ATE224525T1 - Einteiliger tiegel - Google Patents

Einteiliger tiegel

Info

Publication number
ATE224525T1
ATE224525T1 AT96915496T AT96915496T ATE224525T1 AT E224525 T1 ATE224525 T1 AT E224525T1 AT 96915496 T AT96915496 T AT 96915496T AT 96915496 T AT96915496 T AT 96915496T AT E224525 T1 ATE224525 T1 AT E224525T1
Authority
AT
Austria
Prior art keywords
crucible
piece
crucificate
flux
unibody
Prior art date
Application number
AT96915496T
Other languages
English (en)
Inventor
Paul E Colombo
Robert F Donadio
Original Assignee
Applied Epi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23718594&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE224525(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Applied Epi Inc filed Critical Applied Epi Inc
Application granted granted Critical
Publication of ATE224525T1 publication Critical patent/ATE224525T1/de

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D1/00—Casings; Linings; Walls; Roofs
    • F27D1/16—Making or repairing linings increasing the durability of linings or breaking away linings
    • F27D1/1636—Repairing linings by projecting or spraying refractory materials on the lining
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/583—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/342—Boron nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B14/00—Crucible or pot furnaces
    • F27B14/08—Details peculiar to crucible or pot furnaces
    • F27B14/10—Crucibles
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B14/00—Crucible or pot furnaces
    • F27B14/08—Details peculiar to crucible or pot furnaces
    • F27B14/10—Crucibles
    • F27B2014/102—Form of the crucibles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
    • Y10T428/131—Glass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing [e.g., porcelain, brick, cement, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Structural Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Saccharide Compounds (AREA)
  • Cookers (AREA)
  • Thermally Insulated Containers For Foods (AREA)
  • Chemical Vapour Deposition (AREA)
AT96915496T 1995-05-03 1996-05-03 Einteiliger tiegel ATE224525T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/433,033 US5820681A (en) 1995-05-03 1995-05-03 Unibody crucible and effusion cell employing such a crucible
PCT/US1996/006267 WO1996035091A1 (en) 1995-05-03 1996-05-03 Unibody crucible

Publications (1)

Publication Number Publication Date
ATE224525T1 true ATE224525T1 (de) 2002-10-15

Family

ID=23718594

Family Applications (1)

Application Number Title Priority Date Filing Date
AT96915496T ATE224525T1 (de) 1995-05-03 1996-05-03 Einteiliger tiegel

Country Status (7)

Country Link
US (3) US5820681A (de)
EP (2) EP1215307A3 (de)
JP (2) JPH11504613A (de)
AT (1) ATE224525T1 (de)
AU (2) AU5725796A (de)
DE (1) DE69623765T2 (de)
WO (2) WO1996034994A1 (de)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3212522B2 (ja) * 1996-12-27 2001-09-25 信越化学工業株式会社 分子線エピタキシー用熱分解窒化硼素るつぼ
US6053981A (en) * 1998-09-15 2000-04-25 Coherent, Inc. Effusion cell and method of use in molecular beam epitaxy
US6202591B1 (en) * 1998-11-12 2001-03-20 Flex Products, Inc. Linear aperture deposition apparatus and coating process
US6140624A (en) * 1999-07-02 2000-10-31 Advanced Ceramics Corporation Pyrolytic boron nitride radiation heater
AU2001227824A1 (en) * 2000-01-12 2001-07-24 Applied Epi, Inc. Ultra-low temperature effusion cell
JP2001220286A (ja) 2000-02-02 2001-08-14 Sharp Corp 分子線源および分子線エピタキシ装置
US7194197B1 (en) * 2000-03-16 2007-03-20 Global Solar Energy, Inc. Nozzle-based, vapor-phase, plume delivery structure for use in production of thin-film deposition layer
US6551405B1 (en) * 2000-09-22 2003-04-22 The Board Of Trustees Of The University Of Arkansas Tool and method for in situ vapor phase deposition source material reloading and maintenance
DE10056686B4 (de) * 2000-11-15 2005-09-29 Forschungsverbund Berlin E.V. Verdampferzelle und ein Verfahren zur Herstellung von Aufdampfschichten
JP2003002778A (ja) * 2001-06-26 2003-01-08 International Manufacturing & Engineering Services Co Ltd 薄膜堆積用分子線セル
US6926920B2 (en) * 2002-06-11 2005-08-09 Taiwan Semiconductor Manufacturing Co., Ltd Chemical vapor deposition (CVD) calibration method providing enhanced uniformity
JP4344631B2 (ja) * 2004-03-02 2009-10-14 長州産業株式会社 有機物薄膜堆積用分子線源
US20050232824A1 (en) * 2004-04-14 2005-10-20 Pangrcic Robert A High temperature electrolyte testing container
US20050229856A1 (en) * 2004-04-20 2005-10-20 Malik Roger J Means and method for a liquid metal evaporation source with integral level sensor and external reservoir
US7493691B2 (en) * 2004-05-20 2009-02-24 Honeywell International Inc. Co-molding metallic-lined phenolic components
JP4442558B2 (ja) * 2005-01-06 2010-03-31 三星モバイルディスプレイ株式會社 蒸発源の加熱制御方法，蒸発源の冷却制御方法および蒸発源の制御方法
JP5009816B2 (ja) * 2005-02-22 2012-08-22 イー−サイエンス，インコーポレイテッド 流出セルバルブ
US7732737B2 (en) * 2005-10-11 2010-06-08 Kimberly-Clark Worldwide, Inc. Micro powered warming container
JP4673190B2 (ja) * 2005-11-01 2011-04-20 長州産業株式会社 薄膜堆積用分子線源とその分子線量制御方法
US20070218199A1 (en) * 2006-02-13 2007-09-20 Veeco Instruments Inc. Crucible eliminating line of sight between a source material and a target
US8747554B2 (en) * 2006-06-20 2014-06-10 Momentive Performance Materials Inc. Multi-piece ceramic crucible and method for making thereof
EP1967606A1 (de) * 2007-03-08 2008-09-10 Applied Materials, Inc. Verdampfungstiegel und Verdampfungsvorrichtung mit angepasster Verdampfungscharakteristik
US20090169781A1 (en) * 2007-12-31 2009-07-02 Marc Schaepkens Low thermal conductivity low density pyrolytic boron nitride material, method of making, and articles made therefrom
US7968353B2 (en) 2008-04-15 2011-06-28 Global Solar Energy, Inc. Apparatus and methods for manufacturing thin-film solar cells
WO2010019213A2 (en) * 2008-08-11 2010-02-18 Veeco Instruments Inc. Vacuum deposition sources having heated effusion orifices
US8512806B2 (en) * 2008-08-12 2013-08-20 Momentive Performance Materials Inc. Large volume evaporation source
US20100282167A1 (en) * 2008-12-18 2010-11-11 Veeco Instruments Inc. Linear Deposition Source
WO2011065999A1 (en) * 2008-12-18 2011-06-03 Veeco Instruments Inc. Linear deposition source
US20100159132A1 (en) * 2008-12-18 2010-06-24 Veeco Instruments, Inc. Linear Deposition Source
US9062369B2 (en) * 2009-03-25 2015-06-23 Veeco Instruments, Inc. Deposition of high vapor pressure materials
WO2011082179A1 (en) * 2009-12-28 2011-07-07 Global Solar Energy, Inc. Apparatus and methods of mixing and depositing thin film photovoltaic compositions
TWI477646B (zh) * 2010-08-09 2015-03-21 Hon Hai Prec Ind Co Ltd 化學氣相沉積設備
JP5720379B2 (ja) 2011-03-31 2015-05-20 日本電気株式会社 水流発電装置
DE102011121148A1 (de) * 2011-12-15 2013-06-20 Dr. Eberl Mbe-Komponenten Gmbh Vorrichtung zum Verdampfen eines Verdampfungsguts
DE102011122591A1 (de) * 2011-12-30 2013-07-04 Dr. Eberl Mbe-Komponenten Gmbh Vorrichtung zum Verdampfen eines Verdampfungsguts
US10343908B2 (en) 2013-11-01 2019-07-09 Bnnt, Llc Induction-coupled plasma synthesis of boron nitrade nanotubes
TWI513839B (zh) * 2013-12-12 2015-12-21 Nat Inst Chung Shan Science & Technology An apparatus and method for improving sublimation deposition rate
CA2945977C (en) 2014-04-24 2019-12-31 Bnnt, Llc Continuous boron nitride nanotube fibers
CA2968358C (en) 2014-11-01 2022-10-18 Bnnt, Llc Target holders, multiple-incidence angle, and multizone heating for bnnt synthesis
US10083890B2 (en) 2014-12-17 2018-09-25 Bnnt, Llc Boron nitride nanotube enhanced electrical components
EP3295216B1 (de) 2015-05-13 2022-10-12 Bnnt, Llc Bornitrid-nanoröhren-neutronendetektor
EP3297951B1 (de) 2015-05-21 2023-02-22 Bnnt, Llc Bornitrid-nanoröhrensynthese durch direkte induktion
KR102045384B1 (ko) * 2015-07-13 2019-11-15 어플라이드 머티어리얼스, 인코포레이티드 증발 소스
KR102340575B1 (ko) 2016-03-08 2021-12-21 테라파워, 엘엘씨 핵분열 생성물 게터
TWI737718B (zh) 2016-04-25 2021-09-01 美商創新先進材料股份有限公司 含有瀉流源的沉積系統及相關方法
CN109074883A (zh) 2016-05-20 2018-12-21 泰拉能源公司 钠-铯蒸气阱系统和方法
CN207038182U (zh) 2017-03-29 2018-02-23 泰拉能源有限责任公司 铯收集器
JP7078462B2 (ja) * 2018-06-13 2022-05-31 株式会社アルバック 真空蒸着装置用の蒸着源
WO2019239192A1 (en) * 2018-06-15 2019-12-19 Arcelormittal Vacuum deposition facility and method for coating a substrate
KR20220051165A (ko) * 2019-08-23 2022-04-26 테라파워, 엘엘씨 나트륨 기화기 및 나트륨 기화기의 사용 방법
TW202129092A (zh) * 2019-10-17 2021-08-01 美商維克儀器公司 具有可變之基板對來源(substrate-to-source)配置的分子束磊晶系統
WO2024006828A1 (en) * 2022-06-28 2024-01-04 Cornell University Reduction of surface oxidation in molecular beam epitaxy sources

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US464680A (en) * 1891-12-08 Wind-wheel
FR1164034A (fr) * 1956-12-27 1958-10-06 Perfectionnements aux creusets pour le dépôt de couches métallisées
US3467583A (en) * 1966-05-16 1969-09-16 Camin Lab Process for making a hollow body with protective inner layer for high-temperature applications
US4035460A (en) * 1972-05-16 1977-07-12 Siemens Aktiengesellschaft Shaped bodies and production of semiconductor material
US4217855A (en) * 1974-10-23 1980-08-19 Futaba Denshi Kogyo K.K. Vaporized-metal cluster ion source and ionized-cluster beam deposition device
US4646680A (en) * 1985-12-23 1987-03-03 General Electric Company Crucible for use in molecular beam epitaxial processing
FR2598721B1 (fr) * 1986-05-15 1988-09-30 Commissariat Energie Atomique Cellule pour epitaxie par jets moleculaires et procede associe
JPS6353259A (ja) * 1986-08-22 1988-03-07 Mitsubishi Electric Corp 薄膜形成方法
US4856457A (en) * 1987-02-20 1989-08-15 Hughes Aircraft Company Cluster source for nonvolatile species, having independent temperature control
US4833319A (en) * 1987-02-27 1989-05-23 Hughes Aircraft Company Carrier gas cluster source for thermally conditioned clusters
JPH01153595A (ja) * 1987-12-09 1989-06-15 Nec Corp 分子線発生装置
US5034604A (en) * 1989-08-29 1991-07-23 Board Of Regents, The University Of Texas System Refractory effusion cell to generate a reproducible, uniform and ultra-pure molecular beam of elemental molecules, utilizing reduced thermal gradient filament construction
JP2619068B2 (ja) * 1989-09-08 1997-06-11 三菱電機株式会社 薄膜形成装置
US5032366A (en) * 1990-04-30 1991-07-16 Union Carbide Coatings Service Technology Corporation Boron nitride boat and process for producing it
US5158750A (en) * 1990-06-06 1992-10-27 Praxair S.T. Technology, Inc. Boron nitride crucible
JPH04274316A (ja) * 1991-02-28 1992-09-30 Mitsubishi Electric Corp 分子線エピタキシー用セル
JPH05294787A (ja) * 1992-04-22 1993-11-09 Mitsubishi Electric Corp 結晶成長方法及びその装置
DE4225169C2 (de) * 1992-07-30 1994-09-22 Juergen Dipl Phys Dr Gspann Vorrichtung und Verfahren zur Erzeugung von Agglomeratstrahlen
US5453233A (en) * 1993-04-05 1995-09-26 Cvd, Inc. Method of producing domes of ZNS and ZNSE via a chemical vapor deposition technique
JP3369643B2 (ja) * 1993-07-01 2003-01-20 信越化学工業株式会社 熱分解窒化ほう素成形体の製造方法
JP2595894B2 (ja) * 1994-04-26 1997-04-02 日本電気株式会社 水素ラジカル発生装置

Also Published As

Publication number Publication date
DE69623765D1 (de) 2002-10-24
DE69623765T2 (de) 2003-07-17
JP2011079736A (ja) 2011-04-21
JPH11504613A (ja) 1999-04-27
WO1996035091A1 (en) 1996-11-07
EP0826131B1 (de) 2002-09-18
WO1996034994A1 (en) 1996-11-07
EP1215307A2 (de) 2002-06-19
EP0826131A4 (de) 1998-07-15
US5932294A (en) 1999-08-03
AU5636796A (en) 1996-11-21
JP5174137B2 (ja) 2013-04-03
EP1215307A3 (de) 2002-09-04
AU5725796A (en) 1996-11-21
EP0826131A1 (de) 1998-03-04
US5820681A (en) 1998-10-13
US5800753A (en) 1998-09-01

Similar Documents

Publication Publication Date Title
ATE224525T1 (de) Einteiliger tiegel
TW339493B (en) A closely attached image sensor
ATE161618T1 (de) Ausrichtbare haltevorrichtung
DK1524316T3 (da) Fremgangsm de til bestemmelse af bakteriers tilbäjelighed til opläst oxygenustabilitet
CS650083A2 (en) Herbicidni prostredek a zpusob vyroby ucinne slozky
FR2713018B1 (fr) Procédé pour l'établissement de contacts sur des piles solaires à couches minces.
IT1264516B1 (it) Cellule dendritiche immortalizzate
DE69015997T2 (de) Fernsehfilmabtaster abgeglichen für negativabtastung.
FR2676288B1 (fr) Collecteur d'eclairage pour projecteur.
ES8501750A1 (es) Un procedimiento para la preparacion de 4-aril-4-piperidincarbinoles.
CS773683A2 (en) Herbicidni prostredek a zpusob vyroby ucinnych latek
DE69614454T2 (de) Verbesserungen an Rücksacken
JPS5328431A (en) Copier
DE69637243D1 (de) Atelocollagen enthaltende gen-zusammensetzungen
TW269729B (en) A rack and a tank for a photographic processing apparatus
ATE120424T1 (de) Rohrpostbüchse.
ATE97087T1 (de) Kontaktlinsenbehaelter.
EP0382189A3 (de) Bildfixiergerät
DE69227442D1 (de) Magnetische elektronenlinse und Elektronenmikroskop unter Verwendung derselbe.
EP1143395A3 (de) Überwachungsanlage zur Überwachung des Verkehrs im Bereich von Wechselverkehrszeichen
ATE219512T1 (de) Rinderovarzellinie (frov) zur virusvermehrung
JPS57186728A (en) Lens for copying machine
JPS6419339A (en) Feeding code for illumination unit of image forming device
AU7049396A (en) 2-amino-6-chloropurine and method for preparing the same
IT1248182B (it) Dispositivo per il condizionamento di filato in spola

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties