DE69421545T2 - Gasdiffusionsplatte und radiofrequenzelektrode - Google Patents

Gasdiffusionsplatte und radiofrequenzelektrode

Info

Publication number
DE69421545T2
DE69421545T2 DE69421545T DE69421545T DE69421545T2 DE 69421545 T2 DE69421545 T2 DE 69421545T2 DE 69421545 T DE69421545 T DE 69421545T DE 69421545 T DE69421545 T DE 69421545T DE 69421545 T2 DE69421545 T2 DE 69421545T2
Authority
DE
Germany
Prior art keywords
radio frequency
gas diffusion
diffusion plate
frequency electrode
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69421545T
Other languages
English (en)
Other versions
DE69421545D1 (de
Inventor
James Vanell
Al Garcia
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of DE69421545D1 publication Critical patent/DE69421545D1/de
Publication of DE69421545T2 publication Critical patent/DE69421545T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45559—Diffusion of reactive gas to substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
DE69421545T 1993-12-14 1994-11-22 Gasdiffusionsplatte und radiofrequenzelektrode Expired - Lifetime DE69421545T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/166,745 US5647911A (en) 1993-12-14 1993-12-14 Gas diffuser plate assembly and RF electrode
PCT/US1994/013531 WO1995016804A1 (en) 1993-12-14 1994-11-22 Gas diffuser plate assembly and rf electrode

Publications (2)

Publication Number Publication Date
DE69421545D1 DE69421545D1 (de) 1999-12-09
DE69421545T2 true DE69421545T2 (de) 2000-03-23

Family

ID=22604539

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69421545T Expired - Lifetime DE69421545T2 (de) 1993-12-14 1994-11-22 Gasdiffusionsplatte und radiofrequenzelektrode

Country Status (9)

Country Link
US (2) US5647911A (de)
EP (1) EP0734463B1 (de)
JP (2) JP3311358B2 (de)
KR (1) KR100330295B1 (de)
AU (1) AU1212195A (de)
CA (1) CA2177605A1 (de)
DE (1) DE69421545T2 (de)
TW (1) TW332304B (de)
WO (1) WO1995016804A1 (de)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5628829A (en) 1994-06-03 1997-05-13 Materials Research Corporation Method and apparatus for low temperature deposition of CVD and PECVD films
US5665640A (en) * 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
DE19719716A1 (de) * 1996-05-10 1997-11-13 Sumitomo Chemical Co Vorrichtung zur Herstellung eines Verbundhalbleiters
US5849076A (en) * 1996-07-26 1998-12-15 Memc Electronic Materials, Inc. Cooling system and method for epitaxial barrel reactor
US5882414A (en) * 1996-09-09 1999-03-16 Applied Materials, Inc. Method and apparatus for self-cleaning a blocker plate
KR100436543B1 (ko) * 1997-08-14 2004-07-16 삼성전자주식회사 열전달을 차단하는 절연체를 갖는 건식 에칭장비
US6021738A (en) * 1998-03-04 2000-02-08 Compuvac Systems, Inc. Carriage electrode contact system used in coating objects by vacuum deposit
KR100328820B1 (ko) * 1999-02-25 2002-03-14 박종섭 화학기상증착 장비의 가스분사장치
US6477980B1 (en) 2000-01-20 2002-11-12 Applied Materials, Inc. Flexibly suspended gas distribution manifold for plasma chamber
US6772827B2 (en) * 2000-01-20 2004-08-10 Applied Materials, Inc. Suspended gas distribution manifold for plasma chamber
US6537419B1 (en) 2000-04-26 2003-03-25 David W. Kinnard Gas distribution plate assembly for providing laminar gas flow across the surface of a substrate
US6635117B1 (en) 2000-04-26 2003-10-21 Axcelis Technologies, Inc. Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system
KR100639517B1 (ko) * 2000-06-09 2006-10-27 주성엔지니어링(주) 확산기를 구비한 ｃｖｄ 장비
JP2002129334A (ja) * 2000-10-26 2002-05-09 Applied Materials Inc 気相堆積装置のクリーニング方法及び気相堆積装置
US7037574B2 (en) 2001-05-23 2006-05-02 Veeco Instruments, Inc. Atomic layer deposition for fabricating thin films
TWI294155B (en) * 2002-06-21 2008-03-01 Applied Materials Inc Transfer chamber for vacuum processing system
US7543547B1 (en) * 2002-07-31 2009-06-09 Lam Research Corporation Electrode assembly for plasma processing apparatus
US7316761B2 (en) * 2003-02-03 2008-01-08 Applied Materials, Inc. Apparatus for uniformly etching a dielectric layer
US7071118B2 (en) * 2003-11-12 2006-07-04 Veeco Instruments, Inc. Method and apparatus for fabricating a conformal thin film on a substrate
JP4698251B2 (ja) * 2004-02-24 2011-06-08 アプライド マテリアルズ インコーポレイテッド 可動又は柔軟なシャワーヘッド取り付け
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US8328939B2 (en) * 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
US8074599B2 (en) * 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
CN101866828B (zh) * 2004-06-02 2013-03-20 应用材料公司 电子装置制造室及其形成方法
US7784164B2 (en) * 2004-06-02 2010-08-31 Applied Materials, Inc. Electronic device manufacturing chamber method
US20060021703A1 (en) * 2004-07-29 2006-02-02 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
US7429410B2 (en) * 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
US20060185590A1 (en) * 2005-02-18 2006-08-24 General Electric Company High temperature chemical vapor deposition apparatus
US20060185591A1 (en) * 2005-02-18 2006-08-24 General Electric Company High temperature chemical vapor deposition apparatus
JP4664119B2 (ja) * 2005-05-17 2011-04-06 東京エレクトロン株式会社 プラズマ処理装置
US20060272577A1 (en) * 2005-06-03 2006-12-07 Ming Mao Method and apparatus for decreasing deposition time of a thin film
US20070044714A1 (en) * 2005-08-31 2007-03-01 Applied Materials, Inc. Method and apparatus for maintaining a cross sectional shape of a diffuser during processing
US7641762B2 (en) * 2005-09-02 2010-01-05 Applied Materials, Inc. Gas sealing skirt for suspended showerhead in process chamber
US7776178B2 (en) * 2006-10-25 2010-08-17 Applied Materials, Inc. Suspension for showerhead in process chamber
US20080317973A1 (en) * 2007-06-22 2008-12-25 White John M Diffuser support
US20080314311A1 (en) * 2007-06-24 2008-12-25 Burrows Brian H Hvpe showerhead design
JP5286733B2 (ja) * 2007-10-03 2013-09-11 富士電機株式会社 プラズマ処理装置
US20090149008A1 (en) * 2007-10-05 2009-06-11 Applied Materials, Inc. Method for depositing group iii/v compounds
WO2010011397A2 (en) * 2008-05-13 2010-01-28 Northwestern University Scanning probe epitaxy
US8491720B2 (en) * 2009-04-10 2013-07-23 Applied Materials, Inc. HVPE precursor source hardware
US8183132B2 (en) 2009-04-10 2012-05-22 Applied Materials, Inc. Methods for fabricating group III nitride structures with a cluster tool
WO2010124261A2 (en) * 2009-04-24 2010-10-28 Applied Materials, Inc. Substrate pretreatment for subsequent high temperature group iii depositions
US20100273291A1 (en) * 2009-04-28 2010-10-28 Applied Materials, Inc. Decontamination of mocvd chamber using nh3 purge after in-situ cleaning
CN102414797A (zh) * 2009-04-29 2012-04-11 应用材料公司 在HVPE中形成原位预GaN沉积层的方法
US9449859B2 (en) * 2009-10-09 2016-09-20 Applied Materials, Inc. Multi-gas centrally cooled showerhead design
US20110256692A1 (en) 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
TWI534291B (zh) 2011-03-18 2016-05-21 應用材料股份有限公司 噴淋頭組件
JP5950789B2 (ja) * 2011-11-22 2016-07-13 株式会社神戸製鋼所 プラズマ発生源の冷却機構及び冷却方法
US20140356985A1 (en) * 2013-06-03 2014-12-04 Lam Research Corporation Temperature controlled substrate support assembly
US10370764B2 (en) * 2013-11-06 2019-08-06 Applied Materials, Inc. Isolator for a substrate processing chamber
US9290843B2 (en) 2014-02-11 2016-03-22 Lam Research Corporation Ball screw showerhead module adjuster assembly for showerhead module of semiconductor substrate processing apparatus
US10594015B2 (en) * 2017-05-31 2020-03-17 Intel Corporation Dual purpose heat pipe and antenna apparatus
KR102431354B1 (ko) 2017-07-11 2022-08-11 삼성디스플레이 주식회사 화학기상 증착장치 및 이를 이용한 표시 장치의 제조 방법
DE102017223592B4 (de) 2017-12-21 2023-11-09 Meyer Burger (Germany) Gmbh System zur elektrisch entkoppelten, homogenen Temperierung einer Elektrode mittels Wärmeleitrohren sowie Bearbeitungsanlage mit einem solchen System
RU2719577C1 (ru) * 2019-11-05 2020-04-21 Федеральное государственное бюджетное учреждение "33 Центральный научно-исследовательский испытательный институт" Министерства обороны Российской Федерации Установка для очистки водных сред, загрязненных соединениями мышьяка

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1894593A (en) * 1929-05-08 1933-01-17 Asea Ab Cooling device for anodes in metal vapor rectifiers
GB1022360A (en) * 1961-12-13 1966-03-09 Berghaus Elektrophysik Anst Method of and apparatus for coating an article
US3735175A (en) * 1971-03-15 1973-05-22 Inter Probe Method and apparatus for removing heat from within a vacuum and from within a mass
US3916822A (en) * 1974-04-26 1975-11-04 Bell Telephone Labor Inc Chemical vapor deposition reactor
US4261762A (en) * 1979-09-14 1981-04-14 Eaton Corporation Method for conducting heat to or from an article being treated under vacuum
US4743570A (en) * 1979-12-21 1988-05-10 Varian Associates, Inc. Method of thermal treatment of a wafer in an evacuated environment
US4340462A (en) * 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
FR2514033B1 (fr) * 1981-10-02 1985-09-27 Henaff Louis Installation pour le depot de couches minces en grande surface en phase vapeur reactive par plasma
US4516631A (en) * 1981-11-04 1985-05-14 Combustion Engineering, Inc. Nozzle cooled by heat pipe means
US4512391A (en) * 1982-01-29 1985-04-23 Varian Associates, Inc. Apparatus for thermal treatment of semiconductor wafers by gas conduction incorporating peripheral gas inlet
US4599135A (en) * 1983-09-30 1986-07-08 Hitachi, Ltd. Thin film deposition
JPS60137016A (ja) * 1983-12-26 1985-07-20 Mitsubishi Electric Corp 成膜装置
US4629635A (en) * 1984-03-16 1986-12-16 Genus, Inc. Process for depositing a low resistivity tungsten silicon composite film on a substrate
DE3606959A1 (de) * 1986-03-04 1987-09-10 Leybold Heraeus Gmbh & Co Kg Vorrichtung zur plasmabehandlung von substraten in einer durch hochfrequenz angeregten plasmaentladung
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US4976996A (en) * 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
KR930003136B1 (ko) * 1987-10-14 1993-04-22 후루가와덴기 고오교오 가부시기가이샤 프라즈마 cvd에 의한 박막 형성장치
US4834020A (en) * 1987-12-04 1989-05-30 Watkins-Johnson Company Atmospheric pressure chemical vapor deposition apparatus
DD271776A1 (de) * 1988-05-06 1989-09-13 Elektromat Veb Vorrichtung zur gaszufuehrung und -ableitung fuer die gasphasenbearbeitung von werkstuecken
DE4109619C1 (de) * 1991-03-23 1992-08-06 Leybold Ag, 6450 Hanau, De
FR2682047B1 (fr) * 1991-10-07 1993-11-12 Commissariat A Energie Atomique Reacteur de traitement chimique en phase gazeuse.
US5376224A (en) * 1992-02-27 1994-12-27 Hughes Aircraft Company Method and apparatus for non-contact plasma polishing and smoothing of uniformly thinned substrates
JP3242166B2 (ja) * 1992-11-19 2001-12-25 株式会社日立製作所 エッチング装置
JPH0711446A (ja) * 1993-05-27 1995-01-13 Applied Materials Inc 気相成長用サセプタ装置
US5449410A (en) * 1993-07-28 1995-09-12 Applied Materials, Inc. Plasma processing apparatus

Also Published As

Publication number Publication date
TW332304B (en) 1998-05-21
US5647911A (en) 1997-07-15
EP0734463A1 (de) 1996-10-02
WO1995016804A1 (en) 1995-06-22
JP2002339070A (ja) 2002-11-27
JPH09506673A (ja) 1997-06-30
US5908508A (en) 1999-06-01
DE69421545D1 (de) 1999-12-09
EP0734463B1 (de) 1999-11-03
JP3790176B2 (ja) 2006-06-28
JP3311358B2 (ja) 2002-08-05
AU1212195A (en) 1995-07-03
KR100330295B1 (ko) 2002-11-30
KR960706572A (ko) 1996-12-09
CA2177605A1 (en) 1995-06-22

Similar Documents

Publication Publication Date Title
DE69421545T2 (de) Gasdiffusionsplatte und radiofrequenzelektrode
GB2297013B (en) Portable radio telephones and methods of operation
EE9900308A (et) Meetodid ja süsteemid kärgmobiilterminalide töötamiseks piiratud võimsusel
EP0589594A3 (de) Zellulartelefon-Basisstation mit Frequenz-multiplex und Betriebsverfahren dafür.
DE69740067D1 (de) Plattenstruktur und Reibschweissverfahren
DE69428613T2 (de) Tragbarer Telefonapparat und Zusatzvorrichtung dafür
DE69024975T2 (de) Spektrumerfassung von lichtbögen und radiofrequenzen
DE69331299T2 (de) Tragbares Funktelefon
DE69714308D1 (de) Gasentladungsanzeigetafel und Herstellungsverfahren derselben
DE69718741D1 (de) Integrierter Oszillator und einen solchen Oszillator verwendendes Funktelefon
DE69407902T2 (de) Verstärkungsstufe und Oszillator
DE69315542D1 (de) Portables Funkgerät
DE69514317T2 (de) Brennstoffzellenanode und Brennstoffzelle
DE69620527T2 (de) Gasentladungslampen und Vorrichtungen
DE69605304T2 (de) Antennenanordnung und funkgerät
DE59806680D1 (de) Schild und Mähteller
BR9305713A (pt) Módulo de rádio e estrutura base de rádio
DE69737616D1 (de) Frequenzfehlermessgerät und Funkgerät
DE69526824D1 (de) Portables Funkgerät
GB2330706B (en) Pll frequency synthesizer and portable terminal employing the pll frequency synthesizer
DE69606750T2 (de) Mikrowellen-Oszillator und diesen verwendender Abwärts-Umsetzer
GB9408467D0 (en) Portable radio apparatus and mount structure therefor
KR970063356U (ko) 가스레인지와 그 탑플레이트 및 그레이트의 구조
DE29721594U1 (de) Computer und funkgesteuerte Alarmzentrale
DE9303874U1 (de) Elektroden und Elektrolytmaterial

Legal Events

Date Code Title Description
8364 No opposition during term of opposition