DE69728634D1 - Reinigung- und Entschichtungsverfahren für die Lithographie - Google Patents

Reinigung- und Entschichtungsverfahren für die Lithographie

Info

Publication number
DE69728634D1
DE69728634D1 DE69728634T DE69728634T DE69728634D1 DE 69728634 D1 DE69728634 D1 DE 69728634D1 DE 69728634 T DE69728634 T DE 69728634T DE 69728634 T DE69728634 T DE 69728634T DE 69728634 D1 DE69728634 D1 DE 69728634D1
Authority
DE
Germany
Prior art keywords
lithography
cleaning
stripping processes
stripping
processes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69728634T
Other languages
English (en)
Other versions
DE69728634T2 (de
Inventor
Kenji Yamamoto
Akihiko Igawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Clariant Finance BVI Ltd
Original Assignee
Clariant Finance BVI Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clariant Finance BVI Ltd filed Critical Clariant Finance BVI Ltd
Application granted granted Critical
Publication of DE69728634D1 publication Critical patent/DE69728634D1/de
Publication of DE69728634T2 publication Critical patent/DE69728634T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Detergent Compositions (AREA)
  • Paints Or Removers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
DE69728634T 1996-12-26 1997-12-18 Reinigung- und Entschichtungsverfahren für die Lithographie Expired - Fee Related DE69728634T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8347576A JPH10186680A (ja) 1996-12-26 1996-12-26 リンス液

Publications (2)

Publication Number Publication Date
DE69728634D1 true DE69728634D1 (de) 2004-05-19
DE69728634T2 DE69728634T2 (de) 2005-04-21

Family

ID=18391158

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69728634T Expired - Fee Related DE69728634T2 (de) 1996-12-26 1997-12-18 Reinigung- und Entschichtungsverfahren für die Lithographie

Country Status (8)

Country Link
US (1) US5964951A (de)
EP (1) EP0851305B1 (de)
JP (1) JPH10186680A (de)
KR (2) KR19980064555A (de)
CN (1) CN1191891A (de)
DE (1) DE69728634T2 (de)
SG (1) SG55429A1 (de)
TW (1) TW393592B (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6815151B2 (en) 1997-09-05 2004-11-09 Tokyo Ohika Kogyo Co., Ltd. Rinsing solution for lithography and method for processing substrate with the use of the same
KR100594815B1 (ko) * 1999-12-24 2006-07-03 삼성전자주식회사 포토레지스트 린스용 씬너 및 이를 이용한 포토레지스트막의 처리 방법
US6274296B1 (en) 2000-06-08 2001-08-14 Shipley Company, L.L.C. Stripper pretreatment
US6350560B1 (en) 2000-08-07 2002-02-26 Shipley Company, L.L.C. Rinse composition
KR100638243B1 (ko) * 2000-11-20 2006-10-24 주식회사 동진쎄미켐 액정 디스플레이 디바이스용 레지스트 세정액 조성물
JP4297408B2 (ja) * 2001-05-11 2009-07-15 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 厚膜フォトレジストとこれらの使用方法
KR100483846B1 (ko) * 2002-10-15 2005-04-19 삼성전자주식회사 신너 조성물 및 이를 사용한 포토레지스트의 스트립핑 방법
US6682876B2 (en) * 2001-12-14 2004-01-27 Samsung Electronics Co., Ltd. Thinner composition and method of stripping a photoresist using the same
JP4146198B2 (ja) * 2002-09-11 2008-09-03 富士通株式会社 マグネシウム合金材リサイクル用の被塗装マグネシウム合金材塗膜除去方法
EP1552344A4 (de) * 2002-09-19 2009-04-01 Fujifilm Electronic Materials Verfahren zur entfernung einer abbildungsschicht von einem halbleitersubstratstapel
KR101215429B1 (ko) 2003-10-20 2012-12-26 주식회사 동진쎄미켐 포토레지스트 제거용 씬너 조성물
KR100718639B1 (ko) 2004-10-27 2007-05-16 주식회사 이엔에프테크놀로지 안료 분산형 감광제 제거용 세정제 조성물
CN100340340C (zh) * 2004-10-29 2007-10-03 中国石油化工股份有限公司 一种积炭清洗剂及其在失活催化剂再生过程中的应用
JP2007034066A (ja) * 2005-07-28 2007-02-08 Tokyo Ohka Kogyo Co Ltd リソグラフィー用洗浄液
JP4588590B2 (ja) * 2005-09-09 2010-12-01 ダイセル化学工業株式会社 リソグラフィー用洗浄剤又はリンス剤
KR20070081572A (ko) * 2006-02-13 2007-08-17 삼성전자주식회사 슬릿 코터 세정제, 표시장치 제조용 슬릿 코터 및표시장치의 제조방법
CN100459057C (zh) * 2006-05-22 2009-02-04 中芯国际集成电路制造(上海)有限公司 晶圆表面的清洗方法
DE102008042356A1 (de) 2008-09-25 2010-04-08 Carl Zeiss Smt Ag Projektionsbelichtungsanlage mit optimierter Justagemöglichkeit
NL2003421A (en) * 2008-10-21 2010-04-22 Asml Netherlands Bv Lithographic apparatus and a method of removing contamination.
TW201039076A (en) * 2010-07-08 2010-11-01 Rong yi chemical co ltd Photoresist stripper
DE102010041528A1 (de) 2010-09-28 2012-03-29 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage mit optimierter Justagemöglichkeit
DE102012216286A1 (de) 2011-09-30 2013-04-04 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage mit optimiertem Messsystem
JP5914073B2 (ja) * 2012-03-16 2016-05-11 株式会社ブリヂストン 洗浄液組成物
DE102012212758A1 (de) 2012-07-20 2014-01-23 Carl Zeiss Smt Gmbh Systemkorrektur aus langen Zeitskalen
CN104779178B (zh) * 2014-01-13 2018-10-16 中芯国际集成电路制造(上海)有限公司 底部防反射层形成方法
CN106211598B (zh) * 2016-08-31 2019-01-18 广东成德电子科技股份有限公司 一种印制电路板的有机退膜剂及其制备方法
CN106959591B (zh) * 2017-04-11 2020-10-27 安徽高芯众科半导体有限公司 一种黄光制程光刻机零部件正光阻再生方法
CN109433663A (zh) * 2018-10-30 2019-03-08 深圳市路维光电股份有限公司 掩膜版制程槽清洗方法
CN113741157A (zh) * 2021-08-11 2021-12-03 泗洪明芯半导体有限公司 一种芯片制程中环境友好的定影方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2751373A (en) * 1953-11-25 1956-06-19 Eastman Kodak Co Light-sensitive polymers for photomechanical processes
US2811509A (en) * 1954-06-11 1957-10-29 Eastman Kodak Co Light-sensitive polymers for photography
US3763086A (en) * 1961-10-05 1973-10-02 Oreal Colored organic polyanhydride polymers
US3854946A (en) * 1970-11-27 1974-12-17 Upjohn Co Process for chemically bonding a dyestuff to a polymeric substrate
US3980587A (en) * 1974-08-16 1976-09-14 G. T. Schjeldahl Company Stripper composition
DE3012522A1 (de) * 1980-03-31 1981-10-08 Hoechst Ag, 6000 Frankfurt Verfahren und entwicklerloesung zum entwickeln von belichteten negativ arbeitenden diazoniumsalzschichten
US4910122A (en) * 1982-09-30 1990-03-20 Brewer Science, Inc. Anti-reflective coating
US4786580A (en) * 1983-12-27 1988-11-22 Hoechst Celanese Corporation Method of developing imaged diazo material with propanol containing developer composition
US4550069A (en) * 1984-06-11 1985-10-29 American Hoechst Corporation Positive photoresist compositions with o-quinone diazide, novolak, and propylene glycol alkyl ether acetate
US5066561A (en) * 1984-06-11 1991-11-19 Hoechst Celanese Corporation Method for producing and using a positive photoresist with o-quinone diazide, novolak, and propylene glycol alkyl ether acetate
US4592787A (en) * 1984-11-05 1986-06-03 The Dow Chemical Company Composition useful for stripping photoresist polymers and method
US4609614A (en) * 1985-06-24 1986-09-02 Rca Corporation Process of using absorptive layer in optical lithography with overlying photoresist layer to form relief pattern on substrate
DE3537441A1 (de) * 1985-10-22 1987-04-23 Hoechst Ag Loesemittel zum entfernen von photoresists
US5039594A (en) * 1985-10-28 1991-08-13 Hoechst Celanese Corporation Positive photoresist containing a mixture of propylene glycol alkyl ethers and propylene glycol alkyl ether acetate
US4983490A (en) * 1985-10-28 1991-01-08 Hoechst Celanese Corporation Photoresist treating composition consisting of a mixture of propylene glycol alkyl ether and propylene glycol alkyl ether acetate
EP0221428B1 (de) * 1985-10-28 1989-11-23 Hoechst Celanese Corporation Behandlungsflüssigkeit für ein Photoresistgemisch und hierfür geeignetes Verfahren
US4822723A (en) * 1987-11-30 1989-04-18 Hoechst Celanese Corporation Developer compositions for heavy-duty lithographic printing plates
US4886728A (en) * 1988-01-06 1989-12-12 Olin Hunt Specialty Products Inc. Use of particular mixtures of ethyl lactate and methyl ethyl ketone to remove undesirable peripheral material (e.g. edge beads) from photoresist-coated substrates
JPH01296246A (ja) * 1988-05-24 1989-11-29 Dainippon Printing Co Ltd 感材の現像方法
US5294680A (en) * 1992-07-24 1994-03-15 International Business Machines Corporation Polymeric dyes for antireflective coatings
DE9304878U1 (de) * 1993-03-31 1993-06-09 Morton International, Inc., Chicago, Ill. Entschichterlösung für lichtvernetzte Photoresistschablonen

Also Published As

Publication number Publication date
JPH10186680A (ja) 1998-07-14
DE69728634T2 (de) 2005-04-21
SG55429A1 (en) 1998-12-21
US5964951A (en) 1999-10-12
CN1191891A (zh) 1998-09-02
EP0851305B1 (de) 2004-04-14
KR19980064555A (ko) 1998-10-07
KR100593280B1 (ko) 2006-06-28
EP0851305A1 (de) 1998-07-01
TW393592B (en) 2000-06-11

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication of lapse of patent is to be deleted
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee