DE69011895T2
(de)
*
|
1989-02-20 |
1995-02-02 |
Nippon Steel Corp |
Vorrichtung zum Anritzen kornorientierter Elektrostahlbänder.
|
USRE40963E1
(en)
*
|
1993-01-12 |
2009-11-10 |
Tokyo Electron Limited |
Method for plasma processing by shaping an induced electric field
|
US5665167A
(en)
*
|
1993-02-16 |
1997-09-09 |
Tokyo Electron Kabushiki Kaisha |
Plasma treatment apparatus having a workpiece-side electrode grounding circuit
|
US5430355A
(en)
*
|
1993-07-30 |
1995-07-04 |
Texas Instruments Incorporated |
RF induction plasma source for plasma processing
|
US5614055A
(en)
*
|
1993-08-27 |
1997-03-25 |
Applied Materials, Inc. |
High density plasma CVD and etching reactor
|
US5619103A
(en)
*
|
1993-11-02 |
1997-04-08 |
Wisconsin Alumni Research Foundation |
Inductively coupled plasma generating devices
|
US5620523A
(en)
*
|
1994-04-11 |
1997-04-15 |
Canon Sales Co., Inc. |
Apparatus for forming film
|
US5587038A
(en)
*
|
1994-06-16 |
1996-12-24 |
Princeton University |
Apparatus and process for producing high density axially extending plasmas
|
US5580385A
(en)
|
1994-06-30 |
1996-12-03 |
Texas Instruments, Incorporated |
Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber
|
US5607542A
(en)
*
|
1994-11-01 |
1997-03-04 |
Applied Materials Inc. |
Inductively enhanced reactive ion etching
|
US5589737A
(en)
*
|
1994-12-06 |
1996-12-31 |
Lam Research Corporation |
Plasma processor for large workpieces
|
US5710486A
(en)
*
|
1995-05-08 |
1998-01-20 |
Applied Materials, Inc. |
Inductively and multi-capacitively coupled plasma reactor
|
US6238533B1
(en)
|
1995-08-07 |
2001-05-29 |
Applied Materials, Inc. |
Integrated PVD system for aluminum hole filling using ionized metal adhesion layer
|
US5962923A
(en)
|
1995-08-07 |
1999-10-05 |
Applied Materials, Inc. |
Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches
|
US5785878A
(en)
*
|
1995-11-02 |
1998-07-28 |
Applied Materials, Inc. |
RF antenna having high temperature, oxidation resistant coating
|
US6264812B1
(en)
|
1995-11-15 |
2001-07-24 |
Applied Materials, Inc. |
Method and apparatus for generating a plasma
|
US5922223A
(en)
*
|
1995-11-16 |
1999-07-13 |
Matsushita Electric Industrial Co., Ltd. |
Plasma processing method and apparatus
|
US5763851A
(en)
*
|
1995-11-27 |
1998-06-09 |
Applied Materials, Inc. |
Slotted RF coil shield for plasma deposition system
|
US6254746B1
(en)
|
1996-05-09 |
2001-07-03 |
Applied Materials, Inc. |
Recessed coil for generating a plasma
|
KR100489918B1
(ko)
*
|
1996-05-09 |
2005-08-04 |
어플라이드 머티어리얼스, 인코포레이티드 |
플라즈마발생및스퍼터링용코일
|
US6368469B1
(en)
*
|
1996-05-09 |
2002-04-09 |
Applied Materials, Inc. |
Coils for generating a plasma and for sputtering
|
US5800619A
(en)
*
|
1996-06-10 |
1998-09-01 |
Lam Research Corporation |
Vacuum plasma processor having coil with minimum magnetic field in its center
|
JP2000514136A
(ja)
|
1996-06-28 |
2000-10-24 |
ラム リサーチ コーポレイション |
高密度プラズマ化学蒸着装置および方法
|
US6013155A
(en)
*
|
1996-06-28 |
2000-01-11 |
Lam Research Corporation |
Gas injection system for plasma processing
|
US6209480B1
(en)
|
1996-07-10 |
2001-04-03 |
Mehrdad M. Moslehi |
Hermetically-sealed inductively-coupled plasma source structure and method of use
|
TW349234B
(en)
*
|
1996-07-15 |
1999-01-01 |
Applied Materials Inc |
RF plasma reactor with hybrid conductor and multi-radius dome ceiling
|
US6254737B1
(en)
|
1996-10-08 |
2001-07-03 |
Applied Materials, Inc. |
Active shield for generating a plasma for sputtering
|
US6190513B1
(en)
|
1997-05-14 |
2001-02-20 |
Applied Materials, Inc. |
Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition
|
US6514390B1
(en)
|
1996-10-17 |
2003-02-04 |
Applied Materials, Inc. |
Method to eliminate coil sputtering in an ICP source
|
US6308654B1
(en)
*
|
1996-10-18 |
2001-10-30 |
Applied Materials, Inc. |
Inductively coupled parallel-plate plasma reactor with a conical dome
|
US5961793A
(en)
*
|
1996-10-31 |
1999-10-05 |
Applied Materials, Inc. |
Method of reducing generation of particulate matter in a sputtering chamber
|
TW358964B
(en)
|
1996-11-21 |
1999-05-21 |
Applied Materials Inc |
Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma
|
US6184158B1
(en)
|
1996-12-23 |
2001-02-06 |
Lam Research Corporation |
Inductively coupled plasma CVD
|
US6599399B2
(en)
|
1997-03-07 |
2003-07-29 |
Applied Materials, Inc. |
Sputtering method to generate ionized metal plasma using electron beams and magnetic field
|
US6103070A
(en)
*
|
1997-05-14 |
2000-08-15 |
Applied Materials, Inc. |
Powered shield source for high density plasma
|
US6210539B1
(en)
|
1997-05-14 |
2001-04-03 |
Applied Materials, Inc. |
Method and apparatus for producing a uniform density plasma above a substrate
|
US6077402A
(en)
*
|
1997-05-16 |
2000-06-20 |
Applied Materials, Inc. |
Central coil design for ionized metal plasma deposition
|
US6652717B1
(en)
|
1997-05-16 |
2003-11-25 |
Applied Materials, Inc. |
Use of variable impedance to control coil sputter distribution
|
US6579426B1
(en)
|
1997-05-16 |
2003-06-17 |
Applied Materials, Inc. |
Use of variable impedance to control coil sputter distribution
|
US6361661B2
(en)
|
1997-05-16 |
2002-03-26 |
Applies Materials, Inc. |
Hybrid coil design for ionized deposition
|
US6071372A
(en)
|
1997-06-05 |
2000-06-06 |
Applied Materials, Inc. |
RF plasma etch reactor with internal inductive coil antenna and electrically conductive chamber walls
|
US6158384A
(en)
*
|
1997-06-05 |
2000-12-12 |
Applied Materials, Inc. |
Plasma reactor with multiple small internal inductive antennas
|
US6178920B1
(en)
*
|
1997-06-05 |
2001-01-30 |
Applied Materials, Inc. |
Plasma reactor with internal inductive antenna capable of generating helicon wave
|
US6042687A
(en)
*
|
1997-06-30 |
2000-03-28 |
Lam Research Corporation |
Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing
|
US5982100A
(en)
*
|
1997-07-28 |
1999-11-09 |
Pars, Inc. |
Inductively coupled plasma reactor
|
US6375810B2
(en)
|
1997-08-07 |
2002-04-23 |
Applied Materials, Inc. |
Plasma vapor deposition with coil sputtering
|
US6235169B1
(en)
|
1997-08-07 |
2001-05-22 |
Applied Materials, Inc. |
Modulated power for ionized metal plasma deposition
|
US6345588B1
(en)
|
1997-08-07 |
2002-02-12 |
Applied Materials, Inc. |
Use of variable RF generator to control coil voltage distribution
|
US6565717B1
(en)
|
1997-09-15 |
2003-05-20 |
Applied Materials, Inc. |
Apparatus for sputtering ionized material in a medium to high density plasma
|
US6042700A
(en)
*
|
1997-09-15 |
2000-03-28 |
Applied Materials, Inc. |
Adjustment of deposition uniformity in an inductively coupled plasma source
|
US6023038A
(en)
*
|
1997-09-16 |
2000-02-08 |
Applied Materials, Inc. |
Resistive heating of powered coil to reduce transient heating/start up effects multiple loadlock system
|
US6028285A
(en)
*
|
1997-11-19 |
2000-02-22 |
Board Of Regents, The University Of Texas System |
High density plasma source for semiconductor processing
|
US20050272254A1
(en)
*
|
1997-11-26 |
2005-12-08 |
Applied Materials, Inc. |
Method of depositing low resistivity barrier layers for copper interconnects
|
EP1034566A1
(de)
*
|
1997-11-26 |
2000-09-13 |
Applied Materials, Inc. |
Zerstörungsfreie beschichtungsmethode
|
US7253109B2
(en)
*
|
1997-11-26 |
2007-08-07 |
Applied Materials, Inc. |
Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
|
US6280579B1
(en)
|
1997-12-19 |
2001-08-28 |
Applied Materials, Inc. |
Target misalignment detector
|
US6506287B1
(en)
|
1998-03-16 |
2003-01-14 |
Applied Materials, Inc. |
Overlap design of one-turn coil
|
US6116186A
(en)
*
|
1998-03-19 |
2000-09-12 |
Applied Materials, Inc. |
Apparatus for cooling a plasma generator
|
US6155199A
(en)
*
|
1998-03-31 |
2000-12-05 |
Lam Research Corporation |
Parallel-antenna transformer-coupled plasma generation system
|
US6203657B1
(en)
|
1998-03-31 |
2001-03-20 |
Lam Research Corporation |
Inductively coupled plasma downstream strip module
|
US6146508A
(en)
*
|
1998-04-22 |
2000-11-14 |
Applied Materials, Inc. |
Sputtering method and apparatus with small diameter RF coil
|
US6164241A
(en)
|
1998-06-30 |
2000-12-26 |
Lam Research Corporation |
Multiple coil antenna for inductively-coupled plasma generation systems
|
US6660134B1
(en)
|
1998-07-10 |
2003-12-09 |
Applied Materials, Inc. |
Feedthrough overlap coil
|
US6132566A
(en)
*
|
1998-07-30 |
2000-10-17 |
Applied Materials, Inc. |
Apparatus and method for sputtering ionized material in a plasma
|
US6238528B1
(en)
|
1998-10-13 |
2001-05-29 |
Applied Materials, Inc. |
Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma source
|
GB2344930B
(en)
*
|
1998-12-17 |
2003-10-01 |
Trikon Holdings Ltd |
Inductive coil assembly
|
EP1020892B1
(de)
*
|
1999-01-14 |
2004-08-18 |
Vlaamse Instelling Voor Technologisch Onderzoek (Vito) |
Vorrichtung zum Aufbringen von Beschichtungen auf ein Substrat durch eine induktiv-angekoppelte magnetisch-begrenzte Plasmaquelle
|
US6217718B1
(en)
|
1999-02-17 |
2001-04-17 |
Applied Materials, Inc. |
Method and apparatus for reducing plasma nonuniformity across the surface of a substrate in apparatus for producing an ionized metal plasma
|
US6237526B1
(en)
|
1999-03-26 |
2001-05-29 |
Tokyo Electron Limited |
Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma
|
US6474258B2
(en)
|
1999-03-26 |
2002-11-05 |
Tokyo Electron Limited |
Apparatus and method for improving plasma distribution and performance in an inductively coupled plasma
|
US6441555B1
(en)
*
|
2000-03-31 |
2002-08-27 |
Lam Research Corporation |
Plasma excitation coil
|
JP5160717B2
(ja)
*
|
2000-07-06 |
2013-03-13 |
アプライド マテリアルズ インコーポレイテッド |
対称的な並列導体のコイルアンテナを有するプラズマリアクタ
|
US6494998B1
(en)
|
2000-08-30 |
2002-12-17 |
Tokyo Electron Limited |
Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma using an internal inductive element
|
US6471830B1
(en)
*
|
2000-10-03 |
2002-10-29 |
Veeco/Cvc, Inc. |
Inductively-coupled-plasma ionized physical-vapor deposition apparatus, method and system
|
US6534423B1
(en)
*
|
2000-12-27 |
2003-03-18 |
Novellus Systems, Inc. |
Use of inductively-coupled plasma in plasma-enhanced chemical vapor deposition reactor to improve film-to-wall adhesion following in-situ plasma clean
|
US20020170677A1
(en)
*
|
2001-04-07 |
2002-11-21 |
Tucker Steven D. |
RF power process apparatus and methods
|
KR20030041217A
(ko)
*
|
2001-11-19 |
2003-05-27 |
주성엔지니어링(주) |
Icp 발생 장치의 안테나 전극
|
US6946054B2
(en)
|
2002-02-22 |
2005-09-20 |
Tokyo Electron Limited |
Modified transfer function deposition baffles and high density plasma ignition therewith in semiconductor processing
|
US6903511B2
(en)
*
|
2003-05-06 |
2005-06-07 |
Zond, Inc. |
Generation of uniformly-distributed plasma
|
DE602004024993D1
(de)
|
2004-09-22 |
2010-02-25 |
Elwing Llc |
Antriebssystem für Raumfahrzeuge
|
CN100419944C
(zh)
*
|
2005-12-08 |
2008-09-17 |
北京北方微电子基地设备工艺研究中心有限责任公司 |
一种等离子处理线圈
|
US7591232B2
(en)
*
|
2006-03-31 |
2009-09-22 |
Tokyo Electron Limited |
Internal coil with segmented shield and inductively-coupled plasma source and processing system therewith
|
US8454810B2
(en)
|
2006-07-14 |
2013-06-04 |
4D-S Pty Ltd. |
Dual hexagonal shaped plasma source
|
US20080092806A1
(en)
*
|
2006-10-19 |
2008-04-24 |
Applied Materials, Inc. |
Removing residues from substrate processing components
|
US20080156631A1
(en)
*
|
2006-12-27 |
2008-07-03 |
Novellus Systems, Inc. |
Methods of Producing Plasma in a Container
|
US20080156264A1
(en)
*
|
2006-12-27 |
2008-07-03 |
Novellus Systems, Inc. |
Plasma Generator Apparatus
|
US7758718B1
(en)
*
|
2006-12-29 |
2010-07-20 |
Lam Research Corporation |
Reduced electric field arrangement for managing plasma confinement
|
KR100873923B1
(ko)
*
|
2007-05-18 |
2008-12-15 |
(주)제이하라 |
플라즈마 발생장치
|
US9591738B2
(en)
*
|
2008-04-03 |
2017-03-07 |
Novellus Systems, Inc. |
Plasma generator systems and methods of forming plasma
|
US20090286397A1
(en)
*
|
2008-05-15 |
2009-11-19 |
Lam Research Corporation |
Selective inductive double patterning
|
US8916022B1
(en)
|
2008-09-12 |
2014-12-23 |
Novellus Systems, Inc. |
Plasma generator systems and methods of forming plasma
|
US10388493B2
(en)
*
|
2011-09-16 |
2019-08-20 |
Lam Research Corporation |
Component of a substrate support assembly producing localized magnetic fields
|
RU2503079C1
(ru)
*
|
2012-04-24 |
2013-12-27 |
Евгений Владимирович Берлин |
Генератор плазмы (варианты)
|
US10193228B2
(en)
|
2013-10-24 |
2019-01-29 |
The United States Of America As Represented By The Administrator Of Nasa |
Antenna for near field sensing and far field transceiving
|
US9497846B2
(en)
|
2013-10-24 |
2016-11-15 |
The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration |
Plasma generator using spiral conductors
|
US10180341B2
(en)
|
2013-10-24 |
2019-01-15 |
The United States Of America As Represented By The Administrator Of Nasa |
Multi-layer wireless sensor construct for use at electrically-conductive material surfaces
|
US9401266B2
(en)
*
|
2014-07-25 |
2016-07-26 |
Bruker Daltonics, Inc. |
Filament for mass spectrometric electron impact ion source
|
JP6539986B2
(ja)
|
2014-11-05 |
2019-07-10 |
東京エレクトロン株式会社 |
プラズマ処理装置及びプラズマ処理方法
|
EP4064324A4
(de)
*
|
2020-02-19 |
2023-12-06 |
En2Core Technology, Inc |
Antennenstruktur und plasmaerzeugungsvorrichtung damit
|