DE69801177D1 - GaAs FET Schalter mit erhöhter Schaltgeschwindigkeit durch Beleuchtung mit Licht hoher Intensität - Google Patents

GaAs FET Schalter mit erhöhter Schaltgeschwindigkeit durch Beleuchtung mit Licht hoher Intensität

Info

Publication number
DE69801177D1
DE69801177D1 DE69801177T DE69801177T DE69801177D1 DE 69801177 D1 DE69801177 D1 DE 69801177D1 DE 69801177 T DE69801177 T DE 69801177T DE 69801177 T DE69801177 T DE 69801177T DE 69801177 D1 DE69801177 D1 DE 69801177D1
Authority
DE
Germany
Prior art keywords
lighting
high intensity
switching speed
intensity light
fet switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69801177T
Other languages
English (en)
Other versions
DE69801177T2 (de
Inventor
Dean B Nicholson
Eric R Ehlers
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Application granted granted Critical
Publication of DE69801177D1 publication Critical patent/DE69801177D1/de
Publication of DE69801177T2 publication Critical patent/DE69801177T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Attenuators (AREA)
  • Networks Using Active Elements (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Non-Reversible Transmitting Devices (AREA)
DE69801177T 1997-04-01 1998-01-29 GaAs FET Schalter mit erhöhter Schaltgeschwindigkeit durch Beleuchtung mit Licht hoher Intensität Expired - Fee Related DE69801177T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/829,924 US5808322A (en) 1997-04-01 1997-04-01 Faster switching GaAs FET switches by illumination with high intensity light

Publications (2)

Publication Number Publication Date
DE69801177D1 true DE69801177D1 (de) 2001-08-30
DE69801177T2 DE69801177T2 (de) 2002-03-21

Family

ID=25255917

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69801177T Expired - Fee Related DE69801177T2 (de) 1997-04-01 1998-01-29 GaAs FET Schalter mit erhöhter Schaltgeschwindigkeit durch Beleuchtung mit Licht hoher Intensität

Country Status (4)

Country Link
US (1) US5808322A (de)
EP (1) EP0869611B1 (de)
JP (1) JPH118525A (de)
DE (1) DE69801177T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10228810B4 (de) * 2002-06-27 2010-09-30 Rohde & Schwarz Gmbh & Co. Kg Mikrowellen-Schaltung mit beleuchteten Feldeffekt-Transistoren
DE102004024367A1 (de) * 2004-05-17 2005-12-22 Rohde & Schwarz Gmbh & Co. Kg Kalibrierbare Mikrowellen-Schaltung mit beleuchtbaren GaAs-FET sowie Kalibriervorrichtung und Verfahren zur Kalibrierung
US7847301B2 (en) * 2004-12-08 2010-12-07 Agilent Technologies, Inc. Electronic microcircuit having internal light enhancement
US8022519B2 (en) 2005-05-19 2011-09-20 Sandisk Technologies Inc. System-in-a-package based flash memory card
US20070126525A1 (en) * 2005-12-01 2007-06-07 Nicholson Dean B Dual path attenuation system
JP4935373B2 (ja) * 2007-01-23 2012-05-23 横河電機株式会社 スイッチ回路およびこのスイッチ回路を用いたステップアッテネータ
WO2016198100A1 (en) 2015-06-10 2016-12-15 Advantest Corporation High frequency integrated circuit and emitting device for irradiating the integrated circuit
US9590591B1 (en) * 2016-03-17 2017-03-07 Analog Devices Global High frequency signal attenuators
US10326018B1 (en) 2018-02-28 2019-06-18 Nxp Usa, Inc. RF switches, integrated circuits, and devices with multi-gate field effect transistors and voltage leveling circuits, and methods of their fabrication
US10784862B1 (en) 2019-09-10 2020-09-22 Nxp Usa, Inc. High speed switching radio frequency switches
US10972091B1 (en) 2019-12-03 2021-04-06 Nxp Usa, Inc. Radio frequency switches with voltage equalization
US11368180B2 (en) 2020-07-31 2022-06-21 Nxp Usa, Inc. Switch circuits with parallel transistor stacks and methods of their operation
US11683028B2 (en) 2021-03-03 2023-06-20 Nxp Usa, Inc. Radio frequency switches with voltage equalization

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3043958A (en) * 1959-09-14 1962-07-10 Philips Corp Circuit element
DE1190506B (de) * 1963-10-10 1965-04-08 Siemens Ag Optisch gesteuerte, mindestens vier Zonen von abwechselnd unterschiedlichem Leitungstyp aufweisende Schalt- oder Kippdiode
JPS5457983A (en) * 1977-10-18 1979-05-10 Toshiba Corp Optical semiconductor device
JPS6355978A (ja) * 1986-08-26 1988-03-10 Yokogawa Electric Corp 半導体装置
JP2629428B2 (ja) * 1990-10-01 1997-07-09 日本電気株式会社 砒化ガリウムｆｅｔ集積回路
JPH05226688A (ja) * 1992-01-08 1993-09-03 Nec Corp フォトカプラ
US5347239A (en) * 1992-12-03 1994-09-13 Hewlett-Packard Company Step attenuator

Also Published As

Publication number Publication date
EP0869611A1 (de) 1998-10-07
DE69801177T2 (de) 2002-03-21
US5808322A (en) 1998-09-15
JPH118525A (ja) 1999-01-12
EP0869611B1 (de) 2001-07-25

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: AGILENT TECHNOLOGIES INC., A DELAWARE CORP., PALO

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AGILENT TECHNOLOGIES, INC. (N.D.GES.D.STAATES DELA

8327 Change in the person/name/address of the patent owner

Owner name: AGILENT TECHNOLOGIES, INC. (N.D.GES.D. STAATES, US

8339 Ceased/non-payment of the annual fee