DE69730267D1 - Entwickeltes Resistmaterial und sein Herstellungsverfahren - Google Patents

Entwickeltes Resistmaterial und sein Herstellungsverfahren

Info

Publication number
DE69730267D1
DE69730267D1 DE69730267T DE69730267T DE69730267D1 DE 69730267 D1 DE69730267 D1 DE 69730267D1 DE 69730267 T DE69730267 T DE 69730267T DE 69730267 T DE69730267 T DE 69730267T DE 69730267 D1 DE69730267 D1 DE 69730267D1
Authority
DE
Germany
Prior art keywords
manufacturing process
resist material
developed resist
developed
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69730267T
Other languages
English (en)
Other versions
DE69730267T2 (de
Inventor
Tetsuyoshi Ishii
Hiroshi Nozawa
Toshiaki Tamamura
Kenji Kurihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of DE69730267D1 publication Critical patent/DE69730267D1/de
Application granted granted Critical
Publication of DE69730267T2 publication Critical patent/DE69730267T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/008—Azides
    • G03F7/0085—Azides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S427/00—Coating processes
    • Y10S427/102—Fullerene type base or coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/913—Material designed to be responsive to temperature, light, moisture
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S524/00—Synthetic resins or natural rubbers -- part of the class 520 series
    • Y10S524/905—Etch masking compositions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31511—Of epoxy ether
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31855—Of addition polymer from unsaturated monomers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
DE1997630267 1996-06-07 1997-06-06 Entwickeltes Resistmaterial und sein Herstellungsverfahren Expired - Lifetime DE69730267T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP16660796 1996-06-07
JP16660796 1996-06-07
JP24256096 1996-08-27
JP24256096 1996-08-27
JP3853897 1997-02-07
JP3853897 1997-02-07

Publications (2)

Publication Number Publication Date
DE69730267D1 true DE69730267D1 (de) 2004-09-23
DE69730267T2 DE69730267T2 (de) 2005-09-01

Family

ID=27289863

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1997630267 Expired - Lifetime DE69730267T2 (de) 1996-06-07 1997-06-06 Entwickeltes Resistmaterial und sein Herstellungsverfahren

Country Status (4)

Country Link
US (2) US6177231B1 (de)
EP (1) EP0811879B1 (de)
KR (1) KR100234143B1 (de)
DE (1) DE69730267T2 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
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KR100234143B1 (ko) * 1996-06-07 1999-12-15 미야즈 쥰이치로 레지스트 물질 및 그 제조 방법
JP3032833B2 (ja) * 1997-09-22 2000-04-17 ザ ユニバーシティ オブ バーミンガム 電子線レジスト
JP3955148B2 (ja) * 1998-04-13 2007-08-08 富士通株式会社 レジスト組成物およびパターン形成方法
JP3161416B2 (ja) * 1998-06-17 2001-04-25 日本電気株式会社 パターン描画方法
RU2228485C2 (ru) * 1998-07-03 2004-05-10 Тойота Дзидося Кабусики Кайся Способ и установка для аккумулирования газа, вещество, поглощающее газ, и способ его получения
JP2000199968A (ja) * 1999-01-06 2000-07-18 Sony Corp 多層レジスト構造およびこれを用いた３次元微細構造の作製方法
JP2001125268A (ja) * 1999-10-28 2001-05-11 Sony Corp 露光方法
AU3970401A (en) * 1999-11-29 2001-06-04 Trustees Of The University Of Pennsylvania, The Fabrication of nanometer size gaps on an electrode
JP2002040660A (ja) * 2000-07-21 2002-02-06 Sony Corp 露光方法
JP3768819B2 (ja) * 2001-01-31 2006-04-19 株式会社ルネサステクノロジ 半導体装置の製造方法
US6589709B1 (en) 2001-03-28 2003-07-08 Advanced Micro Devices, Inc. Process for preventing deformation of patterned photoresist features
US6815359B2 (en) * 2001-03-28 2004-11-09 Advanced Micro Devices, Inc. Process for improving the etch stability of ultra-thin photoresist
US6653231B2 (en) * 2001-03-28 2003-11-25 Advanced Micro Devices, Inc. Process for reducing the critical dimensions of integrated circuit device features
US6774365B2 (en) 2001-03-28 2004-08-10 Advanced Micro Devices, Inc. SEM inspection and analysis of patterned photoresist features
US6828259B2 (en) * 2001-03-28 2004-12-07 Advanced Micro Devices, Inc. Enhanced transistor gate using E-beam radiation
US6716571B2 (en) 2001-03-28 2004-04-06 Advanced Micro Devices, Inc. Selective photoresist hardening to facilitate lateral trimming
JP2003066600A (ja) * 2001-06-12 2003-03-05 Canon Inc フォトレジスト、これを用いた基板の加工方法、及びフォトレジストの製造方法
KR20030002739A (ko) * 2001-06-29 2003-01-09 주식회사 하이닉스반도체 반도체 소자의 포토레지스트 제조 방법 및 이를 이용한포토레지스트 패턴 형성 방법
US20060151435A1 (en) * 2002-09-18 2006-07-13 Jun Taniguchi Surface processing method
KR100947702B1 (ko) * 2003-02-26 2010-03-16 삼성전자주식회사 경화성 작용기로 표면수식된 탄소나노튜브를 이용한패턴박막 형성방법 및 고분자 복합체의 제조방법
US6861208B2 (en) * 2003-03-18 2005-03-01 The United States Of America As Represented By The Secretary Of The Army Fullerene addition in photoresist via incorporation in the developer
JP4630077B2 (ja) * 2005-01-27 2011-02-09 日本電信電話株式会社 レジストパターン形成方法
JP4555698B2 (ja) * 2005-01-27 2010-10-06 日本電信電話株式会社 レジストパターン形成方法
KR101034346B1 (ko) 2006-12-22 2011-05-16 주식회사 엘지화학 탄소 나노 튜브를 통한 내열성 개선의 감광성 수지 조성물
TWI432408B (zh) * 2007-01-09 2014-04-01 Jsr Corp 化合物及敏輻射線性組成物
US7956345B2 (en) * 2007-01-24 2011-06-07 Stmicroelectronics Asia Pacific Pte. Ltd. CNT devices, low-temperature fabrication of CNT and CNT photo-resists
KR101526627B1 (ko) * 2007-08-13 2015-06-05 제이에스알 가부시끼가이샤 화합물 및 감방사선성 조성물
US8470518B2 (en) * 2007-09-14 2013-06-25 E I Du Pont De Nemours And Company Photosensitive element having reinforcing particles and method for preparing a printing form from the element
US8105754B2 (en) * 2008-01-04 2012-01-31 University Of Florida Research Foundation, Inc. Functionalized fullerenes for nanolithography applications
JP2010016259A (ja) * 2008-07-04 2010-01-21 Panasonic Corp パターン形成方法

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JPH0661138A (ja) * 1992-08-11 1994-03-04 Toray Ind Inc 二層構造レジストを有する基板およびその製造方法
JPH06242543A (ja) * 1993-02-18 1994-09-02 Fuji Photo Film Co Ltd ハロゲン化銀感光材料
JPH07134413A (ja) 1993-03-23 1995-05-23 At & T Corp フラーレン含有レジスト材料を用いたデバイス作製プロセス
US5453413A (en) 1993-06-08 1995-09-26 Nanotechnologies, Inc. Phototransformation of fullerenes
JPH0733751A (ja) * 1993-07-26 1995-02-03 Nippon Oil Co Ltd フラーレン誘導体および感光材料
JP3298735B2 (ja) * 1994-04-28 2002-07-08 科学技術振興事業団 フラーレン複合体
US6077401A (en) * 1994-08-15 2000-06-20 Midwest Research Institute Production of fullerenes using concentrated solar flux
US5759725A (en) * 1994-12-01 1998-06-02 Kabushiki Kaisha Toshiba Photoconductors and electrophotographic photoreceptors containing amorphous fullerenes
KR100234143B1 (ko) * 1996-06-07 1999-12-15 미야즈 쥰이치로 레지스트 물질 및 그 제조 방법
JP2878654B2 (ja) * 1996-09-13 1999-04-05 理化学研究所 感光性樹脂組成物

Also Published As

Publication number Publication date
US6177231B1 (en) 2001-01-23
DE69730267T2 (de) 2005-09-01
US6395447B1 (en) 2002-05-28
KR100234143B1 (ko) 1999-12-15
KR19980069784A (ko) 1998-10-26
EP0811879B1 (de) 2004-08-18
EP0811879A1 (de) 1997-12-10

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