DE69429322T2 - Umwandlung von fullerenen zu diamant - Google Patents

Umwandlung von fullerenen zu diamant

Info

Publication number
DE69429322T2
DE69429322T2 DE69429322T DE69429322T DE69429322T2 DE 69429322 T2 DE69429322 T2 DE 69429322T2 DE 69429322 T DE69429322 T DE 69429322T DE 69429322 T DE69429322 T DE 69429322T DE 69429322 T2 DE69429322 T2 DE 69429322T2
Authority
DE
Germany
Prior art keywords
diamond
molecules
fullerene
substrate
fullerene molecules
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69429322T
Other languages
English (en)
Other versions
DE69429322D1 (de
Inventor
Dieter M Gruen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dimerond Technologies LLC
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of DE69429322D1 publication Critical patent/DE69429322D1/de
Application granted granted Critical
Publication of DE69429322T2 publication Critical patent/DE69429322T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26Deposition of carbon only
    • C23C16/27Diamond only
    • C23C16/274Diamond only using microwave discharges
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/25Diamond
    • C01B32/26Preparation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605Carbon
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605Carbon
    • C23C14/0611Diamond
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221Ion beam deposition
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26Deposition of carbon only
    • C23C16/27Diamond only
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26Deposition of carbon only
    • C23C16/27Diamond only
    • C23C16/277Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02Epitaxial-layer growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/10Heating of the reaction chamber or the substrate
    • C30B25/105Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/04Diamond
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/022Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S423/00Chemistry of inorganic compounds
    • Y10S423/39Fullerene, e.g. c60, c70 derivative and related process
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S427/00Coating processes
    • Y10S427/102Fullerene type base or coating
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S427/00Coating processes
    • Y10S427/103Diamond-like carbon coating, i.e. DLC
    • Y10S427/106Utilizing plasma, e.g. corona, glow discharge, cold plasma
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/30Self-sustaining carbon mass or layer with impregnant or other layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Combustion & Propulsion (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
DE69429322T 1993-03-23 1994-03-11 Umwandlung von fullerenen zu diamant Expired - Fee Related DE69429322T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/035,419 US5370855A (en) 1991-11-25 1993-03-23 Conversion of fullerenes to diamond
PCT/US1994/002588 WO1994021557A1 (en) 1993-03-23 1994-03-11 Conversion of fullerenes to diamond

Publications (2)

Publication Number Publication Date
DE69429322D1 DE69429322D1 (de) 2002-01-17
DE69429322T2 true DE69429322T2 (de) 2002-08-08

Family

ID=21882573

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69429322T Expired - Fee Related DE69429322T2 (de) 1993-03-23 1994-03-11 Umwandlung von fullerenen zu diamant

Country Status (5)

Country Link
US (2) US5370855A (de)
EP (1) EP0650465B1 (de)
AT (1) ATE210072T1 (de)
DE (1) DE69429322T2 (de)
WO (1) WO1994021557A1 (de)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5538763A (en) * 1991-10-25 1996-07-23 Sumitomo Electric Industries, Ltd. Method of preparing carbon cluster film having electrical conductivity
US5849079A (en) * 1991-11-25 1998-12-15 The University Of Chicago Diamond film growth argon-carbon plasmas
US5620512A (en) * 1993-10-27 1997-04-15 University Of Chicago Diamond film growth from fullerene precursors
US5370855A (en) * 1991-11-25 1994-12-06 Gruen; Dieter M. Conversion of fullerenes to diamond
US5989511A (en) * 1991-11-25 1999-11-23 The University Of Chicago Smooth diamond films as low friction, long wear surfaces
US5772760A (en) * 1991-11-25 1998-06-30 The University Of Chicago Method for the preparation of nanocrystalline diamond thin films
DE4423891A1 (de) * 1994-07-07 1996-01-11 Daimler Benz Ag Schichtaufbau mit einer organischen Schicht und einer die organische Schicht bedeckenden und gegenüber der organischen Schicht härteren, transparenten Deckschicht sowie Verfahren zur Herstellung des Schichtaufbaus
DE4423833C2 (de) * 1994-07-07 1998-07-23 Daimler Benz Ag Lackschicht zur späteren Beschichtung mit einer gegenüber der organischen Lackschicht härteren Deckschicht und Verfahren zur Oberflächenbehandlung der Lackschicht
WO1996024139A2 (en) 1995-01-23 1996-08-08 Schaefer Daniel R Trapping and storage of free thermal neutrons in fullerene molecules
US5614258A (en) * 1995-02-21 1997-03-25 Martin Moskovits Process of diamond growth from C70
US5824368A (en) * 1995-02-21 1998-10-20 Moskovits; Martin Process of diamond growth from C70
JP3780386B2 (ja) * 1996-03-28 2006-05-31 株式会社村田製作所 セラミック回路基板及びその製造方法
DE19624694A1 (de) * 1996-06-20 1998-01-08 Max Planck Gesellschaft Graphit-Diamant-Umwandlung
US5885541A (en) * 1997-07-07 1999-03-23 Bates; Stephen Cuyler Technique for the fabrication of bulk porous diamond
RU2131763C1 (ru) * 1997-08-22 1999-06-20 Закрытое акционерное общество "Научно-техническое агентство "Интеллект" Способ получения искусственных алмазов
US6277438B1 (en) 1999-05-03 2001-08-21 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Protective fullerene (C60) packaging system for microelectromechanical systems applications
WO2000077812A2 (en) * 1999-06-10 2000-12-21 Northeastern University Light-induced electron capture at a surface
US6416820B1 (en) 1999-11-19 2002-07-09 Epion Corporation Method for forming carbonaceous hard film
US6793849B1 (en) * 2000-10-09 2004-09-21 The University Of Chicago N-type droping of nanocrystalline diamond films with nitrogen and electrodes made therefrom
US7795468B2 (en) 2001-01-19 2010-09-14 Chevron U.S.A. Inc. Functionalized higher diamondoids
US6858700B2 (en) 2001-01-19 2005-02-22 Chervon U.S.A. Inc. Polymerizable higher diamondoid derivatives
US7306674B2 (en) * 2001-01-19 2007-12-11 Chevron U.S.A. Inc. Nucleation of diamond films using higher diamondoids
AU2002241830B2 (en) 2001-01-19 2007-10-04 Chevron U.S.A. Inc. Polymerizable higher diamondoid derivatives
US6783589B2 (en) * 2001-01-19 2004-08-31 Chevron U.S.A. Inc. Diamondoid-containing materials in microelectronics
US7273598B2 (en) * 2001-01-19 2007-09-25 Chevron U.S.A. Inc. Diamondoid-containing materials for passivating layers in integrated circuit devices
FI2251344T4 (fi) * 2001-01-25 2024-04-29 The United States Of America Represented By The Secretary Boronihappoyhdisteiden formulointi
US6884290B2 (en) * 2002-01-11 2005-04-26 Board Of Trustees Of Michigan State University Electrically conductive polycrystalline diamond and particulate metal based electrodes
US7534296B2 (en) * 2002-01-11 2009-05-19 Board Of Trustees Of Michigan State University Electrically conductive diamond electrodes
US20030170906A1 (en) * 2002-01-23 2003-09-11 Board Of Trustees Of Michigan State University Conductive diamond spectrographic cells and method of use
AU2003209209A1 (en) * 2002-01-25 2003-09-02 Michigan State University Surface acoustic wave devices based on unpolished nanocrystalline diamond
US20030152700A1 (en) * 2002-02-11 2003-08-14 Board Of Trustees Operating Michigan State University Process for synthesizing uniform nanocrystalline films
EP1514090B1 (de) * 2002-06-10 2013-09-11 Trustees Of Tufts College Analysegerät für toc (gesamtmenge an organischem kohlenstoff)
US8220489B2 (en) 2002-12-18 2012-07-17 Vapor Technologies Inc. Faucet with wear-resistant valve component
US7866342B2 (en) 2002-12-18 2011-01-11 Vapor Technologies, Inc. Valve component for faucet
US7866343B2 (en) 2002-12-18 2011-01-11 Masco Corporation Of Indiana Faucet
US8555921B2 (en) 2002-12-18 2013-10-15 Vapor Technologies Inc. Faucet component with coating
US7312562B2 (en) * 2004-02-04 2007-12-25 Chevron U.S.A. Inc. Heterodiamondoid-containing field emission devices
US7687146B1 (en) 2004-02-11 2010-03-30 Zyvex Labs, Llc Simple tool for positional diamond mechanosynthesis, and its method of manufacture
JP4711634B2 (ja) * 2004-02-19 2011-06-29 喜樹 高木 ダイヤモンドの合成方法と装置並びにダイヤモンド合成用電極とその製造方法
US20060039521A1 (en) * 2004-06-22 2006-02-23 Schaefer Daniel R Direct production of thermal antineutrons and antiprotons
US20110005564A1 (en) * 2005-10-11 2011-01-13 Dimerond Technologies, Inc. Method and Apparatus Pertaining to Nanoensembles Having Integral Variable Potential Junctions
US20070205521A1 (en) * 2006-01-27 2007-09-06 Lockheed Martin Corporation Encapsulation of Semiconductor Components
US20070183929A1 (en) * 2006-02-09 2007-08-09 OI Analytical Total organic carbon analysis
US7841428B2 (en) 2006-02-10 2010-11-30 Us Synthetic Corporation Polycrystalline diamond apparatuses and methods of manufacture
US7516804B2 (en) 2006-07-31 2009-04-14 Us Synthetic Corporation Polycrystalline diamond element comprising ultra-dispersed diamond grain structures and applications utilizing same
US20090017258A1 (en) * 2007-07-10 2009-01-15 Carlisle John A Diamond film deposition
US8114144B2 (en) * 2007-10-17 2012-02-14 Abbott Cardiovascular Systems Inc. Rapid-exchange retractable sheath self-expanding delivery system with incompressible inner member and flexible distal assembly
US8227350B2 (en) * 2008-01-04 2012-07-24 Advanced Diamond Technologies, Inc. Controlling diamond film surfaces and layering
US20090214826A1 (en) * 2008-01-04 2009-08-27 Charles West Controlling diamond film surfaces
US7842111B1 (en) 2008-04-29 2010-11-30 Us Synthetic Corporation Polycrystalline diamond compacts, methods of fabricating same, and applications using same
US8986408B1 (en) 2008-04-29 2015-03-24 Us Synthetic Corporation Methods of fabricating polycrystalline diamond products using a selected amount of graphite particles
US8709217B2 (en) 2008-11-10 2014-04-29 University Of Florida Research Foundation, Inc. Production of carbon nanostructures from functionalized fullerenes
US8608850B1 (en) * 2009-01-16 2013-12-17 The University Of Puerto Rico Low-energy, hydrogen-free method of diamond synthesis
CN104303265B (zh) * 2012-02-03 2018-08-14 希捷科技有限公司 形成层的方法
US9040395B2 (en) 2012-08-10 2015-05-26 Dimerond Technologies, Llc Apparatus pertaining to solar cells having nanowire titanium oxide cores and graphene exteriors and the co-generation conversion of light into electricity using such solar cells
US8829331B2 (en) 2012-08-10 2014-09-09 Dimerond Technologies Llc Apparatus pertaining to the co-generation conversion of light into electricity
US8586999B1 (en) 2012-08-10 2013-11-19 Dimerond Technologies, Llc Apparatus pertaining to a core of wide band-gap material having a graphene shell
EP2928821A1 (de) * 2012-12-05 2015-10-14 Cambridge Enterprise Limited Verfahren zur herstellung von synthetischen diamanten
US10508342B2 (en) * 2016-08-29 2019-12-17 Creating Nano Technologies, Inc. Method for manufacturing diamond-like carbon film
JP2022535268A (ja) 2019-06-03 2022-08-05 ダイムロンド テクノロジーズ, エルエルシー 高効率グラフェン/ワイドバンドギャップ半導体ヘテロ接合太陽電池セル

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3502902A1 (de) * 1984-01-31 1985-08-08 Futaba Denshi Kogyo K.K., Mobara, Chiba Ionenstrahl-aufdampfvorrichtung
JPS6115967A (ja) * 1984-06-29 1986-01-24 Sumitomo Electric Ind Ltd 表面処理方法
GB8423255D0 (en) * 1984-09-14 1984-10-17 Atomic Energy Authority Uk Surface treatment of metals
US5132105A (en) * 1990-02-02 1992-07-21 Quantametrics, Inc. Materials with diamond-like properties and method and means for manufacturing them
WO1993005207A1 (en) * 1991-09-03 1993-03-18 Chang R P H Method of nucleating diamond and article produced thereby
US5209916A (en) * 1991-11-25 1993-05-11 Gruen Dieter M Conversion of fullerenes to diamond
US5370855A (en) * 1991-11-25 1994-12-06 Gruen; Dieter M. Conversion of fullerenes to diamond
US5308661A (en) * 1993-03-03 1994-05-03 The Regents Of The University Of California Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate

Also Published As

Publication number Publication date
ATE210072T1 (de) 2001-12-15
WO1994021557A1 (en) 1994-09-29
US5370855A (en) 1994-12-06
EP0650465A1 (de) 1995-05-03
DE69429322D1 (de) 2002-01-17
EP0650465B1 (de) 2001-12-05
US5462776A (en) 1995-10-31
EP0650465A4 (de) 1997-05-21

Similar Documents

Publication Publication Date Title
DE69429322T2 (de) Umwandlung von fullerenen zu diamant
DE69415323T2 (de) Hydrophile filme durch plasmapolymerisation
NO975387D0 (no) Fremgangsmåte for fremstilling av 3-haloalkyl-1H-pyrazoler
KR920005261A (ko) 이온 주입 장치 및 그 클리닝 방법
DE69418059D1 (de) Verfahren und vorrichtung zur herstellung angeregter gase
CA2289347A1 (en) Method and apparatus for round-trip software engineering
TW356571B (en) Method of forming stress adjustable insulator film semiconductor device and its fabrication method
MY124843A (en) Process of selective transfer of at least one element from an initial support to a final support
TW339415B (en) Processing and manufacturing method of LCD elements
AU3167097A (en) A method of modifying the surface of a solid polymer substrate and the product obtained
TW351770B (en) Shield layer, method for forming shield layer and producing substrate
TW348227B (en) Method of orientation treatment of orientation film
KR960026338A (ko) 레지스트의 애싱방법 및 장치
TW279953B (en) Music generator and method
ITMI911038A1 (it) Processo per l'assorbimento di gas residui, in particolare azoto, mediante una lega getter a base di bario non evaporato.
ES2134430T3 (es) Procedimiento de fluoracion.
WO2002093662A3 (en) A method of providing a layer including a metal or silicon or germanium and oxygen on a surface
EP1014252A3 (de) Informationsverarbeitungsanordnung und - Verfahren geeignet zur Verarbeitung von Eingangsinformationen von verschiedenen Arten
MY134549A (en) Film lamination method and lamination apparatus
ES2156138T3 (es) Procesos moleculares y aparato para efectuar los mismos.
UA50709C2 (uk) Спосіб утилізації органічних сполук та пристрій для його здійснення
KR910005407A (ko) 비정질 실리콘 박막을 증착시키는 방법
KR920005253A (ko) 반도체 디바이스의 패턴형성 방법 및 그 장치
ES2130256T3 (es) Metodo para mejorar el aroma y/o el sabor de un vino usando gases nobles.
KR970043270A (ko) 칼라 스텐레스의 제조방법

Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: DIMEROND TECHNOLOGIES, LLC, DOWNERS GROVE, ILL., U

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee