DE69624645T2 - Verfahren zum Herstellen einer monolithischen Halbleiteranordnung mit integrierten mikrogefertigten Oberflächenstrukturen - Google Patents

Verfahren zum Herstellen einer monolithischen Halbleiteranordnung mit integrierten mikrogefertigten Oberflächenstrukturen

Info

Publication number
DE69624645T2
DE69624645T2 DE69624645T DE69624645T DE69624645T2 DE 69624645 T2 DE69624645 T2 DE 69624645T2 DE 69624645 T DE69624645 T DE 69624645T DE 69624645 T DE69624645 T DE 69624645T DE 69624645 T2 DE69624645 T2 DE 69624645T2
Authority
DE
Germany
Prior art keywords
producing
surface structures
semiconductor arrangement
monolithic semiconductor
integrated microfabricated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69624645T
Other languages
English (en)
Other versions
DE69624645D1 (de
Inventor
Ljubisa Ristic
Shemansky, Jr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of DE69624645D1 publication Critical patent/DE69624645D1/de
Publication of DE69624645T2 publication Critical patent/DE69624645T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
DE69624645T 1995-09-05 1996-08-30 Verfahren zum Herstellen einer monolithischen Halbleiteranordnung mit integrierten mikrogefertigten Oberflächenstrukturen Expired - Fee Related DE69624645T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/523,581 US5550090A (en) 1995-09-05 1995-09-05 Method for fabricating a monolithic semiconductor device with integrated surface micromachined structures

Publications (2)

Publication Number Publication Date
DE69624645D1 DE69624645D1 (de) 2002-12-12
DE69624645T2 true DE69624645T2 (de) 2003-04-24

Family

ID=24085580

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69624645T Expired - Fee Related DE69624645T2 (de) 1995-09-05 1996-08-30 Verfahren zum Herstellen einer monolithischen Halbleiteranordnung mit integrierten mikrogefertigten Oberflächenstrukturen

Country Status (5)

Country Link
US (1) US5550090A (de)
EP (1) EP0762510B1 (de)
JP (1) JP4138036B2 (de)
KR (1) KR100440651B1 (de)
DE (1) DE69624645T2 (de)

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US6377155B1 (en) 1995-10-10 2002-04-23 Georgia Tech Research Corp. Microfabricated electromagnetic system and method for forming electromagnets in microfabricated devices
US5847631A (en) * 1995-10-10 1998-12-08 Georgia Tech Research Corporation Magnetic relay system and method capable of microfabrication production
US6281560B1 (en) 1995-10-10 2001-08-28 Georgia Tech Research Corp. Microfabricated electromagnetic system and method for forming electromagnets in microfabricated devices
DE19537814B4 (de) * 1995-10-11 2009-11-19 Robert Bosch Gmbh Sensor und Verfahren zur Herstellung eines Sensors
US5867302A (en) * 1997-08-07 1999-02-02 Sandia Corporation Bistable microelectromechanical actuator
US6136677A (en) * 1997-09-25 2000-10-24 Siemens Aktiengesellschaft Method of fabricating semiconductor chips with silicide and implanted junctions
US6028343A (en) * 1997-10-24 2000-02-22 Stmicroelectronics, Inc. Integrated released beam sensor for sensing acceleration and associated methods
KR100271138B1 (ko) * 1998-01-22 2001-03-02 윤덕용 잉크젯 프린트 헤드 및 그 제조 방법
DE19819456B4 (de) * 1998-04-30 2011-06-09 Robert Bosch Gmbh Verfahren zur Herstellung eines mikromechanischen Bauelements
DE19820816B4 (de) * 1998-05-09 2006-05-11 Robert Bosch Gmbh Bondpadstruktur und entsprechendes Herstellungsverfahren
DE19960094A1 (de) 1999-12-14 2001-07-05 Bosch Gmbh Robert Verfahren zur mikromechanischen Herstellung eines Halbleiterelements, insbesondere Beschleunigungssensors
EP1370877A4 (de) * 2001-02-23 2007-01-03 Water Corp Vibrationsmessvorrichtung
US6756317B2 (en) 2001-04-23 2004-06-29 Memx, Inc. Method for making a microstructure by surface micromachining
US6600587B2 (en) 2001-04-23 2003-07-29 Memx, Inc. Surface micromachined optical system with reinforced mirror microstructure
DE10196506B3 (de) * 2001-06-13 2014-09-04 Mitsubishi Denki K.K. Herstellungsverfahren für einen Dünnfilmstrukturkörper
DE10196538B3 (de) * 2001-06-21 2015-08-13 Mitsubishi Denki K.K. Herstellungsverfahren für einen Dünnschicht-Konstruktionskörper
JP4558315B2 (ja) * 2001-07-23 2010-10-06 三菱電機株式会社 薄膜構造体の製造方法
WO2003012859A1 (fr) * 2001-07-30 2003-02-13 Mitsubishi Denki Kabushiki Kaisha Structure d'electrode et procede de fabrication d'une structure a film mince
CN1221035C (zh) * 2001-08-01 2005-09-28 三菱电机株式会社 薄膜构造体的制造方法
TWI220423B (en) * 2001-08-30 2004-08-21 Hrl Lab Llc A method of fabrication of a sensor
US6792804B2 (en) 2001-10-19 2004-09-21 Kionix, Inc. Sensor for measuring out-of-plane acceleration
US6747340B2 (en) * 2002-03-15 2004-06-08 Memx, Inc. Multi-level shielded multi-conductor interconnect bus for MEMS
US7265429B2 (en) * 2002-08-07 2007-09-04 Chang-Feng Wan System and method of fabricating micro cavities
US7429495B2 (en) * 2002-08-07 2008-09-30 Chang-Feng Wan System and method of fabricating micro cavities
US7265477B2 (en) * 2004-01-05 2007-09-04 Chang-Feng Wan Stepping actuator and method of manufacture therefore
JP4519804B2 (ja) * 2005-05-27 2010-08-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7560789B2 (en) 2005-05-27 2009-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2007152554A (ja) * 2005-05-27 2007-06-21 Semiconductor Energy Lab Co Ltd 半導体装置
US7651758B2 (en) * 2005-10-18 2010-01-26 Endres Machining Innovations Llc System for improving the wearability of a surface and related method
JP5078324B2 (ja) * 2005-11-30 2012-11-21 株式会社半導体エネルギー研究所 微小電気機械式装置の作製方法
US8008735B2 (en) 2006-03-20 2011-08-30 Semiconductor Energy Laboratory Co., Ltd. Micromachine device with a spatial portion formed within
JP5095244B2 (ja) * 2006-03-20 2012-12-12 株式会社半導体エネルギー研究所 マイクロマシン、およびその作製方法
US20100289065A1 (en) * 2009-05-12 2010-11-18 Pixart Imaging Incorporation Mems integrated chip with cross-area interconnection
JP5541772B2 (ja) * 2009-10-08 2014-07-09 三菱電機株式会社 電極構造
RU2511614C2 (ru) * 2012-07-17 2014-04-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Рязанский государственный радиотехнический университет" Электронная схема и/или микроэлектромеханическая система с радиационным источником подвижных носителей заряда
US9340412B2 (en) * 2014-07-28 2016-05-17 Ams International Ag Suspended membrane for capacitive pressure sensor

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US5343064A (en) * 1988-03-18 1994-08-30 Spangler Leland J Fully integrated single-crystal silicon-on-insulator process, sensors and circuits
US5326726A (en) * 1990-08-17 1994-07-05 Analog Devices, Inc. Method for fabricating monolithic chip containing integrated circuitry and suspended microstructure
US5417111A (en) * 1990-08-17 1995-05-23 Analog Devices, Inc. Monolithic chip containing integrated circuitry and suspended microstructure
US5337606A (en) * 1992-08-10 1994-08-16 Motorola, Inc. Laterally sensitive accelerometer and method for making
US5369544A (en) * 1993-04-05 1994-11-29 Ford Motor Company Silicon-on-insulator capacitive surface micromachined absolute pressure sensor
US5504026A (en) * 1995-04-14 1996-04-02 Analog Devices, Inc. Methods for planarization and encapsulation of micromechanical devices in semiconductor processes

Also Published As

Publication number Publication date
KR970017990A (ko) 1997-04-30
EP0762510B1 (de) 2002-11-06
KR100440651B1 (ko) 2004-10-22
US5550090A (en) 1996-08-27
EP0762510A2 (de) 1997-03-12
JPH09129896A (ja) 1997-05-16
JP4138036B2 (ja) 2008-08-20
DE69624645D1 (de) 2002-12-12
EP0762510A3 (de) 1997-07-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FREESCALE SEMICONDUCTOR, INC., AUSTIN, TEX., US

8339 Ceased/non-payment of the annual fee