DE69407882D1 - Chemisch verstärkter Resist - Google Patents

Chemisch verstärkter Resist

Info

Publication number
DE69407882D1
DE69407882D1 DE69407882T DE69407882T DE69407882D1 DE 69407882 D1 DE69407882 D1 DE 69407882D1 DE 69407882 T DE69407882 T DE 69407882T DE 69407882 T DE69407882 T DE 69407882T DE 69407882 D1 DE69407882 D1 DE 69407882D1
Authority
DE
Germany
Prior art keywords
chemically amplified
amplified resist
resist
chemically
amplified
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69407882T
Other languages
English (en)
Other versions
DE69407882T2 (de
Inventor
Eiichi Kobayashi
Makoto Murata
Toshiyuki Ota
Akira Tsuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
Japan Synthetic Rubber Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27327416&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69407882(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from JP5197813A external-priority patent/JPH0736189A/ja
Priority claimed from JP25374093A external-priority patent/JP3544217B2/ja
Priority claimed from JP5261875A external-priority patent/JPH0784361A/ja
Application filed by Japan Synthetic Rubber Co Ltd filed Critical Japan Synthetic Rubber Co Ltd
Application granted granted Critical
Publication of DE69407882D1 publication Critical patent/DE69407882D1/de
Publication of DE69407882T2 publication Critical patent/DE69407882T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
DE69407882T 1993-07-15 1994-07-14 Chemisch verstärkter Resist Expired - Lifetime DE69407882T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP5197813A JPH0736189A (ja) 1993-07-15 1993-07-15 レジスト塗布組成物
JP25374093A JP3544217B2 (ja) 1993-09-16 1993-09-16 ポジ型感放射線性樹脂組成物
JP5261875A JPH0784361A (ja) 1993-07-21 1993-09-24 感放射線性樹脂組成物

Publications (2)

Publication Number Publication Date
DE69407882D1 true DE69407882D1 (de) 1998-02-19
DE69407882T2 DE69407882T2 (de) 1998-07-16

Family

ID=27327416

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69407882T Expired - Lifetime DE69407882T2 (de) 1993-07-15 1994-07-14 Chemisch verstärkter Resist

Country Status (4)

Country Link
US (3) US5629135A (de)
EP (1) EP0634696B2 (de)
KR (1) KR960015081A (de)
DE (1) DE69407882T2 (de)

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US6110639A (en) * 1994-12-28 2000-08-29 Hoechst Japan Limited Radiation-sensitive composition and recording medium using the same
US5952150A (en) * 1995-06-08 1999-09-14 Jsr Corporation Radiation sensitive resin composition
US6391512B1 (en) * 1995-10-20 2002-05-21 Konica Corporation Image forming material and image forming method
US5879856A (en) * 1995-12-05 1999-03-09 Shipley Company, L.L.C. Chemically amplified positive photoresists
US6136498A (en) * 1996-06-28 2000-10-24 International Business Machines Corporation Polymer-bound sensitizer
DE69712988T2 (de) * 1996-07-18 2002-11-21 Jsr Corp Strahlungsempfindliche Harzzusammensetzung
US6140022A (en) * 1996-07-19 2000-10-31 Agfa-Gevaert, N.V. Radiation sensitive imaging element and a method for producing lithographic plates therewith
US6114082A (en) * 1996-09-16 2000-09-05 International Business Machines Corporation Frequency doubling hybrid photoresist having negative and positive tone components and method of preparing the same
US7147983B1 (en) * 1996-10-07 2006-12-12 Shipley Company, L.L.C. Dyed photoresists and methods and articles of manufacture comprising same
JP3376222B2 (ja) * 1996-10-25 2003-02-10 クラリアント インターナショナル リミテッド 放射線感応性組成物
JPH10186637A (ja) * 1996-12-26 1998-07-14 Clariant Internatl Ltd ロールコート用放射線感応性組成物
TW363986B (en) * 1997-05-12 1999-07-11 Ind Tech Res Inst A process for producing polyparahydroxy styrene derivatives
US6319648B1 (en) 1997-07-15 2001-11-20 E. I. Du Pont De Nemours And Company Dissolution inhibition resists for microlithography
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DE19743507A1 (de) * 1997-10-01 1999-04-15 Basf Drucksysteme Gmbh Mehrschichtelement zur Herstellung von Druck- oder Reliefformen
JP3052917B2 (ja) * 1997-10-24 2000-06-19 日本電気株式会社 化学増幅系レジスト
US6238840B1 (en) * 1997-11-12 2001-05-29 Hitachi Chemical Company, Ltd. Photosensitive resin composition
JP3998105B2 (ja) * 1998-02-04 2007-10-24 東京応化工業株式会社 化学増幅型ネガ型レジスト組成物及びそれを用いたパターン形成方法
JP3546687B2 (ja) * 1998-03-26 2004-07-28 住友化学工業株式会社 フォトレジスト組成物
US6383712B1 (en) 1998-06-05 2002-05-07 International Business Machines Corporation Polymer-bound sensitizer
US6143467A (en) * 1998-10-01 2000-11-07 Arch Specialty Chemicals, Inc. Photosensitive polybenzoxazole precursor compositions
TW476865B (en) * 1999-01-28 2002-02-21 Tokyo Ohka Kogyo Co Ltd Undercoating composition for photolithographic resist
US6544717B2 (en) 1999-01-28 2003-04-08 Tokyo Ohka Kogyo Co., Ltd. Undercoating composition for photolithographic resist
DE50015750D1 (de) 1999-04-28 2009-11-12 Qimonda Ag Bottomresist
TW502133B (en) * 1999-06-10 2002-09-11 Wako Pure Chem Ind Ltd Resist composition, agent and method for reducing substrate dependence thereof
JP3963624B2 (ja) * 1999-12-22 2007-08-22 富士フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
TW495809B (en) * 2000-02-28 2002-07-21 Semiconductor Energy Lab Thin film forming device, thin film forming method, and self-light emitting device
TW495812B (en) 2000-03-06 2002-07-21 Semiconductor Energy Lab Thin film forming device, method of forming a thin film, and self-light-emitting device
EP1193555A1 (de) * 2000-08-31 2002-04-03 Fuji Photo Film Co., Ltd. Negativ arbeitende Resistzusammensetzung
US20020058206A1 (en) * 2000-09-06 2002-05-16 Fuji Photo Film Co., Ltd. Positive resist composition
DE10120661A1 (de) 2001-04-27 2002-11-21 Infineon Technologies Ag Photolackzusammensetzung und Verfahren zur Strukturierung einer Photolackschicht
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US7067227B2 (en) * 2002-05-23 2006-06-27 Applied Materials, Inc. Sensitized chemically amplified photoresist for use in photomask fabrication and semiconductor processing
US6858464B2 (en) * 2002-06-19 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing light emitting device
TWI276366B (en) * 2002-07-09 2007-03-11 Semiconductor Energy Lab Production apparatus and method of producing a light-emitting device by using the same apparatus
JP4213925B2 (ja) * 2002-08-19 2009-01-28 富士フイルム株式会社 ネガ型レジスト組成物
AU2003277541A1 (en) * 2002-11-11 2004-06-03 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating light emitting device
JP4434762B2 (ja) 2003-01-31 2010-03-17 東京応化工業株式会社 レジスト組成物
KR20050031425A (ko) 2003-09-29 2005-04-06 호야 가부시키가이샤 마스크 블랭크 및 그 제조방법
TWI383271B (zh) * 2004-03-03 2013-01-21 Daicel Chem 微影後之洗淨步驟用洗淨劑及沖洗液
JP4558443B2 (ja) * 2004-03-15 2010-10-06 ダイセル化学工業株式会社 レジスト組成物
KR101097908B1 (ko) * 2004-12-09 2011-12-23 주식회사 이엔에프테크놀로지 세정액 조성물 및 이의 제조방법
JP5048754B2 (ja) 2006-04-13 2012-10-17 コーロン インダストリーズ インク ポジティブ型フォトレジスト用組成物およびこれから製造されたポジティブ型フォトレジストフィルム
JP4784753B2 (ja) * 2006-07-06 2011-10-05 信越化学工業株式会社 重合性エステル化合物、重合体、レジスト材料及びパターン形成方法
JP5177432B2 (ja) * 2008-02-21 2013-04-03 信越化学工業株式会社 パターン形成方法
JP5177434B2 (ja) * 2009-04-08 2013-04-03 信越化学工業株式会社 パターン形成方法
JP5124535B2 (ja) 2009-07-03 2013-01-23 富士フイルム株式会社 感活性光線性又は感放射性樹脂組成物及びそれを用いたパターン形成方法
JP2011213058A (ja) * 2010-04-01 2011-10-27 Canon Inc 感光性樹脂組成物および液体吐出ヘッドの製造方法
JP2021135507A (ja) * 2020-02-21 2021-09-13 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法並びにめっき造形物の製造方法

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Also Published As

Publication number Publication date
US5629135A (en) 1997-05-13
US5916729A (en) 1999-06-29
EP0634696A1 (de) 1995-01-18
EP0634696B1 (de) 1998-01-14
US6114086A (en) 2000-09-05
DE69407882T2 (de) 1998-07-16
KR960015081A (ko) 1996-05-22
EP0634696B2 (de) 2001-01-31

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8366 Restricted maintained after opposition proceedings
8332 No legal effect for de
8327 Change in the person/name/address of the patent owner

Owner name: JSR CORP., TOKIO/TOKYO, JP