DE69801177T2 - GaAs FET Schalter mit erhöhter Schaltgeschwindigkeit durch Beleuchtung mit Licht hoher Intensität - Google Patents
GaAs FET Schalter mit erhöhter Schaltgeschwindigkeit durch Beleuchtung mit Licht hoher IntensitätInfo
- Publication number
- DE69801177T2 DE69801177T2 DE69801177T DE69801177T DE69801177T2 DE 69801177 T2 DE69801177 T2 DE 69801177T2 DE 69801177 T DE69801177 T DE 69801177T DE 69801177 T DE69801177 T DE 69801177T DE 69801177 T2 DE69801177 T2 DE 69801177T2
- Authority
- DE
- Germany
- Prior art keywords
- gaas
- switches
- step attenuator
- leds
- light sources
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims description 91
- 230000000694 effects Effects 0.000 claims description 33
- 230000007704 transition Effects 0.000 claims description 8
- 238000005538 encapsulation Methods 0.000 claims description 6
- 238000005286 illumination Methods 0.000 claims description 5
- 238000013016 damping Methods 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 claims 1
- 238000006731 degradation reaction Methods 0.000 claims 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 80
- 230000008901 benefit Effects 0.000 description 6
- 230000001678 irradiating effect Effects 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
- H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
Landscapes
- Led Devices (AREA)
- Non-Reversible Transmitting Devices (AREA)
- Attenuators (AREA)
- Networks Using Active Elements (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/829,924 US5808322A (en) | 1997-04-01 | 1997-04-01 | Faster switching GaAs FET switches by illumination with high intensity light |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69801177D1 DE69801177D1 (de) | 2001-08-30 |
| DE69801177T2 true DE69801177T2 (de) | 2002-03-21 |
Family
ID=25255917
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69801177T Expired - Fee Related DE69801177T2 (de) | 1997-04-01 | 1998-01-29 | GaAs FET Schalter mit erhöhter Schaltgeschwindigkeit durch Beleuchtung mit Licht hoher Intensität |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5808322A (enExample) |
| EP (1) | EP0869611B1 (enExample) |
| JP (1) | JPH118525A (enExample) |
| DE (1) | DE69801177T2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004024367A1 (de) * | 2004-05-17 | 2005-12-22 | Rohde & Schwarz Gmbh & Co. Kg | Kalibrierbare Mikrowellen-Schaltung mit beleuchtbaren GaAs-FET sowie Kalibriervorrichtung und Verfahren zur Kalibrierung |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10228810B4 (de) * | 2002-06-27 | 2010-09-30 | Rohde & Schwarz Gmbh & Co. Kg | Mikrowellen-Schaltung mit beleuchteten Feldeffekt-Transistoren |
| US7847301B2 (en) * | 2004-12-08 | 2010-12-07 | Agilent Technologies, Inc. | Electronic microcircuit having internal light enhancement |
| US8022519B2 (en) | 2005-05-19 | 2011-09-20 | Sandisk Technologies Inc. | System-in-a-package based flash memory card |
| US20070126525A1 (en) * | 2005-12-01 | 2007-06-07 | Nicholson Dean B | Dual path attenuation system |
| JP4935373B2 (ja) * | 2007-01-23 | 2012-05-23 | 横河電機株式会社 | スイッチ回路およびこのスイッチ回路を用いたステップアッテネータ |
| WO2016198100A1 (en) | 2015-06-10 | 2016-12-15 | Advantest Corporation | High frequency integrated circuit and emitting device for irradiating the integrated circuit |
| US9590591B1 (en) * | 2016-03-17 | 2017-03-07 | Analog Devices Global | High frequency signal attenuators |
| US10326018B1 (en) | 2018-02-28 | 2019-06-18 | Nxp Usa, Inc. | RF switches, integrated circuits, and devices with multi-gate field effect transistors and voltage leveling circuits, and methods of their fabrication |
| US10784862B1 (en) | 2019-09-10 | 2020-09-22 | Nxp Usa, Inc. | High speed switching radio frequency switches |
| US10972091B1 (en) | 2019-12-03 | 2021-04-06 | Nxp Usa, Inc. | Radio frequency switches with voltage equalization |
| US11368180B2 (en) | 2020-07-31 | 2022-06-21 | Nxp Usa, Inc. | Switch circuits with parallel transistor stacks and methods of their operation |
| US11683028B2 (en) | 2021-03-03 | 2023-06-20 | Nxp Usa, Inc. | Radio frequency switches with voltage equalization |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3043958A (en) * | 1959-09-14 | 1962-07-10 | Philips Corp | Circuit element |
| DE1190506B (de) * | 1963-10-10 | 1965-04-08 | Siemens Ag | Optisch gesteuerte, mindestens vier Zonen von abwechselnd unterschiedlichem Leitungstyp aufweisende Schalt- oder Kippdiode |
| JPS5457983A (en) * | 1977-10-18 | 1979-05-10 | Toshiba Corp | Optical semiconductor device |
| JPS6355978A (ja) * | 1986-08-26 | 1988-03-10 | Yokogawa Electric Corp | 半導体装置 |
| JP2629428B2 (ja) * | 1990-10-01 | 1997-07-09 | 日本電気株式会社 | 砒化ガリウムｆｅｔ集積回路 |
| JPH05226688A (ja) * | 1992-01-08 | 1993-09-03 | Nec Corp | フォトカプラ |
| US5347239A (en) * | 1992-12-03 | 1994-09-13 | Hewlett-Packard Company | Step attenuator |
-
1997
- 1997-04-01 US US08/829,924 patent/US5808322A/en not_active Expired - Fee Related
-
1998
- 1998-01-29 DE DE69801177T patent/DE69801177T2/de not_active Expired - Fee Related
- 1998-01-29 EP EP98101556A patent/EP0869611B1/en not_active Expired - Lifetime
- 1998-03-19 JP JP10070883A patent/JPH118525A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004024367A1 (de) * | 2004-05-17 | 2005-12-22 | Rohde & Schwarz Gmbh & Co. Kg | Kalibrierbare Mikrowellen-Schaltung mit beleuchtbaren GaAs-FET sowie Kalibriervorrichtung und Verfahren zur Kalibrierung |
| US7498552B2 (en) | 2004-05-17 | 2009-03-03 | Rohde & Schwarz Gmbh & Co. Kg | Calibratable microwave circuit with illuminable GaAs-FET, calibrating device and process |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0869611A1 (en) | 1998-10-07 |
| US5808322A (en) | 1998-09-15 |
| JPH118525A (ja) | 1999-01-12 |
| DE69801177D1 (de) | 2001-08-30 |
| EP0869611B1 (en) | 2001-07-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8327 | Change in the person/name/address of the patent owner |
Owner name: AGILENT TECHNOLOGIES INC., A DELAWARE CORP., PALO |
|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: AGILENT TECHNOLOGIES, INC. (N.D.GES.D.STAATES DELA |
|
| 8327 | Change in the person/name/address of the patent owner |
Owner name: AGILENT TECHNOLOGIES, INC. (N.D.GES.D. STAATES, US |
|
| 8339 | Ceased/non-payment of the annual fee |