DE69518121D1 - Verfahren zur Herstellung eines Dünnfilms eines Verbund-Metalloxid-Dielektrikums - Google Patents

Verfahren zur Herstellung eines Dünnfilms eines Verbund-Metalloxid-Dielektrikums

Info

Publication number
DE69518121D1
DE69518121D1 DE69518121T DE69518121T DE69518121D1 DE 69518121 D1 DE69518121 D1 DE 69518121D1 DE 69518121 T DE69518121 T DE 69518121T DE 69518121 T DE69518121 T DE 69518121T DE 69518121 D1 DE69518121 D1 DE 69518121D1
Authority
DE
Germany
Prior art keywords
producing
thin film
metal oxide
composite metal
oxide dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69518121T
Other languages
English (en)
Other versions
DE69518121T2 (de
Inventor
Yoshiyuki Masuda
Ryusuke Kita
Hisako Arai
Noboru Ohtani
Masayoshi Koba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE69518121D1 publication Critical patent/DE69518121D1/de
Publication of DE69518121T2 publication Critical patent/DE69518121T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1225Deposition of multilayers of inorganic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208Oxides, e.g. ceramics
    • C23C18/1216Metal oxides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125Process of deposition of the inorganic material
    • C23C18/1254Sol or sol-gel processing
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • C30B29/32Titanates; Germanates; Molybdates; Tungstates
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B5/00Single-crystal growth from gels
DE1995618121 1994-06-16 1995-05-09 Verfahren zur Herstellung eines Dünnfilms eines Verbund-Metalloxid-Dielektrikums Expired - Lifetime DE69518121T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13402694A JP3007795B2 (ja) 1994-06-16 1994-06-16 複合金属酸化物誘電体薄膜の製造方法

Publications (2)

Publication Number Publication Date
DE69518121D1 true DE69518121D1 (de) 2000-08-31
DE69518121T2 DE69518121T2 (de) 2001-03-15

Family

ID=15118647

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1995618121 Expired - Lifetime DE69518121T2 (de) 1994-06-16 1995-05-09 Verfahren zur Herstellung eines Dünnfilms eines Verbund-Metalloxid-Dielektrikums

Country Status (4)

Country Link
US (1) US5593495A (de)
EP (1) EP0687750B1 (de)
JP (1) JP3007795B2 (de)
DE (1) DE69518121T2 (de)

Families Citing this family (117)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4945786A (en) * 1986-02-14 1990-08-07 Toyoda Gosei Co., Ltd. Steering wheel
EP0716167B1 (de) * 1994-12-05 2001-02-28 Sumitomo Electric Industries, Ltd. Einkristalline-Dünnschicht aus Quarz und Verfahren zu ihrer Herstellung
JP3244391B2 (ja) * 1994-12-08 2002-01-07 財団法人国際超電導産業技術研究センター 複合基板及びそれを用いた単結晶基板の製造方法
US5955140A (en) * 1995-11-16 1999-09-21 Texas Instruments Incorporated Low volatility solvent-based method for forming thin film nanoporous aerogels on semiconductor substrates
JP3217699B2 (ja) * 1996-04-19 2001-10-09 東京応化工業株式会社 Bi系誘電体薄膜形成用塗布液及びこれを用いて形成した誘電体薄膜
JP3195265B2 (ja) * 1997-01-18 2001-08-06 東京応化工業株式会社 Bi系強誘電体薄膜形成用塗布液およびこれを用いて形成した強誘電体薄膜、強誘電体メモリ
JP3108039B2 (ja) * 1997-01-18 2000-11-13 東京応化工業株式会社 Bi系強誘電体薄膜形成用塗布液およびこれを用いて形成した強誘電体薄膜、強誘電体メモリ
JPH1154721A (ja) * 1997-07-29 1999-02-26 Nec Corp 半導体装置の製造方法および製造装置
DE69916956T2 (de) * 1998-01-19 2004-09-02 Seiko Epson Corp. Verfahren zur herstellung von dünnfilmen aus oxidischer keramik
WO2000044054A1 (fr) * 1999-01-22 2000-07-27 Kansai Research Institute Dispositif a film mince piezoelectrique, procede de production associe et tete d'enregistrement a jet d'encre
EA200200275A1 (ru) * 1999-08-24 2002-10-31 Паратек Майкровэйв, Инк. Перестраиваемые напряжением копланарные фазовращатели
KR100390952B1 (ko) * 2000-06-28 2003-07-10 주식회사 하이닉스반도체 커패시터 제조 방법
US8744384B2 (en) 2000-07-20 2014-06-03 Blackberry Limited Tunable microwave devices with auto-adjusting matching circuit
AU2001276986A1 (en) * 2000-07-20 2002-02-05 Paratek Microwave, Inc. Tunable microwave devices with auto-adjusting matching circuit
US7865154B2 (en) * 2000-07-20 2011-01-04 Paratek Microwave, Inc. Tunable microwave devices with auto-adjusting matching circuit
US8064188B2 (en) 2000-07-20 2011-11-22 Paratek Microwave, Inc. Optimized thin film capacitors
JP5093946B2 (ja) * 2001-04-27 2012-12-12 京セラ株式会社 可変容量コンデンサおよび製造方法
US6617062B2 (en) 2001-04-13 2003-09-09 Paratek Microwave, Inc. Strain-relieved tunable dielectric thin films
US6801160B2 (en) * 2001-08-27 2004-10-05 Herbert Jefferson Henderson Dynamic multi-beam antenna using dielectrically tunable phase shifters
US20050200422A1 (en) * 2001-09-20 2005-09-15 Khosro Shamsaifar Tunable filters having variable bandwidth and variable delay
EP1428289A1 (de) * 2001-09-20 2004-06-16 Paratek Microwave, Inc. Abstimmbare filter mit variabler bandbreite und variabler verzögerung
US7496329B2 (en) * 2002-03-18 2009-02-24 Paratek Microwave, Inc. RF ID tag reader utilizing a scanning antenna system and method
US20050113138A1 (en) * 2002-03-18 2005-05-26 Greg Mendolia RF ID tag reader utlizing a scanning antenna system and method
US20030176179A1 (en) * 2002-03-18 2003-09-18 Ken Hersey Wireless local area network and antenna used therein
US7187288B2 (en) * 2002-03-18 2007-03-06 Paratek Microwave, Inc. RFID tag reading system and method
US20050159187A1 (en) * 2002-03-18 2005-07-21 Greg Mendolia Antenna system and method
US7183922B2 (en) * 2002-03-18 2007-02-27 Paratek Microwave, Inc. Tracking apparatus, system and method
US6987493B2 (en) * 2002-04-15 2006-01-17 Paratek Microwave, Inc. Electronically steerable passive array antenna
US7107033B2 (en) * 2002-04-17 2006-09-12 Paratek Microwave, Inc. Smart radio incorporating Parascan® varactors embodied within an intelligent adaptive RF front end
US7429495B2 (en) 2002-08-07 2008-09-30 Chang-Feng Wan System and method of fabricating micro cavities
US6864843B2 (en) * 2002-08-15 2005-03-08 Paratek Microwave, Inc. Conformal frequency-agile tunable patch antenna
US7111520B2 (en) * 2002-08-26 2006-09-26 Gilbarco Inc. Increased sensitivity for liquid meter
US6854342B2 (en) 2002-08-26 2005-02-15 Gilbarco, Inc. Increased sensitivity for turbine flow meter
US6960546B2 (en) 2002-09-27 2005-11-01 Paratek Microwave, Inc. Dielectric composite materials including an electronically tunable dielectric phase and a calcium and oxygen-containing compound phase
KR100467555B1 (ko) * 2002-11-29 2005-01-24 한국전자통신연구원 강유전체/상유전체 바륨-스트론듐-티타늄 산화물 박막을구비하는 초고주파 가변소자
US20040224649A1 (en) * 2003-02-05 2004-11-11 Khosro Shamsaifar Electronically tunable power amplifier tuner
US20040185795A1 (en) * 2003-02-05 2004-09-23 Khosro Shamsaifar Electronically tunable RF Front End Module
US20050116797A1 (en) * 2003-02-05 2005-06-02 Khosro Shamsaifar Electronically tunable block filter
US20040227592A1 (en) 2003-02-05 2004-11-18 Chiu Luna H. Method of applying patterned metallization to block filter resonators
US7048992B2 (en) * 2003-02-05 2006-05-23 Paratek Microwave, Inc. Fabrication of Parascan tunable dielectric chips
US20040178867A1 (en) * 2003-02-05 2004-09-16 Rahman Mohammed Mahbubur LTCC based electronically tunable multilayer microstrip-stripline combline filter
US20040183626A1 (en) * 2003-02-05 2004-09-23 Qinghua Kang Electronically tunable block filter with tunable transmission zeros
US20040251991A1 (en) * 2003-02-05 2004-12-16 Rahman Mohammed Mahbubur Electronically tunable comb-ring type RF filter
US7369828B2 (en) * 2003-02-05 2008-05-06 Paratek Microwave, Inc. Electronically tunable quad-band antennas for handset applications
US6949982B2 (en) * 2003-03-06 2005-09-27 Paratek Microwave, Inc. Voltage controlled oscillators incorporating parascan R varactors
US6967540B2 (en) * 2003-03-06 2005-11-22 Paratek Microwave, Inc. Synthesizers incorporating parascan TM varactors
US8204438B2 (en) * 2003-03-14 2012-06-19 Paratek Microwave, Inc. RF ID tag reader utilizing a scanning antenna system and method
WO2004093145A2 (en) * 2003-04-11 2004-10-28 Paratek Microwave, Inc. Voltage tunable photodefinable dielectric and method of manufacture therefore
WO2004100222A2 (en) * 2003-04-30 2004-11-18 Paratek Microwave Inc. Electronically tunable rf chip packages
US7042316B2 (en) * 2003-05-01 2006-05-09 Paratek Microwave, Inc. Waveguide dielectric resonator electrically tunable filter
WO2004107499A2 (en) * 2003-05-22 2004-12-09 Paratek Microwave Inc. Wireless local area network antenna system and method of use therefore
US20060035023A1 (en) * 2003-08-07 2006-02-16 Wontae Chang Method for making a strain-relieved tunable dielectric thin film
US7019697B2 (en) * 2003-08-08 2006-03-28 Paratek Microwave, Inc. Stacked patch antenna and method of construction therefore
US7123115B2 (en) * 2003-08-08 2006-10-17 Paratek Microwave, Inc. Loaded line phase shifter having regions of higher and lower impedance
US6992638B2 (en) * 2003-09-27 2006-01-31 Paratek Microwave, Inc. High gain, steerable multiple beam antenna system
WO2005072469A2 (en) * 2004-01-28 2005-08-11 Paratek Microwave Inc. Apparatus and method operable in a wireless local area network incorporating tunable dielectric capacitors embodied within an intelligent adaptive antenna
US7268643B2 (en) 2004-01-28 2007-09-11 Paratek Microwave, Inc. Apparatus, system and method capable of radio frequency switching using tunable dielectric capacitors
US20050164647A1 (en) * 2004-01-28 2005-07-28 Khosro Shamsaifar Apparatus and method capable of utilizing a tunable antenna-duplexer combination
US20050206482A1 (en) * 2004-03-17 2005-09-22 Dutoit Nicolaas Electronically tunable switched-resonator filter bank
US7151411B2 (en) * 2004-03-17 2006-12-19 Paratek Microwave, Inc. Amplifier system and method
US20060237750A1 (en) * 2004-06-21 2006-10-26 James Oakes Field effect transistor structures
US20060006962A1 (en) * 2004-07-08 2006-01-12 Du Toit Cornelis F Phase shifters and method of manufacture therefore
US20060009185A1 (en) * 2004-07-08 2006-01-12 Khosro Shamsaifar Method and apparatus capable of interference cancellation
US20060006966A1 (en) * 2004-07-08 2006-01-12 Qinghua Kang Electronically tunable ridged waveguide cavity filter and method of manufacture therefore
US20060006961A1 (en) * 2004-07-08 2006-01-12 Sengupta L Tunable dielectric phase shifters capable of operating in a digital-analog regime
US7519340B2 (en) * 2004-07-30 2009-04-14 Paratek Microwave, Inc. Method and apparatus capable of mitigating third order inter-modulation distortion in electronic circuits
US7379711B2 (en) * 2004-07-30 2008-05-27 Paratek Microwave, Inc. Method and apparatus capable of mitigating third order inter-modulation distortion in electronic circuits
WO2006020542A2 (en) * 2004-08-13 2006-02-23 Paratek Microwave Inc. Method and apparatus with improved varactor quality factor
US20060044204A1 (en) * 2004-08-14 2006-03-02 Jeffrey Kruth Phased array antenna with steerable null
US7557055B2 (en) * 2004-09-20 2009-07-07 Paratek Microwave, Inc. Tunable low loss material composition
US7011726B1 (en) * 2004-09-27 2006-03-14 Intel Corporation Method of fabricating thin dielectric film and thin film capacitor including the dielectric film
US20060065916A1 (en) 2004-09-29 2006-03-30 Xubai Zhang Varactors and methods of manufacture and use
US7397329B2 (en) * 2004-11-02 2008-07-08 Du Toit Nicolaas D Compact tunable filter and method of operation and manufacture therefore
US20060267174A1 (en) * 2005-02-09 2006-11-30 William Macropoulos Apparatus and method using stackable substrates
US7471146B2 (en) * 2005-02-15 2008-12-30 Paratek Microwave, Inc. Optimized circuits for three dimensional packaging and methods of manufacture therefore
US20070007854A1 (en) * 2005-07-09 2007-01-11 James Oakes Ripple free tunable capacitor and method of operation and manufacture therefore
US20070007853A1 (en) * 2005-07-09 2007-01-11 Toit Nicolaas D Apparatus and method capable of a high fundamental acoustic resonance frequency and a wide resonance-free frequency range
US20070007850A1 (en) * 2005-07-09 2007-01-11 Toit Nicolaas D Apparatus and method capable of a high fundamental acoustic resonance frequency and a wide resonance-free frequency range
KR100638890B1 (ko) * 2005-10-04 2006-10-27 삼성전기주식회사 고유전성 박막용 코팅용액 및 이를 이용한 유전박막의제조방법
US9406444B2 (en) 2005-11-14 2016-08-02 Blackberry Limited Thin film capacitors
US8325097B2 (en) * 2006-01-14 2012-12-04 Research In Motion Rf, Inc. Adaptively tunable antennas and method of operation therefore
US7711337B2 (en) 2006-01-14 2010-05-04 Paratek Microwave, Inc. Adaptive impedance matching module (AIMM) control architectures
US8125399B2 (en) 2006-01-14 2012-02-28 Paratek Microwave, Inc. Adaptively tunable antennas incorporating an external probe to monitor radiated power
US20070279159A1 (en) * 2006-06-02 2007-12-06 Heinz Georg Bachmann Techniques to reduce circuit non-linear distortion
KR101275927B1 (ko) * 2006-10-10 2013-06-14 엘지디스플레이 주식회사 절연막, 이를 구비하는 박막트랜지스터 및 이들의 제조방법
US8299867B2 (en) * 2006-11-08 2012-10-30 Research In Motion Rf, Inc. Adaptive impedance matching module
US7535312B2 (en) * 2006-11-08 2009-05-19 Paratek Microwave, Inc. Adaptive impedance matching apparatus, system and method with improved dynamic range
US7714676B2 (en) 2006-11-08 2010-05-11 Paratek Microwave, Inc. Adaptive impedance matching apparatus, system and method
US7917104B2 (en) 2007-04-23 2011-03-29 Paratek Microwave, Inc. Techniques for improved adaptive impedance matching
US8213886B2 (en) 2007-05-07 2012-07-03 Paratek Microwave, Inc. Hybrid techniques for antenna retuning utilizing transmit and receive power information
US7991363B2 (en) 2007-11-14 2011-08-02 Paratek Microwave, Inc. Tuning matching circuits for transmitter and receiver bands as a function of transmitter metrics
JP5514437B2 (ja) * 2007-12-28 2014-06-04 三菱マテリアル株式会社 誘電体薄膜の製造方法。
US8112852B2 (en) * 2008-05-14 2012-02-14 Paratek Microwave, Inc. Radio frequency tunable capacitors and method of manufacturing using a sacrificial carrier substrate
US8072285B2 (en) 2008-09-24 2011-12-06 Paratek Microwave, Inc. Methods for tuning an adaptive impedance matching network with a look-up table
US8875363B2 (en) * 2008-09-25 2014-11-04 Cda Processing Limited Liability Company Thin film capacitors on metal foils and methods of manufacturing same
US8067858B2 (en) * 2008-10-14 2011-11-29 Paratek Microwave, Inc. Low-distortion voltage variable capacitor assemblies
US20100330298A1 (en) * 2009-06-30 2010-12-30 Korea Institute Of Science And Technology Fabrication Of Ferroelectric Ceramic Films Using Rapid Thermal Processing With Ultra-Violet Rays
US8472888B2 (en) 2009-08-25 2013-06-25 Research In Motion Rf, Inc. Method and apparatus for calibrating a communication device
JP5617441B2 (ja) * 2009-09-02 2014-11-05 三菱マテリアル株式会社 誘電体薄膜の形成方法及び該誘電体薄膜を有する薄膜キャパシタ
US9026062B2 (en) 2009-10-10 2015-05-05 Blackberry Limited Method and apparatus for managing operations of a communication device
US8803631B2 (en) 2010-03-22 2014-08-12 Blackberry Limited Method and apparatus for adapting a variable impedance network
EP2561621A4 (de) 2010-04-20 2016-10-05 Blackberry Ltd Verfahren und vorrichtung zur verwaltung von interferenzen in einer kommunikationsvorrichtung
US9379454B2 (en) 2010-11-08 2016-06-28 Blackberry Limited Method and apparatus for tuning antennas in a communication device
US8712340B2 (en) 2011-02-18 2014-04-29 Blackberry Limited Method and apparatus for radio antenna frequency tuning
US8655286B2 (en) 2011-02-25 2014-02-18 Blackberry Limited Method and apparatus for tuning a communication device
US8626083B2 (en) 2011-05-16 2014-01-07 Blackberry Limited Method and apparatus for tuning a communication device
US8594584B2 (en) 2011-05-16 2013-11-26 Blackberry Limited Method and apparatus for tuning a communication device
US9769826B2 (en) 2011-08-05 2017-09-19 Blackberry Limited Method and apparatus for band tuning in a communication device
US8948889B2 (en) 2012-06-01 2015-02-03 Blackberry Limited Methods and apparatus for tuning circuit components of a communication device
US9853363B2 (en) 2012-07-06 2017-12-26 Blackberry Limited Methods and apparatus to control mutual coupling between antennas
US9246223B2 (en) 2012-07-17 2016-01-26 Blackberry Limited Antenna tuning for multiband operation
US9413066B2 (en) 2012-07-19 2016-08-09 Blackberry Limited Method and apparatus for beam forming and antenna tuning in a communication device
US9350405B2 (en) 2012-07-19 2016-05-24 Blackberry Limited Method and apparatus for antenna tuning and power consumption management in a communication device
US9362891B2 (en) 2012-07-26 2016-06-07 Blackberry Limited Methods and apparatus for tuning a communication device
US9374113B2 (en) 2012-12-21 2016-06-21 Blackberry Limited Method and apparatus for adjusting the timing of radio antenna tuning
US10404295B2 (en) 2012-12-21 2019-09-03 Blackberry Limited Method and apparatus for adjusting the timing of radio antenna tuning
US9438319B2 (en) 2014-12-16 2016-09-06 Blackberry Limited Method and apparatus for antenna selection

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5241879B2 (de) * 1972-01-13 1977-10-20
JPH0818871B2 (ja) * 1986-12-17 1996-02-28 日本電装株式会社 ジルコン酸チタン酸鉛系圧電磁器の製造方法
US5112433A (en) * 1988-12-09 1992-05-12 Battelle Memorial Institute Process for producing sub-micron ceramic powders of perovskite compounds with controlled stoichiometry and particle size
EP0375594A1 (de) * 1988-12-23 1990-06-27 United Technologies Corporation Herstellung dünner ferroelektrischer Filme
US5198269A (en) * 1989-04-24 1993-03-30 Battelle Memorial Institute Process for making sol-gel deposited ferroelectric thin films insensitive to their substrates
JP2891304B2 (ja) * 1990-11-16 1999-05-17 三菱マテリアル株式会社 超高純度強誘電体薄膜
EP0489519A3 (en) * 1990-12-04 1993-05-12 Raytheon Company Sol-gel processing of piezoelectric and ferroelectric films
EP0516031A1 (de) * 1991-05-29 1992-12-02 Ramtron International Corporation Ferroelektrische Stapelspeicherzelle und Herstellungsverfahren
JP3966479B2 (ja) * 1993-04-16 2007-08-29 日本テキサス・インスツルメンツ株式会社 ゾルーゲル法による強誘電体膜の形成方法及びキャパシタの製造方法
JPH06305713A (ja) * 1993-04-16 1994-11-01 Texas Instr Japan Ltd ゾルーゲル法による強誘電体膜の形成方法及びキャパシタの製造方法、及びその原料溶液
US5409548A (en) * 1993-05-17 1995-04-25 The United States Of America As Represented By The Secretary Of The Army Ferroelectric detector array utilizing material and fabrication technique
JPH07252664A (ja) * 1994-03-14 1995-10-03 Texas Instr Japan Ltd ゾルーゲル法による強誘電体膜の形成方法、キャパシタの製造方法、その原料溶液の調製方法及びその原料溶液
US5453661A (en) * 1994-04-15 1995-09-26 Mcnc Thin film ferroelectric flat panel display devices, and methods for operating and fabricating same
JPH07294862A (ja) * 1994-04-22 1995-11-10 Sumitomo Electric Ind Ltd 酸化物誘電体薄膜およびその製造方法
US5453908A (en) * 1994-09-30 1995-09-26 Texas Instruments Incorporated Barium strontium titanate (BST) thin films by holmium donor doping

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EP0687750B1 (de) 2000-07-26
EP0687750A1 (de) 1995-12-20
DE69518121T2 (de) 2001-03-15
JP3007795B2 (ja) 2000-02-07
US5593495A (en) 1997-01-14
JPH087649A (ja) 1996-01-12

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