DE69516755T2 - Zusammensetzungen zum Schutz von Halbleiterelementen und Halbleitervorrichtungen - Google Patents
Zusammensetzungen zum Schutz von Halbleiterelementen und HalbleitervorrichtungenInfo
- Publication number
- DE69516755T2 DE69516755T2 DE69516755T DE69516755T DE69516755T2 DE 69516755 T2 DE69516755 T2 DE 69516755T2 DE 69516755 T DE69516755 T DE 69516755T DE 69516755 T DE69516755 T DE 69516755T DE 69516755 T2 DE69516755 T2 DE 69516755T2
- Authority
- DE
- Germany
- Prior art keywords
- compositions
- semiconductor
- protecting
- semiconductor devices
- elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/296—Organo-silicon compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/10—Encapsulated ingredients
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
- C08G77/16—Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxyl groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
- C08G77/18—Polysiloxanes containing silicon bound to oxygen-containing groups to alkoxy or aryloxy groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
- C08G77/26—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen nitrogen-containing groups
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6147072A JPH07335790A (ja) | 1994-06-06 | 1994-06-06 | 半導体素子保護用組成物および半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69516755D1 DE69516755D1 (de) | 2000-06-15 |
DE69516755T2 true DE69516755T2 (de) | 2000-10-12 |
Family
ID=15421842
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69516755T Expired - Fee Related DE69516755T2 (de) | 1994-06-06 | 1995-06-06 | Zusammensetzungen zum Schutz von Halbleiterelementen und Halbleitervorrichtungen |
Country Status (4)
Country | Link |
---|---|
US (1) | US5561329A (de) |
EP (1) | EP0686669B1 (de) |
JP (1) | JPH07335790A (de) |
DE (1) | DE69516755T2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10159288B4 (de) * | 2001-12-04 | 2015-10-01 | Nano-X Gmbh | Verfahren zur dauerhaften Beschichtung eines Substrates |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6255738B1 (en) * | 1996-09-30 | 2001-07-03 | Tessera, Inc. | Encapsulant for microelectronic devices |
JP3398004B2 (ja) * | 1997-03-24 | 2003-04-21 | ローム株式会社 | パッケージ型半導体装置の構造 |
US6407461B1 (en) | 1997-06-27 | 2002-06-18 | International Business Machines Corporation | Injection molded integrated circuit chip assembly |
US5959316A (en) * | 1998-09-01 | 1999-09-28 | Hewlett-Packard Company | Multiple encapsulation of phosphor-LED devices |
FR2791994B1 (fr) * | 1999-04-07 | 2002-07-05 | Rhodia Chimie Sa | Composition elastomere silicone non coulante, reticulable par polyaddition, et ses applications dans la fabrication de joints in situ ainsi qu'a titre de colle notamment pour sellerie |
US6118176A (en) * | 1999-04-26 | 2000-09-12 | Advanced Semiconductor Engineering, Inc. | Stacked chip assembly utilizing a lead frame |
DE10058593A1 (de) * | 2000-11-25 | 2002-06-06 | Bosch Gmbh Robert | Verpacktes elektronisches Bauelement und Verfahren zur Verpackung eines elektronischen Bauelements |
US6878973B2 (en) * | 2001-08-23 | 2005-04-12 | Lumileds Lighting U.S., Llc | Reduction of contamination of light emitting devices |
US7262074B2 (en) * | 2002-07-08 | 2007-08-28 | Micron Technology, Inc. | Methods of fabricating underfilled, encapsulated semiconductor die assemblies |
SG143931A1 (en) * | 2003-03-04 | 2008-07-29 | Micron Technology Inc | Microelectronic component assemblies employing lead frames having reduced-thickness inner lengths |
JP4677600B2 (ja) * | 2003-09-12 | 2011-04-27 | 独立行政法人産業技術総合研究所 | 基板及びその製造方法 |
US7427813B1 (en) * | 2003-11-20 | 2008-09-23 | Altera Corporation | Structure, material, and design for assembling a low-K Si die to achieve an industrial grade reliability wire bonding package |
US20050287350A1 (en) * | 2004-06-28 | 2005-12-29 | Crouthamel David L | Encapsulating compound having reduced dielectric constant |
US20060043612A1 (en) * | 2004-09-02 | 2006-03-02 | Stats Chippac Ltd. | Wire sweep resistant semiconductor package and manufacturing method thereof |
JP4684835B2 (ja) * | 2005-09-30 | 2011-05-18 | 信越化学工業株式会社 | シリコーンゴム硬化物の表面タック性を低減する方法、半導体封止用液状シリコーンゴム組成物、シリコーンゴム封止型半導体装置、及び該半導体装置の製造方法 |
JP2011246581A (ja) * | 2010-05-26 | 2011-12-08 | Shin-Etsu Chemical Co Ltd | 付加硬化型シリコーン組成物、該組成物からなる光学素子封止材並びに光学素子 |
TW201205745A (en) * | 2010-07-23 | 2012-02-01 | Global Unichip Corp | Semiconductor packaging structure and the forming method |
US9142426B2 (en) * | 2011-06-20 | 2015-09-22 | Cyntec Co., Ltd. | Stack frame for electrical connections and the method to fabricate thereof |
US10304788B1 (en) * | 2018-04-11 | 2019-05-28 | Semiconductor Components Industries, Llc | Semiconductor power module to protect against short circuit event |
WO2020230716A1 (ja) * | 2019-05-16 | 2020-11-19 | 住友化学株式会社 | 電子部品の製造方法および電子部品 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4318939A (en) * | 1980-08-21 | 1982-03-09 | Western Electric Co., Incorporated | Stabilized catalyzed organopolysiloxanes |
US4499149A (en) * | 1980-12-15 | 1985-02-12 | M&T Chemicals Inc. | Siloxane-containing polymers |
JPS6335654A (ja) * | 1986-07-30 | 1988-02-16 | Toshiba Silicone Co Ltd | 電子部品保護用シリコ−ンゲル組成物 |
JPH0195133A (ja) * | 1987-10-07 | 1989-04-13 | Toshiba Silicone Co Ltd | 末端に光重合性有機基を有するシロキサン−アミドブロックコポリマーおよびその製造方法 |
JP2576541B2 (ja) * | 1987-11-13 | 1997-01-29 | 旭硝子株式会社 | 半導体装置 |
US5216807A (en) * | 1988-05-31 | 1993-06-08 | Canon Kabushiki Kaisha | Method of producing electrical connection members |
US4888226A (en) * | 1988-08-08 | 1989-12-19 | American Telephone And Telegraph Company | Silicone gel electronic device encapsulant |
US5096990A (en) * | 1988-10-19 | 1992-03-17 | Tomoegawa Paper Co., Ltd. | Resin composition for inner coat of semiconductor chip |
DE3903547A1 (de) * | 1989-02-07 | 1990-08-09 | Bayer Ag | Mischungen aus thermoplastischen polydiorganosiloxan-polycarbonat-blockcopolymeren mit polytetrafluorethylenen |
US5051275A (en) * | 1989-11-09 | 1991-09-24 | At&T Bell Laboratories | Silicone resin electronic device encapsulant |
JPH0619029B2 (ja) * | 1989-11-22 | 1994-03-16 | 信越化学工業株式会社 | 半導体装置保護コート用組成物及び半導体装置 |
JP2994699B2 (ja) * | 1990-07-19 | 1999-12-27 | 東レ・ダウコーニング・シリコーン株式会社 | 皮膜形成性オルガノポリシロキサン組成物 |
US5258650A (en) * | 1991-08-26 | 1993-11-02 | Motorola, Inc. | Semiconductor device having encapsulation comprising of a thixotropic fluorosiloxane material |
US5442237A (en) * | 1991-10-21 | 1995-08-15 | Motorola Inc. | Semiconductor device having a low permittivity dielectric |
JP3175979B2 (ja) * | 1992-09-14 | 2001-06-11 | 株式会社東芝 | 樹脂封止型半導体装置 |
-
1994
- 1994-06-06 JP JP6147072A patent/JPH07335790A/ja active Pending
-
1995
- 1995-05-30 US US08/452,760 patent/US5561329A/en not_active Expired - Fee Related
- 1995-06-06 DE DE69516755T patent/DE69516755T2/de not_active Expired - Fee Related
- 1995-06-06 EP EP95108670A patent/EP0686669B1/de not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10159288B4 (de) * | 2001-12-04 | 2015-10-01 | Nano-X Gmbh | Verfahren zur dauerhaften Beschichtung eines Substrates |
Also Published As
Publication number | Publication date |
---|---|
EP0686669B1 (de) | 2000-05-10 |
EP0686669A3 (de) | 1996-08-07 |
JPH07335790A (ja) | 1995-12-22 |
EP0686669A2 (de) | 1995-12-13 |
DE69516755D1 (de) | 2000-06-15 |
US5561329A (en) | 1996-10-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69516755T2 (de) | Zusammensetzungen zum Schutz von Halbleiterelementen und Halbleitervorrichtungen | |
DE59814462D1 (de) | Isothiazolcarbonsäureamide und deren Verwendung zum Schutz von Pflanzen | |
DE69632173D1 (de) | Härtbare Organosiloxanzusammensetzungen und Halbleiterbauelemente | |
DE19781608T1 (de) | Verfahren und Vorrichtungen zum Ausgeben von Zusammensetzungsmassen | |
DE69610035D1 (de) | Siliziumthyristor für esd-schutz | |
DE69521107D1 (de) | Ausrichtverfahren und Halbleiterbelichtungsverfahren | |
DE69419418T2 (de) | Spannungsverschiebung und überspannungsschutz | |
DE69829863D1 (de) | Siegelzusammentsetzung und diese enthaltende artikel | |
DE69637488D1 (de) | Halbleiter und Halbleitermodul | |
DE69518188T2 (de) | Lichtdichte und physisch geschützte Verpackung | |
DE69534483D1 (de) | Leiterrahmen und Halbleiterbauelement | |
DE69302244T2 (de) | Halbleiter-Schutzkomponente | |
DE69517310D1 (de) | Abnehmbares absturzsicherungsgerät | |
DE69318268D1 (de) | Durch Hydrosilylierung härtbare Zusammensetzungen und Hydrosilylierungsverfahren | |
DE69220330T2 (de) | Halbleiterbauelement zum Schutz gegen Überspannungen | |
DE69412518D1 (de) | Aminderivate und diese enthaltende waschmittelzusammensetzungen | |
DE9420092U1 (de) | Modul zum Schutz von Software | |
DE69510717D1 (de) | Überstromschutzvorrichtung | |
DE69739855D1 (de) | Benzothiophene und denen enthaltende zusammensetzungen | |
ATA156897A (de) | Mittel zum schutz von pflanzen gegen schädlinge | |
DE69628370D1 (de) | Schneidvorrichtung zum Gestalten und Schneiden von Bandenden | |
DE69226652D1 (de) | Blendschutz und reflexionsfreie zusammensetzung | |
DE9411844U1 (de) | Schutzvorrichtung zum Schutz von Kulturpflanzen | |
DE69636860D1 (de) | PTC-Vorrichtung zum Schutz von elektrischen Vorrichtungen | |
DE9309403U1 (de) | Einrichtung zum Anordnen und Betreiben von elektrischen Funktionselementen |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |