DE69609361T2 - Verbindungshalbleiterphotodetektor und Verfahren zu dessen Herstellung - Google Patents

Verbindungshalbleiterphotodetektor und Verfahren zu dessen Herstellung

Info

Publication number
DE69609361T2
DE69609361T2 DE69609361T DE69609361T DE69609361T2 DE 69609361 T2 DE69609361 T2 DE 69609361T2 DE 69609361 T DE69609361 T DE 69609361T DE 69609361 T DE69609361 T DE 69609361T DE 69609361 T2 DE69609361 T2 DE 69609361T2
Authority
DE
Germany
Prior art keywords
manufacturing
same
compound semiconductor
semiconductor photodetector
photodetector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69609361T
Other languages
English (en)
Other versions
DE69609361D1 (de
Inventor
Takashi Iwasaki
Nobuhisa Tanaka
Yasuhiro Iguchi
Naoyuki Yamabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69609361D1 publication Critical patent/DE69609361D1/de
Application granted granted Critical
Publication of DE69609361T2 publication Critical patent/DE69609361T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022416—Electrodes for devices characterised by at least one potential jump barrier or surface barrier comprising ring electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69609361T 1995-01-23 1996-01-16 Verbindungshalbleiterphotodetektor und Verfahren zu dessen Herstellung Expired - Fee Related DE69609361T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7027659A JPH08204224A (ja) 1995-01-23 1995-01-23 化合物半導体受光素子及びその製造方法

Publications (2)

Publication Number Publication Date
DE69609361D1 DE69609361D1 (de) 2000-08-24
DE69609361T2 true DE69609361T2 (de) 2000-12-07

Family

ID=12227069

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69609361T Expired - Fee Related DE69609361T2 (de) 1995-01-23 1996-01-16 Verbindungshalbleiterphotodetektor und Verfahren zu dessen Herstellung

Country Status (7)

Country Link
US (1) US5910014A (de)
EP (1) EP0723301B1 (de)
JP (1) JPH08204224A (de)
KR (1) KR100227455B1 (de)
CA (1) CA2167457C (de)
DE (1) DE69609361T2 (de)
TW (1) TW295730B (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6348684B1 (en) * 1999-03-25 2002-02-19 Lucent Technologies Inc. Receiving system for free-space optical communications
US6815790B2 (en) 2003-01-10 2004-11-09 Rapiscan, Inc. Position sensing detector for the detection of light within two dimensions
US7242069B2 (en) 2003-05-05 2007-07-10 Udt Sensors, Inc. Thin wafer detectors with improved radiation damage and crosstalk characteristics
US8766392B2 (en) 2007-05-07 2014-07-01 Osi Optoelectronics, Inc. Thin active layer fishbone photodiode with a shallow N+ layer and method of manufacturing the same
US7576369B2 (en) 2005-10-25 2009-08-18 Udt Sensors, Inc. Deep diffused thin photodiodes
US7256470B2 (en) 2005-03-16 2007-08-14 Udt Sensors, Inc. Photodiode with controlled current leakage
US8519503B2 (en) 2006-06-05 2013-08-27 Osi Optoelectronics, Inc. High speed backside illuminated, front side contact photodiode array
US8035183B2 (en) 2003-05-05 2011-10-11 Udt Sensors, Inc. Photodiodes with PN junction on both front and back sides
US7709921B2 (en) 2008-08-27 2010-05-04 Udt Sensors, Inc. Photodiode and photodiode array with improved performance characteristics
US7655999B2 (en) 2006-09-15 2010-02-02 Udt Sensors, Inc. High density photodiodes
US8164151B2 (en) 2007-05-07 2012-04-24 Osi Optoelectronics, Inc. Thin active layer fishbone photodiode and method of manufacturing the same
US7279731B1 (en) 2006-05-15 2007-10-09 Udt Sensors, Inc. Edge illuminated photodiodes
US7656001B2 (en) 2006-11-01 2010-02-02 Udt Sensors, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
US7880258B2 (en) 2003-05-05 2011-02-01 Udt Sensors, Inc. Thin wafer detectors with improved radiation damage and crosstalk characteristics
US7057254B2 (en) 2003-05-05 2006-06-06 Udt Sensors, Inc. Front illuminated back side contact thin wafer detectors
US8120023B2 (en) 2006-06-05 2012-02-21 Udt Sensors, Inc. Low crosstalk, front-side illuminated, back-side contact photodiode array
US8686529B2 (en) 2010-01-19 2014-04-01 Osi Optoelectronics, Inc. Wavelength sensitive sensor photodiodes
JP2006344885A (ja) * 2005-06-10 2006-12-21 Seiko Epson Corp 受光素子およびその製造方法
JP4184371B2 (ja) * 2005-10-03 2008-11-19 日本テキサス・インスツルメンツ株式会社 半導体チップ、半導体装置およびそれらの製造方法
US9178092B2 (en) 2006-11-01 2015-11-03 Osi Optoelectronics, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
US7893464B2 (en) * 2008-03-28 2011-02-22 Jds Uniphase Corporation Semiconductor photodiode and method of manufacture thereof
US8399909B2 (en) 2009-05-12 2013-03-19 Osi Optoelectronics, Inc. Tetra-lateral position sensing detector
US8912615B2 (en) 2013-01-24 2014-12-16 Osi Optoelectronics, Inc. Shallow junction photodiode for detecting short wavelength light
WO2018198683A1 (ja) * 2017-04-27 2018-11-01 京セラ株式会社 太陽電池素子および太陽電池素子の製造方法
DE102020208748B3 (de) 2020-07-14 2021-10-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Verfahren zur Herstellung eines Halbleiterbauelementes

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5853866A (ja) * 1981-09-25 1983-03-30 Nec Corp 半導体光検出素子の製造方法
JPS6199327A (ja) * 1984-10-05 1986-05-17 Fujitsu Ltd ＩｎＰ系の化合物半導体へのＺｎ拡散方法
JPS6262566A (ja) * 1985-09-12 1987-03-19 Fujitsu Ltd 光半導体装置
JPS6423580A (en) * 1987-07-20 1989-01-26 Fujitsu Ltd Semiconductor photodetector device
JPH02159775A (ja) * 1988-12-14 1990-06-19 Toshiba Corp 半導体受光素子及びその製造方法
JP2661341B2 (ja) * 1990-07-24 1997-10-08 三菱電機株式会社 半導体受光素子
JPH04111479A (ja) * 1990-08-31 1992-04-13 Sumitomo Electric Ind Ltd 受光素子
JPH04111477A (ja) * 1990-08-31 1992-04-13 Sumitomo Electric Ind Ltd 受光素子

Also Published As

Publication number Publication date
US5910014A (en) 1999-06-08
KR100227455B1 (ko) 1999-11-01
EP0723301A2 (de) 1996-07-24
JPH08204224A (ja) 1996-08-09
DE69609361D1 (de) 2000-08-24
KR960030452A (ko) 1996-08-17
EP0723301B1 (de) 2000-07-19
CA2167457C (en) 2000-03-07
EP0723301A3 (de) 1997-05-14
TW295730B (de) 1997-01-11
CA2167457A1 (en) 1996-07-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee