DE69432656D1 - Verbesserte Ausleseschaltung für Ladungstransfervorrichtung - Google Patents

Verbesserte Ausleseschaltung für Ladungstransfervorrichtung

Info

Publication number
DE69432656D1
DE69432656D1 DE69432656T DE69432656T DE69432656D1 DE 69432656 D1 DE69432656 D1 DE 69432656D1 DE 69432656 T DE69432656 T DE 69432656T DE 69432656 T DE69432656 T DE 69432656T DE 69432656 D1 DE69432656 D1 DE 69432656D1
Authority
DE
Germany
Prior art keywords
transfer device
charge transfer
readout circuit
improved readout
improved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69432656T
Other languages
English (en)
Other versions
DE69432656T2 (de
Inventor
Yasuhito Maki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE69432656D1 publication Critical patent/DE69432656D1/de
Application granted granted Critical
Publication of DE69432656T2 publication Critical patent/DE69432656T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45273—Mirror types
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/219—Follower transistors are added at the input of the amplifier, e.g. source or emitter followers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/50—Indexing scheme relating to amplifiers in which input being applied to, or output being derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower
    • H03F2203/5027—Indexing scheme relating to amplifiers in which input being applied to, or output being derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower the source follower has a current mirror output circuit in its source circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Power Engineering (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
DE69432656T 1993-08-12 1994-08-11 Verbesserte Ausleseschaltung für Ladungstransfervorrichtung Expired - Lifetime DE69432656T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP20067593 1993-08-12
JP20067593A JP3413664B2 (ja) 1993-08-12 1993-08-12 電荷転送装置

Publications (2)

Publication Number Publication Date
DE69432656D1 true DE69432656D1 (de) 2003-06-18
DE69432656T2 DE69432656T2 (de) 2004-02-19

Family

ID=16428377

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69432656T Expired - Lifetime DE69432656T2 (de) 1993-08-12 1994-08-11 Verbesserte Ausleseschaltung für Ladungstransfervorrichtung

Country Status (5)

Country Link
US (1) US5600451A (de)
EP (1) EP0639028B1 (de)
JP (1) JP3413664B2 (de)
KR (1) KR100294868B1 (de)
DE (1) DE69432656T2 (de)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2586393B2 (ja) * 1993-12-08 1997-02-26 日本電気株式会社 固体撮像素子の信号処理回路
JP2795314B2 (ja) * 1996-05-13 1998-09-10 日本電気株式会社 半導体装置
JP3351503B2 (ja) * 1996-10-09 2002-11-25 シャープ株式会社 固体撮像装置
US5872484A (en) * 1997-07-11 1999-02-16 Texas Instruments Incorporated High performance current output amplifier for CCD image sensors
US6972794B1 (en) * 1999-06-15 2005-12-06 Micron Technology, Inc. Dual sensitivity image sensor
WO2000078034A2 (en) * 1999-06-15 2000-12-21 Photobit Corporation Dual sensitivity image sensor
JP2002271698A (ja) * 2001-03-09 2002-09-20 Honda Motor Co Ltd 光センサ回路
TWI316332B (en) * 2004-04-21 2009-10-21 Sony Corp Differential amplifier device, 2-stage amplifier device, and analog/digital converter device
US8536661B1 (en) 2004-06-25 2013-09-17 University Of Hawaii Biosensor chip sensor protection methods
WO2007008246A2 (en) 2004-11-12 2007-01-18 The Board Of Trustees Of The Leland Stanford Junior University Charge perturbation detection system for dna and other molecules
JP2006173663A (ja) * 2004-12-10 2006-06-29 Nec Electronics Corp 電荷検出装置
US7468500B2 (en) * 2005-09-13 2008-12-23 Texas Instruments Incorporated High performance charge detection amplifier for CCD image sensors
US8262900B2 (en) 2006-12-14 2012-09-11 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US8349167B2 (en) 2006-12-14 2013-01-08 Life Technologies Corporation Methods and apparatus for detecting molecular interactions using FET arrays
ES2923759T3 (es) 2006-12-14 2022-09-30 Life Technologies Corp Aparato para medir analitos utilizando matrices de FET
US11339430B2 (en) 2007-07-10 2022-05-24 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
JP5667049B2 (ja) 2008-06-25 2015-02-12 ライフ テクノロジーズ コーポレーション 大規模なｆｅｔアレイを用いて分析物を測定するための方法および装置
US20100301398A1 (en) 2009-05-29 2010-12-02 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
US20100137143A1 (en) 2008-10-22 2010-06-03 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
US20120261274A1 (en) 2009-05-29 2012-10-18 Life Technologies Corporation Methods and apparatus for measuring analytes
US8673627B2 (en) 2009-05-29 2014-03-18 Life Technologies Corporation Apparatus and methods for performing electrochemical reactions
US8776573B2 (en) 2009-05-29 2014-07-15 Life Technologies Corporation Methods and apparatus for measuring analytes
US20120001646A1 (en) 2010-06-30 2012-01-05 Life Technologies Corporation Methods and apparatus for testing isfet arrays
CN109449171A (zh) 2010-06-30 2019-03-08 生命科技公司 用于检测和测量化学反应和化合物的晶体管电路
CN103154718B (zh) 2010-06-30 2015-09-23 生命科技公司 感测离子的电荷堆积电路和方法
US11307166B2 (en) 2010-07-01 2022-04-19 Life Technologies Corporation Column ADC
EP2589065B1 (de) 2010-07-03 2015-08-19 Life Technologies Corporation Chemisch empfindlicher sensor mit leicht dotierten abflüssen
US9618475B2 (en) 2010-09-15 2017-04-11 Life Technologies Corporation Methods and apparatus for measuring analytes
US8685324B2 (en) 2010-09-24 2014-04-01 Life Technologies Corporation Matched pair transistor circuits
JP2012205043A (ja) * 2011-03-25 2012-10-22 Sony Corp 差動増幅器及びアナログ／デジタル変換器
US9970984B2 (en) 2011-12-01 2018-05-15 Life Technologies Corporation Method and apparatus for identifying defects in a chemical sensor array
US8821798B2 (en) 2012-01-19 2014-09-02 Life Technologies Corporation Titanium nitride as sensing layer for microwell structure
US8747748B2 (en) 2012-01-19 2014-06-10 Life Technologies Corporation Chemical sensor with conductive cup-shaped sensor surface
US8786331B2 (en) 2012-05-29 2014-07-22 Life Technologies Corporation System for reducing noise in a chemical sensor array
US9080968B2 (en) 2013-01-04 2015-07-14 Life Technologies Corporation Methods and systems for point of use removal of sacrificial material
US9841398B2 (en) 2013-01-08 2017-12-12 Life Technologies Corporation Methods for manufacturing well structures for low-noise chemical sensors
US8962366B2 (en) 2013-01-28 2015-02-24 Life Technologies Corporation Self-aligned well structures for low-noise chemical sensors
US8841217B1 (en) 2013-03-13 2014-09-23 Life Technologies Corporation Chemical sensor with protruded sensor surface
US8963216B2 (en) 2013-03-13 2015-02-24 Life Technologies Corporation Chemical sensor with sidewall spacer sensor surface
JP2016510895A (ja) 2013-03-15 2016-04-11 ライフ テクノロジーズ コーポレーション 一貫性のあるセンサ表面積を有する化学センサ
JP6671274B2 (ja) 2013-03-15 2020-03-25 ライフ テクノロジーズ コーポレーション 薄伝導性素子を有する化学装置
JP6581074B2 (ja) 2013-03-15 2019-09-25 ライフ テクノロジーズ コーポレーション 一貫性のあるセンサ表面積を有する化学センサ
US9116117B2 (en) 2013-03-15 2015-08-25 Life Technologies Corporation Chemical sensor with sidewall sensor surface
US9835585B2 (en) 2013-03-15 2017-12-05 Life Technologies Corporation Chemical sensor with protruded sensor surface
US20140336063A1 (en) 2013-05-09 2014-11-13 Life Technologies Corporation Windowed Sequencing
US10458942B2 (en) 2013-06-10 2019-10-29 Life Technologies Corporation Chemical sensor array having multiple sensors per well
US10077472B2 (en) 2014-12-18 2018-09-18 Life Technologies Corporation High data rate integrated circuit with power management
CN107407656B (zh) 2014-12-18 2020-04-07 生命科技公司 使用大规模 fet 阵列测量分析物的方法和装置
US10605767B2 (en) 2014-12-18 2020-03-31 Life Technologies Corporation High data rate integrated circuit with transmitter configuration

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4518926A (en) * 1982-12-20 1985-05-21 At&T Bell Laboratories Gate-coupled field-effect transistor pair amplifier
US4556910A (en) * 1984-01-05 1985-12-03 Fuji Photo Film Co., Ltd. Image sensing device having on-chip fixed-pattern noise reducing circuit
JPS6262671A (ja) * 1985-09-12 1987-03-19 Canon Inc 固体撮像素子の信号処理回路
US4689808A (en) * 1986-01-31 1987-08-25 Rca Corporation Low noise signal detection for a charge transfer device by quadrature phasing of information and reset noise signals
US4644287A (en) * 1986-03-10 1987-02-17 Rca Corporation Low noise synchronous detection for a charge transfer device
JPS639288A (ja) * 1986-06-30 1988-01-14 Toshiba Corp 固体撮像素子の駆動方法
US4814648A (en) * 1987-09-24 1989-03-21 Texas Instruments Incorporated Low 1/f noise amplifier for CCD imagers
KR0141494B1 (ko) * 1988-01-28 1998-07-15 미다 가쓰시게 레벨시프트회로를 사용한 고속센스 방식의 반도체장치
US5182658A (en) * 1988-07-27 1993-01-26 Canon Kabushiki Kaisha Image pickup apparatus for controlling accumulation time in photoelectric elements
US4987321A (en) * 1989-09-25 1991-01-22 Eastman Kodak Company Processing circuit for image sensor
JP2701546B2 (ja) * 1991-01-18 1998-01-21 日本電気株式会社 信号電荷検出回路を有する電荷転送装置
JP3114238B2 (ja) * 1991-06-04 2000-12-04 ソニー株式会社 固体撮像装置
GB9218987D0 (en) * 1992-09-08 1992-10-21 Fujitsu Ltd Voltage storage circuits

Also Published As

Publication number Publication date
KR950007445A (ko) 1995-03-21
JPH0759013A (ja) 1995-03-03
EP0639028B1 (de) 2003-05-14
US5600451A (en) 1997-02-04
KR100294868B1 (ko) 2001-09-17
EP0639028A1 (de) 1995-02-15
DE69432656T2 (de) 2004-02-19
JP3413664B2 (ja) 2003-06-03

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Legal Events

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