DE69710093T2 - Versetzter zielleitungsbetrieb in einem einzigen ras-zyklus - Google Patents

Versetzter zielleitungsbetrieb in einem einzigen ras-zyklus

Info

Publication number
DE69710093T2
DE69710093T2 DE69710093T DE69710093T DE69710093T2 DE 69710093 T2 DE69710093 T2 DE 69710093T2 DE 69710093 T DE69710093 T DE 69710093T DE 69710093 T DE69710093 T DE 69710093T DE 69710093 T2 DE69710093 T2 DE 69710093T2
Authority
DE
Germany
Prior art keywords
row
signals
address
decode
activated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69710093T
Other languages
English (en)
Other versions
DE69710093D1 (de
Inventor
P Rupp
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of DE69710093D1 publication Critical patent/DE69710093D1/de
Application granted granted Critical
Publication of DE69710093T2 publication Critical patent/DE69710093T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/30—Accessing single arrays
    • G11C29/34—Accessing multiple bits simultaneously
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/04—Arrangements for selecting an address in a digital store using a sequential addressing device, e.g. shift register, counter
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Steroid Compounds (AREA)
  • Optical Recording Or Reproduction (AREA)
  • Inert Electrodes (AREA)
  • Inorganic Insulating Materials (AREA)
DE69710093T 1996-11-04 1997-10-31 Versetzter zielleitungsbetrieb in einem einzigen ras-zyklus Expired - Lifetime DE69710093T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/743,476 US5691951A (en) 1996-11-04 1996-11-04 Staggered row line firing in single ras cycle
PCT/US1997/019967 WO1998020495A1 (en) 1996-11-04 1997-10-31 Staggered row line firing in a single ras cycle

Publications (2)

Publication Number Publication Date
DE69710093D1 DE69710093D1 (de) 2002-03-14
DE69710093T2 true DE69710093T2 (de) 2002-07-18

Family

ID=24988927

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69710093T Expired - Lifetime DE69710093T2 (de) 1996-11-04 1997-10-31 Versetzter zielleitungsbetrieb in einem einzigen ras-zyklus

Country Status (8)

Country Link
US (1) US5691951A (de)
EP (1) EP0935802B1 (de)
JP (1) JP3271175B2 (de)
KR (1) KR100298821B1 (de)
AT (1) ATE212469T1 (de)
AU (1) AU5102798A (de)
DE (1) DE69710093T2 (de)
WO (1) WO1998020495A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6477082B2 (en) 2000-12-29 2002-11-05 Micron Technology, Inc. Burst access memory with zero wait states
US6556503B2 (en) 2001-08-21 2003-04-29 Micron Technology, Inc. Methods and apparatus for reducing decoder area
KR100927395B1 (ko) * 2003-04-29 2009-11-19 주식회사 하이닉스반도체 데이터 인 스트로브 신호 발생 장치

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4885720A (en) * 1988-04-01 1989-12-05 International Business Machines Corporation Memory device and method implementing wordline redundancy without an access time penalty
JP2601931B2 (ja) * 1990-04-06 1997-04-23 株式会社東芝 半導体不揮発性メモリ装置
US5291443A (en) * 1991-06-26 1994-03-01 Micron Technology, Inc. Simultaneous read and refresh of different rows in a dram
US5274591A (en) * 1992-08-13 1993-12-28 Micron Technology, Inc. Serial clock noise immunity in a semiconductor memory integrated circuit having a serial port
US5297087A (en) * 1993-04-29 1994-03-22 Micron Semiconductor, Inc. Methods and devices for accelerating failure of marginally defective dielectric layers
JP3130705B2 (ja) * 1993-06-25 2001-01-31 株式会社東芝 半導体メモリ回路
US5381368A (en) * 1993-12-10 1995-01-10 Micron Semiconductor, Inc. Hardware implemented row copy enable mode for DRAMS to create repetitive backgrounds for video images or DRAM testing
DE69516768T2 (de) * 1994-03-09 2000-11-23 Koninkl Philips Electronics Nv Prüfbarer i ddq- speicher durch kumulative wort-zeilen-aktivierung
US5440517A (en) * 1994-08-15 1995-08-08 Micron Technology, Inc. DRAMs having on-chip row copy circuits for use in testing and video imaging and method for operating same
US5469384A (en) * 1994-09-27 1995-11-21 Cypress Semiconductor Corp. Decoding scheme for reliable multi bit hot electron programming
US5625790A (en) * 1995-09-14 1997-04-29 Micron Technology, Inc. Method and apparatus for reducing the access time of a memory device by decoding a row address during a precharge period of the memory device

Also Published As

Publication number Publication date
WO1998020495A1 (en) 1998-05-14
EP0935802A1 (de) 1999-08-18
JP3271175B2 (ja) 2002-04-02
AU5102798A (en) 1998-05-29
EP0935802B1 (de) 2002-01-23
KR100298821B1 (ko) 2001-09-29
ATE212469T1 (de) 2002-02-15
US5691951A (en) 1997-11-25
DE69710093D1 (de) 2002-03-14
KR20000053023A (ko) 2000-08-25
JP2000504459A (ja) 2000-04-11

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Legal Events

Date Code Title Description
8328 Change in the person/name/address of the agent

Representative=s name: ANWALTSKANZLEI GULDE HENGELHAUPT ZIEBIG & SCHNEIDE