DE69623765T2 - Einteiliger tiegel - Google Patents

Einteiliger tiegel

Info

Publication number
DE69623765T2
DE69623765T2 DE69623765T DE69623765T DE69623765T2 DE 69623765 T2 DE69623765 T2 DE 69623765T2 DE 69623765 T DE69623765 T DE 69623765T DE 69623765 T DE69623765 T DE 69623765T DE 69623765 T2 DE69623765 T2 DE 69623765T2
Authority
DE
Germany
Prior art keywords
effusion cell
circumferential dimension
crucible
container
neck
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69623765T
Other languages
German (de)
English (en)
Other versions
DE69623765D1 (de
Inventor
E. Colombo
F Donadio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied EPI Inc
Original Assignee
Applied EPI Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23718594&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69623765(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Applied EPI Inc filed Critical Applied EPI Inc
Application granted granted Critical
Publication of DE69623765D1 publication Critical patent/DE69623765D1/de
Publication of DE69623765T2 publication Critical patent/DE69623765T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D1/00—Casings; Linings; Walls; Roofs
    • F27D1/16—Making or repairing linings ; Increasing the durability of linings; Breaking away linings
    • F27D1/1636—Repairing linings by projecting or spraying refractory materials on the lining
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/583—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/342—Boron nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B14/00—Crucible or pot furnaces
    • F27B14/08—Details specially adapted for crucible or pot furnaces
    • F27B14/10—Crucibles
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B14/00—Crucible or pot furnaces
    • F27B14/08—Details specially adapted for crucible or pot furnaces
    • F27B14/10—Crucibles
    • F27B2014/102—Form of the crucibles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
    • Y10T428/131—Glass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing [e.g., porcelain, brick, cement, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Saccharide Compounds (AREA)
  • Cookers (AREA)
  • Thermally Insulated Containers For Foods (AREA)
  • Chemical Vapour Deposition (AREA)
DE69623765T 1995-05-03 1996-05-03 Einteiliger tiegel Expired - Lifetime DE69623765T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/433,033 US5820681A (en) 1995-05-03 1995-05-03 Unibody crucible and effusion cell employing such a crucible
PCT/US1996/006267 WO1996035091A1 (en) 1995-05-03 1996-05-03 Unibody crucible

Publications (2)

Publication Number Publication Date
DE69623765D1 DE69623765D1 (de) 2002-10-24
DE69623765T2 true DE69623765T2 (de) 2003-07-17

Family

ID=23718594

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69623765T Expired - Lifetime DE69623765T2 (de) 1995-05-03 1996-05-03 Einteiliger tiegel

Country Status (7)

Country Link
US (3) US5820681A (enExample)
EP (2) EP1215307A3 (enExample)
JP (2) JPH11504613A (enExample)
AT (1) ATE224525T1 (enExample)
AU (2) AU5636796A (enExample)
DE (1) DE69623765T2 (enExample)
WO (2) WO1996034994A1 (enExample)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3212522B2 (ja) * 1996-12-27 2001-09-25 信越化学工業株式会社 分子線エピタキシー用熱分解窒化硼素るつぼ
US6053981A (en) * 1998-09-15 2000-04-25 Coherent, Inc. Effusion cell and method of use in molecular beam epitaxy
US6202591B1 (en) * 1998-11-12 2001-03-20 Flex Products, Inc. Linear aperture deposition apparatus and coating process
US6140624A (en) * 1999-07-02 2000-10-31 Advanced Ceramics Corporation Pyrolytic boron nitride radiation heater
WO2001051160A1 (en) * 2000-01-12 2001-07-19 Applied Epi, Inc. Ultra-low temperature effusion cell
JP2001220286A (ja) 2000-02-02 2001-08-14 Sharp Corp 分子線源および分子線エピタキシ装置
US7194197B1 (en) * 2000-03-16 2007-03-20 Global Solar Energy, Inc. Nozzle-based, vapor-phase, plume delivery structure for use in production of thin-film deposition layer
US6551405B1 (en) * 2000-09-22 2003-04-22 The Board Of Trustees Of The University Of Arkansas Tool and method for in situ vapor phase deposition source material reloading and maintenance
DE10056686B4 (de) * 2000-11-15 2005-09-29 Forschungsverbund Berlin E.V. Verdampferzelle und ein Verfahren zur Herstellung von Aufdampfschichten
JP2003002778A (ja) * 2001-06-26 2003-01-08 International Manufacturing & Engineering Services Co Ltd 薄膜堆積用分子線セル
US6926920B2 (en) * 2002-06-11 2005-08-09 Taiwan Semiconductor Manufacturing Co., Ltd Chemical vapor deposition (CVD) calibration method providing enhanced uniformity
JP4344631B2 (ja) * 2004-03-02 2009-10-14 長州産業株式会社 有機物薄膜堆積用分子線源
US20050232824A1 (en) * 2004-04-14 2005-10-20 Pangrcic Robert A High temperature electrolyte testing container
US20050229856A1 (en) * 2004-04-20 2005-10-20 Malik Roger J Means and method for a liquid metal evaporation source with integral level sensor and external reservoir
US7493691B2 (en) * 2004-05-20 2009-02-24 Honeywell International Inc. Co-molding metallic-lined phenolic components
JP4442558B2 (ja) * 2005-01-06 2010-03-31 三星モバイルディスプレイ株式會社 蒸発源の加熱制御方法，蒸発源の冷却制御方法および蒸発源の制御方法
EP1851355B1 (en) * 2005-02-22 2011-04-13 E-Science, Inc. Effusion cell valve
US7732737B2 (en) * 2005-10-11 2010-06-08 Kimberly-Clark Worldwide, Inc. Micro powered warming container
JP4673190B2 (ja) * 2005-11-01 2011-04-20 長州産業株式会社 薄膜堆積用分子線源とその分子線量制御方法
US20070218199A1 (en) * 2006-02-13 2007-09-20 Veeco Instruments Inc. Crucible eliminating line of sight between a source material and a target
US8747554B2 (en) * 2006-06-20 2014-06-10 Momentive Performance Materials Inc. Multi-piece ceramic crucible and method for making thereof
EP1967606A1 (en) * 2007-03-08 2008-09-10 Applied Materials, Inc. Evaporation crucible and evaporation apparatus with adapted evaporation characteristic
US20090169781A1 (en) * 2007-12-31 2009-07-02 Marc Schaepkens Low thermal conductivity low density pyrolytic boron nitride material, method of making, and articles made therefrom
US8198123B2 (en) 2008-04-15 2012-06-12 Global Solar Energy, Inc. Apparatus and methods for manufacturing thin-film solar cells
WO2010019213A2 (en) * 2008-08-11 2010-02-18 Veeco Instruments Inc. Vacuum deposition sources having heated effusion orifices
US8512806B2 (en) * 2008-08-12 2013-08-20 Momentive Performance Materials Inc. Large volume evaporation source
WO2011065998A1 (en) * 2008-12-18 2011-06-03 Veeco Instruments Inc. Linear deposition source
US20100159132A1 (en) * 2008-12-18 2010-06-24 Veeco Instruments, Inc. Linear Deposition Source
WO2011065999A1 (en) * 2008-12-18 2011-06-03 Veeco Instruments Inc. Linear deposition source
US9062369B2 (en) * 2009-03-25 2015-06-23 Veeco Instruments, Inc. Deposition of high vapor pressure materials
WO2011082179A1 (en) * 2009-12-28 2011-07-07 Global Solar Energy, Inc. Apparatus and methods of mixing and depositing thin film photovoltaic compositions
TWI477646B (zh) * 2010-08-09 2015-03-21 Hon Hai Prec Ind Co Ltd 化學氣相沉積設備
JP5720379B2 (ja) 2011-03-31 2015-05-20 日本電気株式会社 水流発電装置
DE102011121148A1 (de) * 2011-12-15 2013-06-20 Dr. Eberl Mbe-Komponenten Gmbh Vorrichtung zum Verdampfen eines Verdampfungsguts
DE102011122591A1 (de) * 2011-12-30 2013-07-04 Dr. Eberl Mbe-Komponenten Gmbh Vorrichtung zum Verdampfen eines Verdampfungsguts
WO2015066428A2 (en) 2013-11-01 2015-05-07 Bnnt, Llc Induction-coupled plasma synthesis of boron nitride nanotubes
TWI513839B (zh) * 2013-12-12 2015-12-21 Nat Inst Chung Shan Science & Technology An apparatus and method for improving sublimation deposition rate
CA2945977C (en) 2014-04-24 2019-12-31 Bnnt, Llc Continuous boron nitride nanotube fibers
WO2016070179A1 (en) * 2014-11-01 2016-05-06 Bnnt, Llc Target holders, multiple-incidence angle, and multizone heating for bnnt synthesis
US10083890B2 (en) 2014-12-17 2018-09-25 Bnnt, Llc Boron nitride nanotube enhanced electrical components
CA2985795C (en) 2015-05-13 2023-11-07 Bnnt, Llc Boron nitride nanotube neutron detector
EP3297951B1 (en) 2015-05-21 2023-02-22 Bnnt, Llc Boron nitride nanotube synthesis via direct induction
EP3245313B1 (en) * 2015-07-13 2018-12-05 Applied Materials, Inc. Evaporation source.
JP7037493B2 (ja) 2016-03-08 2022-03-16 テラパワー， エルエルシー ゲッター素子およびゲッター素子の製造方法
TWI737718B (zh) 2016-04-25 2021-09-01 美商創新先進材料股份有限公司 含有瀉流源的沉積系統及相關方法
WO2018044370A2 (en) 2016-05-20 2018-03-08 Terrapower, Llc Sodium-cesium vapor trap system and method
CN207038182U (zh) 2017-03-29 2018-02-23 泰拉能源有限责任公司 铯收集器
JP7078462B2 (ja) * 2018-06-13 2022-05-31 株式会社アルバック 真空蒸着装置用の蒸着源
WO2019239192A1 (en) * 2018-06-15 2019-12-19 Arcelormittal Vacuum deposition facility and method for coating a substrate
US11626213B2 (en) 2019-08-23 2023-04-11 Terrapower, Llc Sodium vaporizer and methods
WO2021077100A1 (en) * 2019-10-17 2021-04-22 Veeco Instruments Inc. Molecular beam epitaxy systems with variable substrate-to-source arrangements
US12480853B2 (en) * 2021-09-28 2025-11-25 University Of Central Florida Research Foundation, Inc. Crucibles for thermogravimetric analysis (TGA)
WO2024006828A1 (en) * 2022-06-28 2024-01-04 Cornell University Reduction of surface oxidation in molecular beam epitaxy sources
CN119085320B (zh) * 2024-11-06 2025-05-02 苏州焜原光电有限公司 一种测温坩埚组件及测温方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US464680A (en) * 1891-12-08 Wind-wheel
FR1164034A (fr) * 1956-12-27 1958-10-06 Perfectionnements aux creusets pour le dépôt de couches métallisées
US3467583A (en) * 1966-05-16 1969-09-16 Camin Lab Process for making a hollow body with protective inner layer for high-temperature applications
US4035460A (en) * 1972-05-16 1977-07-12 Siemens Aktiengesellschaft Shaped bodies and production of semiconductor material
US4217855A (en) * 1974-10-23 1980-08-19 Futaba Denshi Kogyo K.K. Vaporized-metal cluster ion source and ionized-cluster beam deposition device
USD282894S (en) 1983-10-11 1986-03-11 General Foods Corporation Cruet
USD295145S (en) 1984-09-17 1988-04-12 Maison Paul Jeanjean Carafe
US4646680A (en) * 1985-12-23 1987-03-03 General Electric Company Crucible for use in molecular beam epitaxial processing
FR2598721B1 (fr) * 1986-05-15 1988-09-30 Commissariat Energie Atomique Cellule pour epitaxie par jets moleculaires et procede associe
JPS6353259A (ja) * 1986-08-22 1988-03-07 Mitsubishi Electric Corp 薄膜形成方法
US4856457A (en) * 1987-02-20 1989-08-15 Hughes Aircraft Company Cluster source for nonvolatile species, having independent temperature control
US4833319A (en) * 1987-02-27 1989-05-23 Hughes Aircraft Company Carrier gas cluster source for thermally conditioned clusters
JPH01153595A (ja) * 1987-12-09 1989-06-15 Nec Corp 分子線発生装置
US5034604A (en) * 1989-08-29 1991-07-23 Board Of Regents, The University Of Texas System Refractory effusion cell to generate a reproducible, uniform and ultra-pure molecular beam of elemental molecules, utilizing reduced thermal gradient filament construction
JP2619068B2 (ja) * 1989-09-08 1997-06-11 三菱電機株式会社 薄膜形成装置
US5032366A (en) * 1990-04-30 1991-07-16 Union Carbide Coatings Service Technology Corporation Boron nitride boat and process for producing it
US5158750A (en) * 1990-06-06 1992-10-27 Praxair S.T. Technology, Inc. Boron nitride crucible
JPH04274316A (ja) * 1991-02-28 1992-09-30 Mitsubishi Electric Corp 分子線エピタキシー用セル
JPH05294787A (ja) * 1992-04-22 1993-11-09 Mitsubishi Electric Corp 結晶成長方法及びその装置
DE4225169C2 (de) * 1992-07-30 1994-09-22 Juergen Dipl Phys Dr Gspann Vorrichtung und Verfahren zur Erzeugung von Agglomeratstrahlen
US5453233A (en) * 1993-04-05 1995-09-26 Cvd, Inc. Method of producing domes of ZNS and ZNSE via a chemical vapor deposition technique
JP3369643B2 (ja) * 1993-07-01 2003-01-20 信越化学工業株式会社 熱分解窒化ほう素成形体の製造方法
JP2595894B2 (ja) * 1994-04-26 1997-04-02 日本電気株式会社 水素ラジカル発生装置

Also Published As

Publication number Publication date
JPH11504613A (ja) 1999-04-27
US5800753A (en) 1998-09-01
JP2011079736A (ja) 2011-04-21
AU5725796A (en) 1996-11-21
WO1996035091A1 (en) 1996-11-07
US5932294A (en) 1999-08-03
JP5174137B2 (ja) 2013-04-03
DE69623765D1 (de) 2002-10-24
AU5636796A (en) 1996-11-21
ATE224525T1 (de) 2002-10-15
EP0826131A4 (en) 1998-07-15
EP0826131A1 (en) 1998-03-04
US5820681A (en) 1998-10-13
EP0826131B1 (en) 2002-09-18
EP1215307A2 (en) 2002-06-19
EP1215307A3 (en) 2002-09-04
WO1996034994A1 (en) 1996-11-07

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