DE69501444T2 - Epitaxie zur Züchtung von Verbindunghalbleitern und InP Substraten für das Epitaxiezüchten - Google Patents

Epitaxie zur Züchtung von Verbindunghalbleitern und InP Substraten für das Epitaxiezüchten

Info

Publication number
DE69501444T2
DE69501444T2 DE69501444T DE69501444T DE69501444T2 DE 69501444 T2 DE69501444 T2 DE 69501444T2 DE 69501444 T DE69501444 T DE 69501444T DE 69501444 T DE69501444 T DE 69501444T DE 69501444 T2 DE69501444 T2 DE 69501444T2
Authority
DE
Germany
Prior art keywords
epitaxy
epitaxial growth
compound semiconductors
inp substrates
growing compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69501444T
Other languages
English (en)
Other versions
DE69501444D1 (de
Inventor
Kazuhiko Oida
Ryusuke Nakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=17063117&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69501444(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69501444D1 publication Critical patent/DE69501444D1/de
Publication of DE69501444T2 publication Critical patent/DE69501444T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
DE69501444T 1994-09-08 1995-09-06 Epitaxie zur Züchtung von Verbindunghalbleitern und InP Substraten für das Epitaxiezüchten Expired - Lifetime DE69501444T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06240680A JP3129112B2 (ja) 1994-09-08 1994-09-08 化合物半導体エピタキシャル成長方法とそのためのＩｎＰ基板

Publications (2)

Publication Number Publication Date
DE69501444D1 DE69501444D1 (de) 1998-02-19
DE69501444T2 true DE69501444T2 (de) 1998-04-23

Family

ID=17063117

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69501444T Expired - Lifetime DE69501444T2 (de) 1994-09-08 1995-09-06 Epitaxie zur Züchtung von Verbindunghalbleitern und InP Substraten für das Epitaxiezüchten

Country Status (4)

Country Link
US (1) US5647917A (de)
EP (1) EP0701008B1 (de)
JP (1) JP3129112B2 (de)
DE (1) DE69501444T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002029138A2 (en) * 2000-09-29 2002-04-11 Showa Denko K.K. Inp single crystal substrate
WO2004051725A1 (ja) * 2002-12-03 2004-06-17 Nikko Materials Co., Ltd. エピタキシャル成長方法およびエピタキシャル成長用基板
CN100378257C (zh) * 2003-05-07 2008-04-02 住友电气工业株式会社 磷化铟基板、磷化铟单晶及其制造方法
US20090072205A1 (en) * 2003-05-07 2009-03-19 Sumitomo Electric Industries, Ltd. Indium phosphide substrate, indium phosphide single crystal and process for producing them
JP2007019048A (ja) * 2003-09-19 2007-01-25 Nikko Kinzoku Kk エピタキシャル成長方法及びエピタキシャル成長用基板
JP2005150187A (ja) 2003-11-12 2005-06-09 Sumitomo Chemical Co Ltd 化合物半導体エピタキシャル基板の製造方法
WO2005090650A1 (ja) * 2004-03-19 2005-09-29 Nippon Mining & Metals Co., Ltd. 化合物半導体基板
US20050217560A1 (en) * 2004-03-31 2005-10-06 Tolchinsky Peter G Semiconductor wafers with non-standard crystal orientations and methods of manufacturing the same
JP4696070B2 (ja) 2004-09-17 2011-06-08 Ｊｘ日鉱日石金属株式会社 エピタキシャル結晶の成長方法
TWI402896B (zh) 2006-02-02 2013-07-21 Nippon Mining Co Substrate semiconductor growth substrate and epitaxial growth method
US7531851B1 (en) * 2007-02-28 2009-05-12 Hrl Laboratories, Llc Electronic device with reduced interface charge between epitaxially grown layers and a method for making the same
US7670928B2 (en) * 2006-06-14 2010-03-02 Intel Corporation Ultra-thin oxide bonding for S1 to S1 dual orientation bonding
US20080217652A1 (en) * 2006-10-24 2008-09-11 Keh-Yung Cheng Growth of AsSb-Based Semiconductor Structures on InP Substrates Using Sb-Containing Buffer Layers
WO2009101892A1 (ja) * 2008-02-13 2009-08-20 Eudyna Devices Inc. 半導体デバイスの製造方法
JP2014216624A (ja) * 2013-04-30 2014-11-17 住友電気工業株式会社 エピタキシャルウエハ、その製造方法、半導体素子、および光学センサ装置
TW201535720A (zh) * 2014-03-07 2015-09-16 Visual Photonics Epitaxy Co Ltd 定向磊晶之異質接面雙極性電晶體結構

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6288318A (ja) * 1985-10-14 1987-04-22 Sharp Corp 半導体装置の製造方法
US5011550A (en) * 1987-05-13 1991-04-30 Sharp Kabushiki Kaisha Laminated structure of compound semiconductors
JP2664904B2 (ja) * 1987-07-09 1997-10-22 日本電気株式会社 半導体受光素子の製造方法
JPS6422072A (en) * 1987-07-17 1989-01-25 Nec Corp Manufacture of pin type semiconductor photodetector
JP2666841B2 (ja) * 1987-07-28 1997-10-22 日本電気株式会社 アバランシェ型半導体受光素子の製造方法
JP2750856B2 (ja) 1987-11-12 1998-05-13 シャープ株式会社 半導体装置
JPH01270599A (ja) 1988-04-22 1989-10-27 Nec Corp 半導体積層構造及びその半導体結晶の成長方法
US5264389A (en) * 1988-09-29 1993-11-23 Sanyo Electric Co., Ltd. Method of manufacturing a semiconductor laser device
JPH0692278B2 (ja) 1989-03-09 1994-11-16 株式会社ジャパンエナジー エピタキシャル成長方法
JP2784364B2 (ja) 1989-04-27 1998-08-06 株式会社 ジャパンエナジー 化合物半導体のエピタキシャル成長方法
JPH0316993A (ja) 1989-06-13 1991-01-24 Nippon Mining Co Ltd 化合物半導体の気相エピタキシャル成長方法
US5230768A (en) * 1990-03-26 1993-07-27 Sharp Kabushiki Kaisha Method for the production of SiC single crystals by using a specific substrate crystal orientation
JPH0473610A (ja) 1990-07-13 1992-03-09 Furukawa Electric Co Ltd:The 光コネクタカバー
JP2750331B2 (ja) * 1992-04-23 1998-05-13 株式会社ジャパンエナジー エピタキシャル成長用基板およびエピタキシャル成長方法
JPH06240680A (ja) 1993-02-12 1994-08-30 Toshihito Okamoto 法枠の施工方法
JPH0794420A (ja) * 1993-09-20 1995-04-07 Fujitsu Ltd 化合物半導体結晶基板の製造方法

Also Published As

Publication number Publication date
JPH0878348A (ja) 1996-03-22
EP0701008A3 (de) 1996-06-26
EP0701008B1 (de) 1998-01-14
EP0701008A2 (de) 1996-03-13
US5647917A (en) 1997-07-15
DE69501444D1 (de) 1998-02-19
JP3129112B2 (ja) 2001-01-29

Similar Documents

Publication Publication Date Title
DE69501444T2 (de) Epitaxie zur Züchtung von Verbindunghalbleitern und InP Substraten für das Epitaxiezüchten
DE69203736T2 (de) Kristallzuchtverfahren für Halbleiter auf Galliumnitrid-Basis.
SG43823A1 (en) Process for crystal growth of iii-v group compound semiconductor
EP0711853A4 (de) Verfahren zum züchten von galliumnitridhalbleiterkristallen und vorrichtung
EP0178673A3 (en) Epitaxial layer structure grown on graded substrate and epitaxial layer structure grown on graded substrate and method of growing the same method of growing the same
EP1145621B8 (de) Wasserhaltender träger für pflanzen und wasserhaltende stoffe für die pflanzenzucht
EP0313493A3 (en) Defect free epitaxially grown silicon and method of pruducing same
GB8727278D0 (en) Epitaxial growth of compound semiconductor
DE3872471T2 (de) Einrichtung fuer czochralski-einkristallzuechtung.
AU4702000A (en) Growth of epitaxial semiconductor material with improved crystallographic properties
DE59901313D1 (de) VERFAHREN ZUR ZÜCHTUNG VON SiC-EINKRISTALLEN
DE69702620D1 (de) Verfahren zur Epitaxiezüchtung
DE69936993D1 (de) Raffinierungsverfahren für hochreines gallium zur herstellung von verbindungshalbleitern und entsprechende vorrichtung
GB8416424D0 (en) Epitaxial growth
GB2333520B (en) GaN crystal growth method
DE68907184D1 (de) Verfahren zur zuechtung von kristallen und tiegel dafuer.
GB2295830B (en) Two-dimensional epitaxial growth of III-V compound semiconductors
DE69738617D1 (de) Verfahren zur epitaktischen Wachstum von zwillingsfreien, (111)-orientierten II-VI Legierungsfilmen auf Silizium-Substraten
EP0557890A3 (en) Method for the growth of epitaxial metal-insulator-metal-semiconductor structures
SG75844A1 (en) Crystal growth method for group-iii nitride and related compound semiconductors
DE69501090T2 (de) Verfahren zur Kristallzüchtung
EP0476389A3 (en) Method of growing single crystal of compound semiconductors
DE69522888D1 (de) Epitaxiewachstum von Halbleiterverbindungen
KR970010570B1 (en) Substrate for highly bright led and method of epitaxially growing the same
FR2639508B1 (fr) Element support de godets, notamment pour la culture de plants ou de fleurs

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: WESER & KOLLEGEN, 81245 MUENCHEN

8328 Change in the person/name/address of the agent

Representative=s name: MEISSNER, BOLTE & PARTNER GBR, 80538 MUENCHEN