DE69103579T2 - Tiegel aus Bornitrid und seine Herstellung. - Google Patents

Tiegel aus Bornitrid und seine Herstellung.

Info

Publication number
DE69103579T2
DE69103579T2 DE69103579T DE69103579T DE69103579T2 DE 69103579 T2 DE69103579 T2 DE 69103579T2 DE 69103579 T DE69103579 T DE 69103579T DE 69103579 T DE69103579 T DE 69103579T DE 69103579 T2 DE69103579 T2 DE 69103579T2
Authority
DE
Germany
Prior art keywords
manufacture
boron nitride
nitride crucibles
crucibles
boron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69103579T
Other languages
English (en)
Other versions
DE69103579D1 (de
Inventor
Robert Lee Finicle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
Advanced Ceramics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Ceramics Corp filed Critical Advanced Ceramics Corp
Application granted granted Critical
Publication of DE69103579D1 publication Critical patent/DE69103579D1/de
Publication of DE69103579T2 publication Critical patent/DE69103579T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/342—Boron nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ceramic Products (AREA)
  • Chemical Vapour Deposition (AREA)
DE69103579T 1990-06-06 1991-06-05 Tiegel aus Bornitrid und seine Herstellung. Expired - Lifetime DE69103579T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/533,816 US5075055A (en) 1990-06-06 1990-06-06 Process for producing a boron nitride crucible

Publications (2)

Publication Number Publication Date
DE69103579D1 DE69103579D1 (de) 1994-09-29
DE69103579T2 true DE69103579T2 (de) 1995-02-02

Family

ID=24127556

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69103579T Expired - Lifetime DE69103579T2 (de) 1990-06-06 1991-06-05 Tiegel aus Bornitrid und seine Herstellung.

Country Status (6)

Country Link
US (1) US5075055A (de)
EP (1) EP0460943B1 (de)
JP (1) JP2520060B2 (de)
CN (1) CN1037701C (de)
DE (1) DE69103579T2 (de)
RU (1) RU2059025C1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2837049B2 (ja) * 1992-10-28 1998-12-14 信越化学工業株式会社 複層セラミックスるつぼの製造方法
US5453233A (en) * 1993-04-05 1995-09-26 Cvd, Inc. Method of producing domes of ZNS and ZNSE via a chemical vapor deposition technique
JPH07172963A (ja) * 1993-12-22 1995-07-11 Shin Etsu Chem Co Ltd 熱分解窒化ホウ素被覆複層成形体及びその製造方法
CN1039247C (zh) * 1994-09-10 1998-07-22 冶金工业部钢铁研究总院 一种涂有二硼化钛涂层的坩埚及其制造方法
JP3758755B2 (ja) * 1996-08-13 2006-03-22 信越化学工業株式会社 熱分解窒化ホウ素容器およびその製造方法
US6197391B1 (en) * 1996-11-18 2001-03-06 Shin-Etsu Chemical Co., Ltd. Pyrolytic boron nitride container and manufacture thereof
JP3212522B2 (ja) * 1996-12-27 2001-09-25 信越化学工業株式会社 分子線エピタキシー用熱分解窒化硼素るつぼ
DE19852325C1 (de) * 1998-11-12 2000-05-11 Siemens Ag Verfahren zum Erzeugen eines kontinuierlichen Dampfstromes enthaltend eine Verbindung, in der Gallium in einwertiger Form vorliegt, Verdampfungstiegel zum Verdampfen einer Substanz sowie Verwendung des Verdampfungstiegels in einer Vakuumbeschichtungsvorrichtung
JP3648703B2 (ja) * 2000-01-07 2005-05-18 株式会社日鉱マテリアルズ 化合物半導体単結晶の製造方法
KR100490537B1 (ko) 2002-07-23 2005-05-17 삼성에스디아이 주식회사 가열용기와 이를 이용한 증착장치
KR100889758B1 (ko) * 2002-09-03 2009-03-20 삼성모바일디스플레이주식회사 유기박막 형성장치의 가열용기
CN100416205C (zh) * 2006-01-04 2008-09-03 刘宏葆 一种钛及钛合金熔炼坩埚
US8747554B2 (en) * 2006-06-20 2014-06-10 Momentive Performance Materials Inc. Multi-piece ceramic crucible and method for making thereof
US20080128067A1 (en) * 2006-10-08 2008-06-05 Momentive Performance Materials Inc. Heat transfer composite, associated device and method
DE102008031587A1 (de) * 2008-07-03 2010-01-07 Eos Gmbh Electro Optical Systems Vorrichtung zum schichtweisen Herstellen eines dreidimensionalen Objekts
RU2365842C1 (ru) * 2008-08-26 2009-08-27 ЗАО "Научное и технологическое оборудование" Тигель для испарения алюминия в процессе молекулярно-пучковой эпитаксии
CN101899703B (zh) * 2010-08-06 2012-04-25 浙江碧晶科技有限公司 晶体硅锭生长及其硅原料提纯用坩埚及其制备和应用
CN104233196B (zh) * 2014-09-01 2017-04-19 京东方科技集团股份有限公司 蒸镀坩埚和蒸镀装置
CN105689032A (zh) * 2016-04-25 2016-06-22 苏州普京真空技术有限公司 一种复合保温坩埚
CN108411280A (zh) * 2018-04-04 2018-08-17 博宇（天津）半导体材料有限公司 一种多层坩埚及其制造方法
CN110016715A (zh) * 2019-03-14 2019-07-16 包头美科硅能源有限公司 一种多晶铸锭用坩埚涂层的制备方法
CN115537773B (zh) * 2022-10-08 2024-05-24 广东先导微电子科技有限公司 Pbn坩埚制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3986822A (en) * 1975-02-27 1976-10-19 Union Carbide Corporation Boron nitride crucible
US4058579A (en) * 1975-02-27 1977-11-15 Union Carbide Corporation Process for producing an improved boron nitride crucible
US4264803A (en) * 1978-01-10 1981-04-28 Union Carbide Corporation Resistance-heated pyrolytic boron nitride coated graphite boat for metal vaporization
JPS60131892A (ja) * 1983-12-19 1985-07-13 Mitsubishi Monsanto Chem Co 単結晶育成装置
JPH0688866B2 (ja) * 1985-12-24 1994-11-09 京セラ株式会社 窒化ホウ素被覆ルツボおよびその製造方法
JPS6358916A (ja) * 1986-08-29 1988-03-14 Matsushita Electric Ind Co Ltd 分子線エピタキシ−装置
JPS6428366A (en) * 1987-07-22 1989-01-30 Shimadzu Corp Crucible of vacuum deposition device

Also Published As

Publication number Publication date
CN1058091A (zh) 1992-01-22
US5075055A (en) 1991-12-24
EP0460943A1 (de) 1991-12-11
EP0460943B1 (de) 1994-08-24
JP2520060B2 (ja) 1996-07-31
RU2059025C1 (ru) 1996-04-27
JPH04231459A (ja) 1992-08-20
CN1037701C (zh) 1998-03-11
DE69103579D1 (de) 1994-09-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: GENERAL ELECTRIC CO., SCHENECTADY, N.Y., US