR102204732B1 (ko) * 2019-11-11 2021-01-19 (주)더숨 Soi 기판 제조 방법
WO2024039868A1 (en) * 2022-08-19 2024-02-22 Lumileds Llc Open-ended holder device for removing sapphire substrate
WO2024204570A1 (ja) * 2023-03-31 2024-10-03 芝浦メカトロニクス株式会社 基板分離装置、基板処理装置および基板分離方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4507898A (en) * 1981-04-13 1985-04-02 International Harvester Company Abrasive liquid jet cutting apparatus
US4702042A (en) * 1984-09-27 1987-10-27 Libbey-Owens-Ford Co. Cutting strengthened glass
US4703591A (en) * 1985-04-15 1987-11-03 Libbey-Owens-Ford Co. Ultra-high pressure abrasive jet cutting of glass
US4962879A (en) 1988-12-19 1990-10-16 Duke University Method for bubble-free bonding of silicon wafers
KR950014609B1 (ko) 1990-08-03 1995-12-11 캐논 가부시끼가이샤 반도체부재 및 반도체부재의 제조방법
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
US5212451A (en) 1992-03-09 1993-05-18 Xerox Corporation Single balanced beam electrostatic voltmeter modulator
FR2699852B1 (fr) * 1992-12-29 1995-03-17 Gaz De France Procédé et dispositif d'usinage à jet de fluide haute pression asservi.
US5339715A (en) * 1993-09-02 1994-08-23 Davidson Textron Inc. Programmable pressure control system
JP3257580B2 (ja) 1994-03-10 2002-02-18 キヤノン株式会社 半導体基板の作製方法
FR2725074B1 (fr) 1994-09-22 1996-12-20 Commissariat Energie Atomique Procede de fabrication d'une structure comportant une couche mince semi-conductrice sur un substrat
KR0165467B1 (ko) * 1995-10-31 1999-02-01 김광호 웨이퍼 디본더 및 이를 이용한 웨이퍼 디본딩법
US6048411A (en) * 1997-05-12 2000-04-11 Silicon Genesis Corporation Silicon-on-silicon hybrid wafer assembly

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