DE69408567D1 - Herstellungsverfahren von dünnen und dicken metallischen Schichten - Google Patents

Herstellungsverfahren von dünnen und dicken metallischen Schichten

Info

Publication number
DE69408567D1
DE69408567D1 DE69408567T DE69408567T DE69408567D1 DE 69408567 D1 DE69408567 D1 DE 69408567D1 DE 69408567 T DE69408567 T DE 69408567T DE 69408567 T DE69408567 T DE 69408567T DE 69408567 D1 DE69408567 D1 DE 69408567D1
Authority
DE
Germany
Prior art keywords
thin
manufacturing process
metallic layers
thick metallic
thick
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69408567T
Other languages
English (en)
Other versions
DE69408567T2 (de
Inventor
Jean Jimenez
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Publication of DE69408567D1 publication Critical patent/DE69408567D1/de
Application granted granted Critical
Publication of DE69408567T2 publication Critical patent/DE69408567T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE69408567T 1993-12-03 1994-11-30 Herstellungsverfahren von dünnen und dicken metallischen Schichten Expired - Fee Related DE69408567T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9314744A FR2713397B1 (fr) 1993-12-03 1993-12-03 Procédé de formation de couches métalliques minces et épaisses.

Publications (2)

Publication Number Publication Date
DE69408567D1 true DE69408567D1 (de) 1998-03-26
DE69408567T2 DE69408567T2 (de) 1998-09-10

Family

ID=9453711

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69408567T Expired - Fee Related DE69408567T2 (de) 1993-12-03 1994-11-30 Herstellungsverfahren von dünnen und dicken metallischen Schichten

Country Status (6)

Country Link
US (1) US5543358A (de)
EP (1) EP0658931B1 (de)
JP (1) JP2573912B2 (de)
CN (1) CN1051401C (de)
DE (1) DE69408567T2 (de)
FR (1) FR2713397B1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980060606A (ko) * 1996-12-31 1998-10-07 김영환 반도체 소자의 금속배선 형성 방법
US6828230B2 (en) * 1997-09-12 2004-12-07 Micron Technology, Inc. Integrated circuit having conductive paths of different heights formed from the same layer structure and method for forming the same
US6169664B1 (en) * 1998-01-05 2001-01-02 Texas Instruments Incorporated Selective performance enhancements for interconnect conducting paths
KR100572565B1 (ko) * 2001-07-02 2006-04-24 마쯔시다덴기산교 가부시키가이샤 탄성 표면파 장치의 제조방법
DK200101287A (da) * 2001-08-31 2003-03-01 Bang & Olufsen As Udlæsningsenhed og fremgangsmåde til dens fremstilling
US20040192059A1 (en) * 2003-03-28 2004-09-30 Mosel Vitelic, Inc. Method for etching a titanium-containing layer prior to etching an aluminum layer in a metal stack

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3775838A (en) * 1972-04-24 1973-12-04 Olivetti & Co Spa Integrated circuit package and construction technique
IT1213261B (it) * 1984-12-20 1989-12-14 Sgs Thomson Microelectronics Dispositivo a semiconduttore con metallizzazione a piu' spessori eprocedimento per la sua fabbricazione.
DE3684497D1 (de) * 1985-03-19 1992-04-30 Fairchild Semiconductor Platzsparende dicke verbindungsstruktur fuer sammelleitungsmetallisierung.
US5111276A (en) * 1985-03-19 1992-05-05 National Semiconductor Corp. Thick bus metallization interconnect structure to reduce bus area
JPS6233425A (ja) * 1985-08-07 1987-02-13 Agency Of Ind Science & Technol 電極の形成方法
JP2897248B2 (ja) * 1989-04-18 1999-05-31 富士通株式会社 半導体装置の製造方法
JPH04372133A (ja) * 1991-06-21 1992-12-25 Nec Corp 半導体集積回路及びその製造方法

Also Published As

Publication number Publication date
JP2573912B2 (ja) 1997-01-22
FR2713397B1 (fr) 1996-02-16
CN1108003A (zh) 1995-09-06
CN1051401C (zh) 2000-04-12
DE69408567T2 (de) 1998-09-10
EP0658931A1 (de) 1995-06-21
US5543358A (en) 1996-08-06
FR2713397A1 (fr) 1995-06-09
JPH07201850A (ja) 1995-08-04
EP0658931B1 (de) 1998-02-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee