DE69630328D1 - Präziser kontrollierter Niederschlag von Sauerstoff in Silizium - Google Patents

Präziser kontrollierter Niederschlag von Sauerstoff in Silizium

Info

Publication number
DE69630328D1
DE69630328D1 DE69630328T DE69630328T DE69630328D1 DE 69630328 D1 DE69630328 D1 DE 69630328D1 DE 69630328 T DE69630328 T DE 69630328T DE 69630328 T DE69630328 T DE 69630328T DE 69630328 D1 DE69630328 D1 DE 69630328D1
Authority
DE
Germany
Prior art keywords
oxygen
silicon
controlled precipitation
precise controlled
precise
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69630328T
Other languages
English (en)
Other versions
DE69630328T2 (de
Inventor
Robert Falster
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Publication of DE69630328D1 publication Critical patent/DE69630328D1/de
Application granted granted Critical
Publication of DE69630328T2 publication Critical patent/DE69630328T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
DE69630328T 1995-03-14 1996-03-08 Präziser kontrollierter Niederschlag von Sauerstoff in Silizium Expired - Lifetime DE69630328T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US403301 1995-03-14
US08/403,301 US5593494A (en) 1995-03-14 1995-03-14 Precision controlled precipitation of oxygen in silicon

Publications (2)

Publication Number Publication Date
DE69630328D1 true DE69630328D1 (de) 2003-11-20
DE69630328T2 DE69630328T2 (de) 2004-05-06

Family

ID=23595295

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69630328T Expired - Lifetime DE69630328T2 (de) 1995-03-14 1996-03-08 Präziser kontrollierter Niederschlag von Sauerstoff in Silizium

Country Status (9)

Country Link
US (1) US5593494A (de)
EP (1) EP0732431B1 (de)
JP (1) JPH08253392A (de)
KR (1) KR960035771A (de)
CN (1) CN1061705C (de)
DE (1) DE69630328T2 (de)
MY (1) MY115003A (de)
SG (1) SG43246A1 (de)
TW (1) TW344850B (de)

Families Citing this family (46)

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US5788763A (en) * 1995-03-09 1998-08-04 Toshiba Ceramics Co., Ltd. Manufacturing method of a silicon wafer having a controlled BMD concentration
US5904768A (en) * 1996-10-15 1999-05-18 Memc Electronic Materials, Inc. Process for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic
US5994761A (en) * 1997-02-26 1999-11-30 Memc Electronic Materials Spa Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
US6379642B1 (en) * 1997-04-09 2002-04-30 Memc Electronic Materials, Inc. Vacancy dominated, defect-free silicon
SG105513A1 (en) * 1997-04-09 2004-08-27 Memc Electronics Materials Inc Low defect density, ideal oxygen precipitating silicon
EP0973964B1 (de) 1997-04-09 2002-09-04 MEMC Electronic Materials, Inc. Selbstinterstitiell dominiertes silizium mit niedriger defektdichte
US5882989A (en) * 1997-09-22 1999-03-16 Memc Electronic Materials, Inc. Process for the preparation of silicon wafers having a controlled distribution of oxygen precipitate nucleation centers
US6328795B2 (en) * 1998-06-26 2001-12-11 Memc Electronic Materials, Inc. Process for growth of defect free silicon crystals of arbitrarily large diameters
US6828690B1 (en) * 1998-08-05 2004-12-07 Memc Electronic Materials, Inc. Non-uniform minority carrier lifetime distributions in high performance silicon power devices
EP1914796B1 (de) * 1998-09-02 2012-06-06 MEMC Electronic Materials, Inc. Verfahren zur Herstellung eines Czochralski-Siliziumwafers ohne Sauerstoffniederschlag
CN1155074C (zh) * 1998-09-02 2004-06-23 Memc电子材料有限公司 从低缺陷密度的单晶硅上制备硅-绝缘体结构
JP4405083B2 (ja) 1998-09-02 2010-01-27 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 理想的な酸素析出シリコンウエハの製造方法
CN1181522C (zh) 1998-09-02 2004-12-22 Memc电子材料有限公司 具有改进的内部收气的热退火单晶硅片及其热处理工艺
US6336968B1 (en) 1998-09-02 2002-01-08 Memc Electronic Materials, Inc. Non-oxygen precipitating czochralski silicon wafers
CN1296526C (zh) 1998-10-14 2007-01-24 Memc电子材料有限公司 热退火后的低缺陷密度单晶硅
US6284039B1 (en) * 1998-10-14 2001-09-04 Memc Electronic Materials, Inc. Epitaxial silicon wafers substantially free of grown-in defects
JP2000154070A (ja) * 1998-11-16 2000-06-06 Suminoe Textile Co Ltd セラミックス三次元構造体及びその製造方法
US6284384B1 (en) 1998-12-09 2001-09-04 Memc Electronic Materials, Inc. Epitaxial silicon wafer with intrinsic gettering
US20030051656A1 (en) 1999-06-14 2003-03-20 Charles Chiun-Chieh Yang Method for the preparation of an epitaxial silicon wafer with intrinsic gettering
US6635587B1 (en) 1999-09-23 2003-10-21 Memc Electronic Materials, Inc. Method for producing czochralski silicon free of agglomerated self-interstitial defects
US6599815B1 (en) 2000-06-30 2003-07-29 Memc Electronic Materials, Inc. Method and apparatus for forming a silicon wafer with a denuded zone
JP2004503085A (ja) * 2000-06-30 2004-01-29 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 削剥領域を備えたシリコンウエハの製造方法及び製造装置
US6339016B1 (en) 2000-06-30 2002-01-15 Memc Electronic Materials, Inc. Method and apparatus for forming an epitaxial silicon wafer with a denuded zone
DE60213759T2 (de) * 2001-01-26 2006-11-30 Memc Electronic Materials, Inc. Silizium mit niedriger defektdichte und mit leerstellendominiertem kern, das im wesentlichen frei von oxidationsinduzierten stapelfehlern ist
JP2004537161A (ja) * 2001-04-11 2004-12-09 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 高抵抗率ｃｚシリコンにおけるサーマルドナー生成の制御
WO2002086960A1 (en) * 2001-04-20 2002-10-31 Memc Electronic Materials, Inc. Method for the preparation of a silicon wafer having stabilized oxygen precipitates
EP1983561A2 (de) * 2001-07-10 2008-10-22 Shin-Etsu Handotai Company Limited Herstellungsverfahren eines Silizium-Epitaxialwafers und entsprechend hergestellter Silizium-Epitaxialwafer
US6808781B2 (en) 2001-12-21 2004-10-26 Memc Electronic Materials, Inc. Silicon wafers with stabilized oxygen precipitate nucleation centers and process for making the same
EP1456875A2 (de) * 2001-12-21 2004-09-15 MEMC Electronic Materials, Inc. Siliziumscheiben mit idealem sauerstoff-präzipitationsverhalten mit durch nitrogen/kohlenstoff stabilisierten sauerstoffpräzipitaten-keimbildungszentren und verfahren zu deren herstellung
US7201800B2 (en) 2001-12-21 2007-04-10 Memc Electronic Materials, Inc. Process for making silicon wafers with stabilized oxygen precipitate nucleation centers
KR20040007025A (ko) * 2002-07-16 2004-01-24 주식회사 하이닉스반도체 반도체 웨이퍼 제조 방법
US6955718B2 (en) * 2003-07-08 2005-10-18 Memc Electronic Materials, Inc. Process for preparing a stabilized ideal oxygen precipitating silicon wafer
CN100338270C (zh) * 2004-11-05 2007-09-19 北京有色金属研究总院 一种单晶硅抛光片热处理工艺
US7485928B2 (en) * 2005-11-09 2009-02-03 Memc Electronic Materials, Inc. Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering
JP5121139B2 (ja) * 2005-12-27 2013-01-16 ジルトロニック アクチエンゲゼルシャフト アニールウエハの製造方法
WO2007137182A2 (en) 2006-05-19 2007-11-29 Memc Electronic Materials, Inc. Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during cz growth
US20090004426A1 (en) * 2007-06-29 2009-01-01 Memc Electronic Materials, Inc. Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates
US20090004458A1 (en) * 2007-06-29 2009-01-01 Memc Electronic Materials, Inc. Diffusion Control in Heavily Doped Substrates
JP5597378B2 (ja) * 2009-03-27 2014-10-01 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハの熱処理方法
DE112013005512B4 (de) 2012-11-19 2019-03-28 Globalwafers Co., Ltd. Herstellung von Wafern mit hoher Präzipitatdichte durch Aktivierung von inaktiven Sauerstoffpräzipationskeimen durch Hitzebehandlung
JP6260100B2 (ja) * 2013-04-03 2018-01-17 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
FR3009380B1 (fr) * 2013-08-02 2015-07-31 Commissariat Energie Atomique Procede de localisation d'une plaquette dans son lingot
SG11201900068PA (en) * 2016-07-06 2019-02-27 Tokuyama Corp Single crystal silicon plate-shaped body and production method therefor
CN110121788B (zh) * 2016-11-14 2023-03-28 信越化学工业株式会社 高光电转换效率太阳能电池的制造方法及高光电转换效率太阳能电池
CN109841513A (zh) * 2017-11-24 2019-06-04 上海新昇半导体科技有限公司 一种晶片及其制造方法、电子装置
CN109346433B (zh) * 2018-09-26 2020-10-23 上海新傲科技股份有限公司 半导体衬底的键合方法以及键合后的半导体衬底

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GB2080780B (en) * 1980-07-18 1983-06-29 Secr Defence Heat treatment of silicon slices
NL8102101A (nl) * 1981-04-29 1982-11-16 Philips Nv Werkwijze voor het optrekken van een siliciumstaaf en halfgeleiderinrichting vervaardigd uit de siliciumstaaf.
JPS57197827A (en) * 1981-05-29 1982-12-04 Hitachi Ltd Semiconductor substrate
US4437922A (en) * 1982-03-26 1984-03-20 International Business Machines Corporation Method for tailoring oxygen precipitate particle density and distribution silicon wafers
EP0098406A1 (de) * 1982-07-06 1984-01-18 Texas Instruments Incorporated Wachsende Keimbildung von Änderungen in fester Phase
US4622082A (en) * 1984-06-25 1986-11-11 Monsanto Company Conditioned semiconductor substrates
US4809196A (en) * 1986-04-10 1989-02-28 International Business Machines Corporation Method for designating/sorting semiconductor wafers according to predicted oxygen precipitation behavior
US4851358A (en) * 1988-02-11 1989-07-25 Dns Electronic Materials, Inc. Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing
WO1989011731A1 (en) * 1988-05-17 1989-11-30 Xicor, Inc. Deposited tunneling oxide
JPH0226031A (ja) * 1988-07-14 1990-01-29 Toshiba Ceramics Co Ltd シリコンウェーハ
DE3841352A1 (de) * 1988-12-08 1990-06-21 Philips Patentverwaltung Verfahren zur herstellung eines maskentraegers aus sic fuer strahlungslithographie-masken
JPH02263792A (ja) * 1989-03-31 1990-10-26 Shin Etsu Handotai Co Ltd シリコンの熱処理方法
US5096839A (en) * 1989-09-20 1992-03-17 Kabushiki Kaisha Toshiba Silicon wafer with defined interstitial oxygen concentration
JPH0777994B2 (ja) * 1989-11-16 1995-08-23 信越半導体株式会社 単結晶の酸素濃度コントロール方法及び装置
JP2588632B2 (ja) * 1990-09-12 1997-03-05 富士通株式会社 シリコン単結晶の酸素析出方法
JPH0750713B2 (ja) * 1990-09-21 1995-05-31 コマツ電子金属株式会社 半導体ウェーハの熱処理方法
IT1242014B (it) * 1990-11-15 1994-02-02 Memc Electronic Materials Procedimento per il trattamento di fette di silicio per ottenere in esse profili di precipitazione controllati per la produzione di componenti elettronici.
KR960000952B1 (ko) * 1991-03-05 1996-01-15 후지쓰 가부시끼가이샤 반도체 장치의 생산공정
JP2758093B2 (ja) * 1991-10-07 1998-05-25 信越半導体株式会社 半導体ウェーハの製造方法
CA2064486C (en) * 1992-03-31 2001-08-21 Alain Comeau Method of preparing semiconductor wafer with good intrinsic gettering

Also Published As

Publication number Publication date
US5593494A (en) 1997-01-14
CN1061705C (zh) 2001-02-07
CN1136604A (zh) 1996-11-27
KR960035771A (ko) 1996-10-28
SG43246A1 (en) 1997-10-17
TW344850B (en) 1998-11-11
JPH08253392A (ja) 1996-10-01
EP0732431B1 (de) 2003-10-15
MY115003A (en) 2003-03-31
EP0732431A1 (de) 1996-09-18
DE69630328T2 (de) 2004-05-06

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