DE69620688D1 - Zweitorspeicherzelle mit hoher Dichte - Google Patents

Zweitorspeicherzelle mit hoher Dichte

Info

Publication number
DE69620688D1
DE69620688D1 DE69620688T DE69620688T DE69620688D1 DE 69620688 D1 DE69620688 D1 DE 69620688D1 DE 69620688 T DE69620688 T DE 69620688T DE 69620688 T DE69620688 T DE 69620688T DE 69620688 D1 DE69620688 D1 DE 69620688D1
Authority
DE
Germany
Prior art keywords
memory cell
high density
port memory
port
density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69620688T
Other languages
English (en)
Other versions
DE69620688T2 (de
Inventor
Bryan D Sheffield
John David Drummond
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69620688D1 publication Critical patent/DE69620688D1/de
Publication of DE69620688T2 publication Critical patent/DE69620688T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • G11C8/16Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
DE69620688T 1995-07-27 1996-07-29 Zweitorspeicherzelle mit hoher Dichte Expired - Lifetime DE69620688T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US159495P 1995-07-27 1995-07-27

Publications (2)

Publication Number Publication Date
DE69620688D1 true DE69620688D1 (de) 2002-05-23
DE69620688T2 DE69620688T2 (de) 2002-08-14

Family

ID=21696870

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69620688T Expired - Lifetime DE69620688T2 (de) 1995-07-27 1996-07-29 Zweitorspeicherzelle mit hoher Dichte

Country Status (5)

Country Link
EP (1) EP0756284B1 (de)
JP (1) JPH09120679A (de)
KR (1) KR100431478B1 (de)
DE (1) DE69620688T2 (de)
TW (1) TW304265B (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7295487B2 (en) * 2005-05-19 2007-11-13 Freescale Semiconductor, Inc. Storage circuit and method therefor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4377856A (en) * 1980-08-15 1983-03-22 Burroughs Corporation Static semiconductor memory with reduced components and interconnections
US4613958A (en) * 1984-06-28 1986-09-23 International Business Machines Corporation Gate array chip
JP2837682B2 (ja) * 1989-01-13 1998-12-16 株式会社日立製作所 半導体記憶装置
DE68922738T2 (de) * 1989-12-23 1996-01-25 Ibm Hochintegrierter Halbleiterspeicher mit Mehrfachzugang.
EP0473819A1 (de) * 1990-09-05 1992-03-11 International Business Machines Corporation Multiport-Speicherzelle
US5289432A (en) * 1991-04-24 1994-02-22 International Business Machines Corporation Dual-port static random access memory cell

Also Published As

Publication number Publication date
KR980011461A (ko) 1998-04-30
DE69620688T2 (de) 2002-08-14
EP0756284A2 (de) 1997-01-29
TW304265B (de) 1997-05-01
JPH09120679A (ja) 1997-05-06
KR100431478B1 (ko) 2004-08-25
EP0756284B1 (de) 2002-04-17
EP0756284A3 (de) 1997-02-12

Similar Documents

Publication Publication Date Title
DE69328342D1 (de) Halbleiterspeicherzelle
BG97381A (bg) Еднобитова запомняща клетка
DE69121760D1 (de) Halbleiterspeicherzelle
DE69316628D1 (de) Flüchtige Speicherzelle
DE69428652D1 (de) Halbleiterspeicher mit mehreren Banken
DE69121483D1 (de) Dynamische Halbleiterspeicherzelle
DE69637344D1 (de) Halbleiterspeicher
DE69524645D1 (de) Speicherzelle mit programmierbarer Antischmelzsicherungstechnologie
DE69531092D1 (de) Einseitige Simplex-Zweitorspeicherzelle
DE69215707D1 (de) Halbleiter-Speicherzelle
DE69531141D1 (de) Einseitige Zweitorspeicherzelle
DE69621985D1 (de) Speicherchiparchitektur
DE4442067B8 (de) Programmierbare Permanentspeicherzelle
DE19680964T1 (de) Speichertestgerät
GB2302748B (en) Semiconductor memory cell repair
DE69430004D1 (de) Verbindungstechnik hoher dichte
DE69616710D1 (de) Halbleiterspeicher
DE69626472D1 (de) Halbleiterspeicher mit redundanten Speicherzellen
DE19580583T1 (de) Pseudo-statische Vier-Transistor-Speicherzelle
DE69509581D1 (de) Elektrisch programmierbare Speicherzelle
DE69124010D1 (de) Halbleiterspeicherzelle
DE69606428D1 (de) Semigeflutete bleiakkumulatorenzelle
DE69316298D1 (de) Nichtflüchtige Speicherzelle
DE69403700D1 (de) Kontinuierliches Speicherzelleladegerät
DE69510126D1 (de) Prüfbare Speicheranordnung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition