DE69625815T2 - Durchbruchtransierter niederspannungs-unterdrücker mit zweischichtiger basis - Google Patents

Durchbruchtransierter niederspannungs-unterdrücker mit zweischichtiger basis

Info

Publication number
DE69625815T2
DE69625815T2 DE69625815T DE69625815T DE69625815T2 DE 69625815 T2 DE69625815 T2 DE 69625815T2 DE 69625815 T DE69625815 T DE 69625815T DE 69625815 T DE69625815 T DE 69625815T DE 69625815 T2 DE69625815 T2 DE 69625815T2
Authority
DE
Germany
Prior art keywords
breakthrough
double
low
layer base
voltage suppressor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69625815T
Other languages
English (en)
Other versions
DE69625815D1 (de
Inventor
Bin Yu
Chenming Hu
Ya-Chin King
Jeffrey T Pohlman
Rita Trivedi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semtech Corp
Original Assignee
Semtech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semtech Corp filed Critical Semtech Corp
Publication of DE69625815D1 publication Critical patent/DE69625815D1/de
Application granted granted Critical
Publication of DE69625815T2 publication Critical patent/DE69625815T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8618—Diodes with bulk potential barrier, e.g. Camel diodes, Planar Doped Barrier diodes, Graded bandgap diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69625815T 1995-06-30 1996-06-03 Durchbruchtransierter niederspannungs-unterdrücker mit zweischichtiger basis Expired - Fee Related DE69625815T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/497,079 US5880511A (en) 1995-06-30 1995-06-30 Low-voltage punch-through transient suppressor employing a dual-base structure
PCT/US1996/008545 WO1997002606A1 (en) 1995-06-30 1996-06-03 Low-voltage punch-through transient suppressor employing a dual-base structure

Publications (2)

Publication Number Publication Date
DE69625815D1 DE69625815D1 (de) 2003-02-20
DE69625815T2 true DE69625815T2 (de) 2003-10-30

Family

ID=23975376

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69625815T Expired - Fee Related DE69625815T2 (de) 1995-06-30 1996-06-03 Durchbruchtransierter niederspannungs-unterdrücker mit zweischichtiger basis

Country Status (5)

Country Link
US (2) US5880511A (de)
EP (1) EP0840943B1 (de)
JP (1) JP3295092B2 (de)
DE (1) DE69625815T2 (de)
WO (1) WO1997002606A1 (de)

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DE60030059T2 (de) * 1999-04-08 2007-03-29 Koninklijke Philips Electronics N.V. Durchbruchsdiode und verfahren zur herstellung
ATE393478T1 (de) 2000-02-15 2008-05-15 Nxp Bv Durchbruchsdiode und verfahren zur herstellung
FR2815472B1 (fr) * 2000-10-13 2003-03-21 St Microelectronics Sa Diac planar
FR2815473B1 (fr) * 2000-10-13 2003-03-21 St Microelectronics Sa Diac planar symetrique
US6633063B2 (en) 2001-05-04 2003-10-14 Semiconductor Components Industries Llc Low voltage transient voltage suppressor and method of making
US6600204B2 (en) * 2001-07-11 2003-07-29 General Semiconductor, Inc. Low-voltage punch-through bi-directional transient-voltage suppression devices having surface breakdown protection and methods of making the same
US6489660B1 (en) 2001-05-22 2002-12-03 General Semiconductor, Inc. Low-voltage punch-through bi-directional transient-voltage suppression devices
US7384854B2 (en) * 2002-03-08 2008-06-10 International Business Machines Corporation Method of forming low capacitance ESD robust diodes
US6784520B2 (en) * 2002-04-18 2004-08-31 Matsushita Electric Industrial Co., Ltd. Semiconductor devices constitute constant voltage devices used to raise internal voltage
US6781161B1 (en) 2003-04-09 2004-08-24 Teccor Electronics, Lp Non-gated thyristor device
US7244970B2 (en) 2004-12-22 2007-07-17 Tyco Electronics Corporation Low capacitance two-terminal barrier controlled TVS diodes
EP1866970A1 (de) * 2005-03-22 2007-12-19 University College Cork-National University of Ireland, Cork Diodenstruktur
US20060216913A1 (en) * 2005-03-25 2006-09-28 Pu-Ju Kung Asymmetric bidirectional transient voltage suppressor and method of forming same
US7655990B2 (en) * 2006-06-15 2010-02-02 System General Corp. Voltage-clipping device with high breakdown voltage
JP2008172165A (ja) * 2007-01-15 2008-07-24 Toshiba Corp 半導体装置
US7576370B2 (en) * 2007-04-20 2009-08-18 California Micro Devices Low operating voltage electro-static discharge device and method
US7943959B2 (en) * 2007-08-28 2011-05-17 Littelfuse, Inc. Low capacitance semiconductor device
US7638816B2 (en) * 2007-08-28 2009-12-29 Littelfuse, Inc. Epitaxial surge protection device
US7538395B2 (en) * 2007-09-21 2009-05-26 Semiconductor Components Industries, L.L.C. Method of forming low capacitance ESD device and structure therefor
US7579632B2 (en) * 2007-09-21 2009-08-25 Semiconductor Components Industries, L.L.C. Multi-channel ESD device and method therefor
US7666751B2 (en) * 2007-09-21 2010-02-23 Semiconductor Components Industries, Llc Method of forming a high capacitance diode and structure therefor
US7842969B2 (en) * 2008-07-10 2010-11-30 Semiconductor Components Industries, Llc Low clamp voltage ESD device and method therefor
US7955941B2 (en) * 2008-09-11 2011-06-07 Semiconductor Components Industries, Llc Method of forming an integrated semiconductor device and structure therefor
KR100936644B1 (ko) 2008-10-06 2010-01-14 (주) 알에프세미 반도체 소자 및 그 제조방법
US7812367B2 (en) * 2008-10-15 2010-10-12 Semiconductor Components Industries, Llc Two terminal low capacitance multi-channel ESD device
US8089095B2 (en) 2008-10-15 2012-01-03 Semiconductor Components Industries, Llc Two terminal multi-channel ESD device and method therefor
US8445917B2 (en) * 2009-03-20 2013-05-21 Cree, Inc. Bidirectional silicon carbide transient voltage suppression devices
US8288839B2 (en) * 2009-04-30 2012-10-16 Alpha & Omega Semiconductor, Inc. Transient voltage suppressor having symmetrical breakdown voltages
FR2960097A1 (fr) * 2010-05-11 2011-11-18 St Microelectronics Tours Sas Composant de protection bidirectionnel
US8384126B2 (en) 2010-06-22 2013-02-26 Littelfuse, Inc. Low voltage PNPN protection device
FR2963983B1 (fr) * 2010-08-18 2012-09-07 St Microelectronics Tours Sas Composant de protection bidirectionnel dissymetrique
US8557654B2 (en) * 2010-12-13 2013-10-15 Sandisk 3D Llc Punch-through diode
CN102142370B (zh) * 2010-12-20 2013-01-23 杭州士兰集成电路有限公司 一种在p+衬底上制备低压二极管芯片的方法及其结构
CN102194894B (zh) * 2011-05-06 2013-01-02 杭州杭鑫电子工业有限公司 一种抗电浪涌低压保护硅二极管及其制备方法
US8530902B2 (en) * 2011-10-26 2013-09-10 General Electric Company System for transient voltage suppressors
DE102011056515B4 (de) * 2011-12-16 2023-12-07 Tdk Electronics Ag Elektrisches Bauelement und Verfahren zur Herstellung eines elektrischen Bauelements
US8730629B2 (en) 2011-12-22 2014-05-20 General Electric Company Variable breakdown transient voltage suppressor
CN103367393B (zh) * 2012-03-28 2016-04-13 上海华虹宏力半导体制造有限公司 瞬态电压抑制器件及制造工艺方法
US9337178B2 (en) 2012-12-09 2016-05-10 Semiconductor Components Industries, Llc Method of forming an ESD device and structure therefor
US8987858B2 (en) 2013-03-18 2015-03-24 General Electric Company Method and system for transient voltage suppression
US20140284659A1 (en) * 2013-03-21 2014-09-25 Bourns, Inc. Transient Voltage Suppressor, Design and Process
US9997507B2 (en) * 2013-07-25 2018-06-12 General Electric Company Semiconductor assembly and method of manufacture
US10103540B2 (en) 2014-04-24 2018-10-16 General Electric Company Method and system for transient voltage suppression devices with active control
TWI563627B (en) 2014-06-13 2016-12-21 Richtek Technology Corp Transient voltage suppression device and manufacturing method thereof
US9806157B2 (en) * 2014-10-03 2017-10-31 General Electric Company Structure and method for transient voltage suppression devices with a two-region base
KR102076374B1 (ko) 2014-11-18 2020-03-03 매그나칩 반도체 유한회사 Ｅｓｄ 장치 및 그 제조 방법
FR3029686A1 (fr) * 2014-12-08 2016-06-10 St Microelectronics Tours Sas Dispositif radiofrequence protege contre des surtensions
WO2016159962A1 (en) * 2015-03-31 2016-10-06 Vishay General Semiconductor Llc Thin bi-directional transient voltage suppressor (tvs) or zener diode
US9653617B2 (en) 2015-05-27 2017-05-16 Sandisk Technologies Llc Multiple junction thin film transistor
TWI580002B (zh) * 2015-08-26 2017-04-21 立錡科技股份有限公司 暫態電壓抑制元件及其製造方法
US10217733B2 (en) 2015-09-15 2019-02-26 Semiconductor Components Industries, Llc Fast SCR structure for ESD protection
US10431697B2 (en) 2015-09-25 2019-10-01 Rohm Co., Ltd. Bi-directional Zener diode having a first and second impurity regions groups formed in surface portion of a substrate and a first electrode electrically connected to at least one first impurity regions, and not connected from at least another one
US10535648B2 (en) 2017-08-23 2020-01-14 Semiconductor Components Industries, Llc TVS semiconductor device and method therefor
TWI724256B (zh) * 2017-11-24 2021-04-11 源芯半導體股份有限公司 暫態電壓抑制器
JP7121570B2 (ja) 2018-07-18 2022-08-18 ローム株式会社 双方向ツェナーダイオードおよび双方向ツェナーダイオードの製造方法
US10930637B2 (en) 2018-09-06 2021-02-23 Amazing Microelectronic Corp. Transient voltage suppressor
CN113314411A (zh) * 2021-06-08 2021-08-27 深圳技术大学 低结电容瞬时电压抑制二极管的制备方法

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US4017882A (en) * 1975-12-15 1977-04-12 Rca Corporation Transistor having integrated protection
JPS5346285A (en) * 1976-10-08 1978-04-25 Hitachi Ltd Mesa type high breakdown voltage semiconductor device
JPS5691478A (en) * 1979-12-26 1981-07-24 Hitachi Ltd Manufacture of punch-through type diode
US4602267A (en) * 1981-02-17 1986-07-22 Fujitsu Limited Protection element for semiconductor device
JPS5860576A (ja) * 1981-10-06 1983-04-11 Mitsubishi Electric Corp ツエナ−ダイオ−ド
JPS6126267A (ja) * 1984-07-16 1986-02-05 Rohm Co Ltd 双方向性ツエナ−ダイオ−ド
US4631562A (en) * 1985-05-31 1986-12-23 Rca Corporation Zener diode structure
JPS6272163A (ja) * 1985-09-26 1987-04-02 Toshiba Corp 半導体装置
JPH06126267A (ja) * 1992-10-14 1994-05-10 Toshiba Corp 厨芥処理装置
US5528064A (en) * 1994-08-17 1996-06-18 Texas Instruments Inc. Structure for protecting integrated circuits from electro-static discharge

Also Published As

Publication number Publication date
JP3295092B2 (ja) 2002-06-24
DE69625815D1 (de) 2003-02-20
EP0840943A1 (de) 1998-05-13
US5880511A (en) 1999-03-09
EP0840943B1 (de) 2003-01-15
JPH11509041A (ja) 1999-08-03
WO1997002606A1 (en) 1997-01-23
US6015999A (en) 2000-01-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee