JPH118525A - ＧａＡｓ ＦＥＴスイッチ及びステップ減衰器ユニット - Google Patents

ＧａＡｓ ＦＥＴスイッチ及びステップ減衰器ユニット

Info

Publication number
JPH118525A
JPH118525A JP10070883A JP7088398A JPH118525A JP H118525 A JPH118525 A JP H118525A JP 10070883 A JP10070883 A JP 10070883A JP 7088398 A JP7088398 A JP 7088398A JP H118525 A JPH118525 A JP H118525A
Authority
JP
Japan
Prior art keywords
gaas
step attenuator
switch
gaas fet
led
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10070883A
Other languages
English (en)
Japanese (ja)
Other versions
JPH118525A5 (enExample
Inventor
Dean B Nicholson
ディーン・ビー・ニコルソン
Eric R Ehlers
エリック・アール・アーラーズ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of JPH118525A publication Critical patent/JPH118525A/ja
Publication of JPH118525A5 publication Critical patent/JPH118525A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices

Landscapes

  • Led Devices (AREA)
  • Non-Reversible Transmitting Devices (AREA)
  • Attenuators (AREA)
  • Networks Using Active Elements (AREA)
  • Junction Field-Effect Transistors (AREA)
JP10070883A 1997-04-01 1998-03-19 ＧａＡｓ ＦＥＴスイッチ及びステップ減衰器ユニット Pending JPH118525A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/829,924 US5808322A (en) 1997-04-01 1997-04-01 Faster switching GaAs FET switches by illumination with high intensity light
US829,924 1997-04-01

Publications (2)

Publication Number Publication Date
JPH118525A true JPH118525A (ja) 1999-01-12
JPH118525A5 JPH118525A5 (enExample) 2005-09-08

Family

ID=25255917

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10070883A Pending JPH118525A (ja) 1997-04-01 1998-03-19 ＧａＡｓ ＦＥＴスイッチ及びステップ減衰器ユニット

Country Status (4)

Country Link
US (1) US5808322A (enExample)
EP (1) EP0869611B1 (enExample)
JP (1) JPH118525A (enExample)
DE (1) DE69801177T2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008182291A (ja) * 2007-01-23 2008-08-07 Yokogawa Electric Corp スイッチ回路およびこのスイッチ回路を用いたステップアッテネータ

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10228810B4 (de) * 2002-06-27 2010-09-30 Rohde & Schwarz Gmbh & Co. Kg Mikrowellen-Schaltung mit beleuchteten Feldeffekt-Transistoren
DE102004024367A1 (de) * 2004-05-17 2005-12-22 Rohde & Schwarz Gmbh & Co. Kg Kalibrierbare Mikrowellen-Schaltung mit beleuchtbaren GaAs-FET sowie Kalibriervorrichtung und Verfahren zur Kalibrierung
US7847301B2 (en) * 2004-12-08 2010-12-07 Agilent Technologies, Inc. Electronic microcircuit having internal light enhancement
US8022519B2 (en) 2005-05-19 2011-09-20 Sandisk Technologies Inc. System-in-a-package based flash memory card
US20070126525A1 (en) * 2005-12-01 2007-06-07 Nicholson Dean B Dual path attenuation system
WO2016198100A1 (en) 2015-06-10 2016-12-15 Advantest Corporation High frequency integrated circuit and emitting device for irradiating the integrated circuit
US9590591B1 (en) * 2016-03-17 2017-03-07 Analog Devices Global High frequency signal attenuators
US10326018B1 (en) 2018-02-28 2019-06-18 Nxp Usa, Inc. RF switches, integrated circuits, and devices with multi-gate field effect transistors and voltage leveling circuits, and methods of their fabrication
US10784862B1 (en) 2019-09-10 2020-09-22 Nxp Usa, Inc. High speed switching radio frequency switches
US10972091B1 (en) 2019-12-03 2021-04-06 Nxp Usa, Inc. Radio frequency switches with voltage equalization
US11368180B2 (en) 2020-07-31 2022-06-21 Nxp Usa, Inc. Switch circuits with parallel transistor stacks and methods of their operation
US11683028B2 (en) 2021-03-03 2023-06-20 Nxp Usa, Inc. Radio frequency switches with voltage equalization

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3043958A (en) * 1959-09-14 1962-07-10 Philips Corp Circuit element
DE1190506B (de) * 1963-10-10 1965-04-08 Siemens Ag Optisch gesteuerte, mindestens vier Zonen von abwechselnd unterschiedlichem Leitungstyp aufweisende Schalt- oder Kippdiode
JPS5457983A (en) * 1977-10-18 1979-05-10 Toshiba Corp Optical semiconductor device
JPS6355978A (ja) * 1986-08-26 1988-03-10 Yokogawa Electric Corp 半導体装置
JP2629428B2 (ja) * 1990-10-01 1997-07-09 日本電気株式会社 砒化ガリウムｆｅｔ集積回路
JPH05226688A (ja) * 1992-01-08 1993-09-03 Nec Corp フォトカプラ
US5347239A (en) * 1992-12-03 1994-09-13 Hewlett-Packard Company Step attenuator

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008182291A (ja) * 2007-01-23 2008-08-07 Yokogawa Electric Corp スイッチ回路およびこのスイッチ回路を用いたステップアッテネータ

Also Published As

Publication number Publication date
EP0869611A1 (en) 1998-10-07
DE69801177T2 (de) 2002-03-21
US5808322A (en) 1998-09-15
DE69801177D1 (de) 2001-08-30
EP0869611B1 (en) 2001-07-25

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