DE69428996T2 - Schottky-gleichrichter mit mos-gräben - Google Patents

Schottky-gleichrichter mit mos-gräben

Info

Publication number
DE69428996T2
DE69428996T2 DE69428996T DE69428996T DE69428996T2 DE 69428996 T2 DE69428996 T2 DE 69428996T2 DE 69428996 T DE69428996 T DE 69428996T DE 69428996 T DE69428996 T DE 69428996T DE 69428996 T2 DE69428996 T2 DE 69428996T2
Authority
DE
Germany
Prior art keywords
mesa
face
conductivity type
anode electrode
insulating regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69428996T
Other languages
English (en)
Other versions
DE69428996D1 (de
Inventor
Manjo Mehrotra
Jayant Baliga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
North Carolina State University
University of California
Original Assignee
North Carolina State University
University of California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by North Carolina State University, University of California filed Critical North Carolina State University
Application granted granted Critical
Publication of DE69428996D1 publication Critical patent/DE69428996D1/de
Publication of DE69428996T2 publication Critical patent/DE69428996T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69428996T 1993-07-06 1994-06-29 Schottky-gleichrichter mit mos-gräben Expired - Lifetime DE69428996T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/088,204 US5365102A (en) 1993-07-06 1993-07-06 Schottky barrier rectifier with MOS trench
PCT/US1994/007348 WO1995002258A1 (en) 1993-07-06 1994-06-29 Schottky barrier rectifier with mos trench

Publications (2)

Publication Number Publication Date
DE69428996D1 DE69428996D1 (de) 2001-12-13
DE69428996T2 true DE69428996T2 (de) 2002-06-20

Family

ID=22209988

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69428996T Expired - Lifetime DE69428996T2 (de) 1993-07-06 1994-06-29 Schottky-gleichrichter mit mos-gräben

Country Status (7)

Country Link
US (1) US5365102A (de)
EP (1) EP0707744B1 (de)
JP (1) JP2911605B2 (de)
AT (1) ATE208537T1 (de)
AU (1) AU7252994A (de)
DE (1) DE69428996T2 (de)
WO (1) WO1995002258A1 (de)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006056505A1 (de) 2004-11-24 2006-06-01 Robert Bosch Gmbh Halbleitereinrichtung und gleichrichteranordnung
DE102007045185A1 (de) 2007-09-21 2009-04-02 Robert Bosch Gmbh Halbleitervorrichtung und Verfahren zu deren Herstellung
DE102009028248A1 (de) 2009-08-05 2011-02-10 Robert Bosch Gmbh Halbleiteranordnung
DE102009046606A1 (de) 2009-11-11 2011-05-12 Robert Bosch Gmbh Schutzelement für elektronische Schaltungen
DE102010003166A1 (de) 2010-03-23 2011-09-29 Robert Bosch Gmbh Vorrichtung zur Stromerzeugung mit Solarzellen
DE102010028783A1 (de) 2010-05-10 2011-11-10 Robert Bosch Gmbh Gleichrichter-Brückenschaltung
WO2012016733A1 (de) 2010-08-04 2012-02-09 Robert Bosch Gmbh Gleichrichteranordnung, welche schottkydioden aufweist
US8445368B2 (en) 2004-11-08 2013-05-21 Robert Bosch Gmbh Semiconductor device and method for manufacturing same

Families Citing this family (164)

* Cited by examiner, † Cited by third party
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AU7252994A (en) 1995-02-06
EP0707744B1 (de) 2001-11-07
ATE208537T1 (de) 2001-11-15
JP2911605B2 (ja) 1999-06-23
EP0707744A1 (de) 1996-04-24
DE69428996D1 (de) 2001-12-13
US5365102A (en) 1994-11-15
WO1995002258A1 (en) 1995-01-19
JPH08512430A (ja) 1996-12-24

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