KR880006785A - 전하전송장치 - Google Patents
전하전송장치Info
- Publication number
- KR880006785A KR880006785A KR1019870010725A KR870010725A KR880006785A KR 880006785 A KR880006785 A KR 880006785A KR 1019870010725 A KR1019870010725 A KR 1019870010725A KR 870010725 A KR870010725 A KR 870010725A KR 880006785 A KR880006785 A KR 880006785A
- Authority
- KR
- South Korea
- Prior art keywords
- transfer device
- charge transfer
- charge
- transfer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76816—Output structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP86-267264 | 1986-11-10 | ||
| JP61267264A JP2508668B2 (ja) | 1986-11-10 | 1986-11-10 | 電荷転送装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR880006785A true KR880006785A (ko) | 1988-07-25 |
| KR0147364B1 KR0147364B1 (ko) | 1998-08-01 |
Family
ID=17442427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019870010725A KR0147364B1 (ko) | 1986-11-10 | 1987-09-28 | 전하전송장치 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4939560A (ko) |
| JP (1) | JP2508668B2 (ko) |
| KR (1) | KR0147364B1 (ko) |
| DE (1) | DE3738025C2 (ko) |
| FR (1) | FR2606553B1 (ko) |
| GB (1) | GB2197986B (ko) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5306932A (en) * | 1989-07-21 | 1994-04-26 | Nec Corporation | Charge transfer device provided with improved output structure |
| JPH07123163B2 (ja) * | 1989-07-21 | 1995-12-25 | 日本電気株式会社 | 電荷転送装置 |
| JPH0423334A (ja) * | 1990-05-14 | 1992-01-27 | Nec Corp | 電荷転送装置 |
| US5250824A (en) * | 1990-08-29 | 1993-10-05 | California Institute Of Technology | Ultra low-noise charge coupled device |
| KR940004273B1 (ko) * | 1991-02-12 | 1994-05-19 | 금성일렉트론 주식회사 | 이상 수직 ccd 구조 |
| KR940000953Y1 (ko) * | 1991-04-13 | 1994-02-25 | 금성일렉트론 주식회사 | Ccd의 리셋트 게이트 구조 |
| KR940001404B1 (ko) * | 1991-04-15 | 1994-02-21 | 금성일렉트론 주식회사 | 더미 hccd구조 |
| JP3143979B2 (ja) * | 1991-08-22 | 2001-03-07 | ソニー株式会社 | Ｃｃｄシフトレジスタ |
| JP2963572B2 (ja) * | 1992-01-27 | 1999-10-18 | 沖電気工業株式会社 | 電荷結合素子 |
| JPH05251480A (ja) * | 1992-03-04 | 1993-09-28 | Sony Corp | 電荷電圧変換装置 |
| KR950002084A (ko) * | 1993-06-22 | 1995-01-04 | 오가 노리오 | 전하전송장치 |
| KR970010687B1 (ko) * | 1993-11-05 | 1997-06-30 | 엘지반도체 주식회사 | 쌍방형 전하결합소자 |
| JP4981255B2 (ja) * | 2005-01-24 | 2012-07-18 | オンセミコンダクター・トレーディング・リミテッド | 電荷結合装置及び固体撮像装置 |
| US8383443B2 (en) | 2010-05-14 | 2013-02-26 | International Business Machines Corporation | Non-uniform gate dielectric charge for pixel sensor cells and methods of manufacturing |
| KR102291762B1 (ko) | 2017-11-07 | 2021-09-03 | 주식회사 엘지에너지솔루션 | 릴레이 진단 회로 |
| KR102251647B1 (ko) | 2019-11-07 | 2021-05-13 | 울산대학교 산학협력단 | 풍력 터빈 발전기용 비돌출형 풍향 풍속 측정 장치 및 그 방법 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS606101B2 (ja) * | 1976-10-14 | 1985-02-15 | ソニー株式会社 | 電荷転送装置の製法 |
| DE2818026A1 (de) * | 1977-05-02 | 1978-11-16 | Hughes Aircraft Co | Ladungsgekoppeltes bauelement |
| US4171521A (en) * | 1977-06-02 | 1979-10-16 | Hughes Aircraft Company | Charge-coupled analog-to-digital converter |
| US4538287A (en) * | 1979-06-04 | 1985-08-27 | Texas Instruments Incorporated | Floating gate amplifier using conductive coupling for charge coupled devices |
| NL8301715A (nl) * | 1983-05-13 | 1984-12-03 | Philips Nv | Ladingstransportinrichting. |
| JPH0714045B2 (ja) * | 1985-03-15 | 1995-02-15 | ソニー株式会社 | 電荷転送装置 |
| CA1314601C (en) * | 1986-02-03 | 1993-03-16 | Dennis J. Wilwerding | Dark current compensation |
-
1986
- 1986-11-10 JP JP61267264A patent/JP2508668B2/ja not_active Expired - Lifetime
-
1987
- 1987-09-28 KR KR1019870010725A patent/KR0147364B1/ko not_active IP Right Cessation
- 1987-11-06 GB GB8726108A patent/GB2197986B/en not_active Expired - Lifetime
- 1987-11-09 DE DE3738025A patent/DE3738025C2/de not_active Expired - Lifetime
- 1987-11-10 FR FR8715584A patent/FR2606553B1/fr not_active Expired - Lifetime
-
1989
- 1989-03-29 US US07/331,000 patent/US4939560A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| FR2606553B1 (fr) | 1994-05-13 |
| FR2606553A1 (fr) | 1988-05-13 |
| JP2508668B2 (ja) | 1996-06-19 |
| JPS63120465A (ja) | 1988-05-24 |
| US4939560A (en) | 1990-07-03 |
| GB2197986A (en) | 1988-06-02 |
| GB2197986B (en) | 1990-08-29 |
| DE3738025C2 (de) | 2003-06-26 |
| DE3738025A1 (de) | 1988-05-11 |
| KR0147364B1 (ko) | 1998-08-01 |
| GB8726108D0 (en) | 1987-12-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application | ||
| J2X1 | Appeal (before the patent court) |
Free format text: APPEAL AGAINST DECISION TO DECLINE REFUSAL |
|
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20120514 Year of fee payment: 15 |
|
| EXPY | Expiration of term |