DE69607531T2 - Montageelement - Google Patents

Montageelement

Info

Publication number
DE69607531T2
DE69607531T2 DE69607531T DE69607531T DE69607531T2 DE 69607531 T2 DE69607531 T2 DE 69607531T2 DE 69607531 T DE69607531 T DE 69607531T DE 69607531 T DE69607531 T DE 69607531T DE 69607531 T2 DE69607531 T2 DE 69607531T2
Authority
DE
Germany
Prior art keywords
mounting element
mounting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69607531T
Other languages
English (en)
Other versions
DE69607531D1 (de
Inventor
Mitsutoshi Hikasa
Yoshihiko Numata
Reo Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokuyama Corp
Original Assignee
Tokuyama Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=16109918&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69607531(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Tokuyama Corp filed Critical Tokuyama Corp
Application granted granted Critical
Publication of DE69607531D1 publication Critical patent/DE69607531D1/de
Publication of DE69607531T2 publication Critical patent/DE69607531T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/641Heat extraction or cooling elements characterized by the materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • H01L23/3677Wire-like or pin-like cooling fins or heat sinks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02476Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0233Mounting configuration of laser chips
    • H01S5/02345Wire-bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips
    • H01S5/02355Fixing laser chips on mounts
    • H01S5/0237Fixing laser chips on mounts by soldering
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155Manufacturing circuit on or in base
    • Y10T29/49165Manufacturing circuit on or in base by forming conductive walled aperture in base

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)
  • Led Device Packages (AREA)
  • Conductive Materials (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
DE69607531T 1995-07-18 1996-07-17 Montageelement Expired - Lifetime DE69607531T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18196295A JP3165779B2 (ja) 1995-07-18 1995-07-18 サブマウント

Publications (2)

Publication Number Publication Date
DE69607531D1 DE69607531D1 (de) 2000-05-11
DE69607531T2 true DE69607531T2 (de) 2001-01-11

Family

ID=16109918

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69607531T Expired - Lifetime DE69607531T2 (de) 1995-07-18 1996-07-17 Montageelement

Country Status (5)

Country Link
US (1) US5770821A (de)
EP (1) EP0755074B1 (de)
JP (1) JP3165779B2 (de)
KR (1) KR100379975B1 (de)
DE (1) DE69607531T2 (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008013028A1 (de) * 2008-03-07 2009-09-10 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil, Gerät zur Aufzeichnung von Bildinformation und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
EP1536466A3 (de) * 2003-11-28 2009-12-30 OSRAM Opto Semiconductors GmbH Trägerschicht für eine Halbleiterschichtenfolge und Verfahren zur Herstellung von Halbleiterchips
DE102010045783A1 (de) * 2010-09-17 2012-03-22 Osram Opto Semiconductors Gmbh Trägersubstrat für ein optoelektronisches Bauelement, Verfahren zu dessen Herstellung und optoelektronisches Bauelement

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5605856A (en) * 1995-03-14 1997-02-25 University Of North Carolina Method for designing an electronic integrated circuit with optical inputs and outputs
JP3339369B2 (ja) * 1997-05-30 2002-10-28 株式会社デンソー レーザダイオード
CA2252113A1 (en) * 1997-10-29 1999-04-29 Yoshihiko Numata Substrate and process for producing the same
JP3274647B2 (ja) 1998-05-15 2002-04-15 日本電気株式会社 光半導体素子の実装構造
JP2002100826A (ja) * 2000-09-21 2002-04-05 Toshiba Corp サブマウント材
US6636539B2 (en) * 2001-05-25 2003-10-21 Novalux, Inc. Method and apparatus for controlling thermal variations in an optical device
GB0124220D0 (en) * 2001-10-09 2001-11-28 Denselight Semiconductors Pte Thermal circuit
JP4030285B2 (ja) * 2001-10-10 2008-01-09 株式会社トクヤマ 基板及びその製造方法
US6599466B1 (en) 2002-01-16 2003-07-29 Adma Products, Inc. Manufacture of lightweight metal matrix composites with controlled structure
JP4189156B2 (ja) * 2002-02-22 2008-12-03 株式会社トクヤマ チップ貼設シート
JP3982284B2 (ja) * 2002-03-06 2007-09-26 住友電気工業株式会社 サブマウントおよび半導体装置
JP3509809B2 (ja) * 2002-04-30 2004-03-22 住友電気工業株式会社 サブマウントおよび半導体装置
WO2004007386A2 (en) * 2002-07-11 2004-01-22 Alfalight, Inc. Thermal barrier for an optical bench
JP2004356429A (ja) * 2003-05-29 2004-12-16 Sumitomo Electric Ind Ltd サブマウントおよびそれを用いた半導体装置
WO2005031882A1 (ja) 2003-09-30 2005-04-07 Kabushiki Kaisha Toshiba 発光装置
DE10351934B4 (de) * 2003-11-07 2017-07-13 Tridonic Jennersdorf Gmbh Leuchtdioden-Anordnung mit wärmeabführender Platine
JP4393187B2 (ja) 2003-12-26 2010-01-06 日本オプネクスト株式会社 半導体光素子用チップキャリア、光モジュール、及び光送受信器
JP2006100625A (ja) * 2004-09-30 2006-04-13 Tokuyama Corp ハンダ層付き基板
JP4372669B2 (ja) 2004-11-25 2009-11-25 株式会社トクヤマ 素子搭載用基板の製造方法
CN101465516B (zh) * 2009-01-09 2010-12-01 西安炬光科技有限公司 一种大功率半导体激光器及其制备方法
JP2011048256A (ja) * 2009-08-28 2011-03-10 Yazaki Corp 光コネクタ及び光トランシーバ
KR20110085481A (ko) * 2010-01-20 2011-07-27 삼성전자주식회사 적층 반도체 패키지
TWI613177B (zh) * 2011-11-16 2018-02-01 製陶技術股份有限公司 製造一基材的方法
US9563233B2 (en) * 2014-08-14 2017-02-07 Microsoft Technology Licensing, Llc Electronic device with plated electrical contact
US9042048B1 (en) 2014-09-30 2015-05-26 Western Digital (Fremont), Llc Laser-ignited reactive HAMR bonding
JP6881746B2 (ja) * 2016-04-25 2021-06-02 住友電工デバイス・イノベーション株式会社 光半導体装置
EP3565068B1 (de) * 2018-04-30 2021-02-24 FRAUNHOFER-GESELLSCHAFT zur Förderung der angewandten Forschung e.V. Thermisch abstimmbarer laser und verfahren zur herstellung solch eines lasers
EP4084239A4 (de) * 2019-12-26 2024-01-10 Nichia Corp Laserlichtquelle

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57184296A (en) * 1981-05-09 1982-11-12 Hitachi Ltd Ceramic circuit board
JPS61119051A (ja) * 1984-11-15 1986-06-06 Nec Corp 半導体装置
US4732780A (en) * 1985-09-26 1988-03-22 General Electric Company Method of making hermetic feedthrough in ceramic substrate
JPS63144588A (ja) * 1986-12-09 1988-06-16 Mitsubishi Electric Corp 半導体チツプレ−ザ用サブマウント
US5529852A (en) * 1987-01-26 1996-06-25 Sumitomo Electric Industries, Ltd. Aluminum nitride sintered body having a metallized coating layer on its surface
US4894273A (en) * 1987-05-22 1990-01-16 Ceramics Process Systems Corp. Bonding additives for refractory metallization inks
JPH0750813B2 (ja) * 1988-05-23 1995-05-31 三菱電機株式会社 半導体レーザ素子用サブマウント
US4942076A (en) * 1988-11-03 1990-07-17 Micro Substrates, Inc. Ceramic substrate with metal filled via holes for hybrid microcircuits and method of making the same
DE3838461A1 (de) * 1988-11-12 1990-05-23 Krebsoege Gmbh Sintermetall Pulvermetallurgischer werkstoff auf kupferbasis und dessen verwendung
US5229549A (en) * 1989-11-13 1993-07-20 Sumitomo Electric Industries, Ltd. Ceramic circuit board and a method of manufacturing the ceramic circuit board
US5587111A (en) * 1990-03-29 1996-12-24 Vacuum Metallurgical Co., Ltd. Metal paste, process for producing same and method of making a metallic thin film using the metal paste
US5200249A (en) * 1990-08-15 1993-04-06 W. R. Grace & Co.-Conn. Via metallization for AlN ceramic electronic package
JPH04242088A (ja) * 1991-01-16 1992-08-28 Nec Corp Icソケット
JPH0548213A (ja) * 1991-08-15 1993-02-26 Tanaka Kikinzoku Kogyo Kk 半導体レーザーのサブマウント
JP2992380B2 (ja) * 1991-08-27 1999-12-20 日本特殊陶業株式会社 ビアホールメタライズを有するセラミック焼結体の製造方法
JP2990906B2 (ja) * 1991-12-11 1999-12-13 株式会社日立製作所 半導体素子実装用ヒートシンク
US5340947A (en) * 1992-06-22 1994-08-23 Cirqon Technologies Corporation Ceramic substrates with highly conductive metal vias
JPH06112585A (ja) * 1992-09-25 1994-04-22 Tanaka Kikinzoku Kogyo Kk サブマウントの製造方法
JPH06163765A (ja) * 1992-11-27 1994-06-10 Nippon Avionics Co Ltd 窒化アルミヒートシンクおよびその製造方法
US5429670A (en) * 1993-04-26 1995-07-04 Matsushita Electric Industrial Co., Ltd. Gold paste for a ceramic circuit board
US5561322A (en) * 1994-11-09 1996-10-01 International Business Machines Corporation Semiconductor chip package with enhanced thermal conductivity

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1536466A3 (de) * 2003-11-28 2009-12-30 OSRAM Opto Semiconductors GmbH Trägerschicht für eine Halbleiterschichtenfolge und Verfahren zur Herstellung von Halbleiterchips
DE102008013028A1 (de) * 2008-03-07 2009-09-10 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil, Gerät zur Aufzeichnung von Bildinformation und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
DE102010045783A1 (de) * 2010-09-17 2012-03-22 Osram Opto Semiconductors Gmbh Trägersubstrat für ein optoelektronisches Bauelement, Verfahren zu dessen Herstellung und optoelektronisches Bauelement

Also Published As

Publication number Publication date
EP0755074B1 (de) 2000-04-05
EP0755074A3 (de) 1998-04-01
KR100379975B1 (ko) 2003-07-18
JP3165779B2 (ja) 2001-05-14
EP0755074A2 (de) 1997-01-22
DE69607531D1 (de) 2000-05-11
KR970008513A (ko) 1997-02-24
JPH0936274A (ja) 1997-02-07
US5770821A (en) 1998-06-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition