DE69407497D1 - Mit einem Schutzsystem ausgerüstete integrierte Halbleiterschaltungsanordnung zum direkten Entladen von an Anschlüssen auftretenden Überspannungen auf eine Entladungsleitung - Google Patents

Mit einem Schutzsystem ausgerüstete integrierte Halbleiterschaltungsanordnung zum direkten Entladen von an Anschlüssen auftretenden Überspannungen auf eine Entladungsleitung

Info

Publication number
DE69407497D1
DE69407497D1 DE69407497T DE69407497T DE69407497D1 DE 69407497 D1 DE69407497 D1 DE 69407497D1 DE 69407497 T DE69407497 T DE 69407497T DE 69407497 T DE69407497 T DE 69407497T DE 69407497 D1 DE69407497 D1 DE 69407497D1
Authority
DE
Germany
Prior art keywords
discharge
circuit arrangement
protection system
semiconductor circuit
integrated semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69407497T
Other languages
English (en)
Other versions
DE69407497T2 (de
Inventor
Kaoru Narita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69407497D1 publication Critical patent/DE69407497D1/de
Publication of DE69407497T2 publication Critical patent/DE69407497T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69407497T 1993-06-30 1994-06-28 Mit einem Schutzsystem ausgerüstete integrierte Halbleiterschaltungsanordnung zum direkten Entladen von an Anschlüssen auftretenden Überspannungen auf eine Entladungsleitung Expired - Fee Related DE69407497T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5188802A JP2972494B2 (ja) 1993-06-30 1993-06-30 半導体装置

Publications (2)

Publication Number Publication Date
DE69407497D1 true DE69407497D1 (de) 1998-02-05
DE69407497T2 DE69407497T2 (de) 1998-07-23

Family

ID=16230064

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69407497T Expired - Fee Related DE69407497T2 (de) 1993-06-30 1994-06-28 Mit einem Schutzsystem ausgerüstete integrierte Halbleiterschaltungsanordnung zum direkten Entladen von an Anschlüssen auftretenden Überspannungen auf eine Entladungsleitung

Country Status (5)

Country Link
US (1) US5875086A (de)
EP (1) EP0632560B1 (de)
JP (1) JP2972494B2 (de)
KR (1) KR0154181B1 (de)
DE (1) DE69407497T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2636773B2 (ja) * 1995-01-25 1997-07-30 日本電気株式会社 半導体集積回路装置
EP0736904B1 (de) * 1995-04-06 2002-12-04 Infineon Technologies AG Integrierte Halbleiterschaltung mit einem Schutzmittel
JP2830783B2 (ja) * 1995-07-18 1998-12-02 日本電気株式会社 半導体装置
JP2850801B2 (ja) * 1995-07-28 1999-01-27 日本電気株式会社 半導体素子
JP3019760B2 (ja) * 1995-11-15 2000-03-13 日本電気株式会社 半導体集積回路装置
JP2826498B2 (ja) * 1996-01-17 1998-11-18 日本電気アイシーマイコンシステム株式会社 半導体装置
JP3144308B2 (ja) * 1996-08-01 2001-03-12 日本電気株式会社 半導体装置
JP2943738B2 (ja) * 1996-11-29 1999-08-30 日本電気株式会社 半導体装置における静電保護回路
JP2940506B2 (ja) * 1997-01-31 1999-08-25 日本電気株式会社 半導体装置
JP3111938B2 (ja) * 1997-09-16 2000-11-27 日本電気株式会社 半導体装置
JP3583662B2 (ja) 1999-08-12 2004-11-04 株式会社 沖マイクロデザイン 半導体装置および半導体装置の製造方法
GB2357633A (en) * 1999-12-21 2001-06-27 Nokia Mobile Phones Ltd Electrostatic discharge protection for integrated circuits
FR2803100B1 (fr) * 1999-12-28 2002-12-06 St Microelectronics Sa Dispositif de protection de lignes d'interconnexions dans un circuit integre
JP2002083931A (ja) * 2000-09-08 2002-03-22 Nec Corp 半導体集積回路装置
ATE541569T1 (de) * 2001-07-24 2012-02-15 Cargill Inc Verfahren zur isolation von phenolischen verbindungen
US6756834B1 (en) 2003-04-29 2004-06-29 Pericom Semiconductor Corp. Direct power-to-ground ESD protection with an electrostatic common-discharge line
GB2430821B (en) * 2004-02-07 2008-06-04 Samsung Electronics Co Ltd Buffer circuit having electrostatic discharge protection
JP4946000B2 (ja) * 2005-10-24 2012-06-06 セイコーエプソン株式会社 集積回路装置及び電子機器
JP5701835B2 (ja) * 2012-10-05 2015-04-15 クゥアルコム・インコーポレイテッドＱｕａｌｃｏｍｍ Ｉｎｃｏｒｐｏｒａｔｅｄ 相互接続構造体を有するチップ
JP6790705B2 (ja) * 2016-10-13 2020-11-25 セイコーエプソン株式会社 回路装置、発振器、電子機器及び移動体

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5343352A (en) * 1989-01-20 1994-08-30 Nec Corporation Integrated circuit having two circuit blocks energized through different power supply systems
US5189588A (en) * 1989-03-15 1993-02-23 Matsushita Electric Industrial Co., Ltd. Surge protection apparatus
JPH065705B2 (ja) 1989-08-11 1994-01-19 株式会社東芝 半導体集積回路装置
US5212618A (en) * 1990-05-03 1993-05-18 Linear Technology Corporation Electrostatic discharge clamp using vertical NPN transistor
JPH0430570A (ja) * 1990-05-28 1992-02-03 Sanyo Electric Co Ltd 半導体集積回路
JP3375659B2 (ja) * 1991-03-28 2003-02-10 テキサス インスツルメンツ インコーポレイテツド 静電放電保護回路の形成方法
US5287241A (en) * 1992-02-04 1994-02-15 Cirrus Logic, Inc. Shunt circuit for electrostatic discharge protection
US5233448A (en) * 1992-05-04 1993-08-03 Industrial Technology Research Institute Method of manufacturing a liquid crystal display panel including photoconductive electrostatic protection

Also Published As

Publication number Publication date
DE69407497T2 (de) 1998-07-23
KR950002020A (ko) 1995-01-04
JPH0786510A (ja) 1995-03-31
EP0632560A2 (de) 1995-01-04
EP0632560A3 (de) 1996-05-15
KR0154181B1 (ko) 1998-10-15
US5875086A (en) 1999-02-23
EP0632560B1 (de) 1997-12-29
JP2972494B2 (ja) 1999-11-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC CORP., TOKIO/TOKYO, JP

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee