DE69428086T2 - Verfahren zur Fernmessung von Prozessmesswerten - Google Patents

Verfahren zur Fernmessung von Prozessmesswerten

Info

Publication number
DE69428086T2
DE69428086T2 DE69428086T DE69428086T DE69428086T2 DE 69428086 T2 DE69428086 T2 DE 69428086T2 DE 69428086 T DE69428086 T DE 69428086T DE 69428086 T DE69428086 T DE 69428086T DE 69428086 T2 DE69428086 T2 DE 69428086T2
Authority
DE
Germany
Prior art keywords
silicon wafer
monitoring element
primary coil
silicon
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69428086T
Other languages
German (de)
English (en)
Other versions
DE69428086D1 (de
Inventor
Derryl D. J. Allman
Richard K. Cole
Crystal J. Hass
Matthew S. Von Thun
James P. Yakura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
NCR International Inc
Original Assignee
Symbios Inc
NCR International Inc
Hyundai Electronics America Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Symbios Inc, NCR International Inc, Hyundai Electronics America Inc filed Critical Symbios Inc
Publication of DE69428086D1 publication Critical patent/DE69428086D1/de
Application granted granted Critical
Publication of DE69428086T2 publication Critical patent/DE69428086T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H10P72/0602—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
    • G01K1/02—Means for indicating or recording specially adapted for thermometers
    • G01K1/024—Means for indicating or recording specially adapted for thermometers for remote indication
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H10P72/0432—

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
DE69428086T 1993-09-20 1994-09-15 Verfahren zur Fernmessung von Prozessmesswerten Expired - Fee Related DE69428086T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/123,664 US5466614A (en) 1993-09-20 1993-09-20 Structure and method for remotely measuring process data

Publications (2)

Publication Number Publication Date
DE69428086D1 DE69428086D1 (de) 2001-10-04
DE69428086T2 true DE69428086T2 (de) 2002-03-28

Family

ID=22410077

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69428086T Expired - Fee Related DE69428086T2 (de) 1993-09-20 1994-09-15 Verfahren zur Fernmessung von Prozessmesswerten

Country Status (4)

Country Link
US (2) US5466614A (OSRAM)
EP (1) EP0644409B1 (OSRAM)
JP (1) JP3787644B2 (OSRAM)
DE (1) DE69428086T2 (OSRAM)

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US5902044A (en) * 1997-06-27 1999-05-11 International Business Machines Corporation Integrated hot spot detector for design, analysis, and control
US6030877A (en) * 1997-10-06 2000-02-29 Industrial Technology Research Institute Electroless gold plating method for forming inductor structures
US6278379B1 (en) * 1998-04-02 2001-08-21 Georgia Tech Research Corporation System, method, and sensors for sensing physical properties
DE19910983A1 (de) * 1999-03-12 2000-09-21 Bosch Gmbh Robert Vorrichtung und Verfahren zur Bestimmung der lateralen Unterätzung einer strukturierten Oberflächenschicht
JP4776783B2 (ja) 1999-05-07 2011-09-21 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2001242014A (ja) * 2000-02-29 2001-09-07 Tokyo Electron Ltd 基板の温度測定方法および処理方法
US20020045237A1 (en) * 2000-03-29 2002-04-18 Gouzel Karimova Bacterial two-hybrid system for protein-protein interaction screening, new strains for use therein, and their applications
CA2414724C (en) * 2002-12-18 2011-02-22 Cashcode Company Inc. Induction sensor using printed circuit
TWI268429B (en) * 2003-11-29 2006-12-11 Onwafer Technologies Inc Systems, maintenance units and substrate processing systems for wirelessly charging and wirelessly communicating with sensor apparatus as well as methods for wirelessly charging and communicating with sensor apparatus
KR100601956B1 (ko) * 2004-06-28 2006-07-14 삼성전자주식회사 자기장의 변화를 이용한 온도측정장치
JP4859610B2 (ja) 2006-09-29 2012-01-25 富士通セミコンダクター株式会社 バッファ回路及びその制御方法
JP5049018B2 (ja) * 2007-01-09 2012-10-17 ソニーモバイルコミュニケーションズ株式会社 非接触充電装置
JP5478874B2 (ja) * 2008-12-02 2014-04-23 株式会社フィルテック 基板、基板保持装置、解析装置、プログラム、検出システム、半導体デバイス、表示装置、および半導体製造装置
US8226294B2 (en) * 2009-08-31 2012-07-24 Arizant Healthcare Inc. Flexible deep tissue temperature measurement devices
US8292495B2 (en) 2010-04-07 2012-10-23 Arizant Healthcare Inc. Zero-heat-flux, deep tissue temperature measurement devices with thermal sensor calibration
US8292502B2 (en) * 2010-04-07 2012-10-23 Arizant Healthcare Inc. Constructions for zero-heat-flux, deep tissue temperature measurement devices
US9354122B2 (en) 2011-05-10 2016-05-31 3M Innovative Properties Company Zero-heat-flux, deep tissue temperature measurement system
AU2013388629A1 (en) * 2013-05-03 2015-11-19 3M Innovative Properties Company System for monitoring temperature of electrical conductor
US20240201022A1 (en) * 2021-11-17 2024-06-20 Caretech Services Pty Ltd Temperature detector for a heat sensitive material

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US2989691A (en) * 1956-05-28 1961-06-20 Gen Electric Temperature measuring apparatus
US3350760A (en) * 1959-02-06 1967-11-07 Texas Instruments Inc Capacitor for miniature electronic circuits or the like
US3234461A (en) * 1960-12-05 1966-02-08 Texas Instruments Inc Resistivity-measuring device including solid inductive sensor
US3338100A (en) * 1963-06-12 1967-08-29 Hitachi Ltd Non-contact resonant thermometer
US3320495A (en) * 1963-07-02 1967-05-16 Atomic Energy Commission Surface-barrier diode for detecting high energy particles and method for preparing same
US3391576A (en) * 1965-03-13 1968-07-09 Hitachi Ltd Thermometric device for rotating structures
US3544893A (en) * 1968-08-05 1970-12-01 Anatoly Ivanovich Savin Apparatus for noncontact measurement of semiconductor resistivity including a toroidal inductive coil with a gap
US3781506A (en) * 1972-07-28 1973-12-25 Gen Electric Non-contacting temperature measurement of inductively heated utensil and other objects
US4000458A (en) * 1975-08-21 1976-12-28 Bell Telephone Laboratories, Incorporated Method for the noncontacting measurement of the electrical conductivity of a lamella
JPS52111775A (en) * 1976-03-17 1977-09-19 Nippon Kokan Kk Temperature measuring instrument and method of using same
US4333225A (en) * 1978-12-18 1982-06-08 Xerox Corporation Method of making a circular high voltage field effect transistor
JPS5648145A (en) * 1979-09-28 1981-05-01 Hitachi Ltd Measurement for sheet resistance of semiconductor layer
DE3113557C2 (de) * 1981-04-03 1984-04-26 Siemens AG, 1000 Berlin und 8000 München Elektrische Meßeinrichtung für die Läufertemperatur elektrischer Maschinen
US4457794A (en) * 1982-06-25 1984-07-03 Matsushita Electric Industrial Co., Ltd. Method for manufacturing optical memory disc
GB8422360D0 (en) * 1984-09-05 1984-10-10 Kon I Thermometers
EP0261353A3 (de) * 1986-09-24 1989-02-01 Grapha-Holding Ag Messeinrichtung
JPH065691B2 (ja) * 1987-09-26 1994-01-19 株式会社東芝 半導体素子の試験方法および試験装置
JPH0623935B2 (ja) * 1988-02-09 1994-03-30 大日本スクリーン製造株式会社 再現性を高めた熱処理制御方法
EP0359922A1 (de) * 1988-09-13 1990-03-28 Landis & Gyr Betriebs AG Vorrichtung zur Messung eines magnetischen Feldes
NL8901079A (nl) * 1989-04-28 1990-11-16 Nedap Nv Passieve elektronische opnemer.
EP0406751A1 (de) * 1989-07-07 1991-01-09 Balzers Aktiengesellschaft Verfahren und Anordnung zur Ermittlung von Messdaten während der Behandlung von Scheiben
CA2045507A1 (en) * 1989-11-09 1991-05-10 Arthur F. Hogrefe Inductive coupled high temperature monitor
JPH07113664B2 (ja) * 1990-02-26 1995-12-06 シャープ株式会社 超電導磁界分布測定装置
US5119025A (en) * 1990-07-26 1992-06-02 Eastman Kodak Company High-sensitivity magnetorresistive magnetometer having laminated flux collectors defining an open-loop flux-conducting path
US5288649A (en) * 1991-09-30 1994-02-22 Texas Instruments Incorporated Method for forming uncooled infrared detector
US5370766A (en) * 1993-08-16 1994-12-06 California Micro Devices Methods for fabrication of thin film inductors, inductor networks and integration with other passive and active devices
US5439850A (en) * 1993-09-08 1995-08-08 North Carolina State University Method for forming a layer of uniform thickness on a semiconductor wafer during rapid thermal processing

Also Published As

Publication number Publication date
EP0644409B1 (en) 2001-08-29
DE69428086D1 (de) 2001-10-04
US5466614A (en) 1995-11-14
JP3787644B2 (ja) 2006-06-21
JPH07106392A (ja) 1995-04-21
EP0644409A3 (OSRAM) 1995-04-19
EP0644409A2 (en) 1995-03-22
US5576224A (en) 1996-11-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: FIENER, J., PAT.-ANW., 87719 MINDELHEIM

8339 Ceased/non-payment of the annual fee
8327 Change in the person/name/address of the patent owner

Owner name: HYNIX SEMICONDUCTOR INC., ICHON, KYONGGI, KR

Owner name: NCR INTERNATIONAL, INC., DAYTON, OHIO, US