DE69732765T2 - Nullstromschaltung zur Verwendung während einer Verbindungsoption - Google Patents

Nullstromschaltung zur Verwendung während einer Verbindungsoption Download PDF

Info

Publication number
DE69732765T2
DE69732765T2 DE69732765T DE69732765T DE69732765T2 DE 69732765 T2 DE69732765 T2 DE 69732765T2 DE 69732765 T DE69732765 T DE 69732765T DE 69732765 T DE69732765 T DE 69732765T DE 69732765 T2 DE69732765 T2 DE 69732765T2
Authority
DE
Germany
Prior art keywords
signal
circuit
transistor
line
contacting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69732765T
Other languages
German (de)
English (en)
Other versions
DE69732765D1 (de
Inventor
Jiu An
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalFoundries Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of DE69732765D1 publication Critical patent/DE69732765D1/de
Publication of DE69732765T2 publication Critical patent/DE69732765T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/1731Optimisation thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/547Dispositions of multiple bond wires
    • H10W72/5473Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/931Shapes of bond pads
    • H10W72/932Plan-view shape, i.e. in top view
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Wire Bonding (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
DE69732765T 1997-06-16 1997-12-08 Nullstromschaltung zur Verwendung während einer Verbindungsoption Expired - Lifetime DE69732765T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US876213 1997-06-16
US08/876,213 US5920227A (en) 1997-06-16 1997-06-16 Zero current draw circuit for use during a bonding option

Publications (2)

Publication Number Publication Date
DE69732765D1 DE69732765D1 (de) 2005-04-21
DE69732765T2 true DE69732765T2 (de) 2005-08-11

Family

ID=25367212

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69732765T Expired - Lifetime DE69732765T2 (de) 1997-06-16 1997-12-08 Nullstromschaltung zur Verwendung während einer Verbindungsoption

Country Status (4)

Country Link
US (1) US5920227A (https=)
EP (1) EP0886380B1 (https=)
JP (1) JPH1117119A (https=)
DE (1) DE69732765T2 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW417267B (en) * 1997-11-20 2001-01-01 Davicom Semiconductor Inc Structure of bonding option
JP2000223576A (ja) * 1999-02-02 2000-08-11 Rohm Co Ltd 集積回路
JP3423904B2 (ja) * 1999-10-06 2003-07-07 沖電気工業株式会社 半導体集積回路
EP1132963B1 (en) 2000-03-08 2007-10-17 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit
KR100426989B1 (ko) * 2001-06-13 2004-04-13 삼성전자주식회사 패키지 전원핀을 이용한 제어신호 인가방법 및 그에 따른집적회로 패키지 구조
US7131033B1 (en) 2002-06-21 2006-10-31 Cypress Semiconductor Corp. Substrate configurable JTAG ID scheme
US7818640B1 (en) 2004-10-22 2010-10-19 Cypress Semiconductor Corporation Test system having a master/slave JTAG controller
JP2006245063A (ja) 2005-02-28 2006-09-14 Nec Electronics Corp 半導体チップおよび半導体チップを搭載する半導体装置
EP2139114A1 (en) * 2008-06-23 2009-12-30 Dialog Semiconductor GmbH Ultra-low current push-buttom switch interface circuit
WO2016117072A1 (ja) * 2015-01-22 2016-07-28 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56153832A (en) * 1980-04-30 1981-11-28 Nec Corp Digital to analog converter
JPH03104315A (ja) * 1989-09-19 1991-05-01 Matsushita Electron Corp Cmos半導体装置の入力端子電位固定回路
JPH0562465A (ja) * 1991-08-30 1993-03-12 Hitachi Ltd ボンデイングオプシヨン回路、及び半導体集積回路
DE69326284T2 (de) * 1992-06-10 2000-03-23 Nec Corp., Tokio/Tokyo Halbleiteranordnung mit anschlusswählender Schaltung
JPH06195476A (ja) * 1992-07-21 1994-07-15 Advanced Micro Devicds Inc マイクロコントローラを組入れる集積回路およびそれによる電力消費を減じるための方法
FR2694851B1 (fr) * 1992-08-12 1994-12-23 Sgs Thomson Microelectronics Circuit de tirage vers un état déterminé d'une entrée de circuit intégré.
EP0670548A1 (en) * 1994-02-28 1995-09-06 STMicroelectronics, Inc. Method and structure for recovering smaller density memories from larger density memories
US5684411A (en) * 1995-10-13 1997-11-04 Seiko Communications Systems, Inc. Self-configuring bus

Also Published As

Publication number Publication date
EP0886380A3 (en) 2000-02-16
JPH1117119A (ja) 1999-01-22
US5920227A (en) 1999-07-06
EP0886380A2 (en) 1998-12-23
DE69732765D1 (de) 2005-04-21
EP0886380B1 (en) 2005-03-16

Similar Documents

Publication Publication Date Title
DE3881130T2 (de) MOS-Eingangs-/Ausgangsschutz unter Benutzung eines Entwurfs mit umschaltbarem Körperpotential.
DE69422243T2 (de) MOS-Ausgangsschaltung mit Schutz gegen Leckströmen
DE69412652T2 (de) Übermittlung von logischen Signalen sehr niedriger Spannung zwischen CMOS-Chips für eine grosse Anzahl Hochgeschwindigkeitsausgangsleitungen mit jeweils grosser kapazitiver Last
DE69809623T2 (de) Logische MOS-Schaltung und Halbleitervorrichtung
DE3688088T2 (de) Integrierte halbleiterschaltung.
DE69520848T2 (de) Ausgangsschaltung zur Verwendung in einer integrierten Halbleiterschaltung
DE69117420T2 (de) CMOS off-chip-Treiber für eine fehlergeschützte kalte Ersatzschaltung
DE69839067T2 (de) Regelwandlerschaltung und integrierte Halbleiterschaltung, in der diese verwendet wird
DE19533958C2 (de) Schutzschaltung gegen elektrostatische Entladungen enthaltend eine Kondensatorschaltung
DE69327357T2 (de) Integrierte Halbleiterschaltungsanordnung
DE69622465T2 (de) Verfahren und Apparat zum Koppeln verschiedener, unabhängiger on-Chip-Vdd-Busse an eine ESD-Klemme
DE69216142T2 (de) Vereinfachte Ausgangspufferschaltung mit niedriger Störspannung
DE3787945T2 (de) Chip-Ausgangsschnittstellenschaltung.
DE60031214T2 (de) Spannungsschutzschaltung und -Verfahren für einen Eingangs/Ausgangsanschluss
DE4034458A1 (de) Signalverzoegerungsschaltung
DE60027899T2 (de) System und verfahren zur unabhängigen versorgungsfolge integrierter schaltungen
DE69732765T2 (de) Nullstromschaltung zur Verwendung während einer Verbindungsoption
DE69837242T2 (de) Komplementäres MOS-Halbleiterbauelement
DE19827454A1 (de) Logische CMOS-Schaltung und Treiberverfahren dafür
DE69619468T2 (de) Ausgangstreiber für Systeme mit gemischtem Spannungsbetrieb
DE60005259T2 (de) Einzelgatteroxid Tiefsetzstellerschaltkreis mit Überspannungsschutz
DE102018208547A1 (de) Schutzeinrichtung für elektrostatische Entladung
DE68922240T2 (de) Komplementärausgangsschaltung für eine logische Schaltung.
DE2348643A1 (de) Integrierte schutzschaltung fuer einen hauptschaltkreis aus feldeffekttransistoren
DE69522161T2 (de) Vorrichtung und Verfahren zum Schutz einer elektrischen Schaltung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: GLOBALFOUNDRIES INC., GRAND CAYMAN, KY

8328 Change in the person/name/address of the agent

Representative=s name: GRUENECKER, KINKELDEY, STOCKMAIR & SCHWANHAEUSSER,