DE69220330D1 - Halbleiterbauelement zum Schutz gegen Überspannungen - Google Patents

Halbleiterbauelement zum Schutz gegen Überspannungen

Info

Publication number
DE69220330D1
DE69220330D1 DE69220330T DE69220330T DE69220330D1 DE 69220330 D1 DE69220330 D1 DE 69220330D1 DE 69220330 T DE69220330 T DE 69220330T DE 69220330 T DE69220330 T DE 69220330T DE 69220330 D1 DE69220330 D1 DE 69220330D1
Authority
DE
Germany
Prior art keywords
protection against
semiconductor component
against overvoltages
overvoltages
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69220330T
Other languages
English (en)
Other versions
DE69220330T2 (de
Inventor
Eric Bernier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Application granted granted Critical
Publication of DE69220330D1 publication Critical patent/DE69220330D1/de
Publication of DE69220330T2 publication Critical patent/DE69220330T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
DE69220330T 1991-11-15 1992-11-09 Halbleiterbauelement zum Schutz gegen Überspannungen Expired - Fee Related DE69220330T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9114445A FR2683946B1 (fr) 1991-11-15 1991-11-15 Composant semiconducteur de protection contre des surtensions.

Publications (2)

Publication Number Publication Date
DE69220330D1 true DE69220330D1 (de) 1997-07-17
DE69220330T2 DE69220330T2 (de) 1997-10-30

Family

ID=9419241

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69220330T Expired - Fee Related DE69220330T2 (de) 1991-11-15 1992-11-09 Halbleiterbauelement zum Schutz gegen Überspannungen

Country Status (5)

Country Link
US (2) US5473170A (de)
EP (1) EP0542648B1 (de)
JP (1) JP3194800B2 (de)
DE (1) DE69220330T2 (de)
FR (1) FR2683946B1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2683946B1 (fr) * 1991-11-15 1997-05-09 Sgs Thomson Microelectronics Composant semiconducteur de protection contre des surtensions.
FR2718899B1 (fr) * 1994-04-14 1996-07-12 Sgs Thomson Microelectronics Indicateur de défaut d'un composant de protection.
GB9417393D0 (en) * 1994-08-30 1994-10-19 Texas Instruments Ltd A four-region (pnpn) semiconductor device
US5815359A (en) * 1995-09-08 1998-09-29 Texas Instruments Incorporated Semiconductor device providing overvoltage protection against electrical surges of positive and negative polarities, such as caused by lightning
FR2753006B1 (fr) * 1996-08-27 1998-11-27 Sgs Thomson Microelectronics Pont redresseur protege monolithique
US6956248B2 (en) 1999-03-01 2005-10-18 Teccor Electronics, Lp Semiconductor device for low voltage protection with low capacitance
US6531717B1 (en) 1999-03-01 2003-03-11 Teccor Electronics, L.P. Very low voltage actuated thyristor with centrally-located offset buried region
US6084253A (en) * 1999-03-01 2000-07-04 Teccor Electronics, Lp Low voltage four-layer device with offset buried region
WO2003034468A2 (en) * 2001-10-15 2003-04-24 Teraburst Networks, Inc. Crosstalk reduction in a crosspoint thyristor switching array using a shielded dielectric stack
US6881937B2 (en) * 2002-03-22 2005-04-19 Fort James Corporation Thermoformed food containers with enhanced rigidity
US7943959B2 (en) * 2007-08-28 2011-05-17 Littelfuse, Inc. Low capacitance semiconductor device
FR2960097A1 (fr) * 2010-05-11 2011-11-18 St Microelectronics Tours Sas Composant de protection bidirectionnel
DE102017130330B3 (de) * 2017-12-18 2019-02-14 Semikron Elektronik Gmbh & Co. Kg Thyristor mit einem Halbleiterkörper

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4060825A (en) * 1976-02-09 1977-11-29 Westinghouse Electric Corporation High speed high power two terminal solid state switch fired by dV/dt
CS192827B1 (en) * 1977-08-02 1979-09-17 Bohumil Pina Multilayer semiconductor element
FR2542148B1 (fr) * 1983-03-01 1986-12-05 Telemecanique Electrique Circuit de commande d'un dispositif a semi-conducteur sensible du type thyristor ou triac, avec impedance d'assistance a l'auto-allumage et son application a la realisation d'un montage commutateur associant un thyristor sensible a un thyristor moins sensible
FR2566963B1 (fr) * 1984-06-29 1987-03-06 Silicium Semiconducteur Ssc Triac de protection sans gachette, realise a partir d'un substrat a haute resistivite
JPS61202465A (ja) * 1985-03-06 1986-09-08 Toshiba Corp 過電圧保護機能付サイリスタ
GB2208257B (en) * 1987-07-16 1990-11-21 Texas Instruments Ltd Overvoltage protector
JPH0685437B2 (ja) * 1990-02-16 1994-10-26 新電元工業株式会社 両方向性２端子サイリスタ
FR2683946B1 (fr) * 1991-11-15 1997-05-09 Sgs Thomson Microelectronics Composant semiconducteur de protection contre des surtensions.

Also Published As

Publication number Publication date
EP0542648A1 (de) 1993-05-19
DE69220330T2 (de) 1997-10-30
EP0542648B1 (de) 1997-06-11
JP3194800B2 (ja) 2001-08-06
FR2683946B1 (fr) 1997-05-09
FR2683946A1 (fr) 1993-05-21
US5719413A (en) 1998-02-17
JPH05218396A (ja) 1993-08-27
US5473170A (en) 1995-12-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee