DE69712637D1 - Schleifmittel - Google Patents
SchleifmittelInfo
- Publication number
- DE69712637D1 DE69712637D1 DE69712637T DE69712637T DE69712637D1 DE 69712637 D1 DE69712637 D1 DE 69712637D1 DE 69712637 T DE69712637 T DE 69712637T DE 69712637 T DE69712637 T DE 69712637T DE 69712637 D1 DE69712637 D1 DE 69712637D1
- Authority
- DE
- Germany
- Prior art keywords
- abrasive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
- C01F17/224—Oxides or hydroxides of lanthanides
- C01F17/235—Cerium oxides or hydroxides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/76—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by a space-group or by other symmetry indications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20005696 | 1996-07-30 | ||
JP20345096 | 1996-08-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69712637D1 true DE69712637D1 (de) | 2002-06-20 |
DE69712637T2 DE69712637T2 (de) | 2003-01-30 |
Family
ID=26511940
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69703957T Expired - Lifetime DE69703957T2 (de) | 1996-07-30 | 1997-07-30 | Verfahren zur Herstellung von kristallinen Ceroxidteilchen. |
DE69712637T Expired - Fee Related DE69712637T2 (de) | 1996-07-30 | 1997-07-30 | Schleifmittel |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69703957T Expired - Lifetime DE69703957T2 (de) | 1996-07-30 | 1997-07-30 | Verfahren zur Herstellung von kristallinen Ceroxidteilchen. |
Country Status (3)
Country | Link |
---|---|
US (2) | US5962343A (de) |
EP (2) | EP0947469B1 (de) |
DE (2) | DE69703957T2 (de) |
Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6420269B2 (en) * | 1996-02-07 | 2002-07-16 | Hitachi Chemical Company, Ltd. | Cerium oxide abrasive for polishing insulating films formed on substrate and methods for using the same |
US5962343A (en) * | 1996-07-30 | 1999-10-05 | Nissan Chemical Industries, Ltd. | Process for producing crystalline ceric oxide particles and abrasive |
US6692660B2 (en) * | 2001-04-26 | 2004-02-17 | Nanogram Corporation | High luminescence phosphor particles and related particle compositions |
US6046112A (en) * | 1998-12-14 | 2000-04-04 | Taiwan Semiconductor Manufacturing Company | Chemical mechanical polishing slurry |
GB9903519D0 (en) * | 1999-02-16 | 1999-04-07 | Europ Economic Community | Precipitation process |
US6752844B2 (en) * | 1999-03-29 | 2004-06-22 | Intel Corporation | Ceric-ion slurry for use in chemical-mechanical polishing |
WO2001000744A1 (fr) | 1999-06-28 | 2001-01-04 | Nissan Chemical Industries, Ltd. | Compose abrasif pour plateau en verre de disque dur |
FR2801298B1 (fr) * | 1999-11-19 | 2002-05-03 | Rhodia Terres Rares | Dispersion colloidale d'un compose de cerium et contenant du cerium iii, procede de preparation et utilisation |
JP2001267273A (ja) * | 2000-01-11 | 2001-09-28 | Sumitomo Chem Co Ltd | 金属用研磨材、研磨組成物及び研磨方法 |
AU2001253308A1 (en) * | 2000-04-11 | 2001-10-23 | Cabot Microelectronics Corporation | System for the preferential removal of silicon oxide |
EP1243633A4 (de) * | 2000-10-02 | 2009-05-27 | Mitsui Mining & Smelting Co | Ceriumhaltiges schleifmittel und verfahren zur herstellung desselben |
US7887714B2 (en) * | 2000-12-25 | 2011-02-15 | Nissan Chemical Industries, Ltd. | Cerium oxide sol and abrasive |
CN1290162C (zh) * | 2001-02-20 | 2006-12-13 | 日立化成工业株式会社 | 抛光剂及基片的抛光方法 |
TWI272249B (en) * | 2001-02-27 | 2007-02-01 | Nissan Chemical Ind Ltd | Crystalline ceric oxide sol and process for producing the same |
US20040198191A1 (en) * | 2001-11-16 | 2004-10-07 | Naoki Bessho | Cerium-based polish and cerium-based polish slurry |
US7666239B2 (en) * | 2001-11-16 | 2010-02-23 | Ferro Corporation | Hydrothermal synthesis of cerium-titanium oxide for use in CMP |
WO2003044123A1 (en) * | 2001-11-16 | 2003-05-30 | Ferro Corporation | Particles for use in cmp slurries and method for producing them |
US6596042B1 (en) | 2001-11-16 | 2003-07-22 | Ferro Corporation | Method of forming particles for use in chemical-mechanical polishing slurries and the particles formed by the process |
US20060032836A1 (en) * | 2001-11-16 | 2006-02-16 | Ferro Corporation | Methods of controlling the properties of abrasive particles for use in chemical-mechanical polishing slurries |
AU2002365979A1 (en) | 2001-11-20 | 2003-06-10 | Rensselaer Polytechnic Institute | Method for polishing a substrate surface |
KR100444307B1 (ko) * | 2001-12-28 | 2004-08-16 | 주식회사 하이닉스반도체 | 반도체소자의 금속배선 콘택플러그 형성방법 |
KR100477939B1 (ko) * | 2002-04-15 | 2005-03-18 | 주식회사 엘지화학 | 단결정 산화세륨 분말의 제조방법 |
US7025943B2 (en) * | 2002-05-15 | 2006-04-11 | The Curators Of The University Of Missouri | Method for preparation of nanometer cerium-based oxide particles |
US6729935B2 (en) * | 2002-06-13 | 2004-05-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for in-situ monitoring of mixing ratio of high selectivity slurry |
WO2004023539A1 (ja) * | 2002-09-06 | 2004-03-18 | Asahi Glass Company, Limited | 半導体集積回路用絶縁膜研磨剤組成物および半導体集積回路の製造方法 |
US6863825B2 (en) * | 2003-01-29 | 2005-03-08 | Union Oil Company Of California | Process for removing arsenic from aqueous streams |
KR100511943B1 (ko) * | 2003-05-22 | 2005-09-01 | 한화석유화학 주식회사 | 화학·기계 연마용 산화세륨 초미립자 농축액 및 이의제조방법 |
TWI278507B (en) * | 2003-05-28 | 2007-04-11 | Hitachi Chemical Co Ltd | Polishing agent and polishing method |
US20050108947A1 (en) * | 2003-11-26 | 2005-05-26 | Mueller Brian L. | Compositions and methods for chemical mechanical polishing silica and silicon nitride |
FR2872716B1 (fr) * | 2004-07-06 | 2006-11-03 | Altreg Sarl | Produit de stockage reversible de dihydrogene, procede de fabrication d'un tel produit, et utilisation d'un tel produit pour le stockage reversible de dihydrogene |
CN101031512B (zh) * | 2004-08-17 | 2010-12-01 | 日产化学工业株式会社 | 金属氧化物溶胶的制造方法 |
EP1818312A4 (de) * | 2004-11-08 | 2010-09-08 | Asahi Glass Co Ltd | Verfahren zur herstellung von feinen ceo2-teilchen und poliersuspension, die derartige feine teilchen enthält |
KR101134590B1 (ko) * | 2005-03-28 | 2012-04-09 | 삼성코닝정밀소재 주식회사 | 분산 안정성이 우수한 연마 슬러리의 제조방법 |
KR100812052B1 (ko) * | 2005-11-14 | 2008-03-10 | 주식회사 엘지화학 | 탄산세륨 분말, 산화세륨 분말, 그 제조방법, 및 이를포함하는 cmp 슬러리 |
FR2906800B1 (fr) * | 2006-10-09 | 2008-11-28 | Rhodia Recherches & Tech | Suspension liquide et poudre de particules d'oxyde de cerium, procedes de preparation de celles-ci et utilisation dans le polissage |
EP2105467B1 (de) * | 2006-12-28 | 2012-02-22 | Dow Corning Toray Co., Ltd. | Wärmehärtende silikonkautschukzusammensetzung |
US8066874B2 (en) | 2006-12-28 | 2011-11-29 | Molycorp Minerals, Llc | Apparatus for treating a flow of an aqueous solution containing arsenic |
US8349764B2 (en) | 2007-10-31 | 2013-01-08 | Molycorp Minerals, Llc | Composition for treating a fluid |
US8252087B2 (en) | 2007-10-31 | 2012-08-28 | Molycorp Minerals, Llc | Process and apparatus for treating a gas containing a contaminant |
WO2009062516A2 (en) * | 2007-11-16 | 2009-05-22 | Scf Technologies A/S | Photocatalytic boards or panels and a method of manufacturing thereof |
KR100873945B1 (ko) * | 2008-07-16 | 2008-12-12 | (주) 뉴웰 | 미세 산화세륨 분말 그 제조 방법 및 이를 포함하는 씨엠피슬러리 |
DK2411141T3 (da) | 2009-03-23 | 2014-03-31 | Vaelinge Photocatalytic Ab | Frembringelse af kolloide titandioxidnanopartikelopslæm-ninger med opretholdt krystallinitet ved anvendelse af en perlemølle med perler i mikrometerstørrelse |
US9233863B2 (en) | 2011-04-13 | 2016-01-12 | Molycorp Minerals, Llc | Rare earth removal of hydrated and hydroxyl species |
RU2607558C2 (ru) | 2011-07-05 | 2017-01-10 | Велинге Фотокаталитик Аб | Изделия из древесины с покрытием и способ получения изделий из древесины с покрытием |
KR20140140583A (ko) | 2012-03-20 | 2014-12-09 | 뵈린게 포토캐털리틱 아베 | 이산화티탄 및 광회색화 방지 첨가제를 포함하는 광촉매 조성물 |
US9375750B2 (en) | 2012-12-21 | 2016-06-28 | Valinge Photocatalytic Ab | Method for coating a building panel and a building panel |
EP3539793A1 (de) | 2013-09-25 | 2019-09-18 | Välinge Photocatalytic AB | Verfahren zum aufbringen einer photokatalytischen dispersion |
MX370462B (es) | 2014-03-07 | 2019-12-13 | Secure Natural Resources Llc | Oxido de cerio (iv) con propiedades de remocion de arsenico excepcionales. |
KR20170044522A (ko) | 2015-10-15 | 2017-04-25 | 삼성전자주식회사 | 화학적 기계적 연마용 슬러리 조성물, 그의 제조 방법, 그를 이용한 연마 방법 |
JP7220114B2 (ja) * | 2019-04-01 | 2023-02-09 | 山口精研工業株式会社 | 窒化アルミニウム基板用研磨剤組成物および窒化アルミニウム基板の研磨方法 |
KR102484632B1 (ko) * | 2020-08-31 | 2023-01-04 | 솔브레인 주식회사 | 산화 세륨 입자, 이를 포함하는 화학적 기계적 연마 슬러리 조성물 및 반도체 소자의 제조 방법 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE145853C (de) * | ||||
US3713796A (en) * | 1969-01-02 | 1973-01-30 | Eastman Kodak Co | Lens polishing composition containing diamonds in an epoxide resin matrix |
US3710517A (en) * | 1971-02-22 | 1973-01-16 | Eastman Kodak Co | Process for finish polishing of glass lenses |
AT339253B (de) * | 1975-07-25 | 1977-10-10 | Treibacher Chemische Werke Ag | Verfahren zur herstellung eines reinen ceroxids |
DE2857146T1 (de) * | 1977-11-01 | 1980-12-04 | Atomic Energy Authority Uk | Production of dispersions |
GB2075478B (en) * | 1980-05-09 | 1983-10-12 | Atomic Energy Authority Uk | Improvements in or relating to cerium compounds |
GB2102780B (en) * | 1981-08-07 | 1985-04-03 | Atomic Energy Authority Uk | Improvements in or relating to compounds |
EP0078098B1 (de) * | 1981-08-07 | 1986-05-14 | United Kingdom Atomic Energy Authority | Cerium-Verbindungen |
US4647401A (en) * | 1983-01-24 | 1987-03-03 | Rhone Poulenc Inc. | Process for preparing colloidal ceric oxide and complexes thereof with free organic acids |
FR2545830B1 (fr) * | 1983-05-13 | 1986-01-03 | Rhone Poulenc Spec Chim | Nouvelle composition de polissage a base de cerium et son procede de fabrication |
JPS6013847A (ja) * | 1983-07-04 | 1985-01-24 | Shin Etsu Chem Co Ltd | 放射線硬化性オルガノポリシロキサン組成物 |
US4475981A (en) * | 1983-10-28 | 1984-10-09 | Ampex Corporation | Metal polishing composition and process |
FR2583034A1 (fr) * | 1985-06-10 | 1986-12-12 | Rhone Poulenc Spec Chim | Nouvel oxyde cerique, son procede de fabrication et ses applications |
FR2593195B1 (fr) * | 1986-01-22 | 1988-08-12 | Centre Nat Rech Scient | Nouvelles compositions particulaires d'oxyde de terre rare, leur preparation et leur application |
FR2604443A1 (fr) * | 1986-09-26 | 1988-04-01 | Rhone Poulenc Chimie | Composition de polissage a base de cerium destinee au polissage des verres organiques |
FR2624519A1 (fr) * | 1987-12-09 | 1989-06-16 | Rhone Poulenc Chimie | Composition de polissage perfectionnee a base de cerium et son procede de preparation |
FR2669028B1 (fr) * | 1990-11-13 | 1992-12-31 | Rhone Poulenc Chimie | Procede de fabrication d'oxalates doubles de terres rares et d'ammonium et leurs utilisations pour la fabrication d'oxydes de terres rares. |
JPH062582A (ja) * | 1992-04-15 | 1994-01-11 | Nippondenso Co Ltd | 内燃機関の燃料噴射装置 |
JP3335667B2 (ja) * | 1992-05-26 | 2002-10-21 | 株式会社東芝 | 半導体装置の製造方法 |
US5389352A (en) * | 1993-07-21 | 1995-02-14 | Rodel, Inc. | Oxide particles and method for producing them |
JP3098661B2 (ja) * | 1993-07-28 | 2000-10-16 | キヤノン株式会社 | 研磨剤組成物及びそれを用いる研磨方法 |
JP3440505B2 (ja) * | 1993-09-14 | 2003-08-25 | 昭和電工株式会社 | 酸化第二セリウムの製造方法 |
JPH081218A (ja) | 1994-06-16 | 1996-01-09 | Nisshin Steel Co Ltd | 金属帯の焼鈍、脱スケール、圧延操業方法 |
JPH083541A (ja) * | 1994-06-17 | 1996-01-09 | Taki Chem Co Ltd | 精密研磨剤 |
TW311905B (de) * | 1994-07-11 | 1997-08-01 | Nissan Chemical Ind Ltd | |
JP3837754B2 (ja) * | 1994-07-11 | 2006-10-25 | 日産化学工業株式会社 | 結晶性酸化第二セリウムの製造方法 |
US5542126A (en) * | 1994-11-08 | 1996-08-06 | Harvanek; Daniel | Instructional hand glove |
FR2727328A1 (fr) * | 1994-11-25 | 1996-05-31 | Rhone Poulenc Chimie | Procede d'oxydation ou de thermohydrolyse d'un element chimique par chauffage par micro-ondes |
JP2746861B2 (ja) * | 1995-11-20 | 1998-05-06 | 三井金属鉱業株式会社 | 酸化セリウム超微粒子の製造方法 |
US5962343A (en) * | 1996-07-30 | 1999-10-05 | Nissan Chemical Industries, Ltd. | Process for producing crystalline ceric oxide particles and abrasive |
-
1997
- 1997-07-24 US US08/899,796 patent/US5962343A/en not_active Expired - Lifetime
- 1997-07-30 EP EP99113404A patent/EP0947469B1/de not_active Expired - Lifetime
- 1997-07-30 DE DE69703957T patent/DE69703957T2/de not_active Expired - Lifetime
- 1997-07-30 EP EP97810545A patent/EP0822164B1/de not_active Expired - Lifetime
- 1997-07-30 DE DE69712637T patent/DE69712637T2/de not_active Expired - Fee Related
-
1999
- 1999-07-09 US US09/350,147 patent/US6372003B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0947469A3 (de) | 2000-01-12 |
DE69712637T2 (de) | 2003-01-30 |
EP0822164B1 (de) | 2001-01-24 |
DE69703957D1 (de) | 2001-03-01 |
EP0822164A2 (de) | 1998-02-04 |
US6372003B1 (en) | 2002-04-16 |
US5962343A (en) | 1999-10-05 |
EP0947469B1 (de) | 2002-05-15 |
EP0947469A2 (de) | 1999-10-06 |
EP0822164A3 (de) | 1998-08-26 |
DE69703957T2 (de) | 2001-08-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |