DE69617341T2 - Halbleiterzündungsvorrichtung und Verfahren zum Bilden einer solchen Vorrichtung - Google Patents
Halbleiterzündungsvorrichtung und Verfahren zum Bilden einer solchen VorrichtungInfo
- Publication number
- DE69617341T2 DE69617341T2 DE69617341T DE69617341T DE69617341T2 DE 69617341 T2 DE69617341 T2 DE 69617341T2 DE 69617341 T DE69617341 T DE 69617341T DE 69617341 T DE69617341 T DE 69617341T DE 69617341 T2 DE69617341 T2 DE 69617341T2
- Authority
- DE
- Germany
- Prior art keywords
- active layer
- semiconductor
- layer
- fuse
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 42
- 238000000034 method Methods 0.000 title claims description 32
- 239000000758 substrate Substances 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 2
- 230000010354 integration Effects 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 description 12
- 239000002360 explosive Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005661 hydrophobic surface Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F42—AMMUNITION; BLASTING
- F42B—EXPLOSIVE CHARGES, e.g. FOR BLASTING, FIREWORKS, AMMUNITION
- F42B3/00—Blasting cartridges, i.e. case and explosive
- F42B3/10—Initiators therefor
- F42B3/12—Bridge initiators
- F42B3/13—Bridge initiators with semiconductive bridge
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Fuses (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9510374A FR2738334A1 (fr) | 1995-09-05 | 1995-09-05 | Dispositif allumeur a semiconducteur, pour declenchement pyrotechnique, et procede de formation d'un tel dispositif |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69617341D1 DE69617341D1 (de) | 2002-01-10 |
| DE69617341T2 true DE69617341T2 (de) | 2002-07-25 |
Family
ID=9482270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69617341T Expired - Fee Related DE69617341T2 (de) | 1995-09-05 | 1996-08-09 | Halbleiterzündungsvorrichtung und Verfahren zum Bilden einer solchen Vorrichtung |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5798475A (enExample) |
| EP (1) | EP0762073B1 (enExample) |
| JP (1) | JPH09115416A (enExample) |
| KR (1) | KR970018419A (enExample) |
| DE (1) | DE69617341T2 (enExample) |
| FR (1) | FR2738334A1 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08222710A (ja) * | 1995-02-17 | 1996-08-30 | Mitsubishi Electric Corp | 半導体装置 |
| US5847309A (en) * | 1995-08-24 | 1998-12-08 | Auburn University | Radio frequency and electrostatic discharge insensitive electro-explosive devices having non-linear resistances |
| US5992326A (en) * | 1997-01-06 | 1999-11-30 | The Ensign-Bickford Company | Voltage-protected semiconductor bridge igniter elements |
| US6199484B1 (en) * | 1997-01-06 | 2001-03-13 | The Ensign-Bickford Company | Voltage-protected semiconductor bridge igniter elements |
| DE59805957D1 (de) * | 1997-05-26 | 2002-11-21 | Conti Temic Microelectronic | Dünnschichtanzündelement für pyrotechnische wirkmassen und verfahren zu dessen herstellung |
| DE19756603C1 (de) * | 1997-12-18 | 1999-06-24 | Siemens Ag | Integrierte Schaltungsanordnung mit einem Kondensator und einem Zündelement sowie Verwendung einer solchen Schaltungsanordnung |
| DE19806915A1 (de) * | 1998-02-19 | 1999-09-02 | Bosch Gmbh Robert | Zündvorrichtung für einen Gasgenerator einer Rückhalteeinrichtung |
| DE19815928C2 (de) | 1998-04-09 | 2000-05-11 | Daimler Chrysler Ag | Halbleiterzünder mit verbesserter konstruktiver Festigkeit |
| FR2784176B1 (fr) * | 1998-10-06 | 2004-11-26 | Livbag Snc | Systeme d'initiation electro-pyrotechnique protege contre les decharges electrostatiques |
| DE10006528C2 (de) * | 2000-02-15 | 2001-12-06 | Infineon Technologies Ag | Fuseanordnung für eine Halbleitervorrichtung |
| US6772692B2 (en) * | 2000-05-24 | 2004-08-10 | Lifesparc, Inc. | Electro-explosive device with laminate bridge |
| EP1421328A4 (en) * | 2001-08-28 | 2008-10-01 | Ensign Bickford Aerospace & De | TUBE BRIDGE |
| US6774457B2 (en) * | 2001-09-13 | 2004-08-10 | Texas Instruments Incorporated | Rectangular contact used as a low voltage fuse element |
| US20050132919A1 (en) * | 2003-12-17 | 2005-06-23 | Honda Motor Co., Ltd. | Squib |
| KR100534102B1 (ko) * | 2004-04-21 | 2005-12-06 | 삼성전자주식회사 | 반도체 기억소자의 퓨즈 영역들 및 그 제조방법들 |
| CN101680734B (zh) | 2007-03-12 | 2014-04-09 | 戴诺·诺贝尔公司 | 引爆器点火保护电路 |
| JP6070858B2 (ja) * | 2013-10-24 | 2017-02-01 | 株式会社村田製作所 | 複合保護回路、複合保護素子および照明用ｌｅｄ素子 |
| WO2023095535A1 (ja) * | 2021-11-26 | 2023-06-01 | 株式会社オートネットワーク技術研究所 | 遮断装置 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2747163A1 (de) * | 1977-10-20 | 1979-04-26 | Dynamit Nobel Ag | Elektrisches anzuendelement |
| US4708060A (en) * | 1985-02-19 | 1987-11-24 | The United States Of America As Represented By The United States Department Of Energy | Semiconductor bridge (SCB) igniter |
| GB2190730B (en) | 1986-05-22 | 1990-10-24 | Detonix Close Corp | Detonator firing element |
| US4855804A (en) * | 1987-11-17 | 1989-08-08 | Motorola, Inc. | Multilayer trench isolation process and structure |
| US4843964A (en) * | 1988-02-01 | 1989-07-04 | The United States Of America As Represented By The United States Department Of Energy | Smart explosive igniter |
| US4937094A (en) * | 1988-05-26 | 1990-06-26 | Energy Conversion Devices, Inc. | Method of creating a high flux of activated species for reaction with a remotely located substrate |
| US4976200A (en) * | 1988-12-30 | 1990-12-11 | The United States Of America As Represented By The United States Department Of Energy | Tungsten bridge for the low energy ignition of explosive and energetic materials |
| US4967665A (en) * | 1989-07-24 | 1990-11-06 | The United States Of America As Represented By The Secretary Of The Navy | RF and DC desensitized electroexplosive device |
| US5094167A (en) * | 1990-03-14 | 1992-03-10 | Schlumberger Technology Corporation | Shape charge for a perforating gun including an integrated circuit detonator and wire contactor responsive to ordinary current for detonation |
| US5088329A (en) * | 1990-05-07 | 1992-02-18 | Sahagen Armen N | Piezoresistive pressure transducer |
| US5085146A (en) * | 1990-05-17 | 1992-02-04 | Auburn University | Electroexplosive device |
| US5309841A (en) * | 1991-10-08 | 1994-05-10 | Scb Technologies, Inc. | Zener diode for protection of integrated circuit explosive bridge |
| US5371378A (en) * | 1992-06-08 | 1994-12-06 | Kobe Steel Usa, Inc. | Diamond metal base/permeable base transistor and method of making same |
| US5372673A (en) * | 1993-01-25 | 1994-12-13 | Motorola, Inc. | Method for processing a layer of material while using insitu monitoring and control |
| JPH09512665A (ja) * | 1994-03-25 | 1997-12-16 | アモコ／エンロン・ソーラー | 高水素希釈低温プラズマ沈着によって製造される非晶質珪素ベースの器具の向上せしめられた安定化特性 |
-
1995
- 1995-09-05 FR FR9510374A patent/FR2738334A1/fr active Pending
-
1996
- 1996-07-29 US US08/681,780 patent/US5798475A/en not_active Expired - Fee Related
- 1996-08-09 EP EP96112874A patent/EP0762073B1/en not_active Expired - Lifetime
- 1996-08-09 DE DE69617341T patent/DE69617341T2/de not_active Expired - Fee Related
- 1996-08-29 JP JP8247214A patent/JPH09115416A/ja active Pending
- 1996-09-04 KR KR1019960038170A patent/KR970018419A/ko not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| FR2738334A1 (fr) | 1997-03-07 |
| EP0762073B1 (en) | 2001-11-28 |
| US5798475A (en) | 1998-08-25 |
| DE69617341D1 (de) | 2002-01-10 |
| JPH09115416A (ja) | 1997-05-02 |
| EP0762073A1 (en) | 1997-03-12 |
| KR970018419A (ko) | 1997-04-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8328 | Change in the person/name/address of the agent |
Free format text: SCHUMACHER & WILLSAU, PATENTANWALTSSOZIETAET, 80335 MUENCHEN |
|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: FREESCALE SEMICONDUCTOR, INC., AUSTIN, TEX., US |
|
| 8339 | Ceased/non-payment of the annual fee |