DE69707559D1 - Draht aus Goldlegierung und Herstellungsverfahren eines Höckers - Google Patents

Draht aus Goldlegierung und Herstellungsverfahren eines Höckers

Info

Publication number
DE69707559D1
DE69707559D1 DE69707559T DE69707559T DE69707559D1 DE 69707559 D1 DE69707559 D1 DE 69707559D1 DE 69707559 T DE69707559 T DE 69707559T DE 69707559 T DE69707559 T DE 69707559T DE 69707559 D1 DE69707559 D1 DE 69707559D1
Authority
DE
Germany
Prior art keywords
manufacturing process
alloy wire
gold alloy
bump manufacturing
bump
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69707559T
Other languages
English (en)
Other versions
DE69707559T2 (de
Inventor
Akimoto Hideyuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Publication of DE69707559D1 publication Critical patent/DE69707559D1/de
Application granted granted Critical
Publication of DE69707559T2 publication Critical patent/DE69707559T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004Wire welding
    • B23K20/005Capillary welding
    • B23K20/007Ball bonding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/30Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3013Au as the principal constituent
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C5/00Alloys based on noble metals
    • C22C5/02Alloys based on gold
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/60Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/43Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624Aluminium [Al] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45015Cross-sectional shape being circular
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48599Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009Pre-treatment of the connector or the bonding area
    • H01L2224/8503Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512Aligning
    • H01L2224/85148Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518Translational movements
    • H01L2224/85181Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85203Thermocompression bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01023Vanadium [V]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01027Cobalt [Co]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01039Yttrium [Y]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01057Lanthanum [La]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01083Bismuth [Bi]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012Semiconductor purity grades
    • H01L2924/012044N purity grades, i.e. 99.99%
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012Semiconductor purity grades
    • H01L2924/012055N purity grades, i.e. 99.999%
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01327Intermediate phases, i.e. intermetallics compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/207Diameter ranges
    • H01L2924/20752Diameter ranges larger or equal to 20 microns less than 30 microns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/207Diameter ranges
    • H01L2924/20753Diameter ranges larger or equal to 30 microns less than 40 microns

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
DE69707559T 1996-05-28 1997-05-28 Draht aus Goldlegierung und Herstellungsverfahren eines Höckers Expired - Lifetime DE69707559T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13354696A JP3328135B2 (ja) 1996-05-28 1996-05-28 バンプ形成用金合金線及びバンプ形成方法

Publications (2)

Publication Number Publication Date
DE69707559D1 true DE69707559D1 (de) 2001-11-29
DE69707559T2 DE69707559T2 (de) 2002-05-16

Family

ID=15107346

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69707559T Expired - Lifetime DE69707559T2 (de) 1996-05-28 1997-05-28 Draht aus Goldlegierung und Herstellungsverfahren eines Höckers

Country Status (8)

Country Link
US (2) US6159420A (de)
EP (1) EP0810293B1 (de)
JP (1) JP3328135B2 (de)
KR (1) KR100275001B1 (de)
CN (1) CN1065001C (de)
DE (1) DE69707559T2 (de)
MY (1) MY120121A (de)
TW (1) TW327697B (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19809081A1 (de) 1998-03-04 1999-09-16 Bosch Gmbh Robert Verfahren und Kontaktstelle zur Herstellung einer elektrischen Verbindung
JP3382918B2 (ja) 2000-05-31 2003-03-04 田中電子工業株式会社 半導体素子接続用金線
US6523255B2 (en) * 2001-06-21 2003-02-25 International Business Machines Corporation Process and structure to repair damaged probes mounted on a space transformer
US6500760B1 (en) 2001-08-02 2002-12-31 Sandia Corporation Gold-based electrical interconnections for microelectronic devices
US6858943B1 (en) 2003-03-25 2005-02-22 Sandia Corporation Release resistant electrical interconnections for MEMS devices
EP1811555A4 (de) * 2004-09-30 2012-06-20 Tanaka Electronics Ind Au-legierungs-bonddraht
MY139238A (en) * 2004-09-30 2009-09-30 Tanaka Electronics Ind Wire bumping material
KR100929432B1 (ko) * 2004-11-26 2009-12-03 타나카 덴시 코오교오 카부시키가이샤 반도체 소자용 Au 본딩 와이어
US7595560B2 (en) * 2005-02-22 2009-09-29 Nec Electronics Corporation Semiconductor device
US8193034B2 (en) 2006-11-10 2012-06-05 Stats Chippac, Ltd. Semiconductor device and method of forming vertical interconnect structure using stud bumps
US8133762B2 (en) 2009-03-17 2012-03-13 Stats Chippac, Ltd. Semiconductor device and method of providing z-interconnect conductive pillars with inner polymer core
US8174119B2 (en) * 2006-11-10 2012-05-08 Stats Chippac, Ltd. Semiconductor package with embedded die
JP4195495B1 (ja) * 2007-11-06 2008-12-10 田中電子工業株式会社 ボールボンディング用金合金線
JP2010123817A (ja) * 2008-11-21 2010-06-03 Fujitsu Ltd ワイヤボンディング方法および電子装置とその製造方法
US8540136B1 (en) 2012-09-06 2013-09-24 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for stud bump formation and apparatus for performing the same
CN116329830B (zh) * 2023-05-29 2023-08-29 宁波尚进自动化科技有限公司 芯片引脚的焊接方法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5649535A (en) * 1979-09-28 1981-05-06 Tanaka Kikinzoku Kogyo Kk Bonding wire for semiconductor device
US4330329A (en) * 1979-11-28 1982-05-18 Tanaka Denshi Kogyo Kabushiki Kaisha Gold bonding wire for semiconductor elements and the semiconductor element
GB2116208B (en) * 1981-12-04 1985-12-04 Mitsubishi Metal Corp Fine gold alloy wire for bonding of a semiconductor device
US4702302A (en) * 1983-02-23 1987-10-27 Sumitomo Electric Industries Ltd. Method of making thin alloy wire
JPS6152961A (ja) * 1984-08-22 1986-03-15 Sumitomo Electric Ind Ltd 金合金線の製造方法
JPS59208751A (ja) * 1983-05-13 1984-11-27 Hitachi Ltd バンプ形成方法
US5917707A (en) * 1993-11-16 1999-06-29 Formfactor, Inc. Flexible contact structure with an electrically conductive shell
US5476211A (en) * 1993-11-16 1995-12-19 Form Factor, Inc. Method of manufacturing electrical contacts, using a sacrificial member
JPS62152143A (ja) * 1985-12-26 1987-07-07 Toshiba Corp バンプ形成方法
JPS63145729A (ja) * 1986-03-28 1988-06-17 Nittetsu Micro Metal:Kk 半導体素子ボンデイング用金線
JP2737953B2 (ja) * 1988-09-29 1998-04-08 三菱マテリアル株式会社 金バンプ用金合金細線
JPH02152143A (ja) 1988-12-02 1990-06-12 Toshiba Corp X線イメージ管及びその製造方法
KR920010119B1 (ko) * 1989-04-28 1992-11-16 다나카 덴시 고오교오 가부시기가이샤 반도체 소자의 본딩(bonding)용 금선
US5139883A (en) * 1989-05-09 1992-08-18 Grigory Raykhtsaum Intermetallic time-temperature integration fuse
JPH03145729A (ja) 1989-10-31 1991-06-20 Sony Corp 半導体装置の製造方法
JPH082623B2 (ja) 1990-08-23 1996-01-17 ソマール株式会社 超高分子量ポリエチレン複合シート及びその製造方法
JP3145729B2 (ja) 1991-05-28 2001-03-12 チノン株式会社 多点測距装置
JPH06112251A (ja) * 1992-09-30 1994-04-22 Tanaka Denshi Kogyo Kk 半導体素子用ボンディング線
JP3090549B2 (ja) * 1992-09-30 2000-09-25 田中電子工業株式会社 半導体素子用ボンディング線
JP3064692B2 (ja) * 1992-09-30 2000-07-12 田中電子工業株式会社 半導体素子用ボンディング線
JP2780611B2 (ja) * 1993-09-06 1998-07-30 三菱マテリアル株式会社 少量成分の合金化で硬質化した金装飾品材
JP3221179B2 (ja) * 1993-09-06 2001-10-22 三菱マテリアル株式会社 硬さ安定性のすぐれた金装飾品用高硬度伸線加工ワイヤー材
US5832601A (en) * 1993-11-16 1998-11-10 Form Factor, Inc. Method of making temporary connections between electronic components
JP3085090B2 (ja) * 1994-06-07 2000-09-04 住友金属鉱山株式会社 ボンディングワイヤ
JPH08109424A (ja) * 1994-08-18 1996-04-30 Tanaka Denshi Kogyo Kk ボンディング用金線
JPH08127828A (ja) * 1994-10-28 1996-05-21 Tanaka Denshi Kogyo Kk ボンディング用金線
JPH08193233A (ja) * 1995-01-12 1996-07-30 Mitsubishi Materials Corp 半導体装置用金合金細線
JPH08325657A (ja) * 1995-05-26 1996-12-10 Tanaka Denshi Kogyo Kk ボンディング用金線
JP3585993B2 (ja) * 1995-05-26 2004-11-10 田中電子工業株式会社 ボンディング用金線
JP3367544B2 (ja) * 1995-08-23 2003-01-14 田中電子工業株式会社 ボンディング用金合金細線及びその製造方法
JP3222054B2 (ja) 1996-02-06 2001-10-22 信越化学工業株式会社 ゴム組成物

Also Published As

Publication number Publication date
EP0810293A1 (de) 1997-12-03
US6213382B1 (en) 2001-04-10
KR100275001B1 (ko) 2001-01-15
CN1065001C (zh) 2001-04-25
JPH09321076A (ja) 1997-12-12
CN1173546A (zh) 1998-02-18
EP0810293B1 (de) 2001-10-24
JP3328135B2 (ja) 2002-09-24
MY120121A (en) 2005-09-30
TW327697B (en) 1998-03-01
US6159420A (en) 2000-12-12
KR970077400A (ko) 1997-12-12
DE69707559T2 (de) 2002-05-16

Similar Documents

Publication Publication Date Title
DE69707559D1 (de) Draht aus Goldlegierung und Herstellungsverfahren eines Höckers
DE69637333D1 (de) Kupferlegierungen für Chipverbindungen und Herstellungsverfahren
DE69818908D1 (de) Verbindungsstruktur zwischen einem Draht und einem Anschlussklemme, Verbindugsverfahren dafür und eine Anschlussklemme
DE69430744D1 (de) Verbesserte Neuronalhalbleiterchipsarchitekturen und Neuronalnetzwerke darin
KR960015826A (ko) 캐필러리를 사용한 와이어 본딩 방법 및 장치
DE69032879D1 (de) Verbindungsverfahren für Halbleiterpackung und Verbindungsdrähte für Halbleiterpackung
DE69435294D1 (de) Passivierungsverfahren für eine integrierte schaltung
DE69840121D1 (de) Mehrschichtisolierter draht und seine anwendung in einem transformator
DE69832249D1 (de) Chip-induktivität und sein herstellungsverfahren
DE69708545D1 (de) Verwendung eines Drahts aus Goldleriung zum Wedgebonding
DE59500534D1 (de) Sinterreibwerkstoff für reibschlüssige elemente sowie reibschlüssiges element
DE59708702D1 (de) Amorphe legierung und lötmittel aus amorpher legierung
DE69613291D1 (de) Dünner Golddraht zum Bonden
DE69601767D1 (de) Legierung bestehend aus Wolfram-Lanthana in der Form eines Drahtes für vibrationsbeständigen Glühlampenfaden
EP0743679A3 (de) Golddraht zum Bonden von Chips
FI960630A0 (fi) Erittäin luja juotoslejeerinki
DE69937628D1 (de) Herstellungsverfahren von aluminium-stabilisiertem supraleitendem draht
TR24941A (tr) METAL TEL BOBINI YAPMA YÖNTEMI VE DüZENEGI
DE60104920D1 (de) Draht von weichmagnetischer Legierung, Herstellungsverfahren und Marker
DE69615874D1 (de) Invarlegierungsdraht und Herstellungsverfahren
IT1279993B1 (it) Metodo e macchina per la realizzazione contemporanea di piu' bachi di sigaretta
DE69509360D1 (de) Polyetherglyole und alkohole aus 3,4-epoxy-1-ruten
DE59404640D1 (de) Hochgoldhaltige Dentallegierung
GB9902861D0 (en) Compact assembly configuration and process for reducing lead wire connections and solder joints
DE69808433D1 (de) Korrosionsbeständige legierung, herstellungsverfahren und gegenstände aus dieser legierung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition