DE69426148T2 - Pegelschieberschaltung - Google Patents

Pegelschieberschaltung

Info

Publication number
DE69426148T2
DE69426148T2 DE69426148T DE69426148T DE69426148T2 DE 69426148 T2 DE69426148 T2 DE 69426148T2 DE 69426148 T DE69426148 T DE 69426148T DE 69426148 T DE69426148 T DE 69426148T DE 69426148 T2 DE69426148 T2 DE 69426148T2
Authority
DE
Germany
Prior art keywords
level shifter
shifter circuit
circuit
level
shifter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69426148T
Other languages
English (en)
Other versions
DE69426148D1 (de
Inventor
Tetsuya Tanabe
Satoru Tanoi
Yasuhiro Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Publication of DE69426148D1 publication Critical patent/DE69426148D1/de
Application granted granted Critical
Publication of DE69426148T2 publication Critical patent/DE69426148T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356017—Bistable circuits using additional transistors in the input circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356017—Bistable circuits using additional transistors in the input circuit
    • H03K3/356052—Bistable circuits using additional transistors in the input circuit using pass gates
    • H03K3/35606—Bistable circuits using additional transistors in the input circuit using pass gates with synchronous operation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit
DE69426148T 1993-12-28 1994-12-27 Pegelschieberschaltung Expired - Fee Related DE69426148T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33821593A JP3625851B2 (ja) 1993-12-28 1993-12-28 レベルシフタ回路

Publications (2)

Publication Number Publication Date
DE69426148D1 DE69426148D1 (de) 2000-11-23
DE69426148T2 true DE69426148T2 (de) 2001-05-10

Family

ID=18316013

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69426148T Expired - Fee Related DE69426148T2 (de) 1993-12-28 1994-12-27 Pegelschieberschaltung

Country Status (5)

Country Link
US (1) US5659258A (de)
EP (1) EP0661811B1 (de)
JP (1) JP3625851B2 (de)
KR (1) KR100296783B1 (de)
DE (1) DE69426148T2 (de)

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KR100228529B1 (ko) * 1996-12-20 1999-11-01 윤종용 반도체 메모리 장치용 스케일러블 레벨 시프터
JP3730003B2 (ja) * 1997-02-18 2005-12-21 株式会社東芝 半導体装置
US5910734A (en) * 1997-02-20 1999-06-08 Micron Technology, Inc. Voltage level translator
US5977798A (en) * 1997-02-28 1999-11-02 Rambus Incorporated Low-latency small-swing clocked receiver
JP4074690B2 (ja) * 1997-09-17 2008-04-09 株式会社ルネサステクノロジ 電圧レベル変換回路
JP3796034B2 (ja) * 1997-12-26 2006-07-12 株式会社ルネサステクノロジ レベル変換回路および半導体集積回路装置
US6054875A (en) * 1997-12-31 2000-04-25 Intel Corporation Output buffer for a mixed voltage environment
JPH11205140A (ja) * 1998-01-07 1999-07-30 Mitsubishi Electric Corp アナログデジタル変換器及びレベルシフタ
JP3695967B2 (ja) 1998-11-16 2005-09-14 株式会社東芝 半導体集積回路装置
US6366061B1 (en) 1999-01-13 2002-04-02 Carnegie Mellon University Multiple power supply circuit architecture
GB9920172D0 (en) * 1999-08-25 1999-10-27 Sgs Thomson Microelectronics Cmos switching cicuitry
GB9926072D0 (en) * 1999-11-03 2000-01-12 Sgs Thomson Microelectronics Switching circuit
US6535018B1 (en) 2000-07-26 2003-03-18 Cirrus Logic, Inc. Voltage level shifting circuits and methods and systems using the same
AU2001257509A1 (en) * 2000-06-09 2001-12-24 Cirrus Logic, Inc. Voltage level shifter
WO2001095489A1 (en) * 2000-06-09 2001-12-13 Cirrus Logic, Inc. Voltage level shifting circuits and methods and systems using the same
JP3532153B2 (ja) * 2000-12-22 2004-05-31 沖電気工業株式会社 レベルシフタ制御回路
US6683486B2 (en) * 2002-04-02 2004-01-27 Infineon Technologies Ag Low voltage shifter with latching function
TWI257769B (en) * 2002-06-11 2006-07-01 Au Optronics Corp Level shifting circuit
JP4002847B2 (ja) * 2003-01-31 2007-11-07 松下電器産業株式会社 自動遅延調整機能付きレベル変換回路
US6995598B2 (en) * 2003-02-13 2006-02-07 Texas Instruments Incorporated Level shifter circuit including a set/reset circuit
US6842043B1 (en) 2003-03-11 2005-01-11 Xilinx, Inc. High-speed, low current level shifter circuits for integrated circuits having multiple power supplies
DE10349464B4 (de) * 2003-10-23 2009-07-30 Qimonda Ag Pegelumsetz-Einrichtung
JP4249597B2 (ja) * 2003-11-13 2009-04-02 新日本無線株式会社 レベルシフト回路
TWI242294B (en) * 2004-12-07 2005-10-21 Silicon Touch Tech Inc An accelerated circuit for lightening/turning off LED
KR100762679B1 (ko) * 2006-02-09 2007-10-01 삼성에스디아이 주식회사 레벨 쉬프터
US7646233B2 (en) 2006-05-11 2010-01-12 Dsm Solutions, Inc. Level shifting circuit having junction field effect transistors
US20080024188A1 (en) * 2006-07-28 2008-01-31 Chou Richard K Junction field effect transistor level shifting circuit
EP2080273B1 (de) * 2006-11-10 2018-09-05 Skyworks Solutions, Inc. Kompakter verlustarmer hochfrequenzschalter mit verbesserter linearitäts-performance
JP4939285B2 (ja) * 2007-04-09 2012-05-23 ラピスセミコンダクタ株式会社 レベルシフタ
US7511556B2 (en) * 2007-08-24 2009-03-31 Ili Technology Corp. Multi-function circuit module having voltage level shifting function and data latching function
US7659768B2 (en) * 2007-12-28 2010-02-09 Advanced Micro Devices, Inc. Reduced leakage voltage level shifting circuit
US7710183B2 (en) * 2008-09-04 2010-05-04 Qualcomm Incorporated CMOS level shifter circuit design
US20100264975A1 (en) * 2009-04-17 2010-10-21 Scott Gregory S Level Shifter with Rise/Fall Delay Matching
US20100321083A1 (en) * 2009-06-22 2010-12-23 International Business Machines Corporation Voltage Level Translating Circuit
US8502591B2 (en) * 2010-07-09 2013-08-06 Hynix Semiconductor Inc. High voltage control circuit of semiconductor device
KR101931408B1 (ko) * 2012-08-01 2018-12-20 르네사스 일렉트로닉스 가부시키가이샤 레벨 시프트 회로, 반도체 장치
US9531360B1 (en) * 2014-04-24 2016-12-27 Marvell International Ltd. High speed comparator
JP6030741B2 (ja) * 2015-12-04 2016-11-24 ルネサスエレクトロニクス株式会社 レベルシフト回路
JP7024357B2 (ja) * 2017-11-29 2022-02-24 セイコーエプソン株式会社 電子回路および電子機器
CN108847841A (zh) * 2018-07-04 2018-11-20 电子科技大学 电平转换电路
WO2023073904A1 (ja) 2021-10-29 2023-05-04 株式会社ソシオネクスト レベルシフト回路

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4169233A (en) * 1978-02-24 1979-09-25 Rockwell International Corporation High performance CMOS sense amplifier
US4318015A (en) * 1979-06-29 1982-03-02 Rca Corporation Level shift circuit
US4561702A (en) * 1984-05-09 1985-12-31 Texas Instruments Incorporated CMOS Address buffer circuit
US4644185A (en) * 1985-05-03 1987-02-17 National Semiconductor Corporation Self clocking CMOS latch
JPS63304495A (ja) * 1987-06-03 1988-12-12 Toshiba Corp 半導体集積回路
US4843264A (en) * 1987-11-25 1989-06-27 Visic, Inc. Dynamic sense amplifier for CMOS static RAM
US4831287A (en) * 1988-04-11 1989-05-16 Motorola, Inc. Latching sense amplifier
EP0407591B1 (de) * 1988-10-11 1996-08-21 Oki Electric Industry Co., Ltd. Schaltung für einen differentiellen kreisverstärker
US4897567A (en) * 1988-10-13 1990-01-30 Harris Corporation Fast level translator circuit
KR920006980B1 (ko) * 1989-11-28 1992-08-22 현대전자산업주식회사 이중 파워라인을 갖는 다이나믹램의 센스증폭기
US5144162A (en) * 1990-07-13 1992-09-01 Texas Instruments Incorporated High speed signal driving scheme
US5068551A (en) * 1990-09-21 1991-11-26 National Semiconductor Corporation Apparatus and method for translating ECL signals to CMOS signals
US5148061A (en) * 1991-02-27 1992-09-15 Motorola, Inc. ECL to CMOS translation and latch logic circuit
US5243236A (en) * 1991-12-31 1993-09-07 Intel Corporation High voltage CMOS switch with protection against diffusion to well reverse junction breakdown
US5321324A (en) * 1993-01-28 1994-06-14 United Memories, Inc. Low-to-high voltage translator with latch-up immunity
JP3173247B2 (ja) * 1993-09-29 2001-06-04 ソニー株式会社 レベルシフタ

Also Published As

Publication number Publication date
JP3625851B2 (ja) 2005-03-02
EP0661811B1 (de) 2000-10-18
DE69426148D1 (de) 2000-11-23
JPH07202650A (ja) 1995-08-04
KR950020706A (ko) 1995-07-24
KR100296783B1 (ko) 2001-10-24
EP0661811A2 (de) 1995-07-05
EP0661811A3 (de) 1996-08-14
US5659258A (en) 1997-08-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee