DE69525827D1 - Kondensator für integrierte Schaltung und Verfahren zu seiner Herstellung - Google Patents

Kondensator für integrierte Schaltung und Verfahren zu seiner Herstellung

Info

Publication number
DE69525827D1
DE69525827D1 DE69525827T DE69525827T DE69525827D1 DE 69525827 D1 DE69525827 D1 DE 69525827D1 DE 69525827 T DE69525827 T DE 69525827T DE 69525827 T DE69525827 T DE 69525827T DE 69525827 D1 DE69525827 D1 DE 69525827D1
Authority
DE
Germany
Prior art keywords
making
same
integrated circuit
circuit capacitor
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69525827T
Other languages
English (en)
Other versions
DE69525827T2 (de
Inventor
Yasuhiro Uemoto
Yasuhiro Shimada
Eiji Fujii
Masamichi Azuma
Koji Arita
Atsuo Inoue
Yoshihisa Nagano
Yasufumi Izutsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP06327818A external-priority patent/JP3098923B2/ja
Priority claimed from JP7194578A external-priority patent/JPH0945877A/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69525827D1 publication Critical patent/DE69525827D1/de
Publication of DE69525827T2 publication Critical patent/DE69525827T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69525827T 1994-12-28 1995-12-06 Kondensator für integrierte Schaltung und Verfahren zu seiner Herstellung Expired - Fee Related DE69525827T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP06327818A JP3098923B2 (ja) 1994-12-28 1994-12-28 半導体装置およびその製造方法
JP7194578A JPH0945877A (ja) 1995-07-31 1995-07-31 容量素子の製造方法

Publications (2)

Publication Number Publication Date
DE69525827D1 true DE69525827D1 (de) 2002-04-18
DE69525827T2 DE69525827T2 (de) 2002-11-14

Family

ID=26508587

Family Applications (3)

Application Number Title Priority Date Filing Date
DE69525827T Expired - Fee Related DE69525827T2 (de) 1994-12-28 1995-12-06 Kondensator für integrierte Schaltung und Verfahren zu seiner Herstellung
DE69531070T Expired - Lifetime DE69531070T2 (de) 1994-12-28 1995-12-06 Kondensator für einen integrierten Schaltkreis und sein Herstellungsverfahren
DE69527160T Expired - Fee Related DE69527160T2 (de) 1994-12-28 1995-12-06 Herstellungsverfahren eines Kondensators für integrierte Schaltkreise

Family Applications After (2)

Application Number Title Priority Date Filing Date
DE69531070T Expired - Lifetime DE69531070T2 (de) 1994-12-28 1995-12-06 Kondensator für einen integrierten Schaltkreis und sein Herstellungsverfahren
DE69527160T Expired - Fee Related DE69527160T2 (de) 1994-12-28 1995-12-06 Herstellungsverfahren eines Kondensators für integrierte Schaltkreise

Country Status (5)

Country Link
US (2) US5929475A (de)
EP (3) EP0971393B1 (de)
KR (1) KR960026878A (de)
CN (2) CN1075243C (de)
DE (3) DE69525827T2 (de)

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US6340827B1 (en) * 1999-01-13 2002-01-22 Agere Systems Guardian Corp. Diffusion barrier for use with high dielectric constant materials and electronic devices incorporating same
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Also Published As

Publication number Publication date
CN1075243C (zh) 2001-11-21
DE69525827T2 (de) 2002-11-14
EP0971393A1 (de) 2000-01-12
EP0971392B1 (de) 2003-06-11
CN1180465C (zh) 2004-12-15
EP0971393B1 (de) 2002-06-19
US6214660B1 (en) 2001-04-10
EP0971392A1 (de) 2000-01-12
EP0720213A3 (de) 1997-05-07
US5929475A (en) 1999-07-27
KR960026878A (ko) 1996-07-22
DE69527160T2 (de) 2002-11-28
DE69531070T2 (de) 2004-04-22
DE69527160D1 (de) 2002-07-25
CN1129354A (zh) 1996-08-21
EP0720213A2 (de) 1996-07-03
EP0720213B1 (de) 2002-03-13
DE69531070D1 (de) 2003-07-17
CN1345088A (zh) 2002-04-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee