DE69621719T2 - Kurzwelliger, oberflächenemittierender Laser mit vertikalem Resonator und Al-freiem aktiven Gebiet - Google Patents
Kurzwelliger, oberflächenemittierender Laser mit vertikalem Resonator und Al-freiem aktiven GebietInfo
- Publication number
- DE69621719T2 DE69621719T2 DE69621719T DE69621719T DE69621719T2 DE 69621719 T2 DE69621719 T2 DE 69621719T2 DE 69621719 T DE69621719 T DE 69621719T DE 69621719 T DE69621719 T DE 69621719T DE 69621719 T2 DE69621719 T2 DE 69621719T2
- Authority
- DE
- Germany
- Prior art keywords
- wave
- short
- active area
- emitting laser
- free active
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
- H01S5/3406—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation including strain compensation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/520,061 US5633886A (en) | 1995-08-28 | 1995-08-28 | Short wavelength VCSEL with Al-free active region |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69621719D1 DE69621719D1 (de) | 2002-07-18 |
DE69621719T2 true DE69621719T2 (de) | 2002-10-31 |
Family
ID=24071042
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69621719T Expired - Fee Related DE69621719T2 (de) | 1995-08-28 | 1996-08-16 | Kurzwelliger, oberflächenemittierender Laser mit vertikalem Resonator und Al-freiem aktiven Gebiet |
Country Status (6)
Country | Link |
---|---|
US (1) | US5633886A (de) |
EP (1) | EP0760545B1 (de) |
JP (1) | JPH09107153A (de) |
KR (1) | KR100440650B1 (de) |
DE (1) | DE69621719T2 (de) |
TW (1) | TW317037B (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5912913A (en) * | 1995-12-27 | 1999-06-15 | Hitachi, Ltd. | Vertical cavity surface emitting laser, optical transmitter-receiver module using the laser, and parallel processing system using the laser |
US5953362A (en) * | 1997-12-15 | 1999-09-14 | Pamulapati; Jagadeesh | Strain induce control of polarization states in vertical cavity surface emitting lasers and method of making same |
GB2333895B (en) * | 1998-01-31 | 2003-02-26 | Mitel Semiconductor Ab | Pre-fusion oxidized and wafer-bonded vertical cavity laser |
US6556553B1 (en) * | 1999-04-12 | 2003-04-29 | Intermec Ip Corp. | Method for determining when a communication device should rate shift or roam in a wireless environment |
GB2353899A (en) * | 1999-09-01 | 2001-03-07 | Sharp Kk | A quantum well semiconductor device with strained barrier layer |
JP2003283056A (ja) * | 2002-01-15 | 2003-10-03 | Sharp Corp | 半導体レーザ装置および光ディスク再生記録装置 |
JP3846367B2 (ja) | 2002-05-30 | 2006-11-15 | セイコーエプソン株式会社 | 半導体素子部材及び半導体装置並びにそれらの製造方法、電気光学装置、電子機器 |
JP2004281968A (ja) * | 2003-03-19 | 2004-10-07 | Fuji Photo Film Co Ltd | 面発光型半導体レーザ素子 |
US7684458B2 (en) | 2004-06-11 | 2010-03-23 | Ricoh Company, Ltd. | Surface-emission laser diode and fabrication process thereof |
EP1980001B1 (de) * | 2006-02-03 | 2018-04-04 | Ricoh Company, Ltd. | Oberflächenemittierende laservorrichtung |
US7693204B2 (en) | 2006-02-03 | 2010-04-06 | Ricoh Company, Ltd. | Surface-emitting laser device and surface-emitting laser array including same |
JP5224155B2 (ja) * | 2006-02-03 | 2013-07-03 | 株式会社リコー | 面発光レーザ素子、それを備えた面発光レーザアレイ、面発光レーザアレイを備えた画像形成装置、面発光レーザ素子または面発光レーザアレイを備えた光ピックアップ装置、面発光レーザ素子または面発光レーザアレイを備えた光送信モジュール、面発光レーザ素子または面発光レーザアレイを備えた光送受信モジュールおよび面発光レーザ素子または面発光レーザアレイを備えた光通信システム。 |
JP2008053353A (ja) * | 2006-08-23 | 2008-03-06 | Ricoh Co Ltd | 面発光レーザアレイ、それに用いられる面発光レーザ素子および面発光レーザアレイの製造方法 |
KR100990702B1 (ko) | 2006-08-23 | 2010-10-29 | 가부시키가이샤 리코 | 면 발광 레이저 어레이, 광학 주사 장치 및 화상 형성 장치 |
US7627017B2 (en) | 2006-08-25 | 2009-12-01 | Stc. Unm | Laser amplifier and method of making the same |
JP5748949B2 (ja) | 2008-11-20 | 2015-07-15 | 株式会社リコー | 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 |
JP2016208049A (ja) * | 2011-03-17 | 2016-12-08 | 株式会社リコー | 面発光レーザ素子、原子発振器及び面発光レーザ素子の検査方法 |
JP2012209534A (ja) * | 2011-03-17 | 2012-10-25 | Ricoh Co Ltd | 面発光レーザ素子、原子発振器及び面発光レーザ素子の検査方法 |
JP5300996B2 (ja) * | 2012-02-10 | 2013-09-25 | ローム株式会社 | 半導体レーザ素子 |
JP2013165275A (ja) * | 2013-03-12 | 2013-08-22 | Rohm Co Ltd | 半導体レーザ素子 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5012486A (en) * | 1990-04-06 | 1991-04-30 | At&T Bell Laboratories | Vertical cavity semiconductor laser with lattice-mismatched mirror stack |
US5237581A (en) * | 1990-11-14 | 1993-08-17 | Nec Corporation | Semiconductor multilayer reflector and light emitting device with the same |
US5172384A (en) * | 1991-05-03 | 1992-12-15 | Motorola, Inc. | Low threshold current laser |
JP3080831B2 (ja) * | 1994-02-03 | 2000-08-28 | 日本電気株式会社 | 多重量子井戸半導体レーザ |
US5513202A (en) * | 1994-02-25 | 1996-04-30 | Matsushita Electric Industrial Co., Ltd. | Vertical-cavity surface-emitting semiconductor laser |
US5412680A (en) * | 1994-03-18 | 1995-05-02 | Photonics Research Incorporated | Linear polarization of semiconductor laser |
US5559818A (en) * | 1994-03-24 | 1996-09-24 | Sanyo Electric Co., Ltd. | Semiconductor laser device |
US5491710A (en) * | 1994-05-05 | 1996-02-13 | Cornell Research Foundation, Inc. | Strain-compensated multiple quantum well laser structures |
US5432809A (en) * | 1994-06-15 | 1995-07-11 | Motorola, Inc. | VCSEL with Al-free cavity region |
-
1995
- 1995-08-28 US US08/520,061 patent/US5633886A/en not_active Expired - Lifetime
-
1996
- 1996-05-23 TW TW085106133A patent/TW317037B/zh active
- 1996-08-13 KR KR1019960033491A patent/KR100440650B1/ko not_active IP Right Cessation
- 1996-08-16 DE DE69621719T patent/DE69621719T2/de not_active Expired - Fee Related
- 1996-08-16 EP EP96113178A patent/EP0760545B1/de not_active Expired - Lifetime
- 1996-08-28 JP JP8247227A patent/JPH09107153A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
KR100440650B1 (ko) | 2004-10-14 |
DE69621719D1 (de) | 2002-07-18 |
EP0760545B1 (de) | 2002-06-12 |
JPH09107153A (ja) | 1997-04-22 |
TW317037B (de) | 1997-10-01 |
KR970013541A (ko) | 1997-03-29 |
EP0760545A1 (de) | 1997-03-05 |
US5633886A (en) | 1997-05-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |