DE69415716D1 - Verfahren zur Herstellung eines Metalloxid-Kristalls - Google Patents

Verfahren zur Herstellung eines Metalloxid-Kristalls

Info

Publication number
DE69415716D1
DE69415716D1 DE69415716T DE69415716T DE69415716D1 DE 69415716 D1 DE69415716 D1 DE 69415716D1 DE 69415716 T DE69415716 T DE 69415716T DE 69415716 T DE69415716 T DE 69415716T DE 69415716 D1 DE69415716 D1 DE 69415716D1
Authority
DE
Germany
Prior art keywords
producing
metal oxide
oxide crystal
crystal
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69415716T
Other languages
English (en)
Other versions
DE69415716T2 (de
Inventor
Yasuji Yamada
Minoru Tagami
Masaru Nakamura
Yuh Shiohara
Shoji Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Superconductivity Technology Center
New Energy and Industrial Technology Development Organization
Original Assignee
Mitsubishi Cable Industries Ltd
International Superconductivity Technology Center
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP10857193A external-priority patent/JP3160420B2/ja
Priority claimed from JP10857093A external-priority patent/JP2933460B2/ja
Priority claimed from JP11506293A external-priority patent/JP3715330B2/ja
Application filed by Mitsubishi Cable Industries Ltd, International Superconductivity Technology Center filed Critical Mitsubishi Cable Industries Ltd
Application granted granted Critical
Publication of DE69415716D1 publication Critical patent/DE69415716D1/de
Publication of DE69415716T2 publication Critical patent/DE69415716T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/32—Seed holders, e.g. chucks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/729—Growing single crystal, e.g. epitaxy, bulk

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69415716T 1993-05-10 1994-05-09 Verfahren zur Herstellung eines Metalloxid-Kristalls Expired - Fee Related DE69415716T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10857193A JP3160420B2 (ja) 1993-05-10 1993-05-10 Ｙ１２３型結晶膜・多層膜積層体の作製方法
JP10857093A JP2933460B2 (ja) 1993-05-10 1993-05-10 酸化物系融液の保持方法
JP11506293A JP3715330B2 (ja) 1993-05-17 1993-05-17 結晶引き上げ法における種材料ホルダ

Publications (2)

Publication Number Publication Date
DE69415716D1 true DE69415716D1 (de) 1999-02-18
DE69415716T2 DE69415716T2 (de) 1999-11-04

Family

ID=27311256

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69415716T Expired - Fee Related DE69415716T2 (de) 1993-05-10 1994-05-09 Verfahren zur Herstellung eines Metalloxid-Kristalls

Country Status (3)

Country Link
US (1) US5602081A (de)
EP (1) EP0624664B1 (de)
DE (1) DE69415716T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5602081A (en) * 1993-05-10 1997-02-11 International Superconductivity Technology Center Method of preparing metal oxide crystal
US5891828A (en) * 1996-10-14 1999-04-06 Agency Of Industrial Science & Technology, Ministry Of International Trade & Industry Method of producing superconducting PrBa2 Cu3 Oy single crystal and PrBa2 Cu3 Oy superconducting device
JP3936767B2 (ja) * 1997-02-21 2007-06-27 財団法人国際超電導産業技術研究センター 酸化物結晶の作製法
JPH1121126A (ja) * 1997-07-04 1999-01-26 Sumitomo Electric Ind Ltd 酸化物超電導バルクの製造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4545849A (en) * 1983-03-03 1985-10-08 Motorola Inc. Method for control of oxygen in silicon crystals
JPS63242997A (ja) * 1987-03-31 1988-10-07 Sumitomo Electric Ind Ltd セラミツクス超電導材料の製造方法
US4956334A (en) * 1987-05-01 1990-09-11 Agency Of Industrial Science And Technology Method for preparing a single crystal of lanthanum cuprate
JP2672533B2 (ja) * 1987-12-03 1997-11-05 株式会社東芝 酸化物超電導体結晶の製造方法
JPS63310799A (ja) * 1987-06-11 1988-12-19 Toshiba Corp 酸化物超電導結晶の製造方法
JPH01148794A (ja) * 1987-12-03 1989-06-12 Toshiba Corp 酸化物超電導体結晶の製造方法
JPS63310798A (ja) * 1987-06-11 1988-12-19 Toshiba Corp 酸化物超電導素子ウェ−ハの製造方法
US5162297A (en) * 1987-06-11 1992-11-10 Kabushiki Kaisha Toshiba Liquid phase epitaxial growth of high temperature superconducting oxide wafer
JPH0818910B2 (ja) * 1987-07-21 1996-02-28 住友電気工業株式会社 酸化物超電導単結晶の製造方法
JP2651481B2 (ja) * 1987-09-21 1997-09-10 株式会社 半導体エネルギー研究所 超伝導材料の作製方法
US5268060A (en) * 1988-07-05 1993-12-07 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing oxide superconducting materials
JPH03228893A (ja) * 1990-01-30 1991-10-09 Sumitomo Metal Ind Ltd 結晶成長方法
DE4003184A1 (de) * 1990-02-03 1991-08-08 Philips Patentverwaltung Verfahren zur zuechtung von mischkristallen aus schmelzen oxidischer vielstoffsysteme
EP0477387B1 (de) * 1990-04-17 1995-11-22 Kabushiki Kaisha Komatsu Seisakusho Verfahren zur herstellung eines oxideinkristalls
FR2665462B1 (fr) * 1990-08-02 1997-08-29 Centre Nat Rech Scient Procede de cristallisation en presence de champ magnetique.
JPH04144990A (ja) * 1990-10-05 1992-05-19 Osaka Titanium Co Ltd 結晶成長方法
DE4204777A1 (de) * 1991-02-20 1992-10-08 Sumitomo Metal Ind Vorrichtung und verfahren zum zuechten von einkristallen
JPH0664995A (ja) * 1992-05-15 1994-03-08 Sony Corp ＫＴｉＯＰＯ４ 単結晶及びその製造方法
JP2740427B2 (ja) * 1992-05-25 1998-04-15 財団法人国際超電導産業技術研究センター 酸化物結晶の作製方法
US5314869A (en) * 1992-09-16 1994-05-24 The Texas A & M University System Method for forming single phase, single crystalline 2122 BCSCO superconductor thin films by liquid phase epitaxy
US5602081A (en) * 1993-05-10 1997-02-11 International Superconductivity Technology Center Method of preparing metal oxide crystal

Also Published As

Publication number Publication date
DE69415716T2 (de) 1999-11-04
EP0624664B1 (de) 1999-01-07
EP0624664A3 (de) 1995-11-15
EP0624664A2 (de) 1994-11-17
US5602081A (en) 1997-02-11

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication of lapse of patent is to be deleted
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER,

8327 Change in the person/name/address of the patent owner

Owner name: NEW ENERGY AND INDUSTRIAL TECHNOLOGY DEVELOPMENT O

Owner name: INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER,

8339 Ceased/non-payment of the annual fee