DE69624645D1 - Verfahren zum Herstellen einer monolithischen Halbleiteranordnung mit integrierten mikrogefertigten Oberflächenstrukturen - Google Patents
Verfahren zum Herstellen einer monolithischen Halbleiteranordnung mit integrierten mikrogefertigten OberflächenstrukturenInfo
- Publication number
- DE69624645D1 DE69624645D1 DE69624645T DE69624645T DE69624645D1 DE 69624645 D1 DE69624645 D1 DE 69624645D1 DE 69624645 T DE69624645 T DE 69624645T DE 69624645 T DE69624645 T DE 69624645T DE 69624645 D1 DE69624645 D1 DE 69624645D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- surface structures
- semiconductor arrangement
- monolithic semiconductor
- integrated microfabricated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/523,581 US5550090A (en) | 1995-09-05 | 1995-09-05 | Method for fabricating a monolithic semiconductor device with integrated surface micromachined structures |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69624645D1 true DE69624645D1 (de) | 2002-12-12 |
DE69624645T2 DE69624645T2 (de) | 2003-04-24 |
Family
ID=24085580
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69624645T Expired - Fee Related DE69624645T2 (de) | 1995-09-05 | 1996-08-30 | Verfahren zum Herstellen einer monolithischen Halbleiteranordnung mit integrierten mikrogefertigten Oberflächenstrukturen |
Country Status (5)
Country | Link |
---|---|
US (1) | US5550090A (de) |
EP (1) | EP0762510B1 (de) |
JP (1) | JP4138036B2 (de) |
KR (1) | KR100440651B1 (de) |
DE (1) | DE69624645T2 (de) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4341271B4 (de) * | 1993-12-03 | 2005-11-03 | Robert Bosch Gmbh | Beschleunigungssensor aus kristallinem Material und Verfahren zur Herstellung dieses Beschleunigungssensors |
US6012336A (en) * | 1995-09-06 | 2000-01-11 | Sandia Corporation | Capacitance pressure sensor |
US5963788A (en) * | 1995-09-06 | 1999-10-05 | Sandia Corporation | Method for integrating microelectromechanical devices with electronic circuitry |
US5798283A (en) * | 1995-09-06 | 1998-08-25 | Sandia Corporation | Method for integrating microelectromechanical devices with electronic circuitry |
US6377155B1 (en) | 1995-10-10 | 2002-04-23 | Georgia Tech Research Corp. | Microfabricated electromagnetic system and method for forming electromagnets in microfabricated devices |
US5847631A (en) * | 1995-10-10 | 1998-12-08 | Georgia Tech Research Corporation | Magnetic relay system and method capable of microfabrication production |
US6281560B1 (en) | 1995-10-10 | 2001-08-28 | Georgia Tech Research Corp. | Microfabricated electromagnetic system and method for forming electromagnets in microfabricated devices |
DE19537814B4 (de) * | 1995-10-11 | 2009-11-19 | Robert Bosch Gmbh | Sensor und Verfahren zur Herstellung eines Sensors |
US5867302A (en) * | 1997-08-07 | 1999-02-02 | Sandia Corporation | Bistable microelectromechanical actuator |
US6136677A (en) * | 1997-09-25 | 2000-10-24 | Siemens Aktiengesellschaft | Method of fabricating semiconductor chips with silicide and implanted junctions |
US6028343A (en) * | 1997-10-24 | 2000-02-22 | Stmicroelectronics, Inc. | Integrated released beam sensor for sensing acceleration and associated methods |
KR100271138B1 (ko) * | 1998-01-22 | 2001-03-02 | 윤덕용 | 잉크젯 프린트 헤드 및 그 제조 방법 |
DE19819456B4 (de) * | 1998-04-30 | 2011-06-09 | Robert Bosch Gmbh | Verfahren zur Herstellung eines mikromechanischen Bauelements |
DE19820816B4 (de) * | 1998-05-09 | 2006-05-11 | Robert Bosch Gmbh | Bondpadstruktur und entsprechendes Herstellungsverfahren |
DE19960094A1 (de) | 1999-12-14 | 2001-07-05 | Bosch Gmbh Robert | Verfahren zur mikromechanischen Herstellung eines Halbleiterelements, insbesondere Beschleunigungssensors |
EP1370877A4 (de) * | 2001-02-23 | 2007-01-03 | Water Corp | Vibrationsmessvorrichtung |
US6756317B2 (en) | 2001-04-23 | 2004-06-29 | Memx, Inc. | Method for making a microstructure by surface micromachining |
US6600587B2 (en) | 2001-04-23 | 2003-07-29 | Memx, Inc. | Surface micromachined optical system with reinforced mirror microstructure |
DE10196506B3 (de) * | 2001-06-13 | 2014-09-04 | Mitsubishi Denki K.K. | Herstellungsverfahren für einen Dünnfilmstrukturkörper |
DE10196538B3 (de) * | 2001-06-21 | 2015-08-13 | Mitsubishi Denki K.K. | Herstellungsverfahren für einen Dünnschicht-Konstruktionskörper |
JP4558315B2 (ja) * | 2001-07-23 | 2010-10-06 | 三菱電機株式会社 | 薄膜構造体の製造方法 |
WO2003012859A1 (fr) * | 2001-07-30 | 2003-02-13 | Mitsubishi Denki Kabushiki Kaisha | Structure d'electrode et procede de fabrication d'une structure a film mince |
CN1221035C (zh) * | 2001-08-01 | 2005-09-28 | 三菱电机株式会社 | 薄膜构造体的制造方法 |
TWI220423B (en) * | 2001-08-30 | 2004-08-21 | Hrl Lab Llc | A method of fabrication of a sensor |
US6792804B2 (en) | 2001-10-19 | 2004-09-21 | Kionix, Inc. | Sensor for measuring out-of-plane acceleration |
US6747340B2 (en) * | 2002-03-15 | 2004-06-08 | Memx, Inc. | Multi-level shielded multi-conductor interconnect bus for MEMS |
US7265429B2 (en) * | 2002-08-07 | 2007-09-04 | Chang-Feng Wan | System and method of fabricating micro cavities |
US7429495B2 (en) * | 2002-08-07 | 2008-09-30 | Chang-Feng Wan | System and method of fabricating micro cavities |
US7265477B2 (en) * | 2004-01-05 | 2007-09-04 | Chang-Feng Wan | Stepping actuator and method of manufacture therefore |
JP4519804B2 (ja) * | 2005-05-27 | 2010-08-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US7560789B2 (en) | 2005-05-27 | 2009-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2007152554A (ja) * | 2005-05-27 | 2007-06-21 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US7651758B2 (en) * | 2005-10-18 | 2010-01-26 | Endres Machining Innovations Llc | System for improving the wearability of a surface and related method |
JP5078324B2 (ja) * | 2005-11-30 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 微小電気機械式装置の作製方法 |
US8008735B2 (en) | 2006-03-20 | 2011-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Micromachine device with a spatial portion formed within |
JP5095244B2 (ja) * | 2006-03-20 | 2012-12-12 | 株式会社半導体エネルギー研究所 | マイクロマシン、およびその作製方法 |
US20100289065A1 (en) * | 2009-05-12 | 2010-11-18 | Pixart Imaging Incorporation | Mems integrated chip with cross-area interconnection |
JP5541772B2 (ja) * | 2009-10-08 | 2014-07-09 | 三菱電機株式会社 | 電極構造 |
RU2511614C2 (ru) * | 2012-07-17 | 2014-04-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Рязанский государственный радиотехнический университет" | Электронная схема и/или микроэлектромеханическая система с радиационным источником подвижных носителей заряда |
US9340412B2 (en) * | 2014-07-28 | 2016-05-17 | Ams International Ag | Suspended membrane for capacitive pressure sensor |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5938621A (ja) * | 1982-08-27 | 1984-03-02 | Nissan Motor Co Ltd | 振動分析装置 |
JPS6055655A (ja) * | 1983-09-07 | 1985-03-30 | Nissan Motor Co Ltd | 梁構造体を有する半導体装置 |
US5343064A (en) * | 1988-03-18 | 1994-08-30 | Spangler Leland J | Fully integrated single-crystal silicon-on-insulator process, sensors and circuits |
US5326726A (en) * | 1990-08-17 | 1994-07-05 | Analog Devices, Inc. | Method for fabricating monolithic chip containing integrated circuitry and suspended microstructure |
US5417111A (en) * | 1990-08-17 | 1995-05-23 | Analog Devices, Inc. | Monolithic chip containing integrated circuitry and suspended microstructure |
US5337606A (en) * | 1992-08-10 | 1994-08-16 | Motorola, Inc. | Laterally sensitive accelerometer and method for making |
US5369544A (en) * | 1993-04-05 | 1994-11-29 | Ford Motor Company | Silicon-on-insulator capacitive surface micromachined absolute pressure sensor |
US5504026A (en) * | 1995-04-14 | 1996-04-02 | Analog Devices, Inc. | Methods for planarization and encapsulation of micromechanical devices in semiconductor processes |
-
1995
- 1995-09-05 US US08/523,581 patent/US5550090A/en not_active Expired - Lifetime
-
1996
- 1996-08-28 KR KR1019960036106A patent/KR100440651B1/ko not_active IP Right Cessation
- 1996-08-28 JP JP24722496A patent/JP4138036B2/ja not_active Expired - Fee Related
- 1996-08-30 EP EP96113884A patent/EP0762510B1/de not_active Expired - Lifetime
- 1996-08-30 DE DE69624645T patent/DE69624645T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR970017990A (ko) | 1997-04-30 |
EP0762510B1 (de) | 2002-11-06 |
DE69624645T2 (de) | 2003-04-24 |
KR100440651B1 (ko) | 2004-10-22 |
US5550090A (en) | 1996-08-27 |
EP0762510A2 (de) | 1997-03-12 |
JPH09129896A (ja) | 1997-05-16 |
JP4138036B2 (ja) | 2008-08-20 |
EP0762510A3 (de) | 1997-07-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: FREESCALE SEMICONDUCTOR, INC., AUSTIN, TEX., US |
|
8339 | Ceased/non-payment of the annual fee |