DE3854982T2 - Verfahren zum Versiegeln einer elektrischen Verbindung in einer Halbleiteranordnung - Google Patents

Verfahren zum Versiegeln einer elektrischen Verbindung in einer Halbleiteranordnung

Info

Publication number
DE3854982T2
DE3854982T2 DE3854982T DE3854982T DE3854982T2 DE 3854982 T2 DE3854982 T2 DE 3854982T2 DE 3854982 T DE3854982 T DE 3854982T DE 3854982 T DE3854982 T DE 3854982T DE 3854982 T2 DE3854982 T2 DE 3854982T2
Authority
DE
Germany
Prior art keywords
sealing
semiconductor device
electrical connection
electrical
connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3854982T
Other languages
English (en)
Other versions
DE3854982D1 (de
Inventor
Frank Chen
Tony William Rogers
David Edward Blackaby
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Technologies Corp
Original Assignee
United Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Technologies Corp filed Critical United Technologies Corp
Application granted granted Critical
Publication of DE3854982D1 publication Critical patent/DE3854982D1/de
Publication of DE3854982T2 publication Critical patent/DE3854982T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0077—Other packages not provided for in groups B81B7/0035 - B81B7/0074
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/64—Interconnection or interfacing through or under capping or via rear of substrate in microsensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01038—Strontium [Sr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0106—Neodymium [Nd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01067—Holmium [Ho]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01072—Hafnium [Hf]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making
    • Y10T29/435—Solid dielectric type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
DE3854982T 1987-08-06 1988-07-27 Verfahren zum Versiegeln einer elektrischen Verbindung in einer Halbleiteranordnung Expired - Fee Related DE3854982T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB878718637A GB8718637D0 (en) 1987-08-06 1987-08-06 Sealing electrical feedthrough

Publications (2)

Publication Number Publication Date
DE3854982D1 DE3854982D1 (de) 1996-03-21
DE3854982T2 true DE3854982T2 (de) 1996-06-20

Family

ID=10621912

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3854982T Expired - Fee Related DE3854982T2 (de) 1987-08-06 1988-07-27 Verfahren zum Versiegeln einer elektrischen Verbindung in einer Halbleiteranordnung

Country Status (5)

Country Link
US (2) US4849374A (de)
EP (1) EP0302654B1 (de)
DE (1) DE3854982T2 (de)
FI (1) FI883522A (de)
GB (2) GB8718637D0 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8718637D0 (en) * 1987-08-06 1987-09-09 Spectrol Reliance Ltd Sealing electrical feedthrough
JPH0623782B2 (ja) * 1988-11-15 1994-03-30 株式会社日立製作所 静電容量式加速度センサ及び半導体圧力センサ
US4996627A (en) * 1989-01-30 1991-02-26 Dresser Industries, Inc. High sensitivity miniature pressure transducer
GB2255229B (en) * 1989-12-28 1993-11-17 British Tech Group Semiconductor cavity device with electric lead
JPH05505024A (ja) * 1989-12-28 1993-07-29 ブリティッシュ・テクノロジー・グループ・リミテッド リード線を有する半導体空洞装置
EP0477600A1 (de) * 1990-09-26 1992-04-01 Siemens Aktiengesellschaft Verfahren zum Befestigen eines mit wenigstens einem Halbleiterbauelement versehenen Halbleiterkörpers auf einem Substrat
US5166097A (en) * 1990-11-26 1992-11-24 The Boeing Company Silicon wafers containing conductive feedthroughs
US5155061A (en) * 1991-06-03 1992-10-13 Allied-Signal Inc. Method for fabricating a silicon pressure sensor incorporating silicon-on-insulator structures
FR2701564B1 (fr) * 1993-02-12 1995-05-19 Suisse Electronique Microtech Capteur de mesure de pression absolue de type capacitif et procédé de fabrication d'une pluralité de tels capteurs.
JP3383081B2 (ja) * 1994-07-12 2003-03-04 三菱電機株式会社 陽極接合法を用いて製造した電子部品及び電子部品の製造方法
US6484585B1 (en) 1995-02-28 2002-11-26 Rosemount Inc. Pressure sensor for a pressure transmitter
US5637802A (en) * 1995-02-28 1997-06-10 Rosemount Inc. Capacitive pressure sensor for a pressure transmitted where electric field emanates substantially from back sides of plates
GB2334141A (en) * 1998-01-30 1999-08-11 Northern Telecom Ltd Semiconductor device packaging
EP1101079B1 (de) 1998-07-07 2003-09-10 THE GOODYEAR TIRE & RUBBER COMPANY Kapazitive auswerteschaltung mit zwei ausgängen
US6520020B1 (en) 2000-01-06 2003-02-18 Rosemount Inc. Method and apparatus for a direct bonded isolated pressure sensor
US6561038B2 (en) 2000-01-06 2003-05-13 Rosemount Inc. Sensor with fluid isolation barrier
US6508129B1 (en) 2000-01-06 2003-01-21 Rosemount Inc. Pressure sensor capsule with improved isolation
US6516671B2 (en) 2000-01-06 2003-02-11 Rosemount Inc. Grain growth of electrical interconnection for microelectromechanical systems (MEMS)
US6505516B1 (en) 2000-01-06 2003-01-14 Rosemount Inc. Capacitive pressure sensing with moving dielectric
JP2003022850A (ja) * 2001-07-09 2003-01-24 Tokyo Electron Ltd フィードスルーの製造方法およびフィードスルー
GB0122165D0 (en) * 2001-09-13 2001-10-31 Randox Lab Ltd Method of sealing electrodes
US20030191505A1 (en) * 2002-04-09 2003-10-09 Mark Gryzwa Magnetic structure for feedthrough filter assembly
US6848316B2 (en) * 2002-05-08 2005-02-01 Rosemount Inc. Pressure sensor assembly
US6945331B2 (en) * 2002-07-31 2005-09-20 Schlumberger Technology Corporation Multiple interventionless actuated downhole valve and method
TWI224191B (en) * 2003-05-28 2004-11-21 Au Optronics Corp Capacitive semiconductor pressure sensor
US7719854B2 (en) 2003-07-31 2010-05-18 Cardiac Pacemakers, Inc. Integrated electromagnetic interference filters and feedthroughs
US7470971B2 (en) * 2005-05-13 2008-12-30 Sarnoff Corporation Anodically bonded ultra-high-vacuum cell
US8024022B2 (en) * 2005-05-25 2011-09-20 Alfred E. Mann Foundation For Scientific Research Hermetically sealed three-dimensional electrode array
JP5537081B2 (ja) * 2009-07-28 2014-07-02 浜松ホトニクス株式会社 加工対象物切断方法
US7998777B1 (en) 2010-12-15 2011-08-16 General Electric Company Method for fabricating a sensor
US9010200B2 (en) 2012-08-06 2015-04-21 Amphenol Thermometrics, Inc. Device for measuring forces and method of making the same

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US4426673A (en) * 1976-03-12 1984-01-17 Kavlico Corporation Capacitive pressure transducer and method of making same
US4380041A (en) * 1978-09-25 1983-04-12 Motorola Inc. Capacitor pressure transducer with housing
JPS5544786A (en) * 1978-09-27 1980-03-29 Hitachi Ltd Pressure sensor
JPS5710270A (en) * 1980-06-20 1982-01-19 Hitachi Ltd Semiconductor capacitor type pressure sensor
US4345299A (en) * 1980-11-03 1982-08-17 Motorola, Inc. Capacitive pressure transducer assembly with improved output lead design
US4390925A (en) * 1981-08-26 1983-06-28 Leeds & Northrup Company Multiple-cavity variable capacitance pressure transducer
JPS5855732A (ja) * 1981-09-30 1983-04-02 Hitachi Ltd 静電容量型圧力センサ
DE3310643C2 (de) * 1983-03-24 1986-04-10 Karlheinz Dr. 7801 Schallstadt Ziegler Drucksensor
US4467394A (en) * 1983-08-29 1984-08-21 United Technologies Corporation Three plate silicon-glass-silicon capacitive pressure transducer
US4565096A (en) * 1983-12-09 1986-01-21 Rosemount Inc. Pressure transducer
US4525766A (en) * 1984-01-25 1985-06-25 Transensory Devices, Inc. Method and apparatus for forming hermetically sealed electrical feedthrough conductors
FI71015C (fi) * 1984-02-21 1986-10-27 Vaisala Oy Temperaturoberoende kapacitiv tryckgivare
FI74350C (fi) * 1984-02-21 1988-01-11 Vaisala Oy Kapacitiv absoluttryckgivare.
US4530029A (en) * 1984-03-12 1985-07-16 United Technologies Corporation Capacitive pressure sensor with low parasitic capacitance
US4578735A (en) * 1984-10-12 1986-03-25 Knecht Thomas A Pressure sensing cell using brittle diaphragm
US4625561A (en) * 1984-12-06 1986-12-02 Ford Motor Company Silicon capacitive pressure sensor and method of making
US4647133A (en) * 1985-04-18 1987-03-03 Innovus Electrical interconnect system
US4675960A (en) * 1985-12-30 1987-06-30 Motorola, Inc. Method of manufacturing an electrically variable piezoelectric hybrid capacitor
JPH0750789B2 (ja) * 1986-07-18 1995-05-31 日産自動車株式会社 半導体圧力変換装置の製造方法
US4701826A (en) * 1986-10-30 1987-10-20 Ford Motor Company High temperature pressure sensor with low parasitic capacitance
US4701424A (en) * 1986-10-30 1987-10-20 Ford Motor Company Hermetic sealing of silicon
US4773972A (en) * 1986-10-30 1988-09-27 Ford Motor Company Method of making silicon capacitive pressure sensor with glass layer between silicon wafers
FI872049A (fi) * 1987-05-08 1988-11-09 Vaisala Oy Kondensatorkonstruktion foer anvaendning vid tryckgivare.
FI84401C (fi) * 1987-05-08 1991-11-25 Vaisala Oy Kapacitiv tryckgivarkonstruktion.
GB8718637D0 (en) * 1987-08-06 1987-09-09 Spectrol Reliance Ltd Sealing electrical feedthrough
US4949581A (en) * 1989-06-15 1990-08-21 Rosemount Inc. Extended measurement capability transmitter having shared overpressure protection means

Also Published As

Publication number Publication date
FI883522A (fi) 1989-02-07
FI883522A0 (fi) 1988-07-27
GB2208754A (en) 1989-04-12
US4849374A (en) 1989-07-18
EP0302654B1 (de) 1996-02-07
US5041900A (en) 1991-08-20
EP0302654A3 (en) 1990-06-27
GB8718637D0 (en) 1987-09-09
DE3854982D1 (de) 1996-03-21
GB2208754B (en) 1990-12-19
GB8817915D0 (en) 1988-09-01
EP0302654A2 (de) 1989-02-08

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