DE69622261D1 - Verfahren zur herstellung einer struktur unter verwendung von wiederablagerung - Google Patents
Verfahren zur herstellung einer struktur unter verwendung von wiederablagerungInfo
- Publication number
- DE69622261D1 DE69622261D1 DE69622261T DE69622261T DE69622261D1 DE 69622261 D1 DE69622261 D1 DE 69622261D1 DE 69622261 T DE69622261 T DE 69622261T DE 69622261 T DE69622261 T DE 69622261T DE 69622261 D1 DE69622261 D1 DE 69622261D1
- Authority
- DE
- Germany
- Prior art keywords
- redisposal
- producing
- image
- conductive layer
- redepositing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32131—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Compounds Of Unknown Constitution (AREA)
- Steroid Compounds (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Electrophotography Using Other Than Carlson'S Method (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US39594195A | 1995-02-28 | 1995-02-28 | |
PCT/US1996/002413 WO1996027208A1 (en) | 1995-02-28 | 1996-02-21 | Method for forming a structure using redeposition |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69622261D1 true DE69622261D1 (de) | 2002-08-14 |
DE69622261T2 DE69622261T2 (de) | 2003-03-27 |
Family
ID=23565182
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69622261T Expired - Lifetime DE69622261T2 (de) | 1995-02-28 | 1996-02-21 | Verfahren zur herstellung einer struktur unter verwendung von wiederablagerung |
Country Status (7)
Country | Link |
---|---|
US (1) | US5792593A (de) |
EP (2) | EP1202331A3 (de) |
JP (1) | JP3101685B2 (de) |
KR (1) | KR100271111B1 (de) |
AT (1) | ATE220478T1 (de) |
DE (1) | DE69622261T2 (de) |
WO (1) | WO1996027208A1 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0865079A3 (de) * | 1997-03-13 | 1999-10-20 | Applied Materials, Inc. | Verfahren zur Beseitigung von auf geätzten Platinflächen abgelagerten Verunreinigungen |
US6027860A (en) | 1997-08-13 | 2000-02-22 | Micron Technology, Inc. | Method for forming a structure using redeposition of etchable layer |
TW430900B (en) * | 1997-09-08 | 2001-04-21 | Siemens Ag | Method for producing structures having a high aspect ratio |
US6919168B2 (en) | 1998-01-13 | 2005-07-19 | Applied Materials, Inc. | Masking methods and etching sequences for patterning electrodes of high density RAM capacitors |
US6265318B1 (en) * | 1998-01-13 | 2001-07-24 | Applied Materials, Inc. | Iridium etchant methods for anisotropic profile |
WO1999036956A1 (en) | 1998-01-13 | 1999-07-22 | Applied Materials, Inc. | Etching methods for anisotropic platinum profile |
US6323132B1 (en) | 1998-01-13 | 2001-11-27 | Applied Materials, Inc. | Etching methods for anisotropic platinum profile |
TW434907B (en) * | 1998-12-09 | 2001-05-16 | Matsushita Electronics Corp | Semiconductor memory apparatus and its manufacturing method |
US6294836B1 (en) * | 1998-12-22 | 2001-09-25 | Cvc Products Inc. | Semiconductor chip interconnect barrier material and fabrication method |
DE19911150C1 (de) * | 1999-03-12 | 2000-04-20 | Siemens Ag | Verfahren zur Herstellung einer mikroelektronischen Struktur |
US6358857B1 (en) | 1999-07-23 | 2002-03-19 | Micron Technology, Inc. | Methods of etching insulative materials, of forming electrical devices, and of forming capacitors |
WO2001018859A1 (en) | 1999-09-10 | 2001-03-15 | Unaxis Usa Inc. | Magnetic pole fabrication process and device |
US6547975B1 (en) * | 1999-10-29 | 2003-04-15 | Unaxis Usa Inc. | Magnetic pole fabrication process and device |
US6627995B2 (en) | 2000-03-03 | 2003-09-30 | Cvc Products, Inc. | Microelectronic interconnect material with adhesion promotion layer and fabrication method |
US6444263B1 (en) | 2000-09-15 | 2002-09-03 | Cvc Products, Inc. | Method of chemical-vapor deposition of a material |
US6533408B1 (en) | 2001-06-21 | 2003-03-18 | Eastman Kodak Company | Ink jet printing method |
DE10147929C1 (de) | 2001-09-28 | 2003-04-17 | Infineon Technologies Ag | Verfahren zum Herstellen einer Halbleiterstruktur und Verwendung des Verfahrens |
KR100438781B1 (ko) * | 2001-12-05 | 2004-07-05 | 삼성전자주식회사 | 금속-절연체-금속 캐패시터 및 그 제조방법 |
KR101934037B1 (ko) | 2012-11-21 | 2018-12-31 | 삼성전자주식회사 | 서포터를 갖는 반도체 소자 및 그 형성 방법 |
CN113745402B (zh) * | 2020-05-29 | 2023-10-17 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法、存储器 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4432132A (en) * | 1981-12-07 | 1984-02-21 | Bell Telephone Laboratories, Incorporated | Formation of sidewall oxide layers by reactive oxygen ion etching to define submicron features |
US4400257A (en) * | 1982-12-21 | 1983-08-23 | Rca Corporation | Method of forming metal lines |
JPS63211740A (ja) * | 1987-02-27 | 1988-09-02 | Oki Electric Ind Co Ltd | 半導体素子の配線パタ−ン形成方法 |
US5185058A (en) * | 1991-01-29 | 1993-02-09 | Micron Technology, Inc. | Process for etching semiconductor devices |
TW243541B (de) * | 1991-08-31 | 1995-03-21 | Samsung Electronics Co Ltd | |
JP2953220B2 (ja) * | 1992-10-30 | 1999-09-27 | 日本電気株式会社 | 半導体装置の製造方法 |
KR960006822B1 (ko) * | 1993-04-15 | 1996-05-23 | 삼성전자주식회사 | 반도체장치의 미세패턴 형성방법 |
US5320981A (en) * | 1993-08-10 | 1994-06-14 | Micron Semiconductor, Inc. | High accuracy via formation for semiconductor devices |
US5451543A (en) * | 1994-04-25 | 1995-09-19 | Motorola, Inc. | Straight sidewall profile contact opening to underlying interconnect and method for making the same |
-
1996
- 1996-02-21 KR KR1019970706000A patent/KR100271111B1/ko not_active IP Right Cessation
- 1996-02-21 EP EP01204492A patent/EP1202331A3/de not_active Withdrawn
- 1996-02-21 EP EP96905568A patent/EP0812472B1/de not_active Expired - Lifetime
- 1996-02-21 DE DE69622261T patent/DE69622261T2/de not_active Expired - Lifetime
- 1996-02-21 JP JP08526340A patent/JP3101685B2/ja not_active Expired - Fee Related
- 1996-02-21 AT AT96905568T patent/ATE220478T1/de not_active IP Right Cessation
- 1996-02-21 WO PCT/US1996/002413 patent/WO1996027208A1/en active IP Right Grant
-
1997
- 1997-08-13 US US08/905,785 patent/US5792593A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0812472B1 (de) | 2002-07-10 |
KR100271111B1 (ko) | 2000-12-01 |
US5792593A (en) | 1998-08-11 |
EP1202331A2 (de) | 2002-05-02 |
ATE220478T1 (de) | 2002-07-15 |
KR19980702594A (ko) | 1998-07-15 |
EP1202331A3 (de) | 2002-07-31 |
DE69622261T2 (de) | 2003-03-27 |
EP0812472A1 (de) | 1997-12-17 |
JPH10507037A (ja) | 1998-07-07 |
JP3101685B2 (ja) | 2000-10-23 |
WO1996027208A1 (en) | 1996-09-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69622261T2 (de) | Verfahren zur herstellung einer struktur unter verwendung von wiederablagerung | |
ATE175500T1 (de) | Herstellung und benutzung einer siebdruckschablone mit erhöhten kanten | |
ATE233657T1 (de) | Verfahren zur herstellung eines reissverschlusselements | |
DE69125233D1 (de) | Verfahren zur Herstellung von gedruckten Schaltungen | |
DE3787203T3 (de) | Verfahren zur Herstellung eines Farbbildes. | |
DE60034515D1 (de) | Flachdruckplattenvorläufer und Verfahren zur Herstellung einer Flachdruckplatte | |
DE69324439T2 (de) | Bilderzeugungsverfahren zur Herstellung von Photo-Resistmustern | |
DE3682718D1 (de) | Verfahren zur herstellung einer oberflaechenschicht durch elektrische entladungen. | |
ATE216507T1 (de) | Verfahren zur herstellung einer siebdruckschablone | |
DE59301849D1 (de) | Verfahren zur Herstellung von Substraten mit Durchführungen | |
DE3886841D1 (de) | Verfahren zur Herstellung einer Lichtmodulationsvorrichtung. | |
DE69211308D1 (de) | Verfahren zur Herstellung einer Oberflächenschicht durch elektrische Entladungen | |
DE3750775D1 (de) | Verfahren zur Herstellung von Halbtonbildern. | |
DE69515571T2 (de) | Verfahren zur Herstellung eines mit einer feinstrukturierten Nesa-Glas-Membrane beschichteten Glassubstrats | |
DE3481224D1 (de) | Integrierter photoraster zur herstellung einer halbtonreproduktionsdruckplatte von einer photographie. | |
DE69328530D1 (de) | Verfahren zur Herstellung von einer Intraokular-Linse aus Polyimidpulver | |
DE69107167D1 (de) | Verfahren zur Herstellung einer Lichtkontrollplatte. | |
DE69118936D1 (de) | Verfahren zur Herstellung einer Bildstruktur | |
ATE123355T1 (de) | Zusammengesetzte grüne keramische schicht. | |
DE59010547D1 (de) | Verfahren zur Herstellung einer negativ arbeitenden lichtempfindlichen Druckform | |
DE59402310D1 (de) | Vorrichtung zur Herstellung einer Siebdruckschablone | |
DE68922214D1 (de) | Elektrostatisches Verfahren zur Herstellung von Mehrfarbenbildern aus einem einzigen Tonerbad. | |
ATE146785T1 (de) | Verfahren zur herstellung von diltiazem | |
ATE195461T1 (de) | Verfahren zur herstellung von mit einem mehrfarbendruck versehenen frontfolien für folientastaturen | |
DE3681347D1 (de) | Verfahren zur herstellung eines direkt positiven farbbildes. |