JPH09115416A - 半導体ヒューズ装置および半導体ヒューズ装置の形成方法 - Google Patents

半導体ヒューズ装置および半導体ヒューズ装置の形成方法

Info

Publication number
JPH09115416A
JPH09115416A JP8247214A JP24721496A JPH09115416A JP H09115416 A JPH09115416 A JP H09115416A JP 8247214 A JP8247214 A JP 8247214A JP 24721496 A JP24721496 A JP 24721496A JP H09115416 A JPH09115416 A JP H09115416A
Authority
JP
Japan
Prior art keywords
active layer
forming
semiconductor
fuse
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8247214A
Other languages
English (en)
Japanese (ja)
Other versions
JPH09115416A5 (enExample
Inventor
Jean Michel Reynes
ジーン・ミッシェル・レインズ
Jean Francois Allier
ジーン・フランソワ・アリーア
Jean Caillaba
ジーン・ケイラバ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Freescale Semiconducteurs France SAS
Original Assignee
Motorola Semiconducteurs SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Semiconducteurs SA filed Critical Motorola Semiconducteurs SA
Publication of JPH09115416A publication Critical patent/JPH09115416A/ja
Publication of JPH09115416A5 publication Critical patent/JPH09115416A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F42—AMMUNITION; BLASTING
    • F42B—EXPLOSIVE CHARGES, e.g. FOR BLASTING, FIREWORKS, AMMUNITION
    • F42B3/00—Blasting cartridges, i.e. case and explosive
    • F42B3/10—Initiators therefor
    • F42B3/12—Bridge initiators
    • F42B3/13—Bridge initiators with semiconductive bridge

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Fuses (AREA)
JP8247214A 1995-09-05 1996-08-29 半導体ヒューズ装置および半導体ヒューズ装置の形成方法 Pending JPH09115416A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9510374A FR2738334A1 (fr) 1995-09-05 1995-09-05 Dispositif allumeur a semiconducteur, pour declenchement pyrotechnique, et procede de formation d'un tel dispositif
FR9510374 1995-09-05

Publications (2)

Publication Number Publication Date
JPH09115416A true JPH09115416A (ja) 1997-05-02
JPH09115416A5 JPH09115416A5 (enExample) 2004-08-26

Family

ID=9482270

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8247214A Pending JPH09115416A (ja) 1995-09-05 1996-08-29 半導体ヒューズ装置および半導体ヒューズ装置の形成方法

Country Status (6)

Country Link
US (1) US5798475A (enExample)
EP (1) EP0762073B1 (enExample)
JP (1) JPH09115416A (enExample)
KR (1) KR970018419A (enExample)
DE (1) DE69617341T2 (enExample)
FR (1) FR2738334A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023095535A1 (ja) * 2021-11-26 2023-06-01 株式会社オートネットワーク技術研究所 遮断装置

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08222710A (ja) * 1995-02-17 1996-08-30 Mitsubishi Electric Corp 半導体装置
US5847309A (en) * 1995-08-24 1998-12-08 Auburn University Radio frequency and electrostatic discharge insensitive electro-explosive devices having non-linear resistances
US5992326A (en) * 1997-01-06 1999-11-30 The Ensign-Bickford Company Voltage-protected semiconductor bridge igniter elements
US6199484B1 (en) * 1997-01-06 2001-03-13 The Ensign-Bickford Company Voltage-protected semiconductor bridge igniter elements
DE59805957D1 (de) * 1997-05-26 2002-11-21 Conti Temic Microelectronic Dünnschichtanzündelement für pyrotechnische wirkmassen und verfahren zu dessen herstellung
DE19756603C1 (de) * 1997-12-18 1999-06-24 Siemens Ag Integrierte Schaltungsanordnung mit einem Kondensator und einem Zündelement sowie Verwendung einer solchen Schaltungsanordnung
DE19806915A1 (de) * 1998-02-19 1999-09-02 Bosch Gmbh Robert Zündvorrichtung für einen Gasgenerator einer Rückhalteeinrichtung
DE19815928C2 (de) 1998-04-09 2000-05-11 Daimler Chrysler Ag Halbleiterzünder mit verbesserter konstruktiver Festigkeit
FR2784176B1 (fr) * 1998-10-06 2004-11-26 Livbag Snc Systeme d'initiation electro-pyrotechnique protege contre les decharges electrostatiques
DE10006528C2 (de) * 2000-02-15 2001-12-06 Infineon Technologies Ag Fuseanordnung für eine Halbleitervorrichtung
US6772692B2 (en) * 2000-05-24 2004-08-10 Lifesparc, Inc. Electro-explosive device with laminate bridge
EP1421328A4 (en) * 2001-08-28 2008-10-01 Ensign Bickford Aerospace & De TUBE BRIDGE
US6774457B2 (en) * 2001-09-13 2004-08-10 Texas Instruments Incorporated Rectangular contact used as a low voltage fuse element
US20050132919A1 (en) * 2003-12-17 2005-06-23 Honda Motor Co., Ltd. Squib
KR100534102B1 (ko) * 2004-04-21 2005-12-06 삼성전자주식회사 반도체 기억소자의 퓨즈 영역들 및 그 제조방법들
CN101680734B (zh) 2007-03-12 2014-04-09 戴诺·诺贝尔公司 引爆器点火保护电路
JP6070858B2 (ja) * 2013-10-24 2017-02-01 株式会社村田製作所 複合保護回路、複合保護素子および照明用ｌｅｄ素子

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2747163A1 (de) * 1977-10-20 1979-04-26 Dynamit Nobel Ag Elektrisches anzuendelement
US4708060A (en) * 1985-02-19 1987-11-24 The United States Of America As Represented By The United States Department Of Energy Semiconductor bridge (SCB) igniter
GB2190730B (en) 1986-05-22 1990-10-24 Detonix Close Corp Detonator firing element
US4855804A (en) * 1987-11-17 1989-08-08 Motorola, Inc. Multilayer trench isolation process and structure
US4843964A (en) * 1988-02-01 1989-07-04 The United States Of America As Represented By The United States Department Of Energy Smart explosive igniter
US4937094A (en) * 1988-05-26 1990-06-26 Energy Conversion Devices, Inc. Method of creating a high flux of activated species for reaction with a remotely located substrate
US4976200A (en) * 1988-12-30 1990-12-11 The United States Of America As Represented By The United States Department Of Energy Tungsten bridge for the low energy ignition of explosive and energetic materials
US4967665A (en) * 1989-07-24 1990-11-06 The United States Of America As Represented By The Secretary Of The Navy RF and DC desensitized electroexplosive device
US5094167A (en) * 1990-03-14 1992-03-10 Schlumberger Technology Corporation Shape charge for a perforating gun including an integrated circuit detonator and wire contactor responsive to ordinary current for detonation
US5088329A (en) * 1990-05-07 1992-02-18 Sahagen Armen N Piezoresistive pressure transducer
US5085146A (en) * 1990-05-17 1992-02-04 Auburn University Electroexplosive device
US5309841A (en) * 1991-10-08 1994-05-10 Scb Technologies, Inc. Zener diode for protection of integrated circuit explosive bridge
US5371378A (en) * 1992-06-08 1994-12-06 Kobe Steel Usa, Inc. Diamond metal base/permeable base transistor and method of making same
US5372673A (en) * 1993-01-25 1994-12-13 Motorola, Inc. Method for processing a layer of material while using insitu monitoring and control
JPH09512665A (ja) * 1994-03-25 1997-12-16 アモコ／エンロン・ソーラー 高水素希釈低温プラズマ沈着によって製造される非晶質珪素ベースの器具の向上せしめられた安定化特性

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023095535A1 (ja) * 2021-11-26 2023-06-01 株式会社オートネットワーク技術研究所 遮断装置

Also Published As

Publication number Publication date
FR2738334A1 (fr) 1997-03-07
DE69617341T2 (de) 2002-07-25
EP0762073B1 (en) 2001-11-28
US5798475A (en) 1998-08-25
DE69617341D1 (de) 2002-01-10
EP0762073A1 (en) 1997-03-12
KR970018419A (ko) 1997-04-30

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