DE69603566D1 - Laser mit vertikalem resonator und stromblende - Google Patents

Laser mit vertikalem resonator und stromblende

Info

Publication number
DE69603566D1
DE69603566D1 DE69603566T DE69603566T DE69603566D1 DE 69603566 D1 DE69603566 D1 DE 69603566D1 DE 69603566 T DE69603566 T DE 69603566T DE 69603566 T DE69603566 T DE 69603566T DE 69603566 D1 DE69603566 D1 DE 69603566D1
Authority
DE
Germany
Prior art keywords
laser
flow orientation
vertical resonator
resonator
vertical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69603566T
Other languages
English (en)
Other versions
DE69603566T2 (de
Inventor
Jeffrey Scott
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Optical Concepts Inc
Original Assignee
Optical Concepts Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Optical Concepts Inc filed Critical Optical Concepts Inc
Publication of DE69603566D1 publication Critical patent/DE69603566D1/de
Application granted granted Critical
Publication of DE69603566T2 publication Critical patent/DE69603566T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/1833—Position of the structure with more than one structure
    • H01S5/18333—Position of the structure with more than one structure only above the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18316—Airgap confined
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/1833—Position of the structure with more than one structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69603566T 1995-06-26 1996-06-19 Laser mit vertikalem resonator und stromblende Expired - Fee Related DE69603566T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/494,823 US5594751A (en) 1995-06-26 1995-06-26 Current-apertured vertical cavity laser
PCT/US1996/010610 WO1997001879A1 (en) 1995-06-26 1996-06-19 Current-apertured vertical-cavity laser

Publications (2)

Publication Number Publication Date
DE69603566D1 true DE69603566D1 (de) 1999-09-09
DE69603566T2 DE69603566T2 (de) 2000-05-31

Family

ID=23966130

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69603566T Expired - Fee Related DE69603566T2 (de) 1995-06-26 1996-06-19 Laser mit vertikalem resonator und stromblende

Country Status (8)

Country Link
US (2) US5594751A (de)
EP (1) EP0777924B1 (de)
JP (1) JPH10505465A (de)
KR (1) KR100229052B1 (de)
AU (1) AU6478096A (de)
DE (1) DE69603566T2 (de)
ES (1) ES2135242T3 (de)
WO (1) WO1997001879A1 (de)

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US5719891A (en) * 1995-12-18 1998-02-17 Picolight Incorporated Conductive element with lateral oxidation barrier
FR2743196B1 (fr) * 1995-12-27 1998-02-06 Alsthom Cge Alcatel Procede de fabrication d'un laser semi-conducteur a emission par la surface
FR2743195B1 (fr) * 1995-12-27 1998-02-06 Alsthom Cge Alcatel Laser semi-conducteur a emission par la surface
FR2744293B1 (fr) * 1996-01-30 1998-04-30 Nabet Bernard Composant d'emission laser a zone d'injection de largeur limitee
TW383508B (en) * 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
WO1998008278A1 (en) * 1996-08-21 1998-02-26 W.L. Gore & Associates, Inc. Vertical cavity surface emitting lasers using patterned wafer fusion
US6304588B1 (en) * 1997-02-07 2001-10-16 Xerox Corporation Method and structure for eliminating polarization instability in laterally-oxidized VCSELs
US5903588A (en) * 1997-03-06 1999-05-11 Honeywell Inc. Laser with a selectively changed current confining layer
US6243407B1 (en) * 1997-03-21 2001-06-05 Novalux, Inc. High power laser devices
US5936266A (en) * 1997-07-22 1999-08-10 The Board Of Trustees Of The University Of Illinois Semiconductor devices and methods with tunnel contact hole sources
KR100413792B1 (ko) * 1997-07-24 2004-02-14 삼성전자주식회사 질화갈륨 층과 공기층이 반복 적층된 분산브래그 반사기를구비한 단파장 면발광 반도체 레이저장치 및 그 제조 방법
JP3482824B2 (ja) * 1997-07-29 2004-01-06 セイコーエプソン株式会社 面発光型半導体レーザおよび面発光型半導体レーザアレイ
JP3783411B2 (ja) 1997-08-15 2006-06-07 富士ゼロックス株式会社 表面発光型半導体レーザ
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KR100273134B1 (ko) 1997-11-29 2001-01-15 정선종 단일모드표면방출레이저및그제조방법
US5953362A (en) * 1997-12-15 1999-09-14 Pamulapati; Jagadeesh Strain induce control of polarization states in vertical cavity surface emitting lasers and method of making same
EP1053574A4 (de) * 1997-12-29 2002-11-06 Coretek Inc Konfokaler, mikromechanisch abstimmbarer oberflächenemittierender laser mit vertikalem resonator und fabry-perot-filter
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US6668005B2 (en) 1998-01-31 2003-12-23 Klaus Streubel Pre-fusion oxidized and wafer-bonded vertical cavity laser
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US6542527B1 (en) 1998-08-27 2003-04-01 Regents Of The University Of Minnesota Vertical cavity surface emitting laser
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Also Published As

Publication number Publication date
US5879961A (en) 1999-03-09
DE69603566T2 (de) 2000-05-31
KR970703633A (ko) 1997-07-03
AU6478096A (en) 1997-01-30
EP0777924B1 (de) 1999-08-04
KR100229052B1 (ko) 1999-11-01
WO1997001879A1 (en) 1997-01-16
JPH10505465A (ja) 1998-05-26
US5594751A (en) 1997-01-14
EP0777924A1 (de) 1997-06-11
ES2135242T3 (es) 1999-10-16

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