DE69610598D1 - Langwelliger,oberflächenemittierender laser mit vertikalem resonator und integrierter,vertikaler optischer pumpquelle - Google Patents

Langwelliger,oberflächenemittierender laser mit vertikalem resonator und integrierter,vertikaler optischer pumpquelle

Info

Publication number
DE69610598D1
DE69610598D1 DE69610598T DE69610598T DE69610598D1 DE 69610598 D1 DE69610598 D1 DE 69610598D1 DE 69610598 T DE69610598 T DE 69610598T DE 69610598 T DE69610598 T DE 69610598T DE 69610598 D1 DE69610598 D1 DE 69610598D1
Authority
DE
Germany
Prior art keywords
vertical
wave
integrated
long
emitting laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69610598T
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English (en)
Other versions
DE69610598T2 (de
Inventor
Vijaysekhar Jayaraman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Optical Concepts Inc
Original Assignee
Optical Concepts Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Optical Concepts Inc filed Critical Optical Concepts Inc
Publication of DE69610598D1 publication Critical patent/DE69610598D1/de
Application granted granted Critical
Publication of DE69610598T2 publication Critical patent/DE69610598T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H01S5/426—Vertically stacked cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H01S5/0216—Bonding to the substrate using an intermediate compound, e.g. a glue or solder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1017—Waveguide having a void for insertion of materials to change optical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/1838—Reflector bonded by wafer fusion or by an intermediate compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18383—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with periodic active regions at nodes or maxima of light intensity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
DE69610598T 1995-04-12 1996-03-11 Langwelliger,oberflächenemittierender laser mit vertikalem resonator und integrierter,vertikaler optischer pumpquelle Expired - Fee Related DE69610598T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/422,486 US5513204A (en) 1995-04-12 1995-04-12 Long wavelength, vertical cavity surface emitting laser with vertically integrated optical pump
PCT/US1996/002323 WO1996032766A1 (en) 1995-04-12 1996-03-11 Long wavelength, vertical cavity surface emitting laser with vertically integrated optical pump

Publications (2)

Publication Number Publication Date
DE69610598D1 true DE69610598D1 (de) 2000-11-16
DE69610598T2 DE69610598T2 (de) 2001-05-31

Family

ID=23675104

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69610598T Expired - Fee Related DE69610598T2 (de) 1995-04-12 1996-03-11 Langwelliger,oberflächenemittierender laser mit vertikalem resonator und integrierter,vertikaler optischer pumpquelle

Country Status (10)

Country Link
US (1) US5513204A (de)
EP (1) EP0765536B1 (de)
JP (1) JPH10501927A (de)
KR (1) KR100229051B1 (de)
AU (1) AU5297396A (de)
CA (1) CA2190843C (de)
DE (1) DE69610598T2 (de)
ES (1) ES2152017T3 (de)
RU (1) RU2153746C2 (de)
WO (1) WO1996032766A1 (de)

Families Citing this family (93)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5977604A (en) * 1996-03-08 1999-11-02 The Regents Of The University Of California Buried layer in a semiconductor formed by bonding
US6015980A (en) * 1996-03-08 2000-01-18 The Regents Of The University Of California Metal layered semiconductor laser
KR100189910B1 (ko) * 1996-05-15 1999-06-01 윤종용 광픽업장치
US5754578A (en) * 1996-06-24 1998-05-19 W. L. Gore & Associates, Inc. 1250-1650 nm vertical cavity surface emitting laser pumped by a 700-1050 nm vertical cavity surface emitting laser
US5946121A (en) * 1996-07-02 1999-08-31 Motorola, Inc. IrDA data link with VCSEL light source
FR2751467B1 (fr) * 1996-07-17 1998-10-02 Commissariat Energie Atomique Procede d'assemblage de deux structures et dispositif obtenu par le procede. applications aux microlasers
FR2751796B1 (fr) * 1996-07-26 1998-08-28 Commissariat Energie Atomique Microlaser soilde, a pompage optique par laser semi-conducteur a cavite verticale
US5796771A (en) * 1996-08-19 1998-08-18 The Regents Of The University Of California Miniature self-pumped monolithically integrated solid state laser
WO1998008278A1 (en) * 1996-08-21 1998-02-26 W.L. Gore & Associates, Inc. Vertical cavity surface emitting lasers using patterned wafer fusion
US6043515A (en) * 1996-09-17 2000-03-28 Kabushiki Kaisha Toshiba Optical semiconductor device
US5732103A (en) * 1996-12-09 1998-03-24 Motorola, Inc. Long wavelength VCSEL
US5914976A (en) * 1997-01-08 1999-06-22 W. L. Gore & Associates, Inc. VCSEL-based multi-wavelength transmitter and receiver modules for serial and parallel optical links
US6243407B1 (en) 1997-03-21 2001-06-05 Novalux, Inc. High power laser devices
WO1998048492A1 (en) * 1997-04-23 1998-10-29 Honeywell Inc. Electronic devices formed from pre-patterned structures that are bonded
JPH10335383A (ja) 1997-05-28 1998-12-18 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
CA2242670A1 (en) * 1997-07-14 1999-01-14 Mitel Semiconductor Ab Field modulated vertical cavity surface-emitting laser with internal optical pumping
US6148016A (en) * 1997-11-06 2000-11-14 The Regents Of The University Of California Integrated semiconductor lasers and photodetectors
FR2784795B1 (fr) * 1998-10-16 2000-12-01 Commissariat Energie Atomique Structure comportant une couche mince de materiau composee de zones conductrices et de zones isolantes et procede de fabrication d'une telle structure
GB2342773A (en) * 1998-10-17 2000-04-19 Mitel Semiconductor Ab Long wavelength vertical cavity laser with integrated short wavelength pump laser
US6314118B1 (en) * 1998-11-05 2001-11-06 Gore Enterprise Holdings, Inc. Semiconductor device with aligned oxide apertures and contact to an intervening layer
US7286585B2 (en) * 1998-12-21 2007-10-23 Finisar Corporation Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
US6922426B2 (en) 2001-12-20 2005-07-26 Finisar Corporation Vertical cavity surface emitting laser including indium in the active region
US7435660B2 (en) * 1998-12-21 2008-10-14 Finisar Corporation Migration enhanced epitaxy fabrication of active regions having quantum wells
US7257143B2 (en) * 1998-12-21 2007-08-14 Finisar Corporation Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
US7058112B2 (en) 2001-12-27 2006-06-06 Finisar Corporation Indium free vertical cavity surface emitting laser
US20030219917A1 (en) * 1998-12-21 2003-11-27 Johnson Ralph H. System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers
US7167495B2 (en) 1998-12-21 2007-01-23 Finisar Corporation Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers
US6975660B2 (en) 2001-12-27 2005-12-13 Finisar Corporation Vertical cavity surface emitting laser including indium and antimony in the active region
US7095770B2 (en) 2001-12-20 2006-08-22 Finisar Corporation Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region
US7408964B2 (en) 2001-12-20 2008-08-05 Finisar Corporation Vertical cavity surface emitting laser including indium and nitrogen in the active region
JP4062648B2 (ja) * 1998-12-25 2008-03-19 シャープ株式会社 半導体レーザ及びその製造方法
US6252896B1 (en) 1999-03-05 2001-06-26 Agilent Technologies, Inc. Long-Wavelength VCSEL using buried bragg reflectors
AU4232000A (en) * 1999-04-13 2000-11-14 Gore Enterprise Holdings, Inc. Intra-cavity optically pumped vertical cavity surface emitting laser
US6341137B1 (en) 1999-04-27 2002-01-22 Gore Enterprise Holdings, Inc. Wavelength division multiplexed array of long-wavelength vertical cavity lasers
US6577658B1 (en) * 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
AU2470301A (en) 1999-10-29 2001-05-08 E20 Communications, Inc. Modulated integrated optically pumped vertical cavity surface emitting lasers
US6424669B1 (en) 1999-10-29 2002-07-23 E20 Communications, Inc. Integrated optically pumped vertical cavity surface emitting laser
JP2001223429A (ja) * 2000-02-09 2001-08-17 Fuji Photo Film Co Ltd 半導体レーザ装置
US6445724B2 (en) * 2000-02-23 2002-09-03 Sarnoff Corporation Master oscillator vertical emission laser
KR20010107524A (ko) * 2000-05-24 2001-12-07 이형도 2파장 레이져 다이오드 및 그 제조방법
US6746777B1 (en) 2000-05-31 2004-06-08 Applied Optoelectronics, Inc. Alternative substrates for epitaxial growth
US6888871B1 (en) * 2000-07-12 2005-05-03 Princeton Optronics, Inc. VCSEL and VCSEL array having integrated microlenses for use in a semiconductor laser pumped solid state laser system
NL1015714C2 (nl) * 2000-07-14 2002-01-15 Dsm Nv Werkwijze voor het kristalliseren van enantiomeer verrijkt 2-acetylthio-3-fenylpropaanzuur.
AU2001286620A1 (en) * 2000-08-22 2002-03-04 The Regents Of The University Of California Aigaassb/inp distributed bragg reflector
US6810064B1 (en) * 2000-08-22 2004-10-26 The Regents Of The University Of California Heat spreading layers for vertical cavity surface emitting lasers
US6553051B1 (en) 2000-10-31 2003-04-22 Agilent Technologies, Inc. System for optically pumping a long wavelength laser using a short wavelength laser
US6434180B1 (en) * 2000-12-19 2002-08-13 Lucent Technologies Inc. Vertical cavity surface emitting laser (VCSEL)
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
DE60204007T2 (de) * 2001-03-15 2006-03-16 ECOLE POLYTECHNIQUE FéDéRALE DE LAUSANNE Oberflächenemittierender laser mit vertikalem resonator
US6898215B2 (en) * 2001-04-11 2005-05-24 Optical Communication Products, Inc. Long wavelength vertical cavity surface emitting laser
US6556610B1 (en) 2001-04-12 2003-04-29 E20 Communications, Inc. Semiconductor lasers
US6567454B1 (en) * 2001-05-01 2003-05-20 Sandia Corporation Coupled-resonator vertical-cavity lasers with two active gain regions
US6717964B2 (en) * 2001-07-02 2004-04-06 E20 Communications, Inc. Method and apparatus for wavelength tuning of optically pumped vertical cavity surface emitting lasers
US6714574B2 (en) 2001-07-31 2004-03-30 Bookham Technology, Plc Monolithically integrated optically-pumped edge-emitting semiconductor laser
US6671304B2 (en) 2001-08-28 2003-12-30 The United States Of America As Represented By The Secretary Of The Navy Amplitude-modulated laser for high-bandwidth communications systems
US6647050B2 (en) 2001-09-18 2003-11-11 Agilent Technologies, Inc. Flip-chip assembly for optically-pumped lasers
KR100404043B1 (ko) * 2001-10-19 2003-11-03 주식회사 비첼 수직으로 집적화된 고출력 면발광 반도체 레이저 장치 및그 제조 방법
FR2833758B1 (fr) * 2001-12-13 2004-12-10 Commissariat Energie Atomique Dispositif d'emission de lumiere a micro-cavite et procede de fabrication de ce dispositif
JP2003195125A (ja) * 2001-12-27 2003-07-09 Seiko Epson Corp 光モジュールおよび光通信システム
US6822995B2 (en) * 2002-02-21 2004-11-23 Finisar Corporation GaAs/AI(Ga)As distributed bragg reflector on InP
US7295586B2 (en) * 2002-02-21 2007-11-13 Finisar Corporation Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs
CN1653832B (zh) * 2002-05-08 2010-04-28 美商威睿电通公司 快速话务通道重连接的系统与方法
JP4157736B2 (ja) * 2002-08-09 2008-10-01 株式会社日立製作所 光送信装置
DE10243545B4 (de) * 2002-09-19 2008-05-21 Osram Opto Semiconductors Gmbh Optisch gepumpte Halbleiterlaservorrichtung
US6836495B2 (en) * 2003-05-07 2004-12-28 Eastman Kodak Company Vertical cavity laser including inorganic spacer layers
GB0315177D0 (en) * 2003-06-28 2003-08-06 Univ Heriot Watt Photoluminescent infrared source
US6790696B1 (en) * 2003-06-30 2004-09-14 Eastman Kodak Company Providing an organic vertical cavity laser array device with etched region in dielectric stack
US6947466B2 (en) * 2004-01-29 2005-09-20 Coherent, Inc. Optically pumped edge-emitting semiconductor laser
FR2870051B1 (fr) * 2004-05-04 2009-04-03 Commissariat Energie Atomique Emetteur de rayonnement avec faisceau de pompage incline
CN101432936B (zh) * 2004-10-01 2011-02-02 菲尼萨公司 具有多顶侧接触的垂直腔面发射激光器
US7860137B2 (en) * 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
US20060078031A1 (en) * 2004-10-08 2006-04-13 Govorkov Sergei V InGaN LED pumped II-VI semiconductor laser
KR100668329B1 (ko) * 2005-02-16 2007-01-12 삼성전자주식회사 변조기 내장형 광펌핑 반도체 레이저 장치
US7826511B1 (en) * 2005-03-25 2010-11-02 Hrl Laboratories, Llc Optically pumped laser with an integrated optical pump
US7266279B1 (en) 2005-03-25 2007-09-04 Hrl Laboratories, Llc Optically pumped stepped multi-well laser
KR101228108B1 (ko) * 2005-11-09 2013-01-31 삼성전자주식회사 펌프 빔 반사층을 갖는 외부 공진기형 면발광 레이저
JP4518018B2 (ja) * 2005-12-20 2010-08-04 株式会社デンソー 多波長レーザ装置
DE102006024220A1 (de) * 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
KR100829562B1 (ko) * 2006-08-25 2008-05-14 삼성전자주식회사 기판 접합 구조를 갖는 반도체 레이저 다이오드 및 그제조방법
US7433374B2 (en) * 2006-12-21 2008-10-07 Coherent, Inc. Frequency-doubled edge-emitting semiconductor lasers
DE102008017268A1 (de) * 2008-03-03 2009-09-10 Osram Opto Semiconductors Gmbh Oberflächenemittierender Halbleiterlaser mit monolithisch integriertem Pumplaser
US7940818B2 (en) * 2009-01-13 2011-05-10 The University Of Maryland, Baltimore County Passively mode locked quantum cascade lasers
JP2012526394A (ja) * 2009-05-05 2012-10-25 スリーエム イノベイティブ プロパティズ カンパニー Ｌｅｄとともに使用するための再発光半導体キャリア素子及び製造方法
US9270086B2 (en) * 2009-07-29 2016-02-23 The Regents Of The University Of Michigan Organic laser
US9755402B2 (en) 2010-06-28 2017-09-05 Iulian Basarab Petrescu-Prahova Edge emitter semiconductor laser type of device with end segments for mirrors protection
US9912118B2 (en) 2010-06-28 2018-03-06 Iulian Basarab Petrescu-Prahova Diode laser type device
CN103403986B (zh) * 2011-03-09 2016-01-27 皇家飞利浦有限公司 具有增加的效率的vcsel阵列
JP5792486B2 (ja) * 2011-03-18 2015-10-14 株式会社東芝 半導体発光素子および光結合装置
US8687201B2 (en) 2012-08-31 2014-04-01 Lightlab Imaging, Inc. Optical coherence tomography control systems and methods
WO2016195701A1 (en) * 2015-06-05 2016-12-08 Iulian Basarab Petrescu-Prahova Emitter semiconductor laser type of device
US10290994B2 (en) * 2015-10-30 2019-05-14 Canon Kabushiki Kaisha Laser device, information acquisition device, and imaging system
JP6862658B2 (ja) * 2016-02-15 2021-04-21 株式会社リコー 光増幅器、光増幅器の駆動方法及び光増幅方法
JP7334439B2 (ja) * 2019-03-25 2023-08-29 富士フイルムビジネスイノベーション株式会社 垂直共振器面発光レーザ素子アレイチップ、発光装置、光学装置および情報処理装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4906839A (en) * 1986-05-01 1990-03-06 Pencom International Corp. Hybrid surface emitting laser and detector
JPS63280484A (ja) * 1987-05-12 1988-11-17 Matsushita Electric Ind Co Ltd 半導体装置
US5115445A (en) * 1988-02-02 1992-05-19 Massachusetts Institute Of Technology Microchip laser array
US4873696A (en) * 1988-10-31 1989-10-10 The Regents Of The University Of California Surface-emitting lasers with periodic gain and a parallel driven nipi structure
US5115442A (en) * 1990-04-13 1992-05-19 At&T Bell Laboratories Top-emitting surface emitting laser structures
US5052016A (en) * 1990-05-18 1991-09-24 University Of New Mexico Resonant-periodic-gain distributed-feedback surface-emitting semiconductor laser
US5115441A (en) * 1991-01-03 1992-05-19 At&T Bell Laboratories Vertical cavity surface emmitting lasers with transparent electrodes
US5170407A (en) * 1991-10-11 1992-12-08 At&T Bell Laboratories Elimination of heterojunction band discontinuities
US5206872A (en) * 1991-11-01 1993-04-27 At&T Bell Laboratories Surface emitting laser
JPH05145173A (ja) * 1991-11-21 1993-06-11 Fuji Electric Co Ltd 半導体レーザ素子
US5212706A (en) * 1991-12-03 1993-05-18 University Of Connecticut Laser diode assembly with tunnel junctions and providing multiple beams
US5212703A (en) * 1992-02-18 1993-05-18 Eastman Kodak Company Surface emitting lasers with low resistance bragg reflectors
JP3244529B2 (ja) * 1992-04-16 2002-01-07 アジレント・テクノロジーズ・インク 面発光型第２高調波生成素子
US5343487A (en) * 1992-10-01 1994-08-30 Optical Concepts, Inc. Electrical pumping scheme for vertical-cavity surface-emitting lasers
US5345456A (en) * 1993-03-11 1994-09-06 National Research Council Of Canada Spatially addressable surface emission sum frequency device
US5363390A (en) * 1993-11-22 1994-11-08 Hewlett-Packard Company Semiconductor laser that generates second harmonic light by means of a nonlinear crystal in the laser cavity

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EP0765536A1 (de) 1997-04-02
CA2190843A1 (en) 1996-10-17
RU2153746C2 (ru) 2000-07-27
KR970703634A (ko) 1997-07-03
EP0765536B1 (de) 2000-10-11
US5513204A (en) 1996-04-30
ES2152017T3 (es) 2001-01-16
AU5297396A (en) 1996-10-30
DE69610598T2 (de) 2001-05-31
KR100229051B1 (ko) 1999-11-01
CA2190843C (en) 2000-05-16
WO1996032766A1 (en) 1996-10-17

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