DE69616004T2 - Verbesserte Maskierungsverfahren bei der Halbleiterproduktion - Google Patents

Verbesserte Maskierungsverfahren bei der Halbleiterproduktion

Info

Publication number
DE69616004T2
DE69616004T2 DE69616004T DE69616004T DE69616004T2 DE 69616004 T2 DE69616004 T2 DE 69616004T2 DE 69616004 T DE69616004 T DE 69616004T DE 69616004 T DE69616004 T DE 69616004T DE 69616004 T2 DE69616004 T2 DE 69616004T2
Authority
DE
Germany
Prior art keywords
semiconductor devices
mask
manufacture
substrate
surfaces during
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69616004T
Other languages
German (de)
English (en)
Other versions
DE69616004D1 (de
Inventor
Herbert Goronkin
Kumar Shiralagi
Raymond Tsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of DE69616004D1 publication Critical patent/DE69616004D1/de
Publication of DE69616004T2 publication Critical patent/DE69616004T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
DE69616004T 1996-01-05 1996-12-23 Verbesserte Maskierungsverfahren bei der Halbleiterproduktion Expired - Fee Related DE69616004T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/583,329 US5756154A (en) 1996-01-05 1996-01-05 Masking methods during semiconductor device fabrication

Publications (2)

Publication Number Publication Date
DE69616004D1 DE69616004D1 (de) 2001-11-22
DE69616004T2 true DE69616004T2 (de) 2002-06-06

Family

ID=24332655

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69616004T Expired - Fee Related DE69616004T2 (de) 1996-01-05 1996-12-23 Verbesserte Maskierungsverfahren bei der Halbleiterproduktion

Country Status (4)

Country Link
US (1) US5756154A (2)
EP (1) EP0783176B1 (2)
JP (1) JP3664287B2 (2)
DE (1) DE69616004T2 (2)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6001722A (en) * 1997-06-20 1999-12-14 Motorola, Inc. Selective metallization/deposition for semiconductor devices
WO2001040533A1 (fr) * 1999-12-01 2001-06-07 L'air Liquide Societe Anonyme A Directoire Et Conseil De Surveillance Pour L'etude Et L'exploitation Des Procedes Georges Claude Procede et installation de traitement de surface selectif
FR2801905B1 (fr) * 1999-12-03 2002-02-01 Air Liquide Procede et installation de traitement de surface selectif
AU2001287440A1 (en) * 2000-08-30 2002-03-13 National Research Council Of Canada A method for spatial distribution of chemical groups on a semiconductor surface
KR100523839B1 (ko) * 2002-10-07 2005-10-27 한국전자통신연구원 건식 리소그라피 방법 및 이를 이용한 게이트 패턴 형성방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1159593A (en) 1914-12-26 1915-11-09 Rudolph Herold Jr Marking-button for animals.
US4575919A (en) * 1984-05-24 1986-03-18 At&T Bell Laboratories Method of making heteroepitaxial ridge overgrown laser
US4702936A (en) * 1984-09-20 1987-10-27 Applied Materials Japan, Inc. Gas-phase growth process
JPH0712015B2 (ja) * 1988-11-18 1995-02-08 新技術事業団 シリコン固体表面へのパターン形成法
JPH07118522B2 (ja) * 1990-10-24 1995-12-18 インターナショナル・ビジネス・マシーンズ・コーポレイション 基板表面を酸化処理するための方法及び半導体の構造
JPH05217921A (ja) * 1991-09-13 1993-08-27 Motorola Inc 材料膜のエピタキシアル成長を行うための温度制御された処理
JP2737477B2 (ja) * 1991-09-27 1998-04-08 日本電気株式会社 半導体レーザの製造方法
US5352330A (en) * 1992-09-30 1994-10-04 Texas Instruments Incorporated Process for producing nanometer-size structures on surfaces using electron beam induced chemistry through electron stimulated desorption
US5460693A (en) * 1994-05-31 1995-10-24 Texas Instruments Incorporated Dry microlithography process
US5451425A (en) * 1994-09-13 1995-09-19 The United States Of America As Represented By The Secretary Of The Army Process for setting the frequency of a silicon microresonator

Also Published As

Publication number Publication date
EP0783176A3 (2) 1997-08-20
JP3664287B2 (ja) 2005-06-22
JPH09199499A (ja) 1997-07-31
EP0783176A2 (en) 1997-07-09
US5756154A (en) 1998-05-26
DE69616004D1 (de) 2001-11-22
EP0783176B1 (en) 2001-10-17

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Legal Events

Date Code Title Description
8328 Change in the person/name/address of the agent

Free format text: SCHUMACHER & WILLSAU, PATENTANWALTSSOZIETAET, 80335 MUENCHEN

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee