DE69421156D1 - Steuerverfahren für eine Halbleiterspeicherschaltung - Google Patents

Steuerverfahren für eine Halbleiterspeicherschaltung

Info

Publication number
DE69421156D1
DE69421156D1 DE69421156T DE69421156T DE69421156D1 DE 69421156 D1 DE69421156 D1 DE 69421156D1 DE 69421156 T DE69421156 T DE 69421156T DE 69421156 T DE69421156 T DE 69421156T DE 69421156 D1 DE69421156 D1 DE 69421156D1
Authority
DE
Germany
Prior art keywords
control method
semiconductor memory
memory circuit
circuit
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69421156T
Other languages
English (en)
Other versions
DE69421156T2 (de
Inventor
Yasuji Koshikawa
Yasuhiro Takai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69421156D1 publication Critical patent/DE69421156D1/de
Publication of DE69421156T2 publication Critical patent/DE69421156T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2218—Late write

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
DE69421156T 1993-12-24 1994-12-23 Steuerverfahren für eine Halbleiterspeicherschaltung Expired - Lifetime DE69421156T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5327063A JP2734957B2 (ja) 1993-12-24 1993-12-24 半導体記憶回路の制御方法

Publications (2)

Publication Number Publication Date
DE69421156D1 true DE69421156D1 (de) 1999-11-18
DE69421156T2 DE69421156T2 (de) 2000-08-17

Family

ID=18194890

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69421156T Expired - Lifetime DE69421156T2 (de) 1993-12-24 1994-12-23 Steuerverfahren für eine Halbleiterspeicherschaltung

Country Status (5)

Country Link
US (1) US5539693A (de)
EP (1) EP0660328B1 (de)
JP (1) JP2734957B2 (de)
KR (1) KR0147011B1 (de)
DE (1) DE69421156T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3183321B2 (ja) * 1995-11-10 2001-07-09 日本電気株式会社 半導体記憶装置
US5715476A (en) * 1995-12-29 1998-02-03 Intel Corporation Method and apparatus for controlling linear and toggle mode burst access sequences using toggle mode increment logic
JP3277112B2 (ja) * 1996-01-31 2002-04-22 株式会社東芝 半導体記憶装置
US5666324A (en) * 1996-03-15 1997-09-09 Mitsubishi Denki Kabushiki Kaisha Clock synchronous semiconductor memory device having current consumption reduced
JPH09312553A (ja) * 1996-05-22 1997-12-02 Nec Corp 論理回路
JPH1055674A (ja) * 1996-08-09 1998-02-24 Nec Corp 半導体記憶装置
US5745427A (en) * 1996-12-27 1998-04-28 Lucent Technologies Inc. Phase-shifted embedded ram apparatus and method
KR100270959B1 (ko) * 1998-07-07 2000-11-01 윤종용 반도체 메모리 장치

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6421786A (en) * 1987-07-15 1989-01-25 Nec Corp Semiconductor memory
JP3179788B2 (ja) * 1991-01-17 2001-06-25 三菱電機株式会社 半導体記憶装置
JPH04295693A (ja) * 1991-03-20 1992-10-20 Mitsubishi Electric Corp 半導体記憶装置
JP3992757B2 (ja) * 1991-04-23 2007-10-17 テキサス インスツルメンツ インコーポレイテツド マイクロプロセッサと同期するメモリ、及びデータプロセッサ、同期メモリ、周辺装置とシステムクロックを含むシステム
JP2830594B2 (ja) * 1992-03-26 1998-12-02 日本電気株式会社 半導体メモリ装置
JPH06290582A (ja) * 1993-04-02 1994-10-18 Nec Corp 半導体記憶装置

Also Published As

Publication number Publication date
JPH07182854A (ja) 1995-07-21
EP0660328B1 (de) 1999-10-13
EP0660328A3 (de) 1996-06-26
KR0147011B1 (ko) 1998-09-15
DE69421156T2 (de) 2000-08-17
US5539693A (en) 1996-07-23
JP2734957B2 (ja) 1998-04-02
KR950020127A (ko) 1995-07-24
EP0660328A2 (de) 1995-06-28

Similar Documents

Publication Publication Date Title
DE69630858D1 (de) Vorladungsschaltung für eine Halbleiterspeicheranordnung
DE9422048U1 (de) Wortleitungstreiberschaltkreis für eine Halbleiterspeichereinrichtung
DE69021429T2 (de) Speicherzugriffssteuerschaltung für Grafik-Steuergerät.
DE69524507T2 (de) Selbst-Programmierschaltung für eine nicht-flüchtige Speicheranordnung
DE69613447T2 (de) Steuerkreislauf für eine Baumaschine
DE69430683D1 (de) Halbleiterspeicheranordnung
DE69406074D1 (de) Integrierte Halbleiterspeicherschaltung
DE69430076T2 (de) Halbleiterspeicher und Zugriffverfahren für solchen Speicher
DE69518793T2 (de) Herstellungsverfahren für eine Halbleitervorrichtung
DE69326493D1 (de) Zugriffsverfahren für eine synchrone Halbleiterspeicheranordnung
DE69427443T2 (de) Halbleiterspeicheranordnung
DE69433288D1 (de) Halbleiterspeicheranordnung
DE69423077T2 (de) Steuerungsvorrichtungen für nichtflüchtige Speicheranordnungen
DE69022644T2 (de) Steuerschaltung für den Datenausgang für eine Halbleiterspeicheranordnung.
EP0645776A3 (de) Halbleiterspeichergerät zur Ausführung einer Speicherprüfung.
DE68920233D1 (de) Steuerschaltung für eine Halbleiterspeicheranordnung und Halbleiterspeichersystem.
DE69230159D1 (de) Steuerschaltung für Zwei-Torspeicher
KR900012267A (ko) 반도체 메모리용 센스회로
DE69412234T2 (de) Redundanzschaltung für eine Halbleiter-Speicheranordnung
DE69030433T2 (de) Herstellungsmethode für Halbleiterspeicher
DE69528979D1 (de) Ablaufsteuerung für eine Startschaltung
DE69421156D1 (de) Steuerverfahren für eine Halbleiterspeicherschaltung
IT1274305B (it) Dispositivo a semiconduttore di memoria
DE69322223D1 (de) Kontaktierungsverfahren für eine Halbleitervorrichtung
DE69211608T2 (de) Herstellungsmethode für Halbleiterspeicher

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC CORP., TOKIO/TOKYO, JP

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

R082 Change of representative

Ref document number: 660328

Country of ref document: EP

Representative=s name: BETTEN & RESCH, DE

R081 Change of applicant/patentee

Ref document number: 660328

Country of ref document: EP

Owner name: RENESAS ELECTRONICS CORPORATION, JP

Free format text: FORMER OWNER: NEC ELECTRONICS CORP., KAWASAKI, JP

Effective date: 20120828

R082 Change of representative

Ref document number: 660328

Country of ref document: EP

Representative=s name: PATENTANWAELTE BETTEN & RESCH, DE

Effective date: 20120828