DE69513748T2 - Verfahren und Vorrichtung zum Speisen von flüssigem Rohmaterialgas - Google Patents

Verfahren und Vorrichtung zum Speisen von flüssigem Rohmaterialgas

Info

Publication number
DE69513748T2
DE69513748T2 DE69513748T DE69513748T DE69513748T2 DE 69513748 T2 DE69513748 T2 DE 69513748T2 DE 69513748 T DE69513748 T DE 69513748T DE 69513748 T DE69513748 T DE 69513748T DE 69513748 T2 DE69513748 T2 DE 69513748T2
Authority
DE
Germany
Prior art keywords
raw material
material gas
liquid raw
feeding liquid
feeding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69513748T
Other languages
English (en)
Other versions
DE69513748D1 (de
Inventor
Kyoji Oguro
Yasushi Kurosawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of DE69513748D1 publication Critical patent/DE69513748D1/de
Application granted granted Critical
Publication of DE69513748T2 publication Critical patent/DE69513748T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J4/00—Feed or outlet devices; Feed or outlet control devices
    • B01J4/008—Feed or outlet control devices
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
    • C03B19/1415—Reactant delivery systems
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69513748T 1994-08-05 1995-08-02 Verfahren und Vorrichtung zum Speisen von flüssigem Rohmaterialgas Expired - Fee Related DE69513748T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6204488A JP2996101B2 (ja) 1994-08-05 1994-08-05 液体原料ガスの供給方法および装置

Publications (2)

Publication Number Publication Date
DE69513748D1 DE69513748D1 (de) 2000-01-13
DE69513748T2 true DE69513748T2 (de) 2000-06-29

Family

ID=16491362

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69513748T Expired - Fee Related DE69513748T2 (de) 1994-08-05 1995-08-02 Verfahren und Vorrichtung zum Speisen von flüssigem Rohmaterialgas

Country Status (4)

Country Link
US (1) US5693189A (de)
EP (1) EP0696472B1 (de)
JP (1) JP2996101B2 (de)
DE (1) DE69513748T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10118676A1 (de) * 2001-04-14 2002-11-21 Destill Tech Gmbh Verfahren und Flüssigreaktor zur Reduzierung des Blausäuregehaltes in Obstbränden und zur Aromatisierung von Spirituosen

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06196419A (ja) * 1992-12-24 1994-07-15 Canon Inc 化学気相堆積装置及びそれによる半導体装置の製造方法
SE9504580L (sv) * 1995-12-21 1997-06-22 Siemens Elema Ab Förfarande vid förgasning av en narkosvätska och en förgasare
US6135433A (en) * 1998-02-27 2000-10-24 Air Liquide America Corporation Continuous gas saturation system and method
US6123765A (en) * 1998-03-27 2000-09-26 Mitsubishi Silicon America Continuously fed single bubbler for epitaxial deposition of silicon
JP4505077B2 (ja) * 1999-04-30 2010-07-14 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 トリクロロシランガス気化供給装置
JP4542643B2 (ja) * 1999-08-30 2010-09-15 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 ガス供給装置およびガス供給方法
GB9929279D0 (en) 1999-12-11 2000-02-02 Epichem Ltd An improved method of and apparatus for the delivery of precursors in the vapour phase to a plurality of epitaxial reactor sites
DE10005820C1 (de) * 2000-02-10 2001-08-02 Schott Glas Gasversorungsvorrichtung für Precursoren geringen Dampfdrucks
EP1329540A3 (de) * 2000-07-03 2003-11-05 Epichem Limited Vorrichtung zur Zuführung von Gas-Vorläufern zu mehreren Epitaxiereaktoren
DE10059386A1 (de) * 2000-11-30 2002-06-13 Aixtron Ag Verfahren und Vorrichtung zur dosierten Abgabe kleiner Flüssigkeitsvolumenströme
JP2006272100A (ja) * 2005-03-28 2006-10-12 Ishikawajima Harima Heavy Ind Co Ltd 揮発性物質の揮発供給システム
US20070007879A1 (en) * 2005-07-11 2007-01-11 Bergman Thomas J Jr Low vapor pressure gas delivery system and apparatus
GB2432371B (en) 2005-11-17 2011-06-15 Epichem Ltd Improved bubbler for the transportation of substances by a carrier gas
FR2901713B1 (fr) * 2006-06-01 2008-07-11 Air Liquide Procede de distribution de produits precurseurs, notamment pyrophoriques
KR101463897B1 (ko) 2008-05-23 2014-11-21 주성엔지니어링(주) 원료 공급 장치 및 이를 구비하는 박막 증착 장치
TW201040306A (en) * 2009-03-11 2010-11-16 Air Liquide Bubbling supply system for stable precursor supply
WO2011053505A1 (en) 2009-11-02 2011-05-05 Sigma-Aldrich Co. Evaporator
JP5758745B2 (ja) * 2011-08-29 2015-08-05 日本エア・リキード株式会社 ガス供給システムおよびガス供給方法
JP5824372B2 (ja) * 2012-01-25 2015-11-25 東京エレクトロン株式会社 処理装置及びプロセス状態の確認方法
CN102766903A (zh) * 2012-07-03 2012-11-07 北京七星华创电子股份有限公司 气体浓度控制装置、系统和方法
WO2015012257A1 (ja) * 2013-07-26 2015-01-29 株式会社 テクノ・バンダリー 連続蒸留式トリクロロシラン気化供給装置および連続蒸留式トリクロロシランガス気化方法
JP6094513B2 (ja) * 2014-02-28 2017-03-15 東京エレクトロン株式会社 処理ガス発生装置、処理ガス発生方法、基板処理方法及び記憶媒体
CN111560597B (zh) * 2020-06-18 2022-07-01 湖南铠欣新材料科技有限公司 碳化硅化学气相沉积炉的进气装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3095463A (en) * 1958-03-12 1963-06-25 Crucible Steel Co America Temperature control apparatus
US4393013A (en) * 1970-05-20 1983-07-12 J. C. Schumacher Company Vapor mass flow control system
US3901182A (en) * 1972-05-18 1975-08-26 Harris Corp Silicon source feed process
US4276243A (en) * 1978-12-08 1981-06-30 Western Electric Company, Inc. Vapor delivery control system and method
JPS60248228A (ja) 1984-05-24 1985-12-07 Sumitomo Electric Ind Ltd バブリング装置
US4582480A (en) * 1984-08-02 1986-04-15 At&T Technologies, Inc. Methods of and apparatus for vapor delivery control in optical preform manufacture
JPS61257232A (ja) 1985-05-08 1986-11-14 Nippon Tairan Kk 液体材料ガス発生方法
JPH04243535A (ja) * 1991-01-25 1992-08-31 Fujikura Ltd 原料供給装置
JPH04341340A (ja) * 1991-05-17 1992-11-27 Fujikura Ltd 原料供給装置
JP2000252269A (ja) * 1992-09-21 2000-09-14 Mitsubishi Electric Corp 液体気化装置及び液体気化方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10118676A1 (de) * 2001-04-14 2002-11-21 Destill Tech Gmbh Verfahren und Flüssigreaktor zur Reduzierung des Blausäuregehaltes in Obstbränden und zur Aromatisierung von Spirituosen
DE10118676C2 (de) * 2001-04-14 2003-06-12 Destill Tech Gmbh Verfahren zur Reduzierung des Blausäure- und Ethylcarbamatgehaltes in Obstbränden und Vorrichtung zur Durchführung des Verfahrens

Also Published As

Publication number Publication date
US5693189A (en) 1997-12-02
EP0696472B1 (de) 1999-12-08
JPH0847629A (ja) 1996-02-20
JP2996101B2 (ja) 1999-12-27
EP0696472A1 (de) 1996-02-14
DE69513748D1 (de) 2000-01-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee