DE69931690D1 - Lithographischer Apparat - Google Patents

Lithographischer Apparat

Info

Publication number
DE69931690D1
DE69931690D1 DE69931690T DE69931690T DE69931690D1 DE 69931690 D1 DE69931690 D1 DE 69931690D1 DE 69931690 T DE69931690 T DE 69931690T DE 69931690 T DE69931690 T DE 69931690T DE 69931690 D1 DE69931690 D1 DE 69931690D1
Authority
DE
Germany
Prior art keywords
lithographic apparatus
lithographic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69931690T
Other languages
English (en)
Other versions
DE69931690T2 (de
Inventor
Johannes Catharinus Hu Mulkens
Gavin Charles Rider
Cate Jan Wietse Ricolt Ten
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of DE69931690D1 publication Critical patent/DE69931690D1/de
Application granted granted Critical
Publication of DE69931690T2 publication Critical patent/DE69931690T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69931690T 1998-04-08 1999-04-01 Lithographischer Apparat Expired - Fee Related DE69931690T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP98201110 1998-04-08
EP98201110 1998-04-08

Publications (2)

Publication Number Publication Date
DE69931690D1 true DE69931690D1 (de) 2006-07-20
DE69931690T2 DE69931690T2 (de) 2007-06-14

Family

ID=8233575

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69931690T Expired - Fee Related DE69931690T2 (de) 1998-04-08 1999-04-01 Lithographischer Apparat

Country Status (5)

Country Link
US (3) US6452662B2 (de)
JP (1) JP3993335B2 (de)
KR (1) KR100563124B1 (de)
DE (1) DE69931690T2 (de)
TW (1) TW419422B (de)

Families Citing this family (120)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11271619A (ja) * 1998-03-19 1999-10-08 Nikon Corp 照明光学装置および該照明光学装置を備えた露光装置
EP1069600A4 (de) * 1998-03-24 2002-11-20 Nikon Corp Belichtungsvorrichtung und -verfahren, und herstellungsverfahren einer solchen vorrichtung
US6563567B1 (en) * 1998-12-17 2003-05-13 Nikon Corporation Method and apparatus for illuminating a surface using a projection imaging apparatus
JP3959200B2 (ja) * 1999-03-19 2007-08-15 株式会社東芝 半導体装置の製造装置
JP2001174615A (ja) * 1999-04-15 2001-06-29 Nikon Corp 回折光学素子、該素子の製造方法、該素子を備える照明装置、投影露光装置、露光方法、及び光ホモジナイザー、該光ホモジナイザーの製造方法
TW587199B (en) 1999-09-29 2004-05-11 Asml Netherlands Bv Lithographic method and apparatus
TW546550B (en) * 1999-12-13 2003-08-11 Asml Netherlands Bv An illuminator for a lithography apparatus, a lithography apparatus comprising such an illuminator, and a manufacturing method employing such a lithography apparatus
DE10010131A1 (de) * 2000-03-03 2001-09-06 Zeiss Carl Mikrolithographie - Projektionsbelichtung mit tangentialer Polarisartion
JP3413160B2 (ja) * 2000-06-15 2003-06-03 キヤノン株式会社 照明装置及びそれを用いた走査型露光装置
DE60134922D1 (de) * 2000-08-14 2008-09-04 Elith Llc Lithographischer Apparat
JP2002231619A (ja) * 2000-11-29 2002-08-16 Nikon Corp 照明光学装置および該照明光学装置を備えた露光装置
US6859262B2 (en) * 2000-12-06 2005-02-22 Tegal Corporation Redistributing radiation guide
JP2002359176A (ja) * 2001-05-31 2002-12-13 Canon Inc 照明装置、照明制御方法、露光装置、デバイス製造方法及びデバイス
TW554411B (en) * 2001-08-23 2003-09-21 Nikon Corp Exposure apparatus
KR100431883B1 (ko) * 2001-11-05 2004-05-17 삼성전자주식회사 노광방법 및 투영 노광 장치
US6961194B2 (en) * 2001-12-31 2005-11-01 Texas Instruments Incorporated Integrated TIR prism and lens element
US7170587B2 (en) * 2002-03-18 2007-01-30 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7333178B2 (en) * 2002-03-18 2008-02-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US6784976B2 (en) * 2002-04-23 2004-08-31 Asml Holding N.V. System and method for improving line width control in a lithography device using an illumination system having pre-numerical aperture control
EP1357426A3 (de) * 2002-04-23 2005-11-23 Canon Kabushiki Kaisha Methode zum Anordnen von Mustern auf einer Maske sowie zur Bestimmung der Belichtungsparameter
US6888615B2 (en) * 2002-04-23 2005-05-03 Asml Holding N.V. System and method for improving linewidth control in a lithography device by varying the angular distribution of light in an illuminator as a function of field position
US20030225398A1 (en) * 2002-05-28 2003-12-04 Neil Zepkin Zoom device for eye tracker control system and associated methods
SG128443A1 (en) 2002-07-11 2007-01-30 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP2004063988A (ja) * 2002-07-31 2004-02-26 Canon Inc 照明光学系、当該照明光学系を有する露光装置及びデバイス製造方法
JP4332331B2 (ja) * 2002-08-05 2009-09-16 キヤノン株式会社 露光方法
DE10251087A1 (de) * 2002-10-29 2004-05-19 Carl Zeiss Smt Ag Beleuchtungseinrichtung für eine Mikrolithographie-Projektionsbelichtungsanlage
EP1434097A3 (de) * 2002-12-23 2007-05-09 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
EP1434092A1 (de) * 2002-12-23 2004-06-30 ASML Netherlands B.V. Lithographischer Apparat, Verfahren zur Herstellung eines Artikels und damit erzeugter Artikel
US6703625B1 (en) * 2002-12-31 2004-03-09 Intel Corporation Methods and apparatus for off-axis lithographic illumination
US7245356B2 (en) * 2003-02-11 2007-07-17 Asml Netherlands B.V. Lithographic apparatus and method for optimizing illumination using a photolithographic simulation
US7030966B2 (en) * 2003-02-11 2006-04-18 Asml Netherlands B.V. Lithographic apparatus and method for optimizing an illumination source using photolithographic simulations
US7471375B2 (en) * 2003-02-11 2008-12-30 Asml Netherlands B.V. Correction of optical proximity effects by intensity modulation of an illumination arrangement
US6839125B2 (en) * 2003-02-11 2005-01-04 Asml Netherlands B.V. Method for optimizing an illumination source using full resist simulation and process window response metric
US7180576B2 (en) * 2003-02-11 2007-02-20 Asml Netherlands B.V. Exposure with intensity balancing to mimic complex illuminator shape
US6864956B1 (en) 2003-03-19 2005-03-08 Silterra Malaysia Sdn. Bhd. Dual phase grating alignment marks
KR20150036786A (ko) 2003-04-09 2015-04-07 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
US6842223B2 (en) * 2003-04-11 2005-01-11 Nikon Precision Inc. Enhanced illuminator for use in photolithographic systems
US20040207829A1 (en) * 2003-04-17 2004-10-21 Asml Netherlands, B.V. Illuminator controlled tone reversal printing
US7511886B2 (en) * 2003-05-13 2009-03-31 Carl Zeiss Smt Ag Optical beam transformation system and illumination system comprising an optical beam transformation system
DE10322375A1 (de) * 2003-05-13 2004-12-02 Carl Zeiss Smt Ag Polarisationsoptimiertes Axiconsystem und Beleuchtungssystem mit einem solchen Axiconsystem
EP1482363A1 (de) * 2003-05-30 2004-12-01 ASML Netherlands B.V. Lithographischer Apparat
KR100518586B1 (ko) * 2003-07-24 2005-10-04 삼성전자주식회사 회절 광학 소자와 이를 포함하는 조명계 및 이를 이용한반도체 소자 제조방법
KR100530500B1 (ko) 2003-07-31 2005-11-22 삼성전자주식회사 포토리소그래피 공정 모니터링 방법과 장치
TWI569308B (zh) * 2003-10-28 2017-02-01 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造 方法
TWI519819B (zh) 2003-11-20 2016-02-01 尼康股份有限公司 光束變換元件、光學照明裝置、曝光裝置、以及曝光方法
US7542217B2 (en) * 2003-12-19 2009-06-02 Carl Zeiss Smt Ag Beam reshaping unit for an illumination system of a microlithographic projection exposure apparatus
KR101233879B1 (ko) 2004-01-16 2013-02-15 칼 짜이스 에스엠티 게엠베하 편광변조 광학소자
US8270077B2 (en) 2004-01-16 2012-09-18 Carl Zeiss Smt Gmbh Polarization-modulating optical element
US20070019179A1 (en) 2004-01-16 2007-01-25 Damian Fiolka Polarization-modulating optical element
TWI395068B (zh) 2004-01-27 2013-05-01 尼康股份有限公司 光學系統、曝光裝置以及曝光方法
TWI412067B (zh) 2004-02-06 2013-10-11 尼康股份有限公司 偏光變換元件、光學照明裝置、曝光裝置以及曝光方法
JP4497949B2 (ja) * 2004-02-12 2010-07-07 キヤノン株式会社 露光装置
US7046339B2 (en) * 2004-03-05 2006-05-16 Micron Technology, Inc. Optimized optical lithography illumination source for use during the manufacture of a semiconductor device
US20050225740A1 (en) * 2004-03-31 2005-10-13 Padlyar Sushil D Light source for photolithography
US7312850B2 (en) * 2004-04-02 2007-12-25 Asml Netherlands B.V. Lithographic apparatus, illumination system, and optical element for rotating an intensity distribution
WO2005103826A1 (en) * 2004-04-23 2005-11-03 Carl Zeiss Smt Ag Illumination system for a microlithographic projection exposure apparatus
US7324280B2 (en) * 2004-05-25 2008-01-29 Asml Holding N.V. Apparatus for providing a pattern of polarization
US8134687B2 (en) * 2004-08-23 2012-03-13 Carl Zeiss Smt Gmbh Illumination system of a microlithographic exposure apparatus
US7372540B2 (en) * 2004-10-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8043797B2 (en) * 2004-10-12 2011-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7362413B2 (en) * 2004-12-09 2008-04-22 Asml Netherlands B.V. Uniformity correction for lithographic apparatus
US7224440B2 (en) * 2004-12-23 2007-05-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7283205B2 (en) * 2005-01-19 2007-10-16 Micron Technology, Inc. Optimized optical lithography illumination source for use during the manufacture of a semiconductor device
TWI453796B (zh) * 2005-01-21 2014-09-21 尼康股份有限公司 偏光變更單元以及元件製造方法
DE102005003905B4 (de) * 2005-01-27 2007-04-12 Infineon Technologies Ag Anordnung zur Projektion eines Musters in eine Bildebene
US7317506B2 (en) * 2005-03-29 2008-01-08 Asml Netherlands B.V. Variable illumination source
US7548302B2 (en) * 2005-03-29 2009-06-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4425239B2 (ja) * 2005-05-16 2010-03-03 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置およびデバイス製造方法
US7528934B2 (en) * 2005-05-16 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060256311A1 (en) * 2005-05-16 2006-11-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20080059625A (ko) * 2005-10-04 2008-06-30 칼 짜이스 에스엠테 아게 리소그래피 장치 및 제어 방법
JP4957058B2 (ja) * 2006-04-12 2012-06-20 大日本印刷株式会社 回折光学素子、および該素子を備えた露光装置
US8071136B2 (en) * 2006-04-21 2011-12-06 Bioactives, Inc. Water-soluble pharmaceutical compositions of hops resins
JP2007299993A (ja) * 2006-05-01 2007-11-15 Canon Inc 露光装置
JP2008071791A (ja) * 2006-09-12 2008-03-27 Canon Inc 照明光学系、露光装置およびデバイス製造方法
WO2008086827A1 (en) 2007-01-16 2008-07-24 Carl Zeiss Smt Ag Projection exposure method and projection exposure system therefor
TWM324785U (en) * 2007-04-16 2008-01-01 Young Optics Inc Illumination system
US7943273B2 (en) * 2007-04-20 2011-05-17 Photronics, Inc. Photomask with detector for optimizing an integrated circuit production process and method of manufacturing an integrated circuit using the same
US7851110B2 (en) * 2007-04-20 2010-12-14 Photronics, Inc. Secure photomask with blocking aperture
US7790340B2 (en) 2007-04-20 2010-09-07 Photronics, Inc. Photomask with detector for optimizing an integrated circuit production process and method of manufacturing an integrated circuit using the same
US20080285000A1 (en) * 2007-05-17 2008-11-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8715909B2 (en) * 2007-10-05 2014-05-06 Infineon Technologies Ag Lithography systems and methods of manufacturing using thereof
WO2009046920A1 (de) * 2007-10-05 2009-04-16 Limo Patentverwaltung Gmbh & Co. Kg Vorrichtung zur erzeugung einer multipol-beleuchtung in einer arbeitsebene, insbesondere für lithografische anwendungen
US20090091729A1 (en) * 2007-10-05 2009-04-09 Sajan Marokkey Lithography Systems and Methods of Manufacturing Using Thereof
DE102008049365A1 (de) * 2008-09-26 2010-04-01 Carl Zeiss Sms Gmbh Maskeninspektionsmikroskop mit variabler Beleuchtungseinstellung
JP2010134328A (ja) * 2008-12-08 2010-06-17 Disco Abrasive Syst Ltd 偏光素子およびレーザーユニット
US8330938B2 (en) * 2009-02-27 2012-12-11 Corning Incorporated Solid-state array for lithography illumination
KR20100109164A (ko) * 2009-03-31 2010-10-08 삼성전자주식회사 조명 제어 모듈, 그것을 포함하는 회절 조명 시스템 및 포토리소그래피 시스템
JP4952801B2 (ja) * 2010-01-12 2012-06-13 株式会社ニコン 照明光学系、露光装置および露光方法
JP4952800B2 (ja) * 2010-01-12 2012-06-13 株式会社ニコン 照明光学系、露光装置および露光方法
KR20120116329A (ko) 2010-02-20 2012-10-22 가부시키가이샤 니콘 광원 최적화 방법, 노광 방법, 디바이스 제조 방법, 프로그램, 노광 장치, 리소그래피 시스템, 광원 평가 방법 및 광원 변조 방법
JP5338863B2 (ja) * 2011-07-04 2013-11-13 株式会社ニコン 照明光学系、露光装置、露光方法およびデバイス製造方法
JP2012156536A (ja) * 2012-03-28 2012-08-16 Nikon Corp 照明光学装置、露光装置および露光方法
JP5533917B2 (ja) * 2012-03-28 2014-06-25 株式会社ニコン 照明光学系、露光装置およびデバイス製造方法
EP2754524B1 (de) 2013-01-15 2015-11-25 Corning Laser Technologies GmbH Verfahren und Vorrichtung zum laserbasierten Bearbeiten von flächigen Substraten, d.h. Wafer oder Glaselement, unter Verwendung einer Laserstrahlbrennlinie
CN103048894B (zh) * 2013-01-29 2014-10-15 中国科学院光电研究院 一种光刻机投影物镜波像差在线测量装置和方法
US20140240705A1 (en) * 2013-02-27 2014-08-28 Kabushiki Kaisha Toshiba Semiconductor device, reticle method for checking position misalignment and method for manufacturing position misalignment checking mark
EP2781296B1 (de) 2013-03-21 2020-10-21 Corning Laser Technologies GmbH Vorrichtung und verfahren zum ausschneiden von konturen aus flächigen substraten mittels laser
CN103454865A (zh) * 2013-09-05 2013-12-18 中国科学院光电技术研究所 一种深紫外光刻照明系统
JP5644921B2 (ja) * 2013-09-09 2014-12-24 株式会社ニコン 照明光学装置
US9815730B2 (en) 2013-12-17 2017-11-14 Corning Incorporated Processing 3D shaped transparent brittle substrate
US11556039B2 (en) 2013-12-17 2023-01-17 Corning Incorporated Electrochromic coated glass articles and methods for laser processing the same
US9517963B2 (en) 2013-12-17 2016-12-13 Corning Incorporated Method for rapid laser drilling of holes in glass and products made therefrom
JP5761329B2 (ja) * 2013-12-27 2015-08-12 株式会社ニコン 照明光学装置、露光装置および露光方法
EP3166895B1 (de) 2014-07-08 2021-11-24 Corning Incorporated Verfahren und vorrichtung zur laserbearbeitung von materialien
KR20170028943A (ko) 2014-07-14 2017-03-14 코닝 인코포레이티드 조정가능한 레이저 빔 촛점 라인을 사용하여 투명한 재료를 처리하는 방법 및 시스템
WO2016010943A2 (en) 2014-07-14 2016-01-21 Corning Incorporated Method and system for arresting crack propagation
EP3274306B1 (de) 2015-03-24 2021-04-14 Corning Incorporated Laserschneiden und verarbeiten von anzeigeglaszusammensetzungen
JP5928632B2 (ja) * 2015-04-03 2016-06-01 株式会社ニコン 照明光学装置、露光装置および露光方法
US11186060B2 (en) 2015-07-10 2021-11-30 Corning Incorporated Methods of continuous fabrication of holes in flexible substrate sheets and products relating to the same
MY194570A (en) 2016-05-06 2022-12-02 Corning Inc Laser cutting and removal of contoured shapes from transparent substrates
JP7090594B2 (ja) 2016-07-29 2022-06-24 コーニング インコーポレイテッド レーザ加工するための装置および方法
EP3507057A1 (de) 2016-08-30 2019-07-10 Corning Incorporated Laserbearbeitung von transparenten materialien
KR102078294B1 (ko) 2016-09-30 2020-02-17 코닝 인코포레이티드 비-축대칭 빔 스폿을 이용하여 투명 워크피스를 레이저 가공하기 위한 기기 및 방법
WO2018081031A1 (en) 2016-10-24 2018-05-03 Corning Incorporated Substrate processing station for laser-based machining of sheet-like glass substrates
US10752534B2 (en) 2016-11-01 2020-08-25 Corning Incorporated Apparatuses and methods for laser processing laminate workpiece stacks
US10688599B2 (en) 2017-02-09 2020-06-23 Corning Incorporated Apparatus and methods for laser processing transparent workpieces using phase shifted focal lines
US10626040B2 (en) 2017-06-15 2020-04-21 Corning Incorporated Articles capable of individual singulation
CN107247297B (zh) * 2017-06-22 2020-05-12 山东航天电子技术研究所 一种组合式轴棱锥装置
CN114384764B (zh) * 2020-10-20 2023-11-03 上海微电子装备（集团）股份有限公司 曝光系统、光刻机及曝光方法

Family Cites Families (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3639039A (en) 1964-10-22 1972-02-01 Lockheed Aircraft Corp Apparatus utilizing spatial plane filtering for performing optical image enhancement
US3492635A (en) 1966-06-22 1970-01-27 Pan American Petroleum Corp Spatial filtering system wherein different portions of an input object are differenly filtered
US3658420A (en) 1969-12-10 1972-04-25 Bell Telephone Labor Inc Photomask inspection by spatial filtering
US3729252A (en) 1970-06-05 1973-04-24 Eastman Kodak Co Optical spatial filtering with multiple light sources
DE2116713B2 (de) 1971-04-06 1974-03-28 Ibm Deutschland Gmbh, 7000 Stuttgart Belichtungsverfahren zum Abbilden sehr fein strukturierter Lichtmuster auf Photolackschichten und dazu geeignete Belichtungsvorrichtung
US3770340A (en) 1972-08-21 1973-11-06 Technical Operations Inc Coherent optical system with expanded bandwidth and noise suppression
US4241390A (en) * 1978-02-06 1980-12-23 The Perkin-Elmer Corporation System for illuminating an annular field
DE2852203C3 (de) 1978-12-02 1982-03-11 Ibm Deutschland Gmbh, 7000 Stuttgart Lichtleiteinrichtung für eine mit Auflicht betriebene Abbildungsvorrichtung
US4241389A (en) 1979-04-25 1980-12-23 Kasper Instruments, Inc. Multiple apparent source optical imaging system
FR2465241A1 (fr) 1979-09-10 1981-03-20 Thomson Csf Dispositif illuminateur destine a fournir un faisceau d'eclairement a distribution d'intensite ajustable et systeme de transfert de motifs comprenant un tel dispositif
JPS587123A (ja) 1981-07-06 1983-01-14 Olympus Optical Co Ltd 高解像結像光学系
JPS58147708A (ja) 1982-02-26 1983-09-02 Nippon Kogaku Kk <Nikon> 照明用光学装置
JPS59160134A (ja) 1983-03-04 1984-09-10 Canon Inc 照明光学系
US4619508A (en) 1984-04-28 1986-10-28 Nippon Kogaku K. K. Illumination optical arrangement
JPH0682598B2 (ja) 1984-10-11 1994-10-19 日本電信電話株式会社 投影露光装置
US4851882A (en) 1985-12-06 1989-07-25 Canon Kabushiki Kaisha Illumination optical system
US5337097A (en) 1985-12-26 1994-08-09 Nippon Kogaku K.K. Projection optical apparatus
JPH0782981B2 (ja) 1986-02-07 1995-09-06 株式会社ニコン 投影露光方法及び装置
US4814829A (en) 1986-06-12 1989-03-21 Canon Kabushiki Kaisha Projection exposure apparatus
US4841341A (en) 1986-06-13 1989-06-20 Matsushita Electric Industrial Co., Ltd. Integrator for an exposure apparatus or the like
US4939630A (en) 1986-09-09 1990-07-03 Nikon Corporation Illumination optical apparatus
US4854669A (en) 1987-02-27 1989-08-08 Quantum Diagnostics Ltd. Optical image processor with highly selectable modulation transfer function
JP2658051B2 (ja) 1987-05-15 1997-09-30 株式会社ニコン 位置合わせ装置，該装置を用いた投影露光装置及び投影露光方法
JPS6461716A (en) * 1987-08-31 1989-03-08 Canon Kk Illuminator
US4936665A (en) 1987-10-25 1990-06-26 Whitney Theodore R High resolution imagery systems and methods
JP2569711B2 (ja) 1988-04-07 1997-01-08 株式会社ニコン 露光制御装置及び該装置による露光方法
US4947413A (en) 1988-07-26 1990-08-07 At&T Bell Laboratories Resolution doubling lithography technique
JP2699433B2 (ja) 1988-08-12 1998-01-19 株式会社ニコン 投影型露光装置及び投影露光方法
US5191374A (en) 1988-11-17 1993-03-02 Nikon Corporation Exposure control apparatus
US5153773A (en) 1989-06-08 1992-10-06 Canon Kabushiki Kaisha Illumination device including amplitude-division and beam movements
JP2995820B2 (ja) 1990-08-21 1999-12-27 株式会社ニコン 露光方法及び方法，並びにデバイス製造方法
US7656504B1 (en) 1990-08-21 2010-02-02 Nikon Corporation Projection exposure apparatus with luminous flux distribution
US5638211A (en) 1990-08-21 1997-06-10 Nikon Corporation Method and apparatus for increasing the resolution power of projection lithography exposure system
US6252647B1 (en) 1990-11-15 2001-06-26 Nikon Corporation Projection exposure apparatus
US5305054A (en) 1991-02-22 1994-04-19 Canon Kabushiki Kaisha Imaging method for manufacture of microdevices
US5673102A (en) 1991-02-22 1997-09-30 Canon Kabushiki Kaisha Image farming and microdevice manufacturing method and exposure apparatus in which a light source includes four quadrants of predetermined intensity
JP3200894B2 (ja) 1991-03-05 2001-08-20 株式会社日立製作所 露光方法及びその装置
JP2843196B2 (ja) * 1992-03-16 1999-01-06 沖電気工業株式会社 第２高調波発生装置
JP3278896B2 (ja) 1992-03-31 2002-04-30 キヤノン株式会社 照明装置及びそれを用いた投影露光装置
US5659409A (en) * 1992-10-09 1997-08-19 Ag Technology Co., Ltd. Light source apparatus using a cone-like material and an applied apparatus thereof
US5517279A (en) * 1993-08-30 1996-05-14 Hugle; William B. Lens array photolithography
DE69418131D1 (de) * 1993-03-01 1999-06-02 Gen Signal Corp Vorrichtung zur erzeugung einer einstellbaren ringförmigen beleuchtung für einen photolithograpischen projektionsapparat
JP3255312B2 (ja) * 1993-04-28 2002-02-12 株式会社ニコン 投影露光装置
EP0658811B1 (de) * 1993-12-13 1998-06-17 Carl Zeiss Beleuchtungseinrichtung für eine Projektions-Mikrolithographie-Belichtungsanlage
US6285443B1 (en) * 1993-12-13 2001-09-04 Carl-Zeiss-Stiftung Illuminating arrangement for a projection microlithographic apparatus
DE19520563A1 (de) 1995-06-06 1996-12-12 Zeiss Carl Fa Beleuchtungseinrichtung für ein Projektions-Mikrolithographie-Gerät
DE29503859U1 (de) 1994-03-07 1995-05-04 Hyundai Electronics Industries Co., Ltd., Ichon, Kyoungki Vorgefertigte, modifizierte Beleuchtungsvorrichtung zur Herstellung feiner Muster in einer Halbleitervorrichtung
DE4421053A1 (de) * 1994-06-17 1995-12-21 Zeiss Carl Fa Beleuchtungseinrichtung
EP0687956B2 (de) * 1994-06-17 2005-11-23 Carl Zeiss SMT AG Beleuchtungseinrichtung
JPH08316124A (ja) * 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
US5659408A (en) * 1995-05-24 1997-08-19 Polaroid Corporation Reflective image-providing display viewed with holographically diffused ambient light
KR0183727B1 (ko) * 1995-08-07 1999-04-15 김광호 변형 어퍼쳐 및 이를 이용한 투영노광장치
US5712698A (en) 1996-03-04 1998-01-27 Siemens Aktiengesellschaft Independently controllable shutters and variable area apertures for off axis illumination
US5963305A (en) * 1996-09-12 1999-10-05 Canon Kabushiki Kaisha Illumination system and exposure apparatus
US6628370B1 (en) * 1996-11-25 2003-09-30 Mccullough Andrew W. Illumination system with spatially controllable partial coherence compensating for line width variances in a photolithographic system
US5896188A (en) * 1996-11-25 1999-04-20 Svg Lithography Systems, Inc. Reduction of pattern noise in scanning lithographic system illuminators
JP4310816B2 (ja) * 1997-03-14 2009-08-12 株式会社ニコン 照明装置、投影露光装置、デバイスの製造方法、及び投影露光装置の調整方法
JP3005203B2 (ja) * 1997-03-24 2000-01-31 キヤノン株式会社 照明装置、露光装置及びデバイス製造方法
JP3264224B2 (ja) * 1997-08-04 2002-03-11 キヤノン株式会社 照明装置及びそれを用いた投影露光装置

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US6452662B2 (en) 2002-09-17
US20020167653A1 (en) 2002-11-14
US7061583B2 (en) 2006-06-13
JP3993335B2 (ja) 2007-10-17
US20010046038A1 (en) 2001-11-29
KR19990082951A (ko) 1999-11-25
TW419422B (en) 2001-01-21
JP2000058441A (ja) 2000-02-25
KR100563124B1 (ko) 2006-03-21
US20040051858A1 (en) 2004-03-18

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